Microchip-Tech-APT150GN120JDQ4
| Part # | Microchip-Tech-APT150GN120JDQ4 |
Download  | Microchip-Tech-APT150GN120JDQ4 |
1200V
APT100GN120B2
APT100GN120B2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and
T
r
ench Gate technologies, these IGBT’s have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss.
Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient.
A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault.
Low gate charge
simplifies gate drive design and minimizes losses.
T-Max
®
®
G
C
E
•
1200V Field Stop
• Trench
Gate: Low V
CE(on)
• Easy
Paralleling
• Integrated
Gate Resistor: Low EMI, High Reliability
C
E
G
Applications
:
W
elding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings:
T =
25°C unless otherwise specified.
C
Parameter
Symbol
APT100GN120B2
UNIT
V
CES
Collector-Emitter Voltage
1200
Volts
V
GE
I
C1
Gate-Emitter Voltage
±±0
245
100
±00
8
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
8
I
C2
Amps
1
Pulsed Collector Current
I
CM
Switching Safe Operating Area @ T
J
= 150°C
T
o
tal Power Dissipation
±00A @ 1200V
960
SSOA
P
D
Watts
°C
T
J
,T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to 150
±00
T
L
Max. Lead
T
e
mp. for Soldering: 0.06±” from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
Units
V
(BR)CES
V
GE(TH)
Collector-Emitter Breakdown Voltage
(V
GE
= 0
V
,
I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
,
I
C
= 4mA, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15
V
,
I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15
V
,
I
C
= 100A, T
j
= 125°C)
1200
5.0
5.8
1.7
2.0
6.5
2.1
Volts
1.4
V
CE(ON)
2
Collector Cut-off Current
(V
CE
= 1200
V
,
V
GE
= 0
V
,
T
j
= 25°C)
100
I
CES
µA
2
Collector Cut-off Current
(V
CE
= 1200
V
,
V
GE
= 0
V
,
T
j
= 125°C)
TBD
600
I
GES
Gate-Emitter Leakage Current
(V
GE
= ±20V)
Integrated Gate Resistor
nA
R
G(int)
Ω
7.5
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT100GN120B2
DYNAMIC CHARACTERISTICS
Test Conditions
Capacitance
Characteristic
Symbol
C
ies
MIN
TYP
6500
±65
280
9.5
MAX
UNIT
Input Capacitance
C
oes
C
res
Output Capacitance
pF
V
GE
= 0
V
,
V
CE
= 25V
f = 1 MHz
Reverse
T
r
ansfer Capacitance
Gate-to-Emitter Plateau Voltage
V
GEP
Q
g
V
Gate Charge
±
V
GE
= 15V
540
50
T
o
tal Gate Charge
V
CE
= 600V
I
C
= 100A
Q
ge
Q
gc
Gate-Emitter Charge
nC
Gate-Collector (“Mille
r
“
) Charge
295
T
J
= 150°C, R
G
= 4.±
Ω
7
,
V
GE
=
±00
SSOA
Switching Safe Operating Area
A
15
V
, L
=
1
00µH,V
CE
= 1200V
t
d(on)
t
r
t
d(off)
t
f
Inductive Switching (25°C)
50
50
T
u
rn-on Delay Time
Current Rise Time
T
u
rn-off Delay Time
Current Fall Time
V
CC
= 800V
V
GE
= 15V
I
C
= 100A
ns
615
105
11
R
G
= 1.0
Ω
7
4
E
on1
E
on2
E
off
t
d(on)
t
r
T
u
rn-on Switching Energy
T
J
= +25°C
5
m
J
ns
T
u
rn-on Switching Energy (Diode)
15
6
T
u
rn-off Switching Energy
9.5
50
Inductive Switching (125°C)
T
u
rn-on Delay Time
Current Rise Time
T
u
rn-off Delay Time
V
CC
= 800V
50
t
d(off)
t
f
V
GE
= 15V
725
210
12
I
C
= 100A
R
G
= 1.0
Ω
7
T
J
= +125°C
Current Fall Time
4
4
E
on1
E
on2
E
off
T
u
rn-on Switching Energy
5
5
m
J
T
u
rn-on Switching Energy (Diode)
22
6
6
T
u
rn-off Switching Energy
14
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
UNIT
MIN
TYP
MAX
.1±
R
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
θ
JC
°C/W
gm
R
N/A
θ
JC
W
T
6.1
1
2
±
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, I
ces
includes both IGBT and FRED leakages
See MIL-STD-750 Method ±471.
E
on1
is the clamped inductive turn-on energy of the IGBT onl
y
,
w
ithout the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss.
T
e
sted in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
6
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
(See Figures 21, 2±.)
7
8
R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance.
(MIC4452)
Continuous Current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT100GN120B2
±00
250
200
150
100
±00
V
= 15V
15V
GE
1±V
T
J
= -55°C
T
J
= 25°C
250
200
150
100
12V
11V
T
J
= 125°C
T
J
= 175°C
10V
9V
8V
7V
50
0
50
0
0
1.0
2.0
±.0
4.0
5.0
0
V
5
10
, COLLECTOR-TO-EMITTER VO
L
TAGE (V)
CE
15
20
25
±0
V
, COLLECTOR-TO-EMITTER VO
L
TAGE (V)
CE
FIGURE 1,
Output Characteristics(T =
25°C)
FIGURE 2,
Output Characteristics
(T =
125°C)
J
J
16
14
12
±00
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 100A
= 25°C
C
T
J
= 150°C
J
250
200
150
100
V
= 240V
CE
T
J
= 125°C
V
= 600V
CE
10
8
T
J
= 25°C
V
= 960V
CE
T
J
= -55°C
6
4
50
0
2
0
0
2
4
6
8
10
12
14
0
100
200
±00
400
500
600
V
, G
A
T
E-TO-EMITTER VO
L
TAGE
(V)
G
A
T
E CHARGE
(nC)
GE
FIGURE 3, Transfer
Characteristics
FIGURE 4, Gate
Charge
±.5
±.0
2.5
2.0
1.5
1.0
±.5
±
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 200A
I
= 200A
C
C
2.5
2
I
= 100A
I
= 100A
C
C
I
= 50A
C
1.5
1
I
= 50A
C
0.5
0
V
GE
= 15
V
.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0.5
0
8
10
12
14
16
-50 -25
0
25 50 75
100 125 150
V
, GATE-TO-EMITTER VOLTAGE (V)
T ,
Junction Temperature (°C)
GE
J
FIGURE 5,
On State
Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.15
±50
1.10
1.05
1.00
0.95
0.90
0.85
0.80
±00
250
200
Lead
T
e
mperature
Limited
150
100
50
0
0.75
0.70
-50 -25
0
25 50
75 100 125
150
-50 -25
0
25 50 75
100 125 150
T ,
JUNCTION TEMPERATURE (°C)
T ,
CASE TEMPERATURE (°C)
J
C
FIGURE 7
,
T
hreshold Voltage
vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT100GN120B2
60
50
40
±0
20
1000
800
600
400
200
V
= 15V
GE
V
GE
=15
V
,
T
J
=125°C
V
GE
=15
V
,
T
J
=25°C
V
CE
= 800V
T
J
= 25°C
,
or 125°C
G
= 1.0
Ω
L = 100µH
10
0
V
CE
=
800V
R
G
=
1.0
Ω
L = 100µH
R
0
I
10
40
70
100 1±0 160 190 220
10
40 70
100 1±0 160 190 220
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
I
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
FIGURE 9
,
T
urn-On Delay Time vs Collector Current
FIGURE 10
,
T
urn-Off Delay Time vs Collector Current
250
250
R
G
=
1.0
Ω
, L
=
100
µ
H, V
CE
=
800V
200
150
100
50
200
T
J
=
125°C, V
GE
=
15V
150
100
50
T
J
=
25°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
1.0
Ω
, L
=
100
µ
H, V
CE
=
800V
40 70 100
1±0 160 190 220
0
I
0
10
40
70 100 1±0 160
190 220
, COLLECTOR
TO EMITTER CURRENT
(A)
10
CE
I
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
FIGURE 11,
Current Rise Time vs Collector Current
FIGURE 12,
Current Fall Time vs Collector Current
±0,000
25,000
20,000
15,000
10,000
5000
80,000
60,000
40,000
20,000
0
V
V
R
= 800V
= +15V
= 1.0
Ω
V
V
R
= 800V
= +15V
= 1.0
Ω
CE
GE
CE
GE
G
G
T
J
=
125°C
T
J
=
125°C
T
J
=
25°C
T
J
=
25°C
0
10
40
70
100 1±0 160 190 220
10
40
70
100 1±0 160 190 220
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13
,
T
urn-On Energy Loss vs Collector Current
FIGURE 14, Turn
Off Energy Loss vs Collector Current
80,000
100,000
80,000
60,000
40,000
20,000
0
V
V
T
= 800V
= +15V
= 125°C
V
V
R
= 800V
= +15V
= 1.0
Ω
CE
GE
CE
GE
E
200A
on2,
E
200A
J
G
on2,
60,000
40,000
E
200A
off,
E
200A
off,
E
100A
50A
E
100A
50A
20,000
0
on2,
E
on2,
E
100A
off,
E
E
50A
E
100A
on2,
on2,
off,
E
50A
off,
off,
0
5
10
15
20
0
25
50
75
100
125
R ,
GATE RESISTANCE
(OHMS)
T ,
JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses
vs. Gate Resistance
FIGURE 16, Switching Energy Losses
vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT100GN120B2
10,000
±50
±00
250
200
150
100
C
ies
5,000
1,000
500
C
oes
C
res
50
0
100
0
10
20
±0
40
50
0
200 400 600 800
1000 1200 1400
V ,
COLLECTOR TO EMITTER VO
L
TAGE
CE
V
, COLLECTOR-TO-EMITTER VO
L
TAGE (VOLTS)
CE
Figure 17, Capacitance
vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.14
D = 0.9
0.12
0.7
0.5
0.±
0.10
0.08
0.06
0.04
0.02
0
Note:
t
1
SINGLE PULSE
0.1
t
2
0.05
t
1
t
/
2
Duty Factor D =
Peak T
= P
x Z
+ T
C
J
DM
θ
JC
10
-5
10
-4
10
-±
10
-2
10
-1
1.0
REC
T
A
NGULAR PULSE DUR
A
T
ION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
50
40
±0
F
max
= min (f
m
a
x
,
f
max2
)
T
J
(°C)
T
C
(°C)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
20
0.027±
0.0558
0.0467
Dissipated Power
(Watts)
P
diss
–
P
cond
E
on2
+ E
off
f
max2
=
T
T
=
125
°
C
0.00088
0.02±±
0.649
J
10
0
= 75
°
C
C
D = 50 %
V
R
T
J
– T
C
R
θ
JC
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
=
800V
P
diss
=
CE
= 1.0
Ω
G
20 40 60
80 100
120 140 160 180
200
I ,
COLLECTOR CURRENT (A)
C
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE
MODEL
Figure 20, Operating
Frequency vs
Collector Current
APT100GN120B2
Gate Voltage
10%
APT100DQ120
T
= 125°C
J
t
d(on)
t
r
Collector Current
V
CE
I
C
V
CC
90%
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22
,
T
urn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
T
= 125°C
J
t
d(off)
90%
Collector Voltage
t
f
10%
0
Collector Current
Switching Energy
Figure 23
,
T
urn-off Switching Waveforms and Definitions
T
–
MAX
®
(B2) Package Outline
e1 SAC:
Tin, Silver, Copper
4.69 (.185)
5.±1 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.±8 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.11±)
±.12 (.12±)
4.50 (.177) Max.
1.65 (.065)
2.1± (.084)
0.40 (.016)
0.79 (.0±1)
19.81 (.780)
20.±2 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810
5,045,90± 5,089,4±4 5,182,2±4 5,019,522
5,262,±±6 6,50±,786
5,256,58± 4,748,10± 5,28±,202 5,2±1,474 5,4±4,095 5,528,058
and foreign patents.
US and Foreign patents pending.
All Rights Reserved.
