Microchip-Tech-APT18M80B
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APT18M80B
APT18M80S
800V, 19A, 0.53
Ω
Max
N-Channel MOSFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFE
T
.
A proprietary planar stripe design yields excellent reliability and manufacturability.
Low
switching loss is achieved with low input capacitance and ultra low C
rss
“Miller” capaci-
tance. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency.
Reliability in
fl
yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
D
3
PAK
APT18M80B
APT18M80S
D
S
Single die MOSFET
G
FEATURES
TYPICAL APPLICATIONS
• PFC
and other boost converter
• Fast
switching with low EMI/RFI
• Buck
converter
• Low
R
DS(on)
• Two
switch forward (asymmetrical bridge)
• Single
switch forward
• Flyback
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Avalanche
energy rated
• RoHS
compliant
• Inverters
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
19
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
12
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
70
±30
795
9
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
500
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
0.25
Junction to Case Thermal Resistance
°C/W
°C
R
θ
CS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
T
J
,T
STG
-55
150
300
Operating and Storage Junction
T
e
mperature Range
T
L
Soldering
T
e
mperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
Mounting
T
o
rque ( TO-247 Package), 6-32 or M3 screw
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT18M80B_S
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coef
fi
cient
800
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.87
0.40
4
V
= 10V
,
I =
9A
D
R
DS(on)
V
GS(th)
0.53
5
GS
V
3
V
= V
DS
,
I =
1mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 800V
= 0V
T =
25°C
J
100
500
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
T =
125°C
J
GS
V
= ±30V
nA
±100
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
17
Max
Unit
g
fs
V
= 50V
,
I =
9A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
3760
65
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
375
pF
4
C
o(cr)
175
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
V
= 0V
,
V =
0V to 533V
DS
GS
V
5
C
o(er)
90
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
120
20
60
21
31
95
27
= 0 to 10V
,
I =
9A,
GS
D
nC
ns
V
= 400V
DS
Resistive Switching
V =
533V
,
I =
9A
DD
t
r
t
d(off)
t
f
D
R
= 4.7
Ω
6
,
V
= 15V
GG
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
19
A
G
Pulsed Source Current
(Body Diode)
1
I
SM
70
V
SD
t
rr
I
= 9A
,
T =
25°C, V
GS
= 0V
3
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.0
V
SD
J
I
= 9A, V
= 100V
DD
860
16
ns
μ
C
SD
Q
rr
di
SD
/
dt = 100A/
μ
s, T
= 25°C
J
I
≤
9A, di/dt
≤
1000A/
μ
s, V
= 533V,
SD
DD
V/ns
dv/dt
Peak Recovery dv/dt
10
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 19.63mH, R
G
= 10
Ω
, I
AS
= 9A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
T
o
c
alculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= 1.19E-8/V
DS
^2 + 1.53E-8/V
DS
+ 5.89E-11.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT18M80B_S
25
20
15
10
50
40
30
20
V
= 10V
T
= 125°C
GS
J
V
GS
= 10, & 15V
T
J
= -55°C
V
GS
= 6, & 6.5V
5.5V
T
J
= 25°C
5V
T
J
= 125°C
5
0
10
0
4.5V
4V
T
J
= 150°C
0
V
5
10
15
20
25
30
0
0
0
5
10
15
20
25
30
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
3.0
2.5
2.0
1.5
1.0
70
60
50
40
30
20
10
0
NORMALIZED TO
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
= 10V
@
9A
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0.5
0
-55 -25
0
25 50 75
100 125 150
T , JUNCTION
TEMPERATURE (°C)
1
2
3
4
5
6
7
8
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
25
20
15
10
5
5,000
1,000
C
iss
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
C
oss
100
10
C
rss
0
0
2
4
6
8
10 12 14
16
100 200
300 400 500 600 700 800
, DRAIN-TO-SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
V
D
DS
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
70
16
14
12
10
8
I
= 9A
D
60
50
V
DS
=
160V
V
DS
=
400V
40
T
J
= 25°C
30
20
6
T
J
= 150°C
V
DS
=
640V
4
10
0
2
0
0
20 40 60
80 100 120
140 160
180
0
0.3
0.6
0.9
1.2
1.5
Q ,
TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT18M80B_S
100
10
100
10
I
I
DM
DM
13
μ
s
13
μ
s
100
μ
s
100
μ
s
R
1ms
10ms
ds(on)
1ms
10ms
T
=
150°C
C
=
25°C
1
1
J
100ms
DC line
T
R
ds(on)
100ms
DC line
Scaling for Different Case & Junction
T
e
mperatures:
T
=
125°C
J
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
1000
1
10
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
100
1000
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.30
0.25
0.20
0.15
0.10
D = 0.9
0.7
Note:
0.5
0.3
t
1
t
2
t
= Pulse Duration
t
1
SINGLE PULSE
1
t
/
2
+ T
Duty Factor D =
0.05
0
Peak T
= P
x Z
0.1
J
DM
θJC C
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3
TO-247 (B) Package Outline
D PAK
Package Outline
e3 100%
Sn Plated
e1 SAC:
Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
16.05(.632)
1.04 (.041)
1.49 (.059)
2.49 (.098)
1.15(.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.
1.01 (.040)
1.40 (.055)
Gate
Drai n
Source
}
Source
Drai n
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
