Microchip-Tech-APT20M38BVRG
| Part # | Microchip-Tech-APT20M38BVRG |
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APT20M38BVR
200V 67A 0.038
Ω
POWER MOS V
®
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
TO-247
D
S
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25
°
C unless otherwise specified.
C
APT20M38BVR
UNIT
V
DSS
I
D
Drain-Source Voltage
200
67
Volts
Continuous Drain Current @ T
C
= 25
°
C
Amps
Volts
1
I
DM
Pulsed Drain Current
268
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±
30
±
40
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Watts
370
P
D
2.96
-55 to 150
300
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°
C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
67
1
E
AR
E
AS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µ
A)
Volts
200
67
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
0.038
25
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
µ
A
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current
(V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
250
±
100
4
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac – France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy
Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT20M38BVR
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5100
1145
390
148
47
6120
1600
585
225
75
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
Q
gs
Q
gd
V
DD
= 0.5 V
DSS
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
ns
I
D
= I
D[Cont.]
@ 25
°
C
75
110
28
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
R
G
= 1.6
Ω
14
21
42
Turn-off Delay Time
Fall Time
48
75
10
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
67
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
V
SD
t
rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
268
1.3
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Volts
ns
Reverse Recovery Time
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
Reverse Recovery Charge
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
160
1.3
Q
rr
µ
C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.34
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°
C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25
°
C, L = 0.58mH, R
= 25
Ω
, Peak I
= 67A
j
G
L
Pulse Test: Pulse width < 380
µ
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
t
1
0.01
0.005
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
SINGLE PULSE
2
+ T
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT20M38BVR
150
120
90
150
120
90
V
=15V
V
=10V & 15V
10V
GS
GS
7V
7V
6.5V
6.5V
6V
5V
6V
60
60
5.5V
4.5V
5.5V
30
30
5V
4.5V
5
0
0
0
V
20
40
60
80
100
0
V
1
2
3
4
6
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
150
120
90
60
30
0
1.3
T
= -55
°
C
NORMALIZED TO
J
V
= 10V
@ 0.5 I
[Cont.]
D
GS
T
= +25
°
C
J
1.2
1.1
1.0
0.9
0.8
T
= +125
°
C
J
V
> I
(ON) x
R
(ON)MAX.
DS
D
DS
250
µ
SEC. PULSE TEST
V
=10V
GS
@ <0.5 % DUTY CYCLE
V
=20V
160
T
= +125
°
C
= +25
°
C
GS
J
T
J
T
= -55
°
C
J
0
V
2
4
6
8
10
0
40
80
120
200
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
70
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100
125 150
T ,
CASE TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (
°
C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5
I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (
°
C)
T ,
CASE TEMPERATURE (
°
C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT20M38BVR
300
15,000
10,000
10
µ
S
OPERATION HERE
LIMITED BY R
(ON)
100
µ
S
DS
C
iss
oss
rss
100
50
5,000
C
1mS
C
1,000
500
10
5
10mS
T
T
=+25
°
C
=+150
°
C
C
J
100mS
DC
SINGLE PULSE
1
100
1
V
5
10
50 100
200
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
20
16
12
8
I
= I
[Cont.]
D
D
V
=40V
DS
=100V
100
V
T
=+150
°
C
T =+25
°
C
J
DS
J
50
V
=160V
DS
10
5
4
0
1
0
50
g
100
150
200
250
300
0
V
0.4
0.8
1.2
1.6
2.0
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
