Microchip-Tech-APT25GP120BDQ1G
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1200V
APT25GP120BDQ1
APT25GP120BDQ1G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
POWER MOS 7
IGBT
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
G
C
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 800V, 11A
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
C
E
• Ultrafast Tail
Current shutoff
G
MAXIMUM RATINGS
All Ratings:
T =
25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT25GP120BDQ1(G)
V
CES
V
GE
I
C1
Collector-Emitter Voltage
1200
Volts
±30
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
69
I
C2
Continuous Collector Current @ T
C
= 110°C
33
90
Amps
1
Pulsed Collector Current
@ T
C
= 150°C
I
CM
Reverse Bias Safe Operating Area @ T
J
= 150°C
90A @ 960V
417
RBSOA
P
D
Total Power Dissipation
Watts
°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
300
T
L
Max. Lead Temp. for Soldering: 0.063″ from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
Units
V
(BR)CES
V
GE(TH)
Collector-Emitter Breakdown Voltage
(V
GE
= 0V,
I
C
= 350µA)
Gate Threshold Voltage
(V
CE
= V
GE
,
I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage
(V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
1200
3
4.5
3.3
3.0
6
Volts
3.9
V
CE(ON)
2
Collector Cut-off Current
(V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
350
I
CES
I
GES
µA
nA
2
Collector Cut-off Current
(V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current
(V
GE
= ±20V)
3000
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT25GP120BDQ1(G)
UNIT
Test Conditions
Capacitance
MIN
TYP
2090
200
40
MAX
C
ies
Input Capacitance
C
oes
pF
V
Output Capacitance
V
GE
= 0V,
V
CE
= 25V
f = 1 MHz
C
res
Reverse Transfer Capacitance
V
GEP
7.5
Gate-to-Emitter Plateau Voltage
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 25A
3
Q
g
110
15
Total Gate Charge
Q
ge
nC
Gate-Emitter Charge
Q
gc
50
Gate-Collector (“Mille
r
“
) Charge
T
J
= 150°C, R
G
= 5
Ω,
V
GE
=
Reverse Bias Safe Operating Area
RBSOA
t
d(on)
A
90
15V, L
= 100µH,V
CE
= 960V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
12
14
V
CC
= 600V
V
GE
= 15V
I
C
= 25A
t
r
ns
t
d(off)
70
t
f
39
R
G
= 5
Ω
4
E
on1
E
on2
Turn-on Switching Energy
500
1090
440
12
T
J
= +25°C
5
µ
J
ns
Turn-on Switching Energy (Diode)
6
E
off
Turn-off Switching Energy
t
d(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
t
r
V
CC
= 600V
V
GE
= 15V
I
C
= 25A
14
t
d(off)
t
f
110
90
Current Fall Time
R
G
= 5
Ω
4
4
E
on1
E
on2
E
off
Turn-on Switching Energy
500
1575
1185
T
J
= +125°C
5
5
µ
J
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.30
R
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
θ
JC
θ
JC
°C/W
gm
R
1.18
W
T
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, I
ces
includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
E
on1
is the clam
ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
(See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT25GP120BDQ1(G)
60
50
40
30
20
10
0
60
50
40
30
T
J
= 25°C
T
J
= 25°C
20
T
J
= 125°C
T
J
= 125°C
10
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1,
Output Characteristics(T =
25°C)
FIGURE 2,
Output Characteristics
(T =
125°C)
J
J
100
16
14
12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 25A
= 25°C
C
J
V
=240V
80
60
40
20
0
CE
V
=600V
CE
10
8
T
J
= -55°C
V
= 480V
CE
6
T
J
= 25°C
4
2
T
J
= 125°C
0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
V
, GATE-TO-EMITTER VOLTAGE
(V)
GATE CHARGE
(nC)
GE
FIGURE 3,
Transfer Characteristics
FIGURE 4, Gate
Charge
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 50A
C
I
= 50A
C
I
= 25A
C
I
= 25A
C
I
= 12.5A
I
= 12.5A
C
C
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0.5
0
0.5
0
6
8
10
12
14
16
-25
0
25
50
75
100
125
V
, GATE-TO-EMITTER VOLTAGE (V)
T ,
Junction Temperature (°C)
GE
J
FIGURE 5,
On State
Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.10
100
90
80
70
60
50
40
30
20
1.06
1.02
0.98
0.94
0.90
10
0
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75
100 125 150
T ,
JUNCTION TEMPERATURE (°C)
T ,
CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage
vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT25GP120BDQ1(G)
140
120
100
80
16
14
12
10
8
V
= 15V
GE
V
GE
=15V,T
J
=125°C
60
6
V
GE
=15V,T
J
=25°C
40
4
V
CE
= 600V
V
CE
=
600V
R
G
=
5
Ω
L = 100 µH
T
J
= 25°C
,
T
J
=125°C
R
G
= 5
Ω
L = 100µH
20
2
0
I
0
I
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
, COLLECTOR
TO EMITTER CURRENT
(A)
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
35
120
R
G
=
5
Ω
, L
=
100
µ
H, V
CE
=
600V
R
G
=
5
Ω
, L
=
100
µ
H, V
CE
=
600V
30
25
20
15
10
5
100
80
60
40
20
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
0
I
0
I
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
, COLLECTOR
TO EMITTER CURRENT
(A)
, COLLECTOR
TO EMITTER CURRENT
(A)
CE
CE
FIGURE 11,
Current Rise Time vs Collector Current
FIGURE 12,
Current Fall Time vs Collector Current
3500
3000
2500
2000
1500
1000
500
2500
2000
1500
1000
V
V
R
=
=
= 5
Ω
600V
+15V
V
V
R
=
=
= 5
Ω
600V
+15V
CE
GE
CE
GE
G
G
T
J
=
125°C, V
GE
=
15V
T
J
=
125°C,V
GE
=
15V
500
0
T
J
=
25°C, V
GE
=
15V
T
J
=
25°C,V
GE
=
15V
0
10 15 20 25 30 35 40 45 50 55
, COLLECTOR TO EMITTER CURRENT (A)
10 15 20 25 30 35 40 45 50 55
I ,
COLLECTOR TO EMITTER CURRENT (A)
CE
I
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn
Off Energy Loss vs Collector Current
4500
3500
V
V
T
=
=
600V
+15V
V
V
R
=
=
= 5
Ω
600V
+15V
E
50A
CE
GE
CE
GE
on2,
E
50A
on2,
4000
3500
3000
2500
2000
1500
1000
500
= 125°C
J
3000
2500
2000
1500
1000
G
E
50A
off,
E
25A
E
50A
off,
E
on2,
25A
on2,
E
25A
off,
E
25A
E
off,
E
12.5A
on2,
E
12.5A
25
on2,
500
0
12.5A
off,
E
12.5A
off,
0
0
10
20
30
40
50
0
50
75
100
125
R ,
GATE RESISTANCE
(OHMS)
T ,
JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses
vs. Gate Resistance
FIGURE 16, Switching Energy Losses
vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT25GP120BDQ1(G)
100
90
80
70
60
50
40
30
20
10
0
10,000
5,000
C
ies
1,000
500
C
oes
100
50
C
res
10
0
10
20
30
40
50
0
100 200 300 400 500
600 700
800 900 1000
V ,
COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance
vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
t
1
0.3
0.10
0.05
0
t
2
t
1
t
Duty Factor D =
Peak T
= P
x Z
/
SINGLE PULSE
10
-3
2
0.1
+ T
C
J
DM
θ
JC
0.05
10
-5
10
-4
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
182
100
RC MODEL
F
max
= min (f
max
, f
max2
)
50
Junction
0.05
temp (
°
C)
f
max1
=
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
0.128
0.00833
0.171
P
diss
– P
cond
E
on2
+ E
off
Power
(watts)
f
max2
T
T
=
125
°
C
75
°
C
J
=
C
D = 50 %
V
R
T
J
– T
C
R
θ
JC
0.173
=
800V
P
diss
=
CE
= 5
Ω
G
10
Case temperature(
°
C)
FIGURE 19b,
TRANSIENT THERMAL
IMPEDANCE MODEL
5
10 15 20 25 30 35
40 45 50
I ,
COLLECTOR CURRENT (A)
C
Figure 20, Operating
Frequency vs
Collector Current
APT25GP120BDQ1(G)
Gate Voltage
10%
APT15DQ120
T
J
= 125 °C
t
d(on)
V
CE
I
C
V
CC
t
r
90%
10%
Collector Current
Collector Voltage
5 %
5%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
V
TEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
T
J
= 125 °C
A
V
CE
t
d(off)
t
f
Collector Voltage
I
C
100uH
V
CLAMP
B
90%
0
10%
Collector Current
A
Switching Energy
D.U.T.
DRIVER*
Figure 24, E
Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
ON1
TYPICAL PERFORMANCE CURVES
APT25GP120BDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings:
T =
25°C unless otherwise specified.
C
Symbol
I
F
(AV)
Characteristic / Test Conditions
APT25GP120BDQ1(G)
UNIT
Maximum Average Forward Current
(T
C
= 127°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current
(T
J
= 45°C, 8.3ms)
15
29
I
F
(RMS)
Amps
I
FSM
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
Characteristic / Test Conditions
MIN
TYP
MAX
MAX
I
F
= 25A
3.24
4.03
2.91
Volts
Forward Voltage
I
F
= 50A
V
F
I
F
= 25A, T
J
= 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
UNIT
Test Conditions
Reverse Recovery Time
t
rr
t
rr
I
F
= 1A,
di
F
/dt = -100A/
µ
s, V
R
= 30V,
T
J
= 25
°
C
–
21
ns
Reverse Recovery Time
Reverse Recovery Charge
–
240
I
F
= 15A,
di
F
/dt = -200A/
µ
s
V
R
= 800V,
T
C
= 25
°
C
Q
rr
I
RRM
t
rr
nC
Amps
ns
–
–
–
–
–
–
–
–
260
3
Maximum Reverse Recovery Current
Reverse Recovery Time
–
–
290
960
6
I
F
= 15A,
di
F
/dt = -200A/
µ
s
V
R
= 800V,
T
C
= 125
°
C
Q
rr
Reverse Recovery Charge
nC
Amps
ns
I
RRM
t
rr
Maximum Reverse Recovery Current
Reverse Recovery Time
130
1340
19
I
F
= 15A,
di
F
/dt = -1000A/
µ
s
V
R
= 800V,
T
C
= 125
°
C
Q
rr
Reverse Recovery Charge
nC
I
RRM
Maximum Reverse Recovery Current
Amps
1.20
D = 0.9
0.7
1.00
0.80
0.60
0.40
0.20
0
0.5
Note:
t
1
0.3
0.1
t
2
t
SINGLE PULSE
1
t
/
2
Duty Factor D =
Peak T
= P
x Z
+ T
θ
JC C
0.05
J
DM
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp. (
°
C)
0.676
0.504
0.00147
0.0440
Power
(watts)
Case temperature. (
°
C)
FIGURE 25b, TRANSIENT
THERMAL IMPEDANCE MODEL
APT25GP120BDQ1(G)
60
50
40
30
20
10
0
400
350
300
250
200
150
100
T
V
= 125
°
C
= 800V
J
T
= 175
°
C
= 125
°
C
R
J
30A
T
J
15A
T
= 25
°
C
J
7.5A
T
= -55
°
C
J
50
0
0
1
2
3
4
5
0
200
400
600
800 1000
1200
-di /dt,
CURRENT RATE OF CHANGE(A/
µ
s)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
V ,
ANODE-TO-CATHODE VOLTAGE (V)
F
F
Figure 26. Forward Current vs. Forward Voltage
2500
2000
1500
1000
25
T
V
= 125
°
C
= 800V
T
V
= 125
°
C
= 800V
J
J
30A
R
R
30A
20
15
10
5
15A
15A
7.5A
7.5A
500
0
0
0
200
400
600
800 1000
1200
-di /dt,
CURRENT RATE OF CHANGE (A/
µ
s)
0
200
400
600
800 1000
1200
-di /dt,
CURRENT RATE OF CHANGE (A/
µ
s)
F
F
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Reverse Recovery Current vs. Current Rate of ChangeTum tes-
1.2
35
Duty cycle = 0.5
Q
rr
T
= 175
°
C
t
J
rr
30
25
20
15
10
1.0
I
RRM
t
rr
0.8
0.6
Q
rr
0.4
0.2
0.0
5
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (
°
C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 30. Dynamic Parameters vs. Junction Temperature
80
70
60
50
40
30
20
10
0
1
10
100 200
V ,
REVERSE VOLTAGE (V)
R
Figure 32.
Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES
APT25GP120BDQ1(G)
V
r
di
F
/dt Adjust
+18V
0V
APT10078BLL
D.U.T.
t
Q
/
30
µ
H
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circ
u
t
i
1
2
I
F
– Forward Conduction Current
1
4
5
di
F
/dt – Rate of Diode Current Change Through Zero Crossing.
I
RRM
– Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
– Reverse
R
ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through I
RRM
and 0.25
I
RRM
passes through zero.
5
Q
– Area Under the Curve Defined by I
RRM
and t
.
rr
rr
Figure 34, Diode Reverse Recovery Waveform and Definitions
TO
–
247 Package Outline
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
(Cathode)
Emitter
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810
5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
and foreign patents.
US and Foreign patents pending.
All Rights Reserved.
