Microchip-Tech-APT29F80J
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APT29F80J
800V, 29A, 0.21
Ω
Max, t
≤
370ns
rr
N-Channel FREDFET
S
S
POWER MOS 8
®
is a high speed, high voltage N-channel switch-mode power
MOSFE
T
.
T
his
‘FREDFET’ version has a drain-source (body) diode that has
been optimized for high reliability in ZVS phase shifted bridge and other circuits
7
2
D
-2
G
T
O
S
through reduced t
, soft recovery, and high recovery dv/dt capability.
Low gate
rr
“UL Recognized”
file # E145592
charge, high gain, and a greatly reduced ratio of C
/C
result in excellent
rss iss
ISOTOP
®
APT29F80J
niose immunity and low switching loss.
The intrinsic gate resistance and ca-
pacitance of the poly-silicon gate structure help control di/dt during switching,
resulting in low EMI and reliable paralleling, even when switching at very high
frequency.
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS
phase shifted and other full full bridge
• Fast
switching with low EMI
• Half
bridge
• Low
t for
high reliability
rr
• PFC
and other boost converter
• Buck
converter
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
31
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
19
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
173
±30
1979
24
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
543
Unit
W
P
D
Total Power Dissipation @ T
C
= 25°C
R
θ
JC
Junction to Case Thermal Resistance
0.23
°C/W
R
θ
CS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
(50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
0.15
T
J
,T
STG
V
Isolation
°C
V
-55
150
2500
oz
g
1.03
29.2
W
T
Package Weight
in·lbf
N·m
10
Torque
Terminals and Mounting Screws.
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT29F80J
Parameter
Test Conditions
Min
800
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coef
fi
cient
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
1.41
0.19
4
V
= 10V
,
I =
24A
D
R
DS(on)
V
GS(th)
0.21
5
GS
V
2.5
V
= V
DS
,
I =
2.5mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 800V
= 0V
T
T
= 25°C
250
1000
±100
DS
J
J
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
= 125°C
GS
V
= ±30V
nA
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
g
fs
Parameter
Test Conditions
Min
Typ
43
Max
Unit
S
V
= 50V
,
I =
24A
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
9326
159
927
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
438
217
V
= 0V
,
V =
0V to 533V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
303
51
V
= 0 to 10V
,
I =
24A,
GS
D
nC
ns
V
= 400V
DS
155
53
Resistive Switching
V =
533V
,
I =
24A
DD
t
r
t
d(off)
t
f
76
D
R
= 2.2
Ω
6
,
V
= 15V
GG
231
67
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
31
Unit
A
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
173
I
= 24A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
370
710
V
SD
J
GS
T
T
T
T
T
T
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
J
J
J
J
J
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
3
I
= 24A
1.91
5.18
12
SD
Q
rr
μ
C
A
di
SD
/
dt = 100A/
μ
s
I
rrm
18
I
≤
24A, di/dt
≤
1000A/
μ
s, V
= 100V,
DD
SD
dv/dt
V/ns
25
T
= 125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 6.9mH, R
G
= 25
Ω
, I
AS
= 24A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To
calculate C
o(er)
for any
value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -8.27E-7/V
DS
^2 + 1.01E-7/V
DS
+ 1.43E-10.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
Typical Performance Curves
APT29F80J
60
50
40
30
20
10
0
100
V
= 10V
T
= 125°C
GE
J
90
80
70
60
50
40
30
20
10
T
J
= 55°C
10 & 15V
6 & 6.5V
T
J
= 25°C
5.5V
T
J
= 125°C
5V
T
J
= 150°C
4.5V
4V
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
FIGURE 1,
Output Characteristics
FIGURE 2,
Output Characteristics
160
3.5
NORMALIZED TO
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
= 10V
@ 24A
140
120
100
80
GS
3.0
2.5
2.0
1.5
1.0
0.5
@ <0.5 % DUTY CYCLE
T
J
= 55°C
T
J
= 25°C
60
40
T
J
= 125°C
20
0
0
0
2
4
6
8
10
0
25
50
75
100
125
150
V
GS
,
GATE-TO-SOURCE VOLTAGE (V)
FIGURE 4,
Transfer Characteristics
T , JUNCTION TEMPERATURE
(°C)
J
FIGURE 3,
R
vs Junction Temperature
DS(ON)
10,000
1,000
100
60
50
40
30
20
10
0
C
iss
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
C
oss
C
rss
10
0
200
400
600
80
0
5
10
15
20
25
30 35
I ,
DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
D
FIGURE 5,
Gain vs Drain Current
FIGURE 6,
CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE
12
10
8
200
I
= 31A
D
V
DS
=
120V
160
120
V
DS
=
300V
6
V
DS
=
480V
80
T
J
= 25°C
4
T
J
= 150°C
40
2
0
0
0
100
200
300
0
0.4
0.8
1.2
1.6
Q ,
TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
g
FIGURE 7,
Gate Charge vs Gate-to-Source Voltage
FIGURE 8,
Reverse Drain Current vs Source-to-Drain Voltage
APT29F80J
1000
100
10
1000
100
10
I
I
DM
DM
13
μ
s
100
μ
s
1ms
13
μ
s
100
μ
s
1ms
R
ds(on)
10ms
T
=
150°C
T
R
J
ds(on)
10ms
100ms
100ms
DC line
C
=
25°C
1
1
Scaling for Different Case & Junction
T
e
mperatures:
DC line
T
=
125°C
J
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
1000
1
10
100
1000
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.25
0.20
0.15
0.10
0.05
0
D = 0.9
0.7
0.5
0.3
0.1
Note:
t
1
t
2
t
= Pulse Duration
t
1
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
x Z
J
DM
θJC C
0.05
SINGLE PULSE
10
-5
10
10
-3
10
-2
-4
1
0
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M
4
(4 places
)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drai n
30.1 (1.185)
30.3 (1.193)
*
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal
.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
