Microchip-Tech-APT30M40JVR
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APT30M40JVR
300V 70A 0.040
Ω
POWER MOS V
®
S
S
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
D
G
SOT-227
“UL Recognized”
ISOTOP
®
D
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25
°
C unless otherwise specified.
C
APT30M40JVR
UNIT
V
DSS
I
D
Drain-Source Voltage
300
70
Volts
Continuous Drain Current @ T
C
= 25
°
C
Amps
Volts
1
I
DM
Pulsed Drain Current
280
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±
30
±
40
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Watts
450
P
D
3.6
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
-55 to 150
300
°
C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
70
1
E
AR
E
AS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µ
A)
Volts
300
70
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
0.040
25
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
µ
A
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current
(V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
250
±
100
4
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac – France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy
Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT30M40JVR
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
8500 10200
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
Output Capacitance
1500
390
285
56
2100
585
425
85
pF
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
Q
gs
Q
gd
V
DD
= 0.5 V
DSS
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
ns
I
D
= I
D[Cont.]
@ 25
°
C
120
16
180
32
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
R
G
= 0.6
Ω
20
40
Turn-off Delay Time
Fall Time
48
72
4
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
70
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
V
SD
t
rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
280
1.3
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Volts
ns
Reverse Recovery Time
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
Reverse Recovery Charge
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
530
Q
rr
11.5
µ
C
THERMA
L
/
P
ACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to Case
0.28
40
°
C/W
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
2500
Volts
lb•in
V
Isolation
Torque Maximum
Torque for Device Mounting Screws and Electrical Terminations.
13
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
4
Starting T = +25
°
C, L = 1.02mH, R
= 25
Ω
, Peak I
= 70A
j
G
L
Pulse Test: Pulse width < 380
µ
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLE PULSE
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT30M40JVR
150
120
90
60
30
0
150
120
90
60
30
0
V
=6.5V, 7V, 10V & 15V
GS
V
=15V
GS
V
=10V
GS
6V
V
=6.5V & 7V
GS
6V
5.5V
5V
5.5V
5V
4.5V
4V
4.5V
4V
5
0
V
30
60
90
120
150
0
V
1
2
3
4
6
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
150
120
90
60
30
0
1.3
T
J
= -55
°
C
J
NORMALIZED TO
V
= 10V
@
0.5 I
[Cont.]
D
GS
T
= +25
°
C
1.2
1.1
1.0
0.9
0.8
T
= +125
°
C
J
V
> I
(ON) x
R
(ON)MAX.
DS
D
DS
250
µ
SEC. PULSE TEST
V
=10V
@ <0.5 % DUTY CYCLE
GS
V
=20V
GS
T
= +125
°
C
= +25
°
C
J
T
T =
-55
°
C
J
J
0
V
2
4
6
8
0
40
80
120
160
200
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
1.20
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100
125 150
T ,
CASE TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (
°
C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5
I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (
°
C)
T ,
CASE TEMPERATURE (
°
C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT30M40JVR
400
30,000
10
µ
S
OPERATION HERE
LIMITED BY R
(ON)
DS
100
µ
S
100
50
C
iss
10,000
5,000
1mS
C
oss
10
5
10mS
C
rss
1,000
500
100mS
DC
1
T
T
=+25
°
C
=+150
°
C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
300
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
400
I
= I
[Cont.]
D
D
V
=60V
DS
=150V
T
=+150
°
C
T
=+25
°
C
J
J
100
50
V
DS
V
=240V
DS
10
5
4
0
1
0
100
g
200
300
400
500
0
V
0.4
0.8
1.2
1.6
2.0
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP
®
is a Registered Trademark of SGS Thomson.
“UL Recognized” File No. E145592
APT’s devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
