Microchip-Tech-APT30M70BVRG
| Part # | Microchip-Tech-APT30M70BVRG |
Download  | Microchip-Tech-APT30M70BVRG |
APT30M70BVFR
(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
300V 48A 0.070
Ω
POWER MOS V
®
FREDFET
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
TO-247
• Fast Recovery Body Diode
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package
D
S
FREDFET
G
• Faster Switching
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25
°
C unless otherwise specified.
C
APT30M70BVFR
(G)
UNIT
V
DSS
I
D
Drain-Source Voltage
300
48
Volts
Continuous Drain Current @ T
C
= 25
°
C
Amps
Volts
1
I
DM
Pulsed Drain Current
192
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±
30
±
40
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Watts
370
P
D
2.96
-55 to 150
300
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°
C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
48
1
E
AR
E
AS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
300
48
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µ
A)
Volts
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
0.070
250
1000
±
100
4
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
µ
A
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current
(V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac – France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy
Bât B4 Parc Cadéra Nord
APT30M70BVFR(G)
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
GS
= 0V
MIN
MIN
MIN
TYP
4890
882
277
152
35
MAX
5870
1235
415
225
52
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
V
Output Capacitance
pF
V
DS
= 25V
f = 1 MHz
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
V
DD
= 0.5 V
DSS
Q
gs
Q
gd
t
d
(on)
t
r
nC
ns
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
I
D
= I
D
[Cont.] @ 25
°
C
66
99
14
28
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.6
Ω
21
42
t
d
(off)
t
f
Turn-off Delay Time
Fall Time
57
85
10
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
TYP
MAX
48
UNIT
Continuous Source Current
(Body Diode)
I
S
Amps
1
I
SM
V
SD
Pulsed Source Current
(Body Diode)
192
1.3
5
2
Diode Forward Voltage
Peak Diode Recovery
dv
Reverse Recovery Time
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
225
400
ns
µ
C
t
rr
(I
S
= -I
D
[Cont.],
di
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
dt
= 100A/
µ
s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
dt
= 100A/
µ
s)
/
dt
= 100A/
µ
s)
1.0
4.2
10
Q
rr
/
I
RRM
Amps
/
20
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.34
40
UNIT
Junction to Case
R
θ
JC
R
θ
JA
°
C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25
°
C, L = 1.13mH, R
= 25
Ω
, Peak I
= 48A
j
G
L
di
Pulse Test: Pulse width < 380
µ
S, Duty Cycle < 2%
I
S
≤
-I [Cont.],
/
= 100A/
µ
s, V
≤
V
, T
≤
150
°
C, R
= 2.0
Ω
,
DSS j
G
D
DD
dt
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
t
1
0.01
0.005
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
SINGLE PULSE
2
+ T
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT30M70BVFR
(G)
100
80
60
40
20
0
100
80
60
40
20
0
V
=15V
GS
V
=7V, 10V & 15V
GS
6V
V
=10V
6V
GS
V
=7V
GS
5.5V
5V
5.5V
5V
4.5V
4V
4.5V
4V
0
V
30
60
90
120
150
0
V
2
4
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
60
40
20
0
1.3
NORMALIZED TO
T
= -55
°
C
J
V
= 10V
@ 0.5 I
[Cont.]
D
GS
T
= +25
°
C
J
T
= +125
°
C
1.2
1.1
1.0
0.9
J
V
> I
(ON) x
R
(ON)MAX.
DS
D
DS
25
0
µ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
80
GS
T
= +125
°
C
= +25
°
C
J
T
= -55
°
C
T
J
J
0
V
2
4
6
8
0
20
40
60
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
50
1.20
1.15
1.10
1.05
1.00
0.95
0.90
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100
125 150
T ,
CASE TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (
°
C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5
I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (
°
C)
T ,
CASE TEMPERATURE (
°
C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT30M70BVFR
(G)
200
100
50
15,000
10,000
10
µ
S
OPERATION HERE
LIMITED BY R
(ON)
DS
100
µ
S
C
iss
5,000
1mS
10
5
C
oss
10mS
1,000
500
C
rss
100mS
DC
1
T
T
=+25
°
C
=+150
°
C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
300
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
200
I
= I
[Cont.]
D
D
100
V
=60V
DS
T
=+150
°
C
T =+25
°
C
J
50
J
V
=150V
DS
10
5
V
=240V
DS
1
.5
4
0
.1
0
50
g
100
150
200
250
300
0
V
0.4
0.8
1.2
1.6
2.0
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
