Microchip-Tech-APT34F60B
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APT34F60B
APT34F60S
600V, 36A, 0.19
Ω
Max t
≤
250ns
rr
N-Channel FREDFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power
MOSFE
T
.
T
his
‘FREDFET’ version has a drain-source (body) diode that has
been optimized for high reliability in ZVS phase shifted bridge and other circuits
D
3
PAK
through reduced t
, soft recovery, and high recovery dv/dt capability.
Low gate
rr
charge, high gain, and a greatly reduced ratio of C
/C
result in excellent
rss iss
APT34F60B
APT34F60S
noise immunity and low switching loss.
The intrinsic gate resistance and ca-
pacitance of the poly-silicon gate structure help control di/dt during switching,
resulting in low EMI and reliable paralleling, even when switching at very high
frequency.
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS
phase shifted and other full bridge
• Fast
switching with low EMI
• Half
bridge
• Low
t for
high reliability
rr
• PFC
and other boost converter
• Buck
converter
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
36
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
23
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
124
±30
930
17
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
624
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
0.20
Junction to Case Thermal Resistance
°C/W
°C
R
θ
CS
0.15
Case to Sink Thermal Resistance, Flat, Greased Surface
T
J
,T
STG
-55
150
300
Operating and Storage Junction
T
e
mperature Range
T
L
Soldering
T
e
mperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
Mounting
T
o
rque ( TO-247 Package), 6-32 or M3 screw
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT34F60B_S
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coef
fi
cient
600
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.57
0.15
4
V
= 10V
,
I =
17A
D
R
DS(on)
V
GS(th)
0.19
5
GS
V
2.5
V
= V
DS
,
I =
1mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 600V
= 0V
T =
25°C
J
100
500
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
T =
125°C
J
GS
V
= ±30V
nA
±100
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
32
Max
Unit
g
fs
V
= 50V
,
I =
17A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
6640
70
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
610
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
325
170
V
= 0V
,
V =
0V to 400V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
165
36
V
= 0 to 10V
,
I =
17A,
GS
D
nC
ns
V
= 300V
DS
70
Resistive Switching
= 400V
,
I =
17A
37
t
r
t
d(off)
t
f
V
G
43
DD
D
R
= 4.7
Ω
6
,
V
= 15V
GG
115
34
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
36
A
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
124
I
= 17A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
250
525
V
SD
J
GS
T =
25°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T =
125°C
J
3
I
= 17A
T =
25°C
J
10
25
9
SD
Q
rr
μ
C
A
di
SD
/
dt = 100A/
μ
s
T =
125°C
J
T =
25°C
J
I
rrm
T =
125°C
J
12
I
≤
17A, di/dt
≤
1000A/
μ
s, V
= 400V,
SD
DD
dv/dt
V/ns
20
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 6.44mH, R
G
= 25
Ω
, I
AS
= 17A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To
calculate C
o(er)
for any
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -8.03E-8/V
DS
^2 + 2.80E-8/V
DS
+ 9.89E-11.
value of
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT34F60B_S
60
50
40
30
20
120
100
80
V
= 10V
T
= 125°C
GS
J
T
J
= -55°C
V
GS
= 7&8V
T
J
= 25°C
6V
60
40
5.5V
5V
10
0
20
0
T
J
= 150°C
T
J
= 125°C
0
V
5
10
15
20
25
30
0
0
0
5
10
15
20
25
30
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
120
100
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
NORMALIZED TO
= 10V
17A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
@
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0.5
0
-55 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
T , JUNCTION
TEMPERATURE (°C)
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
60
50
40
30
20
10
0
20,000
10,000
C
iss
T
J
= -55°C
T
J
= 25°C
1000
T
J
= 125°C
C
oss
100
10
C
rss
0
5
10 15 20 25 30 35 40
100
V ,
DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
600
I ,
DRAIN CURRENT (A)
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
120
I
= 17A
D
100
80
V
DS
=
120V
V
DS
=
300V
T
J
= 25°C
60
T
J
= 150°C
6
V
DS
=
480V
40
4
20
0
2
0
0
50
100
150
200
250
0
0.3
, SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6
0.9
1.2
1.5
Q ,
TOTAL GATE CHARGE (nC)
V
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT34F60B_S
200
100
200
100
I
I
DM
DM
10
1
10
1
13
μ
s
100
μ
s
1ms
10ms
13
μ
s
100
μ
s
R
ds(on)
R
ds(on)
T
J
=
150°C
C
=
25°C
1ms
10ms
T
Scaling for Different Case & Junc-
tion Temperatures:
100ms
DC line
T
J
=
125°C
100ms
DC line
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
800
1
10
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.25
0.20
0.15
0.10
0.05
0
D = 0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
= Pulse Duration
t
1
SINGLE PULSE
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
x Z
0.1
0.05
J
DM
θJC C
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3
D PAK
Package Outline
TO-247 (B) Package Outline
e3 100%
Sn Plated
e1 SAC:
Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
16.05(.632)
1.04 (.041)
1.49 (.059)
2.49 (.098)
1.15(.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.
1.01 (.040)
1.40 (.055)
Gate
Drai n
Source
}
Source
Drai n
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
