Microchip-Tech-APT37F50S
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APT37F50B
APT37F50S
500V, 37A, 0.15
Ω
Max, t
,
≤
250ns
rr
N-Channel FREDFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFE
T
.
D
3
PAK
This ‘FREDFET’ version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
, soft
rr
recovery, and high recovery dv/dt capability.
Low gate charge, high gain, and a greatly
reduced ratio of C
/C result
in excellent noise immunity and low switching loss.
The
rss iss
APT37F50B
APT37F50S
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS
phase shifted and other full bridge
• Fast
switching with low EMI
• Half
bridge
• Low
t for
high reliability
rr
• PFC
and other boost converter
• Buck
converter
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
37
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
24
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
115
±30
780
18
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
520
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
0.24
Junction to Case Thermal Resistance
°C/W
°C
R
θ
CS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
T
J
,T
STG
-55
150
300
Operating and Storage Junction
T
e
mperature Range
T
L
Soldering
T
e
mperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
Mounting Torque (TO-247 Package), 6-32 or M3 screw
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT37F50B_S
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250μA
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coeff cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coeff cient
500
GS
D
∆V
BR(DSS)
/∆T
J
Reference to 25°C, I
= 250μA
D
V/°C
Ω
0.60
0.13
4
V
= 10V
,
I =
18A
D
R
DS(on)
V
GS(th)
0.15
5
GS
V
2.5
V
= V
DS
,
I =
1mA
D
GS
∆V
GS(th)
/∆T
J
mV/°C
-10
V
=
5
00V
T =
25°C
J
250
1000
±100
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μA
nA
V
= 0V
T =
125°C
J
GS
V
= ±30V
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
27
Max
Unit
g
fs
V
= 50V
,
I =
18A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
5710
75
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
615
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
355
180
V
= 0V
,
V =
0V to 333V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
145
32
65
25
29
65
21
V
= 0 to 10V
,
I =
18A,
GS
D
nC
ns
V
= 250V
DS
Resistive Switching
V =
333V
,
I
=
ꢀ
18A
DD
t
r
t
d(off)
t
f
D
R
= 4.7Ω
6
,
V
= 15V
GG
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
37
A
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
115
I
= 18A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
250
450
V
SD
J
GS
T =
25°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T =
125°C
J
3
I
= 18A
T =
25°C
J
0.88
2.18
8.4
SD
Q
rr
μC
A
di
SD
/
dt = 100A/μs
= 100V
T =
125°C
J
V
T =
25°C
J
DD
I
rrm
T =
125°C
J
11.8
I
≤ 18A, di/dt ≤1000A/μs, V
= 333
V
,
DD
SD
dv/dt
V/ns
20
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 4.81mH, R
G
= 25Ω, I
AS
= 18A.
Pulse test: Pulse Width < 380μs, duty cycle
< 2%.
4
5
C
o(cr)
is def ned as a f xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is def ned as a f xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
T
o
c
alculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -1.33E-7/V
DS
^2 + 3.06E-8/V
DS
+ 8.83E-11.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT37F50B_S
70
60
50
40
30
20
140
120
100
80
V
= 10V
T
= 125°C
GS
J
V
GS
= 7 &,10V
T
J
= -55°C
6.5V
6V
T
J
= 25°C
60
5.5V
5V
40
T
J
= 150°C
10
0
20
0
T
J
= 125°C
0
5
10
15
20
25
0
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
2.5
2.0
1.5
1.0
120
100
80
60
40
20
0
NORMALIZED TO
= 10V
18A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
@
GS
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0.5
0
-55 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
T , JUNCTION
TEMPERATURE (°C)
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
C
iss
DS(ON)
10,000
1000
45
40
35
30
25
20
15
10
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
C
oss
100
10
C
rss
5
0
0
5
10
15
20
25
30
35
100
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
I ,
DRAIN CURRENT (A)
V
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
120
I
= 18A
D
100
80
60
40
20
0
V
DS
=
120V
V
DS
=
300V
T
J
= 25°C
6
V
DS
=
480V
T
J
= 150°C
4
2
0
0
50
100
150
200
250
0
0.3
, SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6
0.9
1.2
1.5
Q ,
TOTAL GATE CHARGE (nC)
V
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT37F50B_S
200
100
200
100
I
I
DM
DM
R
ds(on)
10
1
10
1
13μs
100μs
13μs
100μs
1ms
10ms
1ms
10ms
100ms
DC line
R
ds(on)
T
=
150°C
J
T
C
=
25°C
Scaling for Different Case & Junction
T
e
mperatures:
100ms
DC line
T
=
125°C
J
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
800
1
10
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.25
0.20
0.15
0.10
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
= Pulse Duration
t
1
0.05
0
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
SINGLE PULSE
0.1
x Z
J
DM
θJC C
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3
D PAK
Package Outline
TO-247 (B) Package Outline
e3 100%
Sn Plated
e1 SAC:
Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
16.05(.632)
1.04 (.041)
1.49 (.059)
2.49 (.098)
1.15(.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.
1.01 (.040)
1.40 (.055)
Gate
Drai n
Source
}
Source
Drai n
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
