Microchip-Tech-APT47F60J
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APT47F60J
600V, 49A, 0.09
Ω
Max, t
≤
310ns
rr
N-Channel FREDFET
S
S
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFE
T
.
A proprietary planar stripe design yields excellent reliability and manufacturability.
Low
switching loss is achieved with low input capacitance and ultra low C
rss
“Miller” capaci-
tance. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency.
Reliability in
fl
yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
7
2
D
-2
G
T
O
S
“UL Recognized”
file # E145592
ISOTOP
®
APT47F60J
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• Fast
switching with low EMI
• ZVS
phase shifted and other full bridge
• Low
t for
high reliability
rr
• Half
bridge
• Ultra
low C
rss
for improved noise immunity
• PFC
and other boost converter
• Buck
converter
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
Continuous Drain Current @ T
C
= 25°C
49
31
I
D
Continuous Drain Current @ T
C
= 100°C
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
245
±30
1845
33
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
540
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
Junction to Case Thermal Resistance
0.23
°C/W
R
θ
CS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction
T
e
mperature Range
RMS Voltage
(50-60hHz Sinusoidal Waveform from
T
e
rminals to Mounting Base for 1 Min.)
0.15
T
J
,T
STG
V
Isolation
°C
V
-55
150
2500
oz
g
1.03
29.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
T
e
rminals and Mounting Screws.
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT47F60J
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coef
fi
cient
600
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.57
0.075
4
V
= 10V
,
I =
33A
D
R
DS(on)
V
GS(th)
0.09
5
GS
V
2.5
V
= V
DS
,
I =
2.5mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 600V
= 0V
T =
25°C
J
250
1000
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
T =
125°C
J
GS
±100
V
= ±30V
nA
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
65
Max
Unit
g
fs
V
= 50V
,
I =
33A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
13190
135
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
1210
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
645
335
V
= 0V
,
V =
0V to 400V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
330
70
V
= 0 to 10V
,
I =
33A,
GS
D
nC
ns
V
= 300V
DS
140
75
Resistive Switching
V =
400V
,
I =
33A
DD
t
r
t
d(off)
t
f
85
D
R
= 2.2
Ω
6
,
V
= 15V
GG
225
70
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
49
A
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
245
I
= 33A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
310
570
V
SD
J
GS
T =
25°C
J
268
474
1.6
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T =
125°C
J
3
I
= 33A
T =
25°C
J
SD
Q
rr
μ
C
A
V
= 100V
T =
125°C
J
4.2
DD
di
SD
/
dt = 100A/
μ
s
T =
25°C
J
11.4
17
I
rrm
T =
125°C
J
I
≤
33A, di/dt
≤
1000A/
μ
s, V
= 400V,
SD
DD
dv/dt
V/ns
20
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 3.39mH, R
G
= 25
Ω
, I
AS
= 33A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
T
o
c
alculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -1.28E-7/V
DS
^2 + 5.36E-8/V
DS
+ 2.00E-10.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT47F60J
120
100
80
250
200
150
100
V
= 10V
T
= 125°C
GS
J
T
J
= -55°C
V
GS
= 7&8V
T
J
= 25°C
6V
60
40
5.5V
50
0
20
0
T
J
= 150°C
T
J
= 125°C
5V
4.5V
0
V
5
10
15
20
25
30
0
0
0
5
10
15
20
25
30
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
3.0
2.5
2.0
1.5
1.0
250
200
150
100
NORMALIZED TO
= 10V
33A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
@
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
50
0
0.5
0
-55 -25
0
25 50 75
100 125 150
T , JUNCTION
TEMPERATURE (°C)
1
2
3
4
5
6
7
8
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
120
100
80
20,000
10,000
C
iss
T
J
= -55°C
T
J
= 25°C
1000
T
J
= 125°C
60
C
oss
40
100
10
C
rss
20
0
0
10 20 30 40 50 60 70 80
100
V ,
DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
600
I ,
DRAIN CURRENT (A)
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
250
I
= 33A
D
200
150
100
V
DS
=
120V
V
DS
=
300V
T
J
= 25°C
6
V
DS
=
480V
T
J
= 150°C
4
50
0
2
0
0
100
200
300
400
500
0
0.3
, SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6
0.9
1.2
1.5
Q ,
TOTAL GATE CHARGE (nC)
V
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT47F60J
300
100
300
100
I
I
DM
DM
10
10
13
μ
s
13
μ
s
100
μ
s
100
μ
s
1ms
R
ds(on)
R
ds(on)
10ms
100ms
DC line
1ms
10ms
T
=
150°C
J
1
1
T
C
=
25°C
Scaling for Different Case & Junction
T
e
mperatures:
100ms
DC line
T
=
125°C
J
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
800
1
10
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.25
0.20
0.15
0.10
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
0.05
0
t
= Pulse Duration
t
1
1
t
/
2
+ T
0.1
Duty Factor D =
SINGLE PULSE
Peak T
= P
x Z
J
DM
θJC C
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M
4
(4 places
)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drai n
30.1 (1.185)
30.3 (1.193)
*
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
