Microchip-Tech-APT47N60SC3G

APT47N60BC3(G)  

APT47N60SC3(G)  

600V 47A

 

0.070

Ω

 

Super Junction MOSFET  

D

3

PAK  

• Ultra

 

Low R

DS(ON)  

• Low

 

Miller Capacitance  

• Ultra

 

Low Gate Charge, Q  

• Avalanche

 

Energy Rated  

g

D

dv  

• Extreme  

/

Rated  

dt  

• Popular

 

TO-247 or Surface Mount D

3

package.  

• RoHS

 

Compliant  

G

S

MAXIMUM RATINGS  

Symbol Parameter  

All Ratings:

 

T =

 

25°C unless otherwise speci

fi

ed.  

C

APT47N60BC3_SC3(G)  

UNIT  

V

DSS  

I

D  

Drain-Source Voltage  

Volts  

600  

47  

Continuous Drain Current @ T

C

= 25°C  

Amps  

Volts  

1

I

DM  

141  

Pulsed Drain Current  

V

GS  

V

GSM  

Gate-Source Voltage Continuous  

Gate-Source Voltage Transient  

±20  

±30  

Watts  

W/°C  

T

o

tal Power Dissipation @ T

C

= 25°C  

Linear Derating Factor  

417  

P

D  

3.33  

-55 to 150  

260  

T

J

,T

STG

Operating and Storage Junction

T

e

mperature Range  

°C  

T

L  

Lead

T

e

mperature: 0.063″ from Case for 10 Sec.  

dv  

V/ns  

/

Drain-Source Voltage slope (V

DS

= 480V, I

D

= 47A, T

J

= 125°C)  

50  

dt  

7

Amps  

I

AR  

E

AR  

E

AS  

Repetitive Avalanche Current  

20  

7

Repetitive Avalanche Energy  

1

mJ  

4

Single Pulse Avalanche Energy  

1800  

STATIC ELECTRICAL CHARACTERISTICS  

Symbol Characteristic

 

/ Test Conditions  

UNIT  

MIN  

TYP  

MAX  

BV

DSS  

R

DS(on)  

Drain-Source Breakdown Voltage

 

(V

GS

= 0V, I

D

= 250

μ

A)  

600  

Volts  

2

Drain-Source On-State Resistance  

(V

GS

= 10V, I

D

= 30A)  

Ohms  

0.06  

0.5  

0.07  

25  

Zero Gate Voltage Drain Current

 

(V

DS

= 600V, V

GS

= 0V)  

Zero Gate Voltage Drain Current

 

(V

DS

= 600V, V

GS

= 0V, T

J

= 150°C)  

Gate-Source Leakage Current

 

(V

GS

= ±20

V

, V

DS

= 0V)  

Gate Threshold Voltage

 

(V

DS

= V

GS

, I

D

= 2.7mA)  

I

DSS  

μ

A  

250  

±100  

3.9  

nA  

I

GSS  

V

GS(th)  

Volts  

2.10  

3

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  

“COOLMOS™ comprise a new family of transistors developed by In

fi

neon Technologies AG. “COOLMOS” is a trade-  

mark of In

fi

neon Technologies AG.”  

DYNAMIC CHARACTERISTICS  

Symbol Characteristic  

APT47N60BC3_SC3(G)  

MIN  

TYP  

MAX  

Test Conditions  

UNIT  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

7015  

2565  

210  

260  

29  

V

= 0V  

GS  

Output Capacitance  

V

= 25V  

pF  

DS  

f = 1 MHz  

Reverse Transfer Capacitance  

3

T

o

tal Gate Charge  

V

= 10V  

GS  

V

= 300V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-Source Charge  

Gate-Drain (“Mille

r

“

) Charge  

Turn-on Delay Time  

Rise Time  

DD  

nC  

ns  

I

= 47A @ 25°C  

D

110  

18  

RESISTIVE SWITCHING  

V

= 13V  

GS  

27  

V

= 380V  

DD  

t

d(off)  

I

= 47A @ 125°C  

110  

Turn-off Delay Time  

Fall Time  

D

R

= 1.8

Ω

 

G

t

f  

8

INDUCTIVE SWITCHING @ 25°C  

6

E

on  

E

off  

E

on  

E

off  

670  

980  

1100  

1200  

Turn-on Switching Energy  

V

= 400V,

 

V =

 

15V  

GS  

DD  

I

= 47A,

 

R =

 

5

Ω  

Turn-off Switching Energy  

D

G

μ

J  

INDUCTIVE SWITCHING @ 125°C  

6

Turn-on Switching Energy  

V

= 400V V

 

= 15V  

GS  

DD  

I

= 47A,

 

R =

 

5

Ω  

Turn-off Switching Energy  

D

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  

Symbol  

Characteristic / Test Conditions  

UNIT  

MIN  

TYP  

MAX  

47  

I

S  

Continuous Source Current

 

(Body Diode)  

Amps  

1

141  

1.2  

I

SM  

V

SD  

t

rr  

Pulsed Source Current  

Diode Forward Voltage  

(Body Diode)  

2

Volts  

ns  

(V

GS

= 0V, I

S

= –

47A

)  

580  

23  

Reverse Recovery Time

 

(I

S

= –

47A

, dl

S

/dt = 100A/

μ

s, V

R

= 350V)  

μ

C  

Q

rr  

Reverse Recovery Charge

 

(I

S

= –

47A

, dl

S

/dt = 100A/

μ

s, V

R

= 350V)  

dv  

5

Peak Diode Recovery

dv  

/

dt  

V/ns  

6

/

dt  

THERMAL CHARACTERISTICS  

Symbol Characteristic  

UNIT  

MIN  

TYP  

MAX  

0.30  

62  

R

θ

JC  

R

θ

JA  

Junction to Case  

°C/W  

Junction to Ambient  

1 Repetitive

 

Rating: Pulse width limited by maximum junction  

temperature  

4 Starting

 

T =

 

+25°C, L = 36.0mH, R

 

= 25

Ω

, Peak I

 

= 10A  

j

G

L

dv  

5

/

numbers re

fl

ect the limitations of the test circuit rather than the  

dt  

di  

2 Pulse

 

T

e

st: Pulse width < 380

μ

s, Duty Cycle < 2%  

3 See

 

MIL-STD-750 Method 3471  

device itself.  

I

≤

–

I

47A  

/

≤

700A/

μ

s  

V

T

≤

150

°

C  

J

S

D

DSS  

dt  

6 Eon

 

includes diode reverse recovery.

 

See

fi

gures 18, 20.  

7 Repetitve

 

avalanche causes additional power losses that can be  

calculated as

P

AV

=E

AR

*f  

Microsemi Reserves the right to change, without notice, the speci

fi

cations and information contained  

0.35  

0.30  

0.9  

0.25  

0.7  

0.20  

0.5  

0.15  

Note:  

t

1

0.3  

0.10  

t

2

SINGLE PULSE  

t

0.05  

0.1  

1

t

/

2

Duty Factor D =  

Peak T

 

= P

 

x Z  

+ T  

C

0.05  

J

DM  

θJC  

0

10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

1.0  

RECTANGULAR PULSE DURATION (SECONDS)  

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION  

Typical Performance Curves  

APT47N60BC3_SC3(G)  

180  

160  

140  

120  

100  

80  

V

GS

=15 & 10V  

6.5V  

6V  

5.5V  

5V  

60  

40  

4.5V  

4V  

20  

0

0

5

10  

15  

20  

25  

30  

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

DS  

FIGURE 2, LOW

 

VOLTAGE OUTPUT

 

CHARACTERISTICS  

1.40  

1.30  

1.20  

1.10  

1.00  

120  

V

DS

> I

D

(ON) x

 

R

DS

(ON)MAX.  

NORMALIZED TO  

= 10V

 

23.5A  

GS  

250

μ

SEC. PULSE TEST  

V

@

@ <0.5 % DUTY CYCLE  

100  

80  

T

J

= -55°C  

60  

V

GS

=10V  

T

J

= +25°C  

40  

T

J

= +125°C  

V

GS

=20V  

0.90  

0.80  

20  

0

0

1

2

3

4

5

6

7

0

10 20 30 40 50 60 70 80 90  

V

, GATE-TO-SOURCE VOLTAGE (VOLTS)  

I ,

 

DRAIN CURRENT (AMPERES)  

FIGURE 4, R

 

(ON) vs DRAIN CURRENT  

DS  

GS  

D

FIGURE 3,

 

TRANSFER CHARACTERISTICS  

1.15  

1.10  

1.05  

1.00  

50  

40  

30  

20  

10  

0

0.95  

0.90  

25  

50  

75  

100  

125  

150  

-50 -25  

0

25 50 75

 

100 125 150  

T ,

 

CASE TEMPERATURE (°C)  

FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  

T , JUNCTION TEMPERATURE (°C)  

FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE  

C

J

1.2  

3

I

= 47A  

= 10V  

D

V

GS  

1.1  

1.0  

0.9  

0.8  

2.5  

2.0  

1.5  

1.0  

0.7  

0.6  

0.5  

0

-50 -25  

0

25 50  

75 100

 

125 150  

-50 -25  

0

25 50 75

 

100 125 150  

T , JUNCTION TEMPERATURE (°C)  

FIGURE 7, ON-RESISTANCE vs. TEMPERATURE  

T ,

 

CASE TEMPERATURE (°C)  

FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE  

J

C

Typical Performance Curves  

APT47N60BC3_SC3(G)  

188  

30,000  

10,000  

OPERATION HERE  

LIMITED BY R  

(ON)  

DS  

100  

50  

C

iss  

C

oss  

1,000  

100

μ

S  

10  

5

100  

10  

C

rss  

1mS  

T

C

=+25°C  

T

J

=+150°C  

SINGLE PULSE  

10mS  

1

1

10  

100  

600  

0

V

10  

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

DS  

20  

30  

40  

50  

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

FIGURE 9, MAXIMUM SAFE OPERATING AREA  

DS  

FIGURE 10,

 

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE  

200  

16  

I

= 47A  

D

100  

12  

T

J

=+150°C  

T

J

=+25°C  

V

DS

= 120V  

V

DS

= 300V  

8

10  

V

DS

= 480V  

4

0

1

0

50 100

 

150 200 250 300 350 400  

0.3  

V

0.5  

0.7  

0.9  

1.1  

1.3  

1.5  

Q ,

 

TOTAL GATE CHARGE (nC)  

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)  

g

SD  

FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE  

FIGURE 12,

 

SOURCE-DRAIN DIODE FORWARD VOLTAGE  

350  

120  

V

= 400V  

DD  

= 5

Ω  

R

T

300  

G

t

d(off)  

100  

80  

= 125°C  

t

f  

J

L = 100

μ

H  

250  

V

= 400V  

DD  

= 5

Ω  

R

T

200  

150  

100  

G

= 125°C  

J

60  

L = 100

μ

H  

t

r  

40  

20  

0

50  

0

t

d(on)  

0

10 20 30 40 50 60 70 80  

(A)  

FIGURE 13,

 

DEL

A

Y

T

IMES vs CURRENT  

0

10 20  

30 40 50 60  

70 80  

I

I (A)  

D

D

FIGURE 14, RISE

 

AND FALL TIMES vs CURRENT  

2500  

2000  

1500  

1000  

4500  

V

I

= 400V  

V

= 400V  

DD  

= 47A  

DD  

= 5

Ω  

E

off  

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

E

off  

R

T

D

G

T

= 125°C  

= 125°C  

J

J

L = 100

μ

H  

L = 100

μ

H  

E

ON

includes  

E

ON

includes  

diode reverse recovery.  

diode reverse recovery.  

E

on  

500  

0

E

on  

0

0

10 20 30 40 50 60 70 80  

(A)  

0

5

10 15 20 25 30 35 40 45 50  

I

R ,

 

GATE RESISTANCE (Ohms)  

D

G

FIGURE 15,

 

SWITCHING ENERGY

 

vs CURRENT  

FIGURE 16, SWITCHING

 

ENERGY VS. GATE RESISTANCE  

Typical Performance Curves  

APT47N60BC3_SC3(G)  

90%  

10%  

Gate Voltage  

Gate Voltage  

T

J

= 125

 

C  

T

T

J

= 125

 

C  

t

d(on)  

t

d(off)  

t

f  

Collector Current  

t

90%  

r

Collector Current  

Collector Voltage  

90%  

10%  

0

5%  

5 %  

10%  

Switching Energy  

Collector Voltage  

Switching Energy  

Figure 18, Turn-off Switching Waveforms and De

fi

nitions  

Figure 17, Turn-on Switching Waveforms and De

fi

nitions  

APT30DF60  

V

CE  

I

C  

V

DD  

G

D.U.T.  

Figure 19, Inductive Switching Test Circuit  

Figure 20, Inductive Switching Test Circuit  

3

TO-247 (B) Package Outline  

D PAK

 

Package Outline  

e1 SAC:

 

Tin, Silver, Copper  

e3 100%

 

Sn Plated  

4.98 (.196)  

5.08 (.200)  

1.47 (.058)  

1.57 (.062)  

4.69 (.185)  

15.95 (.628)  

16.05(.632)  

13.41 (.528)  

13.51(.532)  

5.31 (.209)  

15.49 (.610)  

16.26 (.640)  

1.04 (.041)  

1.15(.045)  

1.49 (.059)  

2.49 (.098)  

5.38 (.212)  

6.20 (.244)  

6.15 (.242) BSC  

Revised  

8/29/97  

11.51 (.453)  

11.61 (.457)  

13.79 (.543)  

13.99(.551)  

Revised  

4/18/95  

20.80 (.819)  

21.46 (.845)  

3.50 (.138)  

3.81 (.150)  

0.46 (.018)  

0.56 (.022)  

{3 Plcs}  

1.27 (.050)  

1.40 (.055)  

0.020 (.001)  

0.178 (.007)  

2.67 (.105)  

2.84 (.112)  

2.87 (.113)  

3.12 (.123)  

3.81 (.150)  

4.50 (.177) Max.  

1.98 (.078)  

2.08 (.082)  

4.06 (.160)  

(Base of Lead)  

1.65 (.065)  

2.13 (.084)  

1.22 (.048)  

1.32 (.052)  

0.40 (.016)  

1.016(.040)  

19.81 (.780)  

20.32 (.800)  

Heat Sink (Drain)  

and Leads  

are Plated  

5.45 (.215) BSC  

{2 Plcs.  

1.01 (.040)  

1.40 (.055)  

Gate  

Drai n  

Source  

}

Source  

Drai n  

Gate  

2.21 (.087)  

2.59 (.102)  

5.45 (.215) BSC  

2-Plcs.  

Dimensions in Millimeters (Inches)  

Dimensions in Millimeters (Inches)