Microchip-Tech-APT5010B2FLLG
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APT5010B2FLL
APT5010LFLL
500V 46A 0.100
R
B2FLL
POWER MOS 7
FREDFET
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q .
Power MOS 7
®
combines lower conduction and switching losses
along
g
with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
T-MAX
LFLL
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg
Increased Power Dissipation
Easier To Drive
Popular
T-MAX
or TO-264 Package
D
S
G
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT5010B2FLL_LFLL
UNIT
V
DSS
I
D
Drain-Source Voltage
500
46
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
184
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
520
P
D
4.0
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
50
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
1600
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
500
2
Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 23A)
0.100
250
Ohms
Zero Gate Voltage Drain Current
(V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
I
DSS
µA
1000
±100
5
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT5010B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
UNIT
Characteristic
Tes
t
C
onditions
C
iss
V
= 0V
Input Capacitance
Output Capacitance
4360
895
60
95
24
50
11
15
25
GS
V
= 25V
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 250V
nC
ns
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DD
I
= 46A @ 25°C
D
RESISTIV
E
S
WITCHING
V
= 15V
GS
V
= 250V
DD
t
d(off)
I
= 46A@ 25°C
D
t
f
R
= 0.6
3
G
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
545
510
845
595
Turn-on Switching Energy
V
= 333V,
V =
15V
DD
I
GS
Turn-off Switching Energy
= 46A, R
= 5
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
D
µ
J
6
E
on
E
off
Turn-on Switching Energy
V
= 333V V
= 15V
DD
GS
Turn-off Switching Energy
I
= 46A, R
= 5
G
D
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
46
184
1.3
15
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
Pulsed Source Current
(Body Diode)
2
V
SD
Diode Forward Voltage
(V
GS
= 0V, I
S
= -46A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
Reverse Recovery Time
(I
S
= -46A,
di
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -46A,
di
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -46A,
di
dt
= 100A/µs)
/
dt
dt
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
280
600
t
rr
ns
µC
/
2.28
6.41
15.7
23.6
Q
rr
/
I
RRM
Amps
/
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.25
40
UNIT
Junction to Case
R
R
JC
JA
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice, th
e
s
pecification
s
a
n
d
i
nforatio
n
c
ontaine
d
h
erein.
4 Starting
T
j
= +25°C, L = 1.51mH, R
G
= 25
, Peak I
L
= 46A
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
–
I
46A
/
700A/µs
V
500V
T
150
°
C
dt
S
R
J
6 Eon
includes diode
D
reverse recovery.
See figures 18, 20.
0.30
0.9
0.25
0.20
0.7
0.15
0.10
0.5
0.3
Note:
t
1
t
2
0.1
0.05
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
C
0.05
0
SINGL
E
P
ULSE
-4
J
DM
JC
-5
-3
-2
-1
10
10
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
10
10
1.0
Typical Performance Curves
APT5010B2FLL_LFLL
120
100
80
15 &10V
8V
RC MODEL
Junction
temp. ( C)
7.5V
0.0131
0.00266F
0.00584F
0.0796F
0.460F
7V
0.0789
0.0811
0.230
60
Power
(watts)
6.5V
40
20
0
6V
5.5V
Case temperature. ( C)
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
1.2
100
V
> I
(ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
90
80
70
60
50
40
30
20
NORMALIZED TO
1.15
V
= 10V
@ 23A
GS
1.1
1.05
1.0
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
J
0.95
0.9
T
= +25°C
J
10
0
0
1
GS
2
3
4
5
6
7
8
9
10
0
20
40
60
80
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
50
40
30
20
10
0
25
50
C
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
1.2
2.5
I
= 23A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT5010B2FLL_LFLL
184
100
20,000
10,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
C
iss
100µS
1,000
C
oss
1mS
10
100
10
10mS
T
=+25°C
C
C
rss
T =+150°C
J
SINGL
E
P
ULSE
1
16
12
1
V
10
100
500
0
V
10
20
30
40
50
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
200
I
= 46A
D
100
V
=100V
DS
T =+150°C
J
V
=250V
DS
T =+25°C
8
4
0
J
V
=400V
DS
10
1
0
20
40
60
80
100 120 140
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
80
100
V
= 330V
DD
= 5
R
T
90
80
70
60
50
40
30
20
t
G
d(off)
70
60
50
40
30
20
= 125°C
J
L = 100µH
V
= 330V
DD
= 5
R
T
G
t
= 125°C
f
J
L = 100µH
t
r
t
d(on)
10
0
10
0
10
20
30
40
(A)
50
60
70
10
20
30
40
(A)
50
60
70
I
I
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
2500
1500
1200
900
V
I
= 330V
V
= 330V
DD
= 46A
DD
= 5
R
T
D
G
T
= 125°C
= 125°C
J
J
2000
1500
1000
500
0
L = 100µH
E
ON
includes
diode reverse recovery.
L = 100µH
E
ON
includes
diode reverse recovery.
E
E
off
on
E
on
600
300
0
E
off
10
20
30
40
(A)
50
60
70
0
5
10 15 20 25 30
35 40
45 50
G
I
D
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT5010B2FLL_LFLL
Gate Voltage
90%
10 %
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
t
d(off)
d(on)
t
Drain Voltage
Drain Current
r
Drain Current
Drain Voltage
90%
90%
t
f
5 %
5 %
10%
10 %
Switching Energy
Switching Energy
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT30DF60
V
DS
I
D
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX
TM
(B2) Package Outline
TO-26
4
(
L
)
P
ackag
e
O
utline
5.31 (.209)
2.49 (.098)
5.21 (.205)
16.26 (.640)
20.50 (.807)
2.01 (.079)
3.10 (.122)
3.48 (.137)
6.20 (.244)
6.20 (.244)
21.46 (.845)
26.49 (1.043)
4.50 (.177) Max.
3.12 (.123)
2.29 (.090)
2.69 (.106)
2.69 (.106)
2.13 (.084)
Gate
Drain
0.79 (.031)
2.59 (.102)
20.32 (.800)
Gate
Drain
Source
21.39 (.842)
1.40 (.055)
Source
0.84 (.033)
3.00 (.118)
1.30 (.051)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
