Microchip-Tech-APT5010JLLU3

Part #Microchip-Tech-APT5010JLLU3
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Microchip-Tech-APT5010JLLU3
APT5010JLLU3  
V

DSS

= 500V  
R

DSon

= 100m
max @ Tj = 25°C  
I

D

= 41A @ Tc = 25°C  
ISOTOP

®

Buck chopper  
MOSFET Power Module  
D
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Features  
G
Power MOS 7

®

MOSFETs  
–
–
–
–
–
–
Low R

DSon  

Low input and Miller capacitance  
Low gate charge  
Fast intrinsic reverse diode  
Avalanche energy rated  
Very rugged  
S
ISOTOP

®

Package (SOT-227)  
Very low stray inductance  
High level of integration  
A
A
S
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Very rugged  
Low profile  
RoHS Compliant  
D
G
ISOTOP

  

Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
V

DSS  

Drain – Source Breakdown Voltage  
500  
41  
30  
V
T

c

= 25°C  
T

c

= 80°C  
I

D  

Continuous Drain Current  
A
I

DM  

V

GS  

R

DSon  

Pulsed Drain current  
Gate – Source Voltage  
Drain – Source ON Resistance  
164  
±30  
100  
V
m
 
W
P

D  

Maximum Power Dissipation  
T

c

= 25°C  
Tc = 80°C  
378  
I

AR  

E

AR  

E

AS  

IF

AV  

IF

RMS  

Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
Maximum Average Forward Current  
RMS Forward Current (Square wave, 50% duty)  
41  
50  
1600  
30  
39  
A
mJ  
A
Duty cycle=0.5  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
1 – 8  

APT5010JLLU3  
All ratings @ T

j

= 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max
 
Unit  
V

GS

= 0V,V

DS

= 500V  
T

j

= 25°C  
100  
I

DSS  

Zero Gate Voltage Drain Current  
µA  
V

GS

= 0V,V

DS

= 400V  
T

j

= 125°C  
500  
R

DS(on)

Drain – Source on Resistance  
V

GS(th)

Gate Threshold Voltage  
V

GS

= 10V, I

D

= 23A  
100  
5
±100 nA  
m
  
V
V

GS

= V

DS

, I

D

= 2.5mA  
V

GS

= ±20 V, V

DS

= 0V  
3
I

GSS  

Gate – Source Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max
 
Unit  
C

iss  

C

oss  

C

rss  

Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
4360  
894  
60  
V

GS

= 0V  
V

DS

= 25V  
pF  
f = 1MHz  
Q

g  

Q

gs  

Q

gd  

Total gate Charge  
96  
24  
49  
V

GS

= 10V  
V

Bus

= 250V  
nC  
Gate – Source Charge  
Gate – Drain Charge  
I

D

= 41A @ T

J

=25°C  
Resistive switching @ 25°C  

GS

= 15V  
V

Bus

= 250V  
I

D

= 41A @ T

J

=25°C  
R

G

= 0.6
  
T

d(on)  

T

r  

Turn-on Delay Time  
Rise Time  
11  
15  
25  
3
V
ns  
T

d(off)

Turn-off Delay Time  
T

f  

Fall Time  
Inductive Switching @ 25°C  
Turn-on Switching Energy  
Turn-off Switching Energy  
Turn-on Switching Energy  
Turn-off Switching Energy  
543  
509  
843  
593  
E

on  

E

off  

E

on  

E

off  

µJ  
µJ  
V

bus

= 330V, V

GS

=15V  
I

D

=46A, R

G

=5
Ω
 
Inductive Switching @ 125°C  
V

bus

= 330V, V

GS

=15V  
I

D

=46A, R

G

=5
Ω  
Chopper diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max
 
Unit  
I

F

= 30A  
I

F

= 60A  
I

F

= 30A  
V

R

= 600V  
V

R

= 600V  
V

R

= 200V  
I

F

=1A,V

R

=30V  
di/dt =100A/µs  
1.6  
1.9  
1.4  
1.8  
V

F  

Diode Forward Voltage  
V
T

j

= 125°C  
T

j

= 25°C  
T

j

= 125°C  
250  
500  
I

RM  

C

T  

Maximum Reverse Leakage Current  
Junction Capacitance  
µA  
pF  
44  
23  
Reverse Recovery Time  
T

j

= 25°C  
t

rr  

ns  
T

j

= 25°C  
T

j

= 125°C  
T

j

= 25°C  
T

j

= 125°C  
T

j

= 25°C  
85  
160  
4
Reverse Recovery Time  
I

F

= 30A  
V

R

= 400V  
di/dt =200A/µs  
I

RRM  

Q

rr  

Maximum Reverse Recovery Current  
A
8
130  
Reverse Recovery Charge  
nC  
T

j

= 125°C  
700  
t

rr  

Reverse Recovery Time  
70  
1300  
30  
ns  
nC  
A
I

F

= 30A  
V

R

= 400V  
di/dt =1000A/µs  
T

j

= 125°C  
Q

rr  

I

RRM  

Reverse Recovery Charge  
Maximum Reverse Recovery Current  
2 – 8  

APT5010JLLU3  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
MOSFET  
Diode  
0.33  
1.21  
20  
R

thJC  

Junction to Case Thermal Resistance  
°C/W  
R

thJA  

Junction to Ambient (IGBT & Diode)  
RMS Isolation Voltage, any terminal to case t =1 min,
 
50/60Hz  
T

J

,T

STG

Storage Temperature Range  
T

L

Max Lead Temp for Soldering:0.063” from case for 10 sec  
V

ISOL  

2500  
-55  
V
150  
300  
1.5  
°C  
Torque Mounting
 
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)  
N.m  
g
Wt  
Package Weight  
29.2  
Typical
MOSFET Performance Curve  
3 – 8  

APT5010JLLU3  
4 – 8  

APT5010JLLU3  
Typical Diode Performance Curve  
5 – 8  

APT5010JLLU3  
6 – 8  

APT5010JLLU3  
SOT-227 (ISOTOP

®

) Package Outline  
11.8 (.463)  
12.2 (.480)  
31.5 (1.240)  
31.7 (1.248)  
8.9 (.350)  
9.6 (.378)  
W=4.1 (.161)  
W=4.3 (.169)  
H=4.8 (.187)  
H=4.9 (.193)  
(4 places)  
7.8 (.307)  
8.2 (.322)  
Hex Nut M4  
(4 places)  
25.2 (0.992)  
25.4 (1.000)  
r = 4.0 (.157)  
(2 places)  
4.0 (.157)  
4.2 (.165)  
(2 places)  
0.75 (.030)
 
12.6 (.496)  
0.85 (.033)
 
12.8 (.504)  
3.3 (.129)  
3.6 (.143)  
1.95 (.077)  
2.14 (.084)  
14.9 (.587)  
15.1 (.594)  
Drain  
Anode  
30.1 (1.185)  
30.3 (1.193)  
38.0 (1.496)  
38.2 (1.504)  
Source  
Dimensions in Millimeters and (Inches)  
Gate  
ISOTOP® is a registered trademark of ST Microelectronics NV  
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APT5010JLLU3  
DISCLAIMER  
The information contained in the document (unless it is publicly available on the Web without access restrictions) is  
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,  
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the  
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement  
will also apply.
 
This document and the information contained herein may not be modified, by any person other than  
authorized personnel of Microsemi.
 
No license under any patent, copyright, trade secret or other intellectual
 
property  
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,  
inducement, estoppels or
 
otherwise. Any
 
license under such intellectual property rights must be approved by  
Microsemi in writing signed by an officer of Microsemi.  
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime  
without any notice.
 
This product has been subject to limited testing and should not be used in conjunction with life-  
support or other mission-critical equipment or applications.
 
Microsemi assumes no liability whatsoever, and Microsemi  
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or  
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other  
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or  
user must conduct and complete all performance and other testing of this product as well as any user or customers final  
application. User or customer shall not rely on any data and performance specifications or parameters provided by  
Microsemi. It
 
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi  
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all  
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims  
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product  
Life Support Application  
Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,  
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other  
application in which the failure of the Seller’s Product could create a situation where personal injury, death or property  
damage or loss may occur (collectively “Life Support Applications”).  
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive  
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,  
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and  
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage  
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations  
that Seller was negligent regarding the design or manufacture of the goods.  
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with  
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the  
new proposed specific part.  
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