Microchip-Tech-APT5014SLLG
| Part # | Microchip-Tech-APT5014SLLG |
Download  | Microchip-Tech-APT5014SLLG |
APT5014BLL
(G)
APT5014SLL
(G)
500V 35A 0.140
Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
D
3
PAK
TO-247
POWER MOS 7
MOSFET
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increase
d
P
owe
r
D
issipation
• Easier To Drive
• TO-247 or Surface Mount D
3
PAK Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT5014BLL-SLL
(G)
UNIT
V
DSS
I
D
Drain-Source Voltage
500
35
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
1
I
D
M
Pulsed Drain Current
140
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
Volts
±40
Watts
W/°C
403
P
D
3.22
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
35
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
30
4
1300
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
500
2
Drain-Source On-State Resistance
(V
GS
= 10V, 17.5A)
0.140
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1mA)
I
DSS
µA
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT5014 BLL – SLL(G)
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Tes
t
C
onditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
3261
704
50
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
72
GS
V
= 250V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
20
nC
ns
I
= 35A @ 25°C
D
36
RESISTIV
E
S
WITCHING
11
V
= 15V
GS
6
V
= 250V
DD
I
= 35A @ 25°C
t
d(off)
23
Turn-off Delay Time
Fall Time
D
R
= 1.6
Ω
G
t
f
3
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
325
249
545
288
V
= 333V,
V =
15V
GS
DD
I
= 35A,
R =
5
Ω
Turn-off Switching Energy
D
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
µ
J
6
Turn-on Switching Energy
V
= 333V, V
= 15V
GS
DD
I
= 35A,
R =
5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
MIN
TYP
MAX
35
Characteristic / Test Conditions
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
I
SM
1
140
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
V
SD
t
r
r
(V
GS
= 0V, I
S
= -35
A
)
Volts
ns
Reverse Recovery Time
(I
S
= -35
A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -35
A
, dl
S
/dt = 100A/µs)
510
10
Q
rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
8
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
4 Starting
T =
+25°C, L = 2.12mH, R
= 25
Ω
, Peak I
= 35A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤
–
35A
/
≤
700A/µs
V
R
≤
500V
T
≤
150
°
C
J
dt
S
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
t
1
0.3
0.10
t
2
t
1
/
t
0.05
Duty Factor
D =
Peak T
= P
x Z
2
+ T
0.1
SINGL
E
P
ULSE
J
DM
θ
JC
C
0.05
0
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
APT5014 BLL – SLL(G)
Typical Performance Curves
100
80
60
20
20
0
15 &10V
8V
RC MODEL
Junction
temp. (
°
C)
7V
0.119
0.191
0.0135F
0.319F
6.5V
Power
(watts)
6V
5.5V
5V
Case temperature. (
°
C)
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAG
E
O
UTPU
T
C
HARACTERISTICS
100
1.2
NORMALIZED TO
V
= 10V
@
17.5A
GS
1.15
1.10
80
60
40
V
=10V
GS
1.05
1.0
V
=20V
GS
T
= +125°C
J
T
= +25°C
J
20
0
0.95
0.90
T
= -55°C
8
J
0
1
2
3
4
5
6
7
9
0
10
20
30
40
50
60
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
,
T
RANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
1.00
35
30
25
20
15
10
0.95
0.90
0.85
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
2.5
1.2
I
= 17.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
Typical Performance Curves
APT5014 BLL – SLL(G)
10,000
1,000
100
140
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
C
iss
50
10
100µS
C
oss
1mS
C
rss
T
=+25°C
C
T =+150°C
10mS
J
SINGL
E
P
ULSE
1
10
1
5
10
50 100
500
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1,CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
16
14
12
10
8
200
I
= 35A
D
100
50
V
=100V
DS
T =+150°C
J
T =+25°C
J
V
=250V
DS
V
=400V
DS
10
5
6
4
2
0
1
0
20
40
60
80
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
V
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
3
,
S
OURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
60
70
V
= 333V
DD
= 5
Ω
R
T
t
G
d(off)
60
50
40
30
20
10
0
50
= 125°C
J
t
f
L = 100µH
V
= 333V
40
30
20
10
0
DD
= 5
Ω
R
T
G
= 125°C
J
L = 100µH
t
r
t
d(on)
0
10
20
30
(A)
40
50
60
0
10
20
30
40
50
60
I
I
(A)
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
1400
1200
1000
800
600
400
200
0
1000
800
600
400
V
= 333V
V
I
= 333V
DD
DD
= 35A
R
= 5
Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
E
ON
includes
E
ON
includes
diode reverse recovery.
diode reverse recovery.
E
on
E
on
200
0
E
off
0
10
20
30
(A)
40
50
60
0
5
10 15 20 25 30 35 40 45 50
I
D
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT501
4
B
LL_SLL
(G)
Gate Voltage
10 %
90%
T
= 125 C
Gate Voltage
J
T
= 125 C
J
t
t
d(on)
d(off)
90%
t
r
Drain Voltage
Drain Current
90%
Drain Current
t
f
5 %
10 %
10%
0
Drain Voltage
Switching Energy
Switching Energy
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT30DF60
V
DS
I
D
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D
3
PA
K
P
ackag
e
O
utline
TO
–
247 Package Outline
e3 100% Sn Plated
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
