Microchip-Tech-APT5015BVFRG
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APT5015BVFR
APT5015SVFR
500V 32A
0.150
Ω
BVFR
POWER MOS V
®
FREDFET
D
3
PAK
SVFR
TO-247
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faste
r
S
witching
• Avalanch
e
E
nerg
y
R
ated
D
S
• Lowe
r
L
eakage
• TO-24
7
o
r
Surfac
e
M
oun
t
D
3
PA
K
P
ackage
G
• Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT5015BVFR_SVFR
UNIT
V
DSS
I
D
Drain-Source Voltage
500
32
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
DM
Pulsed Drain Current
128
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Watts
W/°C
370
P
D
2.96
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
30
1
E
AR
E
AS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
500
32
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
Volts
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
0.15
250
1000
±100
4
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5015BVFR_SVFR
Test Conditions
GS
= 0V
MIN
MIN
MIN
TYP
4400
600
230
200
30
MAX
5280
840
350
300
45
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
V
Output Capacitance
pF
V
DS
= 25V
f = 1 MHz
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
V
DD
= 0.5 V
DSS
Q
gs
Q
gd
t
d
(on)
t
r
nC
ns
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
I
D
= I
D
[Cont.] @ 25°C
80
120
25
12
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.6
Ω
14
30
t
d
(off)
t
f
Turn-off Delay Time
Fall Time
55
80
11
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
TYP
MAX
32
UNIT
Continuous Source Current
(Body Diode)
I
S
Amps
1
I
SM
V
SD
Pulsed Source Current
(Body Diode)
128
1.3
15
2
Diode Forward Voltage
Peak Diode Recovery
dv
Reverse Recovery Time
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
250
525
ns
µC
t
rr
(I
S
= -I
D
[Cont.],
di
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
dt
= 100A/µs)
/
dt
= 100A/µs)
1.6
6.0
13
Q
rr
/
I
RRM
Amps
/
21
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.34
40
UNIT
Junction to Case
R
θ
JC
R
θ
JA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.54mH, R
= 25
Ω
, Peak I
= 32A
j
G
L
di
I
S
– -I
[Cont.],
/
= 100A/µs, V
– V
, T – 150°C, R
= 2.0
Ω
,
DSS j
G
D
DD
dt
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
t
1
0.01
0.005
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
SINGLE PULSE
2
+ T
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT5015BVFR_SVFR
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
=6V, 7V, 8V, 10V & 15V
5.5V
V
=15V
GS
GS
6V
V
=7V, 8V & 10V
GS
5.5V
5V
4V
5V
4.5V
4.5V
10
4V
200
0
V
50
100
150
250
0
V
2
4
6
8
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
60
1.5
T
= -55°C
NORMALIZED TO
= 10V
0.5 [Cont.]
J
V
@
I
D
GS
T
= +125°C
J
V
> I
(ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
DS
D
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
= -55°C
6
T
J
J
0
V
2
4
8
0
20
40
60
80
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
35
1.15
1.10
1.05
1.00
0.95
0.90
0.85
30
25
20
15
10
5
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100
125 150
T ,
CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5
I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (°C)
T ,
CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT5015BVFR_SVFR
200
100
50
20,000
10,000
5,000
10µS
OPERATION HERE
LIMITED BY R
(ON)
DS
100µS
C
iss
1mS
10
5
C
oss
10mS
1,000
500
C
100mS
DC
rss
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
500
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
20
16
12
8
I
= I
[Cont.]
D
D
V
=100V
DS
=250V
100
V
T
=+150°C
T =+25°C
J
DS
J
50
V
=400V
DS
10
5
4
1
0
0
50
100 150 200 250 300 350
0
V
0.4
0.8
1.2
1.6
2.0
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D
3
PAK Package Outline
(SVFR)
TO
–
247 Package Outline (BVFR)
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
4.98 (.196)
5.08 (.200)
1.49 (.059)
2.49 (.098)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
1.04 (.041)
1.15 (.045)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
1.27 (.050)
1.40 (.055)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.020 (.001)
0.178 (.007)
2.40 (.094)
2.70 (.106)
1.98 (.078)
2.08 (.082)
1.65 (.065)
2.13 (.084)
2.67 (.105)
2.84 (.112)
(Base of Lead)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
