Microchip-Tech-APT5024BLLG
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APT5024BLL
(G)
APT5024SLL
(G)
500V 22A 0.240
Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
BLL
POWER MOS 7
MOSFET
D
3
PAK
TO-247
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
SLL
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increase
d
P
owe
r
D
issipation
• Easier To Drive
• TO-247 or Surface Mount D
3
PAK Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT5024BLL_SLL
(G)
UNIT
V
DSS
I
D
Drain-Source Voltage
500
22
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
DM
Pulsed Drain Current
88
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
265
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Watts
W/°C
P
D
2.12
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
22
1
E
AR
E
AS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
500
22
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
Volts
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 11A)
Ohms
µA
0.24
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1mA)
I
DSS
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT5024BLL_SLL
(G)
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Tes
t
C
onditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
1900
417
27
43
12
24
8
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 250V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
I
= 22A @ 25°C
D
RESISTIV
E
S
WITCHING
V
= 15V
GS
6
V
= 250V
DD
ns
µ
J
I
= 22A @ 25°C
t
d(off)
18
Turn-off Delay Time
Fall Time
D
R
= 1.6
Ω
G
t
f
2
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
167
86
V
= 333V,
V =
15V
GS
DD
I
= 22A, R
= 5
Ω
Turn-off Switching Energy
D
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
6
262
99
Turn-on Switching Energy
V
= 333V V
= 15V
GS
DD
I
= 22A, R
= 5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
MIN
TYP
MAX
22
Characteristic / Test Conditions
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
88
Pulsed Source Current
(Body Diode)
2
V
SD
t
rr
1.3
Diode Forward Voltage
(V
GS
= 0V, I
S
= -I
D
22A
)
Volts
ns
516
7
Reverse Recovery Time
(I
S
= -I
D
22A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
22A
, dl
S
/dt = 100A/µs)
Q
rr
µC
dv
/
dv
5
V/ns
8
Peak Diode Recovery
/
dt
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.47
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting
T = +25°C, L = 3.97mH, R
= 25
Ω
, Peak I
= 22A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤
–
I
22A
/
≤
700A/µs
V
R
≤
V
T
≤
150
°
C
J
dt
S
D
DSS
3 See
MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.50
0.9
0.40
0.7
0.30
0.5
Note:
0.20
t
1
0.3
t
2
0.10
t
1
Duty Factor
D =
/
t
2
0.1
Peak T
= P
x Z
+ T
θ
JC C
J
DM
0.05
SINGL
E
P
ULSE
0
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
Typical Performance Curves
APT5024BLL_SLL
(G)
60
50
40
30
20
V
=1
5
&
10V
GS
8V
RC MODEL
7.5V
Junction
temp. ( ”C)
7V
0.205
0.264
0.00544F
0.0981F
Power
(Watts)
6.5V
6V
10
0
Case temperature
5.5V
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
1.7
60
NORMALIZED TO
V
> I
(ON) x
DS
R
(ON)MAX.
DS
1.6
D
V
= 10V
@
11A
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
40
30
1.5
1.4
1.3
1.2
1.1
V
=10V
GS
20
10
0
V
=20V
50
GS
T
= +125°C
J
T
= -55°C
J
1.0
0.9
T
= +25°C
J
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
60
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
20
15
10
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
1.2
2.5
I
= 11A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
Typical Performance Curves
APT5024BLL_SLL
(G)
89
10,000
5,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
C
iss
1,000
100
10
100µS
1mS
C
oss
10
T
=+25°C
C
J
T =+150°C
SINGL
E
P
ULSE
C
rss
10mS
1
16
12
1
10
100
500
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
200
I
= 22A
D
V
=100V
DS
100
V
=250V
DS
V
=400V
DS
T =+150°C
J
8
4
0
T =+25°C
J
10
1
0
10
20
30
40
50
60
70
80
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
50
40
V
= 333V
DD
= 5
Ω
R
T
t
d(off)
G
= 125°C
J
40
30
20
L = 100µH
30
20
V
= 333V
DD
= 5
Ω
R
T
G
= 125°C
t
J
f
L = 100µH
t
r
10
0
t
d(on)
10
0
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
500
400
300
200
500
V
= 333V
DD
= 5
Ω
E
off
R
T
G
= 125°C
E
J
400
300
200
on
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
V
I
= 333V
DD
= 22A
D
T
= 125°C
E
J
off
100
0
100
0
L = 100µH
E
ON
includes
diode reverse recovery.
0
10
20
(A)
30
40
0
5
10 15 20 25 30
35 40
45 50
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
I
D
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
APT5024BLL_SLL
(G)
Gate Voltage
10 %
90%
T
= 125 C
Gate Voltage
Drain Voltage
T
= 125 C
J
J
t
d(off)
t
d(on)
Drain Current
Drain Voltage
90%
90%
10 %
t
r
t
5 %
f
5 %
10%
0
Drain Current
Switching Energy
Switching Energy
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT15DF60
V
DS
I
D
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D
3
PA
K
P
ackag
e
O
utline
TO
–
247 Package Outline
4.69 (.185)
e3 100% Sn Plated
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
16.05 (.632)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
