Microchip-Tech-APT50M38JLL
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APT50M38JLL
500V 88A 0.038
Ω
R
S
POWER MOS 7
MOSFET
S
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
D
G
SOT-227
“UL Recognized”
ISOTOP
®
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT50M38JLL
UNIT
V
DSS
I
D
Drain-Source Voltage
500
88
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
352
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
694
P
D
5.56
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
88
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3600
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
500
2
Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 44A)
0.038
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5mA)
I
DSS
µA
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT50M38JLL
Tes
t
C
onditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
12000
2540
125
270
70
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 250V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
I
= 88A @ 25°C
D
140
17
RESISTIV
E
S
WITCHING
V
= 15V
GS
22
V
= 250V
DD
ns
µ
J
I
= 88A @ 25°C
D
t
d(off)
50
Turn-off Delay Time
Fall Time
R
= 0.6
Ω
G
t
f
4
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
1295
940
V
= 333V,
V =
15V
GS
DD
I
= 88A, R
= 5
Ω
Turn-off Switching Energy
D
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
6
1875
1165
Turn-on Switching Energy
V
= 333V V
= 15V
GS
DD
I
= 88A, R
= 5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
MIN
TYP
MAX
88
Characteristic / Test Conditions
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
352
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
V
SD
t
rr
(V
GS
= 0V, I
S
= -88A)
Volts
ns
880
Reverse Recovery Time
(I
S
= -88A, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -88A, dl
S
/dt = 100A/µs)
Q
r
r
31.0
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
8
dt
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
4
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
Starting T = +25°C, L = 0.93mH, R
= 25
Ω
, Peak I
= 88A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤
–
I
88A
/
≤
700A/µs
V
R
≤
500V
T
≤
150
°
C
J
dt
S
D
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.20
0.18
0.9
0.16
0.14
0.7
0.12
0.10
0.5
Note:
0.08
t
1
0.3
0.06
0.04
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
0.1
J
DM
θ
JC
C
0.02
0
0.05
SINGL
E
P
ULSE
10
-2
10
-5
10
-4
10
-3
10
-1
1.0
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
Typical Performance Curves
APT50M38JLL
300
250
200
150
100
15 &10V
RC MODEL
Junction
temp. ( ”C)
8V
7.5V
0.0244
0.0731F
0.701F
20.1F
7V
Power
0.133
(Watts)
6.5V
0.0218
6V
50
0
Case temperature
5.5V
30
0
5
10
15
20
25
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
,
T
RANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAG
E
O
UTPU
T
C
HARACTERISTICS
250
1.4
NORMALIZED TO
V
> I
(ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@ 44A
GS
1.3
1.2
1.1
1.0
200
150
100
T
= -55°C
J
V
=10V
GS
T
J
= +125°C
= +25°C
T
J
V
=20V
GS
50
0
0.9
0.8
0
V
1
2
3
4
5
6
7
8
0
20 40 60 80
100 120 140 160 180
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
GS
D
FIGUR
E
4
,
T
RANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
2.5
1.2
I
= 44A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT50M38JLL
352
100
40,000
10,000
OPERATION HERE
LIMITED BY R
(ON)
DS
C
iss
100µS
C
oss
1,000
1mS
10
10mS
C
rss
100
10
T
T
=+25°C
=+150°C
C
J
SINGLE PULSE
1
1
V
10
100
500
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
400
I
= 88A
D
100
10
1
T
=+150°C
12
8
J
T =+25°C
J
V
V
=100V
=250V
DS
DS
V
=400V
DS
4
0
0
50 100
150 200 250 300 350
400
Q ,
TOTAL GATE CHARGE (nC)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
140
V
= 333V
DD
= 5
Ω
t
R
T
d(off)
G
120
100
100
80
60
40
20
0
= 125°C
J
L = 100µH
t
f
V
= 333V
DD
= 5
Ω
R
T
G
80
60
40
20
0
= 125°C
J
L = 100µH
t
d(on)
t
r
20
40
60
80
(A)
100
120
140
20
40
60
80
(A)
100
120
140
I
I
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
3500
3000
2500
2000
1500
1000
3500
V
= 333V
DD
R
= 5
Ω
E
off
G
3000
2500
2000
1500
1000
T
= 125°C
J
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
E
on
V
I
= 333V
DD
= 88A
D
T
= 125°C
J
E
off
L = 100µH
500
0
500
0
E
ON
includes
diode reverse recovery.
20
40
60
80
(A)
100
120
140
0
5
10
15
20
I
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
D
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
APT50M38JLL
90%
10%
Gat
e
V
oltage
T 125°C
T 125°C
J
Gat
e
V
oltage
Drai
n
C
urrent
J
t
d(off)
90%
t
d(on)
Drai
n
V
oltage
t
f
t
r
90%
10%
0
5%
Drai
n
V
oltage
5%
10%
Drai
n
C
urrent
Switchin
g
E
nergy
Switchin
g
E
nergy
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
9
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT60DF60
V
CE
I
C
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-22
7
(
ISOTOP
®
)
P
ackag
e
O
utline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP
®
i
s
a
R
egistere
d
T
rademar
k
o
f
S
G
S
T
homson.
