Microchip-Tech-APT50N60JCCU2

APT50N60JCCU2  

ISOTOP

®

Boost chopper  

Super Junction  

V

DSS

= 600V  

I

D

= 50A @ Tc = 25°C  

R

MOSFET Power Module  

Application  

AC and DC motor control  

•

K

•

•

•

Switched Mode Power Supplies  

Power Factor Correction  

Brake switch  

D

Features  

•

G

–

Ultra low R

DSon  

–

–

–

Low Miller capacitance  

Ultra low gate charge  

Avalanche energy rated  

S

•

SiC Schottky Diode  

–

–

–

–

Zero reverse recovery  

Zero forward recovery  

Temperature Independent switching behavior  

Positive temperature coefficient on VF  

K

S

•

•

•

ISOTOP

®

Package (SOT-227)  

Very low stray inductance  

High level of integration  

D

G

Benefits  

•

•

•

•

•

•

•

Outstanding performance at high frequency operation  

Stable temperature behavior  

Very rugged  

Direct mounting to heatsink (isolated package)  

Low junction to case thermal resistance  

Easy paralleling due to positive TC of VCEsat  

RoHS Compliant  

Absolute maximum ratings  

Symbol  

Parameter  

Max ratings  

Unit  

V

DSS  

Drain – Source Breakdown Voltage  

600  

50  

38  

V

T

c

= 25°C  

T

c

= 80°C  

I

D  

Continuous Drain Current  

A

I

DM  

V

GS  

R

DSon  

Pulsed Drain current  

Gate – Source Voltage  

Drain – Source ON Resistance  

130  

±20  

45  

V

m

Ω

 

W

P

D  

Maximum Power Dissipation  

T

c

= 25°C  

290  

I

AR  

E

AR  

E

AS  

Avalanche current (repetitive and non repetitive)  

Repetitive Avalanche Energy  

Single Pulse Avalanche Energy  

15  

3

1900  

A

mJ  

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  

1 – 4  

APT50N60JCCU2  

All ratings @ T

j

= 25°C unless otherwise specified  

Electrical Characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max Unit  

V

GS

= 0V,V

DS

= 600V  

V

GS

= 0V,V

DS

= 600V  

T

j

= 25°C  

250  

µA  

I

DSS  

Zero Gate Voltage Drain Current  

T

j

= 125°C  

500  

R

DS(on)

Drain – Source on Resistance  

V

GS(th)

Gate Threshold Voltage  

V

40  

3

45  

3.9  

100  

m

Ω  

V

nA  

V

GS

= V

DS

, I

D

= 3mA  

V

GS

= ±20 V, V

DS

= 0V  

2.1  

I

GSS  

Gate – Source Leakage Current  

Dynamic Characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max Unit  

C

iss  

C

oss  

Input Capacitance  

Output Capacitance  

6.8  

0.32  

V

nF  

f = 1MHz  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total gate Charge  

Gate – Source Charge  

Gate – Drain Charge  

Turn-on Delay Time  

Rise Time  

150  

V

GS

= 10V  

V

Bus

= 300V  

I

D

= 44A  

34  

51  

nC  

ns  

30  

Tj=25°C  

V

GS

= 10V  

20  

V

Bus

= 400V  

I

D

= 44A  

R

G

= 3.3

Ω  

T

d(off)

Turn-off Delay Time  

100  

20  

T

f  

Fall Time  

Tj=25°C  

E

on  

E

off  

E

on  

E

off  

Turn-on Switching Energy  

Turn-off Switching Energy  

Turn-on Switching Energy  

Turn-off Switching Energy  

405  

520  

660  

635  

V

GS

= 10V ; V

Bus

= 400V  

I

D

= 44A ; R

G

= 3.3

Ω  

Tj=125°C  

V

GS

= 10V ; V

Bus

= 400V  

I

D

= 44A ; R

G

= 3.3

Ω  

µJ  

µJ  

V

ns  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse Recovery Charge  

V

GS

= 0V, I

S

= – 44A  

0.9  

600  

17  

1.2  

I

S

= – 44A  

V

R

= 400V  

di

S

/dt = 100A/µs  

T

j

= 25°C  

T

j

= 25°C  

Q

rr  

µC  

SiC chopper diode ratings and characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max Unit  

Maximum Peak Repetitive Reverse Voltage  

V

RRM  

I

RM  

I

F(AV)  

V

F  

600  

V

µA  

A

T

j

= 25°C  

T

j

= 175°C  

Tc = 125°C  

T

j

= 25°C  

T

j

= 175°C  

100  

200 2000  

20  

1.6  

2

400  

Maximum Reverse Leakage Current  

Maximum Average Forward Current  

Diode Forward Voltage  

V

R

=600V  

50% duty cycle  

I

F

= 20A  

1.8  

2.4  

V

I

F

= 20A, V

R

= 300V  

di/dt =800A/µs  

Q

C  

Q

Total Capacitive Charge  

Total Capacitance  

28  

nC  

pF  

f = 1MHz, V

R

= 200V  

f = 1MHz, V

R

= 400V  

130  

100  

2 – 4  

APT50N60JCCU2  

Thermal and package characteristics  

Symbol Characteristic  

Min Typ Max Unit  

CoolMos  

SiC Diode  

0.43  

1.4  

20  

R

thJC  

Junction to Case Thermal Resistance  

Junction to Ambient (IGBT & Diode)  

°C/W  

R

thJA  

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  

T

J

,T

STG

Storage Temperature Range  

Max Lead Temp for Soldering:0.063” from case for 10 sec  

Torque Mounting

 

torque

(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)  

V

ISOL  

2500  

-40  

V

150  

300  

1.5  

°C  

T

L  

N.m  

g

Wt  

Package Weight  

29.2  

SOT-227 (ISOTOP

®

) Package Outline  

11.8 (.463)  

12.2 (.480)  

31.5 (1.240)  

31.7 (1.248)  

8.9 (.350)  

9.6 (.378)  

W=4.1 (.161)  

W=4.3 (.169)  

H=4.8 (.187)  

H=4.9 (.193)  

(4 places)  

7.8 (.307)  

8.2 (.322)  

Hex Nut M4  

(4 places)  

25.2 (0.992)  

25.4 (1.000)  

r = 4.0 (.157)  

(2 places)  

4.0 (.157)  

4.2 (.165)  

(2 places)  

0.75 (.030)

 

12.6 (.496)  

0.85 (.033)

 

12.8 (.504)  

3.3 (.129)  

3.6 (.143)  

1.95 (.077)  

2.14 (.084)  

14.9 (.587)  

15.1 (.594)  

Drain  

Cathode  

30.1 (1.185)  

30.3 (1.193)  

* Emitter terminals are shorted  

internally. Current handling  

capability is equal for either  

Emitter terminal.  

38.0 (1.496)  

38.2 (1.504)  

Source  

Dimensions in Millimeters and (Inches)  

Gate  

“COOLMOS™ comprise

 

a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon  

Technologies AG”.  

ISOTOP® is a registered trademark of ST Microelectronics NV  

3 – 4  

APT50N60JCCU2  

DISCLAIMER  

The information contained in the document (unless it is publicly available on the Web without access restrictions) is  

PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,  

transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the  

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will also apply.

 

This document and the information contained herein may not be modified, by any person other than  

authorized personnel of Microsemi.

 

No license under any patent, copyright, trade secret or other intellectual

 

property  

right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,  

inducement, estoppels or

 

otherwise. Any

 

license under such intellectual property rights must be approved by  

Microsemi in writing signed by an officer of Microsemi.  

Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime  

without any notice.

 

This product has been subject to limited testing and should not be used in conjunction with life-  

support or other mission-critical equipment or applications.

 

Microsemi assumes no liability whatsoever, and Microsemi  

disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or  

warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other  

intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or  

user must conduct and complete all performance and other testing of this product as well as any user or customers final  

application. User or customer shall not rely on any data and performance specifications or parameters provided by  

Microsemi. It

 

is the customer’s and user’s responsibility to independently determine suitability of any Microsemi  

product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all  

faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims  

any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product  

Life Support Application  

Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,  

aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other  

application in which the failure of the Seller’s Product could create a situation where personal injury, death or property  

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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive  

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expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage  

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that Seller was negligent regarding the design or manufacture of the goods.  

Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with  

Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the  

new proposed specific part.  

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