Microchip-Tech-APT53F80J
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APT53F80J
800V, 57A, 0.11
Ω
Max, t
≤
470ns
rr
N-Channel FREDFET
S
S
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFE
T
.
7
2
D
-2
G
This ‘FREDFET’ version has a drain-source (body) diode that has been optimized for
T
O
high reliability in ZVS phase shifted bridge and other circuits through reduced t
, soft
rr
recovery, and high recovery dv/dt capability.
Low gate charge, high gain, and a greatly
S
“UL Recognized”
file # E145592
reduced ratio of C
/C result
in excellent noise immunity and low switching loss.
The
rss iss
ISOTOP
®
APT53F80J
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS
phase shifted and other full bridge
• Fast
switching with low EMI
• Half
bridge
• Low
t for
high reliability
rr
• PFC
and other boost converter
• Buck
converter
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
57
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
36
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
325
±30
3725
43
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
960
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
Junction to Case Thermal Resistance
0.13
°C/W
R
θ
CS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction
T
e
mperature Range
0.15
T
J
,T
STG
V
Isolation
°C
V
-55
150
RMS Voltage
(50-60hHz Sinusoidal Waveform from
T
e
rminals to Mounting Base for 1 Min.)
2500
oz
g
1.03
29.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
T
e
rminals and Mounting Screws.
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT53F80J
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coef
fi
cient
800
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.87
0.07
4
V
= 10V
,
I =
43A
D
R
DS(on)
V
GS(th)
0.11
5
GS
V
2.5
V
= V
DS
,
I =
5mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 800V
= 0V
T =
25°C
J
250
1000
±100
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
T =
125°C
J
GS
V
= ±30V
nA
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
80
Max
Unit
g
fs
V
= 50V
,
I =
43A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
17550
300
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
1745
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
825
V
= 0V
,
V =
0V to 533V
DS
GS
5
C
o(er)
410
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
570
95
V
= 0 to 10V
,
I =
43A,
GS
D
nC
ns
V
= 400V
DS
290
100
145
435
125
Resistive Switching
V =
533V
,
I =
43A
DD
t
r
t
d(off)
t
f
D
R
= 2.2
Ω
6
,
V
= 15V
GG
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
57
A
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
325
I
= 43A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
470
960
V
SD
J
GS
T =
25°C
J
405
800
2.95
8.86
14
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T =
125°C
J
3
I
= 43A
T =
25°C
J
SD
Q
rr
μ
C
A
di
SD
/
dt = 100A/
μ
s
= 100V
T =
125°C
J
V
T =
25°C
J
DD
I
rrm
T =
125°C
J
21
I
≤
43A, di/dt
≤
1000A/
μ
s, V
= 400V,
SD
DD
dv/dt
V/ns
20
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 4.03mH, R
G
= 25
Ω
, I
AS
= 43A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
T
o
c
alculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= 5.57E-8/V
DS
^2 + 7.15E-8/V
DS
+ 2.75E-10.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT53F80J
100
80
200
180
160
140
120
100
80
V
= 10V
T
= 125°C
GS
J
V
GS
= 6V, 6.5V, 10 & 15V
T
J
= -55°C
5.5V
60
T
J
= 25°C
40
5V
60
20
0
40
T
J
= 150°C
4.5V
4V
20
0
T
J
= 125°C
0
V
5
10
15
20
25
30
0
0
0
5
10
15
20
25
30
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
3.0
2.5
2.0
1.5
1.0
350
300
250
200
150
100
NORMALIZED TO
= 10V
43A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
@
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0.5
0
50
0
-55 -25
0
25 50 75
100 125 150
T , JUNCTION
TEMPERATURE (°C)
1
2
3
4
5
6
7
8
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
100
90
80
70
60
50
40
30
20
30,000
10,000
C
iss
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
1,000
C
oss
100
10
C
rss
10
0
0
10
20
30
40
50
60
70
200
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
400
600
800
I ,
DRAIN CURRENT (A)
V
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
350
I
= 43A
D
300
250
200
150
100
V
DS
=
160V
V
DS
=
400V
T
J
= 25°C
T
J
= 150°C
6
V
DS
=
640V
4
50
0
2
0
0
100 200 300 400 500 600 700 800
0
0.3
0.6
0.9
1.2
1.5
Q ,
TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT53F80J
400
100
400
100
I
I
DM
DM
R
ds(on)
13
μ
s
13
μ
s
100
μ
s
1ms
10ms
10
1
10
1
100
μ
s
1ms
10ms
100ms
DC line
R
ds(on)
T
=
150°C
J
T
C
=
25°C
100ms
DC line
Scaling for Different Case & Junction
T
e
mperatures:
T
=
125°C
C
=
75°C
J
T
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
J
C
0.1
0.1
1
10
100
1000
1
10
100
1000
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
= Pulse Duration
1
t
1
0.1
t
2
Duty Factor D =
/
SINGLE PULSE
Peak T
= P
x Z
+ T
θJC C
J
DM
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M
4
(4 places
)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drai n
30.1 (1.185)
30.3 (1.193)
*
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
