Microchip-Tech-APT56F50B2
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APT56F50B2
APT56F50L
500V, 56A, 0.10
Ω
Max, t
≤
280ns
rr
N-Channel FREDFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFE
T
.
T-Max
®
TO-264
This ‘FREDFET’ version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
, soft
rr
recovery, and high recovery dv/dt capability.
Low gate charge, high gain, and a greatly
reduced ratio of C
/C result
in excellent noise immunity and low switching loss.
The
rss iss
APT56F50B2
APT56F50L
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS
phase shifted and other full bridge
• Fast
switching with low EMI
• Half
bridge
• Low
t for
high reliability
rr
• PFC
and other boost converter
• Buck
converter
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Single
and two switch forward
• Flyback
• Avalanche
energy rated
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
56
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
35
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
175
±30
1200
28
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
780
Unit
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
W
R
θ
JC
0.16
Junction to Case Thermal Resistance
°C/W
°C
R
θ
CS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
T
J
,T
STG
-55
150
300
Operating and Storage Junction
T
e
mperature Range
T
L
Soldering
T
e
mperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
W
T
Package Weight
in·lbf
N·m
10
T
o
rque
Mounting
T
o
rque ( TO-264 Package), 4-40 or M3 screw
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT56F50B2_L
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage
T
e
mperature Coef
fi
cient
500
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.60
0.085
4
V
= 10V
,
I =
28A
D
R
DS(on)
V
GS(th)
0.10
5
GS
V
2.5
V
= V
DS
,
I =
2.5mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 500V
= 0V
T =
25°C
J
250
1000
±100
DS
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
T =
125°C
J
GS
V
= ±30V
nA
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
Parameter
Test Conditions
Min
Typ
43
Max
Unit
g
fs
V
= 50V
,
I =
28A
S
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
8800
120
945
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
550
275
V
= 0V
,
V =
0V to 333V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
220
50
V
= 0 to 10V
,
I =
28A,
GS
D
nC
ns
V
= 250V
DS
100
38
Resistive Switching
V =
333V
,
I =
28A
DD
t
r
t
d(off)
t
f
45
D
R
= 4.7
Ω
6
,
V
= 15V
GG
100
33
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
S
38
A
Pulsed Source Current
(Body Diode)
1
I
SM
V
SD
t
rr
175
I
= 28A
,
T =
25°C, V
= 0V
Diode Forward Voltage
1.
2
280
520
V
SD
J
GS
T =
25°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T =
125°C
J
3
I
= 28A
T =
25°C
J
1.20
3.07
10.1
14.5
SD
Q
rr
μ
C
A
di
SD
/
dt = 100A/
μ
s
= 100V
T =
125°C
J
V
T =
25°C
J
DD
I
rrm
T =
125°C
J
I
≤
28A, di/dt
≤
1000A/
μ
s, V
= 333V,
SD
DD
dv/dt
V/ns
20
T =
125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 3.06mH, R
G
= 25
Ω
, I
AS
= 28A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
T
o
c
alculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -2.04E-7/V
DS
^2 + 4.76E-8/V
DS
+ 1.36E-10.
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT56F50B2_L
100
90
80
70
60
50
40
30
20
200
160
120
80
V
= 10V
T
= 125°C
V
GS
= 7 & 10V
GS
J
T
J
= -55°C
6.5V
6V
T
J
= 25°C
5.5V
5V
40
0
T
J
= 150°C
10
0
T
J
= 125°C
10
0
5
15
20
25
0
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
2.5
2.0
1.5
1.0
175
150
125
100
75
NORMALIZED TO
= 10V
28A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
@
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
50
0.5
0
25
0
-55 -25
0
25 50 75
100 125 150
2
4
, GATE-TO-SOURCE VOLTAGE (V)
GS
6
8
10
T , JUNCTION
TEMPERATURE (°C)
V
J
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
70
60
50
40
30
20
10
0
20,000
10,000
C
iss
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
1000
C
oss
100
10
C
rss
0
10
20
30
40
50
100
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
I ,
DRAIN CURRENT (A)
V
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
175
16
14
12
10
8
I
= 28A
D
150
125
100
75
V
DS
=
100V
V
DS
=
250V
T
J
= 25°C
6
T
J
= 150°C
V
DS
=
400V
50
4
25
0
2
0
0
50 100 150
200 250 300
350
0
0.2 0.4
V ,
SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6 0.8
1.0 1.2 1.4
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT56F50B2_L
250
100
250
100
I
I
DM
DM
13
μ
s
100
μ
s
1ms
10ms
100ms
DC line
13
μ
s
10
1
10
100
μ
s
1ms
R
R
ds(on)
J
=
150°C
C
=
25°C
ds(on)
10ms
T
100ms
1
T
DC line
Scaling for Different Case & Junction
T
e
mperatures:
T
J
=
125°C
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
600
1
10
100
600
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
D = 0.9
0.7
0.5
0.3
Note:
t
1
t
2
SINGLE PULSE
0.1
0.05
t
= Pulse Duration
t
1
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
x Z
J
DM
θJC C
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
®
TO-264 (L) Package Outline
T-MAX (B2)
Package Outline
e3 100% Sn Plated
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
19.81 (.780)
20.32 (.800)
1.016(.040)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drai n
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
