Microchip-Tech-APT56M50L
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APT56M50B2
APT56M50L
500V, 56A, 0.10
Ω
Max
N-Channel MOSFET
T-Ma
x
TM
TO-264
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power
MOSFE
T
. A
p
roprietary planar stripe design yields excellent reliability and manu-
facturability. Low
switching loss is achieved with low input capacitance and ultra
low C
rss
“Miller” capacitance.
The intrinsic gate resistance and capacitance of
the poly-silicon gate structure help control slew rates during switching, resulting
in low EMI and reliable paralleling, even when switching at very high frequency.
Reliability in
fl
yback, boost, forward, and other circuits is enhanced by the high
avalanche energy capability.
APT56M50B2
APT56M50L
D
S
Single die MOSFET
G
FEATURES
TYPICAL APPLICATIONS
• PFC
and other boost converter
• Fast
switching with low EMI/RFI
• Buck
converter
• Low
R
DS(on)
• Two
switch forward (asymmetrical bridge)
• Single
switch forward
• Flyback
• Ultra
low C
rss
for improved noise immunity
• Low
gate charge
• Avalanche
energy rated
• RoHS
compliant
• Inverters
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
56
Continuous Drain Current @ T
C
= 25°C
I
D
Continuous Drain Current @ T
C
= 100°C
35
A
Pulsed Drain Current
1
I
DM
V
GS
E
AS
I
AR
175
±30
1200
28
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
-55
Typ
Max
780
Unit
W
P
D
Total Power Dissipation @ T
C
= 25°C
R
θ
JC
0.16
Junction to Case Thermal Resistance
°C/W
°C
R
θ
CS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
T
J
,T
STG
150
300
Operating and Storage Junction Temperature Range
T
L
Soldering Temperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
W
T
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
1.1
Static Characteristics
T =
25°C unless otherwise speci
fi
ed
J
APT56M50B2_L
Parameter
Test Conditions
Min
500
Typ
Max
Unit
V
Symbol
V
BR(DSS)
V
= 0V
,
I =
250
μ
A
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coef
fi
cient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coef
fi
cient
GS
D
∆
V
BR(DSS)
/
∆
T
J
Reference to 25°C, I
= 250
μ
A
D
V/°C
Ω
0.60
0.085
4
V
= 10V
,
I =
28A
D
R
DS(on)
V
GS(th)
0.10
5
GS
V
3
V
= V
DS
,
I =
2.5mA
D
GS
∆
V
GS(th)
/
∆
T
J
mV/°C
-10
V
= 500V
= 0V
T
T
= 25°C
100
500
DS
J
J
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
μ
A
V
= 125°C
GS
V
= ±30V
nA
±100
GS
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
g
fs
Parameter
Test Conditions
Min
Typ
43
Max
Unit
S
V
= 50V
,
I =
28A
Forward Transconductance
Input Capacitance
DS
D
C
iss
C
rss
C
oss
8800
120
945
V
= 0V
,
V =
25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
pF
4
C
o(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
550
275
V
= 0V
,
V =
0V to 333V
DS
GS
5
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
220
50
V
= 0 to 10V
,
I =
28A,
GS
D
nC
ns
V
= 250V
DS
100
38
Resistive Switching
V =
333V
,
I =
28A
DD
t
r
t
d(off)
t
f
45
D
R
= 4.7
Ω
6
,
V
= 15V
GG
100
33
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
56
Unit
A
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
I
S
integral reverse p-n
junction diode
(body diode)
G
Pulsed Source Current
(Body Diode)
1
I
SM
175
1
V
SD
t
rr
I
= 28A
,
T =
25°C, V
= 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
J
GS
3
I
= 28A
660
ns
μ
C
SD
Q
rr
di
SD
/
dt = 100A/
μ
s, T
= 25°C
J
13.2
I
≤
28A, di/dt
≤
1000A/
μ
s, V
= 333V,
DD
SD
V/ns
dv/dt
Peak Recovery dv/dt
8
T
= 125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at T
J
= 25°C, L = 3.06mH, R
G
= 4.7
Ω
, I
AS
= 28A.
Pulse test: Pulse Width < 380
μ
s, duty cycle
< 2%.
4
5
C
o(cr)
is de
fi
ned as a
fi
xed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
C
o(er)
is de
fi
ned as a
fi
xed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To
calculate C
o(er)
for any
V
DS
less than V
(BR)DSS,
use this equation:
C
o(er)
= -2.04E-7/V
DS
^2 + 4.76E-8/V
DS
+ 1.36E-10.
value of
6
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
APT56M50B2_L
100
90
80
70
60
50
40
30
20
200
160
120
80
V
= 10V
T
= 125°C
GS
J
T
J
= -55°C
V
GS
= 7,8 & 10V
6V
T
J
= 25°C
40
0
5V
T
J
= 150°C
4.5V
10
0
T
J
= 125°C
10
0
5
15
20
25
0
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1,
Output Characteristics
Figure 2,
Output Characteristics
2.5
2.0
1.5
1.0
175
150
125
100
75
NORMALIZED TO
= 10V
28A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250
μ
SEC. PULSE TEST
V
@
GS
@ <0.5 % DUTY CYCLE
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
50
0.5
0
25
0
-55 -25
0
25 50 75
100 125 150
2
4
, GATE-TO-SOURCE VOLTAGE (V)
GS
6
8
10
T , JUNCTION
TEMPERATURE (°C)
V
J
Figure 3,
R
vs Junction Temperature
Figure 4,
Transfer Characteristics
DS(ON)
70
60
50
40
30
20
10
0
20,000
10,000
C
iss
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
1000
C
oss
100
10
C
rss
0
10
20
30
40
50
100
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
200
300
400
500
I ,
DRAIN CURRENT (A)
V
D
Figure 5,
Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
175
16
14
12
10
8
I
= 28A
D
150
125
100
75
V
DS
=
100V
V
DS
=
250V
T
J
= 25°C
6
T
J
= 150°C
V
DS
=
400V
50
4
25
0
2
0
0
50 100 150
200 250 300
350
0
0.2 0.4
V ,
SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.6 0.8
1.0 1.2 1.4
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT56M50B2_L
250
100
250
100
I
I
DM
DM
13
μ
s
100
μ
s
1ms
10ms
100ms
DC line
13
μ
s
10
1
10
100
μ
s
1ms
R
R
ds(on)
J
=
150°C
C
=
25°C
ds(on)
10ms
T
100ms
1
T
DC line
Scaling for Different Case & Junc-
tion Temperatures:
T
J
=
125°C
I
D
=
I
D(T =
25
°
C)
*(
T
–
T
C
)/125
T
C
=
75°C
J
C
0.1
0.1
1
10
100
600
1
10
100
600
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
D = 0.9
0.7
0.5
0.3
Note:
t
1
t
2
SINGLE PULSE
0.1
0.05
t
= Pulse Duration
t
1
1
t
/
2
+ T
Duty Factor D =
Peak T
= P
x Z
J
DM
θJC C
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
e3 100%
Sn Plated
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Dra
i
n
Source
Gate
1.01 (.040)
1.40 (.055)
Drai
n
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
