Microchip-Tech-APT58M50JU3
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APT58M50JU3
V
DSS
= 500V
ISOTOP
®
Buck chopper
MOSFET Power Module
R
DSon
= 65m
Max @ Tj = 25°C
I
D
= 58A @ Tc = 25°C
Application
D
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 8™ MOSFETs
G
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
S
ISOTOP
®
Package (SOT-227)
Very low stray inductance
High level of integration
A
Benefits
Outstanding performance at high frequency
operation
A
S
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
D
G
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
DSS
Drain – Source Breakdown Voltage
500
58
43
V
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
270
±30
65
543
42
V
m
W
P
D
Maximum Power Dissipation
T
c
= 25°C
I
AR
Avalanche current (repetitive and non repetitive)
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
1 – 6
APT58M50JU3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
T
j
= 25°C
250
V
DS
= 500V
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V
T
j
= 125°C
1000
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
V
GS
= 10V, I
D
= 42A
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
= ±30 V
65
5
m
V
3
4
I
GSS
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
10800
1164
148
Max Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
pF
f = 1MHz
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
340
75
V
GS
= 10V
V
Bus
= 250V
I
D
= 42A
nC
ns
155
60
Resistive switching @ 25°C
V
GS
= 15V
70
V
Bus
= 333V
T
d(off)
Turn-off Delay Time
T
f
Fall Time
155
50
I
D
= 42A
R
G
= 2.2
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
I
RM
I
F
600
V
µA
A
T
j
= 25°C
T
j
= 125°C
Tc = 90°C
25
500
V
R
=600V
30
1.8
2.2
1.5
I
F
= 30A
I
F
= 60A
I
F
= 30A
2.2
V
F
Diode Forward Voltage
V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
25
160
35
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
Q
rr
nC
480
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Mosfet
Diode
0.23
1.05
20
R
thJC
Junction to Case Thermal Resistance
°C/W
R
thJA
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
T
J
,T
STG
Storage Temperature Range
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec
V
ISOL
2500
-40
V
150
300
1.5
°C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
2 – 6
APT58M50JU3
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
Maxi
m
um
E
f
fective Transient Thermal Impedance, Junction to Case vs Pulse
D
u
ration
0.25
0.9
0.2
0.15
0.1
0.7
0.5
0.3
0.05
0.1
Single
P
u
lse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse
D
u
ration (Seconds)
3 – 6
APT58M50JU3
Low Voltage Output Characteristics
Low Voltage Output Characteristics
160
140
120
100
80
250
200
150
100
50
V
GS
=7,8 &10V
6.5V
V
GS
=10V
T
J
=25°C
6V
5.5V
60
T
J
=125°C
40
20
T
J
=125°C
0
0
0
5
10
15
20
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Transfert Characteristics
Normalized R
DSon
vs. Temperature
125
2.5
2
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=10V
I
D
=42A
250µs pulse test @ < 0.5 duty cycle
100
75
50
25
0
T
J
=125°C
1.5
1
T
J
=25°C
6
0.5
25
50
75
100
125
150
0
1
2
3
4
5
7
T
J
, Junction Temperature (°C)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
12
10
8
V
DS
=100V
V
DS
=250V
I
D
=42A
T
J
=25°C
Ciss
V
DS
=400V
6
Coss
Crss
4
2
10
0
0
50
100
150
200
0
60
120
180
240
300
360
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
4 – 6
APT58M50JU3
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
0.7
0.5
0.8
0.6
0.4
0.2
0.3
Single Pulse
0.01
0.1
0.05
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration
(Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
150
125
100
75
120
100
80
60
40
20
0
T
J
=125°C
V
R
=400V
T
J
=125°C
60 A
30 A
15 A
T
J
=25°C
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
200 400 600 800
1000 1200
-di
F
/dt (A/µs)
V
F
, Anode to Cathode Voltage (V)
Q
RR
vs. Current Rate Charge
I
RRM
vs. Current Rate of Charge
1.5
1.0
0.5
0.0
30
25
20
15
10
5
T
J
=125°C
V
R
=400V
T
J
=125°C
V
R
=400V
60 A
60 A
30 A
30 A
15 A
15 A
0
0
200 400 600 800
1000 1200
0
200 400 600 800
1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
200
175
150
125
100
75
Duty Cycle = 0.5
T
J
=175°C
40
30
20
10
0
50
25
0
1
10
100
1000
25
50
75
100
125
150
175
V
R
, Reverse Voltage (V)
Case Temperature (°C)
ISOTOP® is a registered trademark of ST Microelectronics NV
5 – 6
APT58M50JU3
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
Life Support Application
Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
6 – 6
