Microchip-Tech-APT60M75JLL

APT60M75JLL  

600V 58A 0.075

Ω  

R

POWER MOS 7

 

MOSFET  

S

S

Power MOS 7

®

is a new generation of low loss, high voltage, N-Channel  

enhancement mode power MOSFETS.

 

Both conduction and switching  

losses are addressed with Power MOS 7

®

by significantly lowering R

DS(ON)  

and Q

g

. Power

 

MOS 7

®

combines lower conduction and switching losses  

along with exceptionally fast switching speeds inherent with APT’s  

patented metal gate structure.  

D

G

SOT-227  

“UL Recognized”  

ISOTOP

®  

D

S

• Lower Input Capacitance  

• Lower Miller Capacitance  

• Lower Gate Charge, Qg  

• Increased Power Dissipation  

• Easier To Drive  

G

• Popular SOT-227 Package  

MAXIMUM RATINGS  

All Ratings:

 

T =

 

25°C unless otherwise specified.  

C

APT60M75JLL  

UNIT  

Symbol  

V

DSS  

I

D  

Parameter  

Volts  

Drain-Source Voltage  

600  

Continuous Drain Current @ T

C

= 25°C  

58  

232  

Amps  

Volts  

1

I

D

M  

Pulsed Drain Current  

V

GS  

Gate-Source Voltage Continuous  

Gate-Source Voltage Transient  

Total Power Dissipation @ T

C

= 25°C  

Linear Derating Factor  

±30  

V

GSM  

±40  

Watts  

W/°C  

595  

P

D  

4.76  

T

J

,T

STG  

T

L  

Operating and Storage Junction Temperature Range  

-55 to 150  

°C  

Amps  

mJ  

Lead Temperature: 0.063″ from Case for 10 Sec.  

300  

58  

1

I

AR  

Avalanche Current  

(Repetitive and Non-Repetitive)  

1

E

AR  

E

AS  

Repetitive Avalanche Energy  

Single Pulse Avalanche Energy  

50  

4

3200  

STATI

C

E

LECTRICA

L

C

HARACTERISTICS  

Symbol Characteristic

 

/ Test Conditions  

UNIT  

Volts  

MIN  

TYP  

MAX  

BV

DSS  

R

DS(on)  

Drain-Source Breakdown Voltage

 

(V

GS

= 0V, I

D

= 250µA)  

600  

2

Drain-Source On-State Resistance  

(V

GS

= 10V, I

D

= 29A)  

0.075

Ohms  

Zero Gate Voltage Drain Current

 

(V

DS

= 600V, V

GS

= 0V)  

Zero Gate Voltage Drain Current

 

(V

DS

= 480V, V

GS

= 0V, T

C

= 125°C)  

Gate-Source Leakage Current

 

(V

GS

= ±30V, V

DS

= 0V)  

Gate Threshold Voltage

 

(V

DS

= V

GS

, I

D

= 5mA)  

100  

µA  

500  

I

DSS  

I

GSS  

nA  

±100  

5

V

GS(th)  

Volts  

3

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  

DYNAMIC CHARACTERISTICS  

Symbol Characteristic  

APT60M75JLL  

Tes

t

C

onditions  

MIN  

TYP  

MAX  

UNIT  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

8930  

1130  

50  

V

= 0V  

GS  

Output Capacitance  

V

= 25V  

pF  

DS  

f = 1 MHz  

Reverse Transfer Capacitance  

3

Total Gate Charge  

V

= 10V  

195  

48  

GS  

V

= 300V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

DD  

Gate-Source Charge  

Gate-Drain (“Mille

r

“

) Charge  

Turn-on Delay Time  

Rise Time  

nC  

ns  

I

= 58A @ 25°C  

D

100  

23  

RESISTIV

E

S

WITCHING  

V

= 15V  

GS  

15  

V

= 300V  

DD  

I

= 58A @ 25°C  

D

t

d(off)  

55  

Turn-off Delay Time  

Fall Time  

R

= 0.6

Ω  

G

t

f  

10  

INDUCTIV

E

S

WITCHIN

G

@

2

5°C  

6

E

on  

E

off  

E

on  

E

off  

Turn-on Switching Energy  

1205  

1385  

1865  

1550  

V

= 400V,

 

V =

 

15V  

GS  

DD  

I

= 58A, R

 

= 5

Ω  

Turn-off Switching Energy  

D

G

µ

J  

INDUCTIV

E

S

WITCHIN

G

@

1

25°C  

6

Turn-on Switching Energy  

V

= 400V V

 

= 15V  

GS  

DD  

I

= 58A, R

 

= 5

Ω  

Turn-off Switching Energy  

D

G

SOURCE-DRAI

N

D

IOD

E

R

ATING

S

A

N

D

C

HARACTERISTICS  

Symbol  

Characteristic / Test Conditions  

UNIT  

MIN  

TYP  

MAX  

58  

I

S  

Continuous Source Current

 

(Body Diode)  

Amps  

1

I

SM  

232  

1.3  

Pulsed Source Current  

Diode Forward Voltage  

(Body Diode)  

2

V

SD  

t

rr  

(V

GS

= 0V, I

S

= –

58A

)  

Volts  

ns  

Reverse Recovery Time

 

(I

S

= –

58A

, dl

S

/dt = 100A/µs)  

Reverse Recovery Charge

 

(I

S

= –

58A

, dl

S

/dt = 100A/µs)  

857  

26  

Q

r

r  

µC  

dv  

/

dv  

5

V/ns  

Peak Diode Recovery  

/

dt  

8

dt  

THERMA

L

C

HARACTERISTICS  

Symbol  

R

θ

JC  

UNIT  

Characteristic  

MIN  

TYP  

MAX  

0.21  

40  

Junction to Case  

Junction to Ambient  

°C/W  

R

θ

JA  

1 Repetitive

 

Rating: Pulse width limited by maximum junction  

temperature  

2 Pulse

 

Test: Pulse width < 380 µs, Duty Cycle < 2%  

3 See

 

MIL-STD-750 Method 3471  

4 Starting

 

T = +25°C, L = 1.90mH, R

 

= 25

Ω

, Peak I

 

= 58A  

j

G

L

dv  

5

/

numbers reflect the limitations of the test circuit rather than the  

di  

dt  

device itself.  

I

≤

–

I

58A  

/

≤

700A/µs  

V

dt  

S

D

J

6 Eon

 

includes diode reverse recovery.

 

See figures 18, 20.  

AP

T

R

eserve

s

t

h

e

r

igh

t

t

o

c

hange

,

w

ithou

t

n

otice

,

t

h

e

s

pecification

s

a

n

d

i

nforatio

n

c

ontaine

d

h

erein.  

0.25  

0.20  

0.15  

0.10  

0.05  

0

0.9  

0.7  

0.5  

0.3  

Note:  

t

1

t

2

t

1

Duty Factor

 

D =  

Peak T

 

= P

 

x Z  

/

t

2

+ T  

0.1  

0.05  

J

DM

θ

JC  

C

SINGL

E

P

ULSE  

10

-3  

10

-5  

10

-4  

10

-2  

10

-1  

1.0  

10  

RECTANGULA

R

P

ULS

E

D

URATIO

N

(

SECONDS)  

FIGUR

E

1

,

M

AXIMU

M

E

FFECTIV

E

T

RANSIEN

T

T

HERMA

L

I

MPEDANCE

,

J

UNCTION-TO-CAS

E

v

s

P

ULS

E

D

URATION  

Typical Performance Curves  

APT60M75JLL  

200  

180  

160  

140  

120  

100  

80  

V

=15 &10V  

GS  

8V  

7.5V  

RC MODEL  

Junction  

temp. (

°

C)  

7V  

0.0492  

0.142  

0.0273F  

0.469F  

44.2F  

6.5  

Power  

(watts)  

6V  

25  

60  

0.0189  

40  

5.5V  

20  

0

Case temperature. (

°

C)  

0

5

10  

15  

20  

30  

V

,

D

RAIN-TO-SOURC

E

V

OLTAG

E

(

VOLTS)  

DS  

FIGUR

E

2

, TRANSIENT THERMAL IMPEDANCE MODEL  

FIGUR

E

3

,

L

OW VOLTAGE OUTPU

T

C

HARACTERISTICS  

180  

1.40  

NORMALIZED TO  

V

> I

 

(ON) x  

R

MAX.  

DS(ON)  

DS  

D

V

= 10V  

@

I

= 29A  

160  

140  

120  

100  

80  

250µSEC. PULSE TEST  

@ <0.5 % DUTY CYCLE  

GS  

D

1.30  

1.20  

1.10  

1.00  

V

=10V  

T

= -55°C  

GS  

J

60  

V

=20V  

T

= +25°C  

GS  

J

40  

T

= +125°C  

J

0.90  

0.80  

20  

0

0

1

2

3

4

5

6

7

8

9

0

20  

40  

60  

80  

100 120 140  

V

,

G

ATE-TO-SOURC

E

V

OLTAG

E

(

VOLTS)  

I

,

D

RAI

N

C

URREN

T

(

AMPERES)  

GS  

D

FIGUR

E

4

, TRANSFE

R

C

HARACTERISTICS  

FIGUR

E

5

,

R  

v

s

D

RAI

N

C

URRENT  

DS(ON)  

1.15  

1.10  

1.05  

1.00  

60  

50  

40  

30  

20  

0.95  

0.90  

10  

0

25  

50  

75  

100  

125  

150  

-50 -25  

0

25  

50 75 100

 

125 150  

T

,

C

AS

E

T

EMPERATUR

E

(

°C)  

T

,

J

UNCTIO

N

T

EMPERATUR

E

(

°C)  

C

J

FIGUR

E

6

,

M

AXIMU

M

D

RAI

N

C

URREN

T

v

s

C

AS

E

T

EMPERATURE  

FIGUR

E

7

,

B

REAKDOW

N

V

OLTAG

E

v

s

T

EMPERATURE  

2.5  

1.2  

I

= 29A  

= 10V  

D

V

GS  

1.1  

1.0  

0.9  

0.8  

2.0  

1.5  

1.0  

0.5  

0.0  

0.7  

0.6  

-50 -25  

0

25 50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100 125 150  

T

,

J

UNCTIO

N

T

EMPERATUR

E

(

°C)  

T

,

C

AS

E

T

EMPERATUR

E

(

°C)  

J

C

FIGUR

E

8

, R  

vs. TEMPERATURE  

FIGUR

E

9

,

T

HRESHOL

D

V

OLTAG

E

v

s

T

EMPERATURE  

DS(ON)  

APT60M75JLL  

232  

20,000  

10,000  

OPERATIO

N

H

ERE  

LIMITE

D

B

Y

R

(

ON)  

DS  

C

iss  

100  

50  

100µS  

C

oss  

1,000  

10  

1mS  

100  

10  

C

rss  

10mS  

T

=+25°C  

C

T =+150°C  

J

SINGL

E

P

ULSE  

10  

1

16  

12  

8

1

100  

600  

0

V

10  

20  

30  

40  

50  

V

,

D

RAIN-TO-SOURC

E

V

OLTAG

E

(

VOLTS)  

,

D

RAIN-TO-SOURC

E

V

OLTAG

E

(

VOLTS)  

DS  

DS  

FIGUR

E

1

0

,

M

AXIMU

M

S

AF

E

O

PERATIN

G

A

REA  

FIGUR

E

1

1, CAPACITANC

E

v

s

D

RAIN-TO-SOURC

E

V

OLTAGE  

200  

I

= 58A  

D

100  

T =+150°C  

J

V

=

1

20V  

DS  

T =+25°C  

J

V

=

3

00V  

DS  

V

=

4

80V  

DS  

10  

4

0

1

0

50  

100  

150  

200  

250  

300  

0.3  

V

0.5  

0.7  

0.9  

1.1  

1.3  

1.5  

Q

,

T

OTA

L

G

AT

E

C

HARG

E

(

nC)  

,

S

OURCE-TO-DRAI

N

V

OLTAG

E

(

VOLTS)  

g

SD  

FIGUR

E

1

2

,

G

AT

E

C

HARG

E

v

s

G

ATE-TO-SOURC

E

V

OLTAGE  

FIGUR

E

1

3, SOURCE-DRAI

N

D

IOD

E

F

ORWAR

D

V

OLTAGE  

160  

180  

V

= 400V  

DD  

= 5

Ω  

R

T

160  

140  

120  

100  

80  

G

140  

t

= 125°C  

d(off)  

J

L = 100µH  

120  

V

= 400V  

DD  

= 5

Ω  

100  

80  

R

T

t

G

f

= 125°C  

J

L = 100µH  

t

r

60  

60  

40  

40  

t

d(on)  

20  

0

20  

0

10  

30  

50  

70  

(A)  

90  

110  

130  

10  

30  

50  

70  

(A)  

90  

110  

130  

I

I

D

D

FIGURE 14,

 

DELAY TIMES vs CURRENT  

FIGURE 15, RISE

 

AND FALL TIMES vs CURRENT  

5000  

4000  

3000  

2000  

6000  

5000  

4000  

3000  

2000  

V

= 400V  

V

I

= 400V  

DD  

= 5

Ω  

DD  

= 58A  

R

T

G

D

= 125°C  

T

= 125°C  

J

J

E

off  

L = 100µH  

L = 100µH  

E

ON

includes  

E

ON

includes  

diode reverse recovery  

diode reverse recovery  

E

off  

E

on  

E

on  

1000  

0

1000  

0

10  

30  

50  

70  

(A)  

90  

110  

130  

0

5

10 15 20 25 30

 

35 40

 

45 50  

I

D

R

,

G

AT

E

R

ESISTANC

E

(

Ohms)  

G

FIGUR

E

1

6, SWITCHING ENERG

Y

v

s CURRENT  

FIGURE 17, SWITCHING

 

ENERGY VS. GATE RESISTANCE  

APT60M75JLL  

90%  

Gat

e

V

oltage  

Drai

n

C

urrent  

10%  

T 125°C  

T 125°C  

J

J

Gat

e

V

oltage  

Drai

n

V

oltage  

t

d(off)  

t

d(on)  

90%  

t

f  

90%  

t

r  

10%  

10%  

5%  

5%  

0

Drai

n

V

oltage  

Drai

n

C

urrent  

Switchin

g

E

nergy  

Switchin

g

E

nergy  

Figur

e

1

8

,

T

urn-o

n

S

witchin

g

W

aveform

s

a

n

d

D

efinitions  

Figur

e

1

9

,

T

urn-of

f

S

witchin

g

W

aveform

s

a

n

d

D

efinitions  

APT60DF60  

V

DS  

I

D  

V

DD  

G

D.U.T.  

Figure 20, Inductive Switching Test Circuit  

SOT-22

7

(

ISOTOP

®

)

P

ackag

e

O

utline  

11.8 (.463)  

12.2 (.480)  

31.5 (1.240)  

31.7 (1.248)  

8.9 (.350)  

9.6 (.378)  

W=4.1 (.161)  

W=4.3 (.169)  

H=4.8 (.187)  

H=4.9 (.193)  

(4 places)  

7.8 (.307)  

8.2 (.322)  

Hex Nut M4  

(4 places)  

25.2 (0.992)  

25.4 (1.000)  

r = 4.0 (.157)  

(2 places)  

4.0 (.157)  

4.2 (.165)  

(2 places)  

0.75 (.030)

 

12.6 (.496)  

0.85 (.033)

 

12.8 (.504)  

3.3 (.129)  

3.6 (.143)  

1.95 (.077)  

2.14 (.084)  

14.9 (.587)  

15.1 (.594)  

* Source  

Drain  

30.1 (1.185)  

30.3 (1.193)  

* Source terminals are shorted  

internally. Current handling  

capability is equal for either  

Source terminal.  

38.0 (1.496)  

38.2 (1.504)  

* Source  

Dimensions in Millimeters and (Inches)  

Gate  

ISOTOP

®

i

s

a

R

egistere

d

T

rademar

k

o

f

S

G

S

T

homson. APT’

s

p

roduct

s

a

r

e

c

overe

d

b

y

o

n

e

o

r

m

or

e

o

f

U

.S.patent

s

4

,895,810

 

5,045,903 5,089,434 5,182,234 5,019,522  

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05

8

a

n

d

f

oreig

n

p

atents. U

S

a

n

d

F

oreig

n

p

atent

s

p

ending. Al

l

R

ight

s

R

eserved.