Microchip-Tech-APT60M80L2VRG
| Part # | Microchip-Tech-APT60M80L2VRG |
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APT60M80L2VR
600V 65A 0.080
Ω
POWER MOS V
®
MOSFET
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
L2VR
TO-264
Max
• TO-264
MAX
Package
• Faste
r
S
witching
• Lowe
r
L
eakage
• Avalanche Energy Rated
D
S
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT60M80L2VR
UNIT
V
DSS
I
D
Drain-Source Voltage
600
65
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
260
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
833
P
D
6.67
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
65
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
600
2
Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 32.5A)
0.080
25
Zero Gate Voltage Drain Current
(V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5mA)
I
DSS
µA
250
±100
4
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT60M80L2VR
Tes
t
C
onditions
UNIT
MIN
TYP
MAX
C
iss
C
oss
C
rss
Q
g
Input Capacitance
13300
1610
700
590
50
V
= 0V
GS
Output Capacitance
pF
V
= 25V
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 300V
Q
gs
Q
gd
t
d(on)
t
r
DD
nC
ns
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
I
= 65A @ 25°C
D
310
14
RESISTIV
E
S
WITCHING
V
= 15V
GS
24
V
= 300V
DD
I
= 65A @ 25°C
t
d(off)
70
Turn-off Delay Time
Fall Time
D
R
= 0.6
Ω
G
t
f
31
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
1880
2830
3100
3345
V
= 400V,
V =
15V
GS
DD
I
= 65A, R
= 5
Ω
Turn-off Switching Energy
D
G
µ
J
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
6
Turn-on Switching Energy
V
= 400V, V
= 15V
GS
DD
I
= 65A, R
= 5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
I
S
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
65
260
1.3
Continuous Source Current
(Body Diode)
Amps
1
I
SM
Pulsed Source Current
(Body Diode)
2
V
SD
t
rr
Diode Forward Voltage
(V
GS
= 0V, I
S
= -I
D
65A
)
Volts
ns
Reverse Recovery Time
(I
S
= -I
D
65A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
65A
, dl
S
/dt = 100A/µs)
937
29
Q
rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
8
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.15
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
4 Starting
T =
+25°C, L = 1.51mH, R
= 25
Ω
, Peak I
= 65A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤
–
I
65A
/
≤
700A/µs
V
R
≤
600V
T
≤
150
°
C
dt
S
D
J
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
SINGL
E
P
ULSE
0.02
0
0.1
2
+ T
J
DM
θ
JC
C
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
Typical Performance Curves
APT60M80L2VR
180
160
140
120
100
80
6.5V
6V
15 &10V
RC MODEL
0.0456
Junction
temp. (
°
C)
5.5V
0.0272F
0.493F
Power
(watts)
60
5V
40
0.104
4.5V
4V
30
20
0
Case temperature. (
°
C)
0
5
10
15
20
25
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
1.4
200
NORMALIZED TO
V
> I
(ON) x
25
0
µ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I =
32.5A
180
160
140
120
100
80
GS
D
1.3
1.2
1.1
1.0
V
=10V
GS
V
=20V
GS
60
T
= +125°C
J
40
0.9
0.8
T
= -55°C
7
J
20
0
T
= +25°C
3
J
0
1
2
4
5
6
8
0
20
40
60
80 100
120 140 160
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
70
60
50
40
30
20
1.00
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
C
J
2.5
1.2
I
= 32.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT60M80L2VR
260
100
50,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
C
iss
10,000
5000
100µS
C
oss
10
1000
500
1mS
C
rss
10mS
T
=+25°C
C
J
T =+150°C
SINGL
E
P
ULSE
10
1
100
1
100
600
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1,CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
16
200
I
= 65A
D
100
12
8
T =+150°C
J
T =+25°C
J
V
=120V
DS
V
=300V
DS
10
V
=480V
DS
4
0
1
0.3
V
0
100 200 300 400 500 600 700 800
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
0.5
0.7
0.9
1.1
1.3
1.5
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
FIGUR
E
1
3
,
S
OURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
600
200
V
= 400V
DD
= 5
Ω
R
T
G
500
= 125°C
t
J
d(off)
L = 100µH
150
100
t
V
= 400V
400
300
200
f
DD
= 5
Ω
R
T
G
= 125°C
J
L = 100µH
50
0
100
0
t
r
t
d(on)
30
50
70
(A)
90
110
30
50
70
(A)
90
110
I
I
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
25,000
20,000
15,000
10,000
8,000
6,000
4,000
2,000
0
V
I
= 400V
V
= 400V
DD
= 65A
DD
= 5
Ω
R
T
D
G
T
= 125°C
= 125°C
J
J
L = 100µH
E
ON
includes
L = 100µH
E
E
ON
includes
off
E
off
diode reverse recovery.
diode reverse recovery.
E
on
E
on
5,000
0
30 40 50
60
70 80
(A)
90 100
110
0
5
10 15 20 25 30 35 40 45 50
I
D
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT60M80L2VR
Gat
e
V
oltage
Drai
n
C
urrent
10%
90%
Gat
e
V
oltage
T 125°C
T 125°C
J
J
t
d(off)
t
d(on)
90%
90%
Drai
n
V
oltage
t
r
t
f
10%
0
5%
10%
5%
Drai
n
V
oltage
Drai
n
C
urrent
Switchin
g
E
nergy
Switchin
g
E
nergy
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT60DF60
V
DS
I
D
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-26
4
M
AX
TM
(L2VFR
)
P
ackag
e
O
utline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
