Microchip-Tech-APT77N60JC3
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APT77N60JC3
600V 77A
0.035
Ω
Super Junction MOSFET
S
S
7
• Ultra
Low R
DS(ON)
2
2
D
–
G
T
• Low
Miller Capacitance
• Ultra
Low Gate Charge, Q
• Avalanche
Energy Rated
O
S
g
“UL Recognized”
file # E145592
IS OTO P
®
dv
• Extreme
/
Rated
dt
D
S
• Dual
die (parallel)
G
Unless stated otherwise, Microsemi discrete MOSFE
T
s
c
ontain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
All Ratings per die:
T =
25°C unless otherwise speci
fi
ed
.
C
Symbol
V
DSS
I
D
Parameter
APT77N60JC3
UNIT
Drain-Source Voltage
600
Volts
1
77
231
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
2
I
DM
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±20
V
GS
±30
V
GSM
568
Watts
W/°C
T
o
tal Power Dissipation @ T
C
= 25°C
Linear Derating Factor
P
D
4.55
-55 – to 150
300
Operating and Storage Junction
T
e
mperature Range
Lead
T
e
mperature: 0.063″ from Case for 10 Sec.
T
J
,T
STG
T
L
°C
dv
/
Drain-Source Voltage slope (V
DS
= 400V, I
D
= 77A, T
J
= 125°C)
50
V/ns
dt
2
20
Amps
I
AR
E
AR
E
AS
Avalanche Current
3
1
Repetitive Avalanche Energy
mJ
180
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
(DSS)
R
DS(on)
Characteristic / Test Conditions
MIN
600
TYP
MAX
UNIT
Volts
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 500
μ
A)
4
.030
1.0
0.035
50
Ohms
Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 70A)
Zero Gate Voltage Drain Current
(V
DS
= 650V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 650V, V
GS
= 0V, T
C
= 150°C)
Gate-Source Leakage Current
(V
GS
= ±20
V
, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5.92mA)
μ
A
I
DSS
500
±200
3.9
nA
I
GSS
2.1
3
Volts
V
GS(th)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
™
“COOLMOS comprise
a new family of transistors developed by In
fi
neon Technologies AG.
“COOLMOS” is a trade-
mark of In
fi
neon Technologies AG”
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT77N60JC3
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
13600
4400
290
505
48
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
640
T
o
tal Gate Charge
GS
V
= 300V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
I
= 77A @ 25°C
D
240
18
RESISTIVE SWITCHING
V
= 10V
GS
27
V
= 380V
DD
ns
I
= 77A @ 125°C
t
d(off)
110
165
Turn-off Delay Time
Fall Time
D
R
= 0.9
Ω
G
t
f
8
12
INDUCTIVE SWITCHING @ 25°C
6
E
on
E
off
E
on
E
off
1670
2880
2300
3100
Turn-on Switching Energy
V
= 400V,
V =
15V
GS
DD
I
= 77A,
R =
5
Ω
Turn-off Switching Energy
D
G
INDUCTIVE SWITCHING @ 125°C
μ
J
6
Turn-on Switching Energy
V
= 400V, V
= 15V
GS
DD
I
= 77A,
R =
5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
77
I
S
Continuous Source Current
(Body Diode)
Amps
1
231
1.2
I
SM
V
SD
t
rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
1
Volts
ns
(V
GS
= 0V, I
S
= –
77A
)
861
46
Reverse Recovery Time
(I
S
= –
77A
, dl
S
/dt = 100A/
μ
s, V
R
= 350V)
μ
C
Q
rr
Reverse Recovery Charge
(I
S
= –
77A
, dl
S
/dt = 100A/
μ
s, V
R
= 350V)
dv
5
Peak Diode Recovery
dv
/
dt
V/ns
6
/
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.22
40
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
4 Starting
T =
+25°C, L = 36.0mH, R
= 25
Ω
, Peak I
= 10A
j
G
L
dv
5
/
numbers re
fl
ect the limitations of the test circuit rather than the
dt
di
2 Pulse
T
e
st: Pulse width < 380
μ
s, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
device itself.
I
≤
–
I
77A
/
≤
700A/
μ
s
V
R
≤
V
T
≤
150
°
C
J
S
D
DSS
dt
6 Eon
includes diode reverse recovery.
See
fi
gures 18, 20.
7 Repetitve
avalanche causes additional power losses that can be
calculated as
P
AV
=E
AR
*f
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
0.05
0
SINGLE PULSE
t
1
0.1
t
/
2
Duty Factor D =
Peak T
= P
x Z
0.05
+ T
C
J
DM
θJC
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance
APT77N60JC3
200
180
160
140
120
100
80
V
GS
=15 &10V
6V & 6.5V
5.5V
5V
60
4.5V
40
4V
20
20
0
0
5
10
15
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2,
NOT USED
FIGURE 3, LOW
VOLTAGE OUTPUT
CHARACTERISTICS
1.40
200
180
160
140
120
100
80
NORMALIZED TO
V
DS
> I
D
(ON) x
R
DS
(ON)MAX.
250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J
= -55°C
V
= 10V
@
47A
GS
1.30
1.20
1.10
1.00
V
GS
=10V
T
J
= +25°C
60
V
GS
=20V
40
0.90
0.80
T
J
= +125°C
20
0
0
1
2
3
4
5
6
0
20 40 60 80
100 120 140 160 180
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
GS
D
FIGURE 4,
TRANSFER CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
80
70
60
50
40
30
20
10
0
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25 50 75
100 125 150
T ,
CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T , JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
C
J
1.2
3
I
= 47A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.7
0.6
0.5
0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T ,
CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
J
C
Typical Performance
APT77N60JC3
60,000
10,000
1000
C
iss
100
DC line
C
oss
1,000
100
10
10
100
μ
s
10
μ
s
1ms
10ms
100ms
1
C
rss
0.1
1
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
10
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,
CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
200
I
= 77A
D
100
12
8
T
J
=+150°C
T
J
=+25°C
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
10
4
0
1
0
100 200 300 400 500 600 700 800
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13,
SOURCE-DRAIN DIODE FORWARD VOLTAGE
600
250
V
= 400V
DD
= 5
Ω
R
T
G
t
d(off)
500
400
300
200
= 125°C
200
150
100
J
L = 100
μ
H
t
f
V
= 400V
DD
= 5
Ω
R
T
G
= 125°C
J
L = 100
μ
H
t
r
50
0
100
0
t
d(on)
10
30
50
70
I
90
(A)
110 130 150
10
30
50
70
I
90
(A)
110 130
150
D
D
FIGURE 14,
DEL
A
Y
T
IMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
8000
7000
6000
5000
4000
3000
2000
16000
14000
12000
10000
8000
6000
4000
2000
0
V
= 400V
V
I
= 400V
DD
= 5
Ω
DD
= 77A
R
T
G
D
= 125°C
T
= 125°C
J
J
E
off
L = 100
μ
H
L = 100
μ
H
E
ON
includes
E
ON
includes
E
off
diode reverse recovery.
diode reverse recovery.
E
on
E
on
1000
0
10
30
50
70
I
90
(A)
110 130
150
0
5
10 15 20 25 30 35 40 45 50
R ,
GATE RESISTANCE (Ohms)
D
G
FIGURE 16,
SWITCHING ENERGY
vs CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT77N60JC3
Gate Voltage
90%
10%
Gate Voltage
T
T
J
= 125
C
T
J
= 125
C
t
d(on)
t
d(off)
Collector Current
t
f
90%
Collector Current
t
r
90%
0
Collector Voltage
5 %
5%
10%
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and De
fi
nitions
Figure 19, Turn-off Switching Waveforms and De
fi
nitions
APT30DF60
V
CE
I
C
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
