Microchip-Tech-APT8014L2LLG
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APT8014L2LL
800V 52A 0.140
Ω
R
POWER MOS 7
MOSFET
TO-264
Max
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular TO-264 Max Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT8014L2LL
UNIT
V
DSS
I
D
Drain-Source Voltage
800
52
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
208
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
893
P
D
7.14
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
52
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
800
2
Drain-Source On-State Resistance
(V
GS
= 10V, 26A)
0.140
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= 800V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 640V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5mA)
I
DSS
µA
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT8014L2LL
Tes
t
C
onditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
7238
1402
248
285
30
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 400V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
I
= 52A @ 25°C
D
170
20
RESISTIV
E
S
WITCHING
V
= 15V
GS
19
V
= 400V
DD
ns
µ
J
I
= 52A @ 25°C
D
t
d(off)
69
Turn-off Delay Time
R
= 0.6
Ω
G
t
f
Fall Time
15
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
1091
1135
1662
1383
V
= 533V,
V =
15V
GS
DD
I
= 52A,
R =
1.7
Ω
Turn-off Switching Energy
D
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
6
Turn-on Switching Energy
V
= 533V, V
= 15V
GS
DD
I
= 52A,
R =
1.7
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
I
S
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
52
208
1.3
Continuous Source Current
(Body Diode)
Amps
I
SM
1
Pulsed Source Current
(Body Diode)
2
V
SD
t
rr
Diode Forward Voltage
(V
GS
= 0V, I
S
= -I
D
52A
)
Volts
ns
Reverse Recovery Time
(I
S
= -I
D
52A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
52A
, dl
S
/dt = 100A/µs)
930
29
Q
rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
10
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
4 Starting
T =
+25°C, L = 2.37mH, R
= 25
Ω
, Peak I
= 52A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
device itself.
I
≤
–
I
52A
/
≤
700A/µs
V
R
≤
800V
T
≤
150
°
C
J
dt
S
D
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
t
0.06
1
0.3
t
2
0.04
t
1
Duty Factor
D =
/
t
2
Peak T
= P
x Z
+ T
0.02
0
0.1
J
DM
θ
JC C
0.05
SINGL
E
P
ULSE
10
-5
10
-4
10
-3
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
10
-2
10
-1
1.0
Typical Performance Curves
APT8014L2LL
140
120
100
80
8V
7V
V
=15 & 10V
GS
RC MODEL
6.5V
Junction
temp. ( ”C)
0.0509
0.0522F
0.988F
6V
Power
(Watts)
60
5.5V
0.0894
40
Case temperature
5V
20
0
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
140
1.40
V
> I
(ON) x
R
(ON)MAX.
DS
NORMALIZED TO
DS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@
26A
GS
120
100
80
60
40
20
0
1.30
1.20
1.10
1.00
V
=10V
T
= -55°C
GS
J
T
J
= +25°C
V
=20V
80
GS
0.90
0.80
T
= +125°C
J
0
1
2
3
4
5
6
7
8
0
20
40
60
100
120
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
1.10
1.05
1.00
60
50
40
30
20
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
1.2
2.5
I
= 26A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT8014L2LL
208
20,000
10,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
100
50
C
iss
100µS
C
oss
1,000
10
5
1mS
10mS
T
=+25°C
C
C
rss
T =+150°C
J
SINGL
E
P
ULSE
10
1
100
1
100
800
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
200
16
I
= 52A
D
100
12
V
=
1
60V
T =+150°C
J
DS
T =+25°C
J
V
=
4
00V
DS
V
=
6
40V
8
DS
10
4
0
1
0
50 100
150 200 250 300 350 400
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
160
140
V
= 533V
DD
= 3
Ω
t
d(off)
R
T
140
120
G
120
100
80
60
40
20
0
= 125°C
J
L = 100µH
t
f
V
= 533V
DD
= 3
Ω
100
80
60
40
20
0
R
T
G
= 125°C
J
L = 100µH
t
r
t
d(on)
10
20
30
40
I
50
(A)
60
70
80
10
20
30
40
I
50
(A)
60
70
80
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
12000
10000
8000
6000
4000
3000
2500
2000
1500
1000
V
= 533V
V
I
= 533V
DD
DD
= 52A
R
= 3
Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
E
ON
includes
E
ON
includes
diode reverse recovery.
diode reverse recovery.
E
on
E
on
E
off
500
0
2000
0
10
20
30
40
50
(A)
60
70
80
0
5
10 15 20 25 30 35 40 45 50
I
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
D
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014L2LL
10 %
90%
Gate Voltage
Drain Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
90%
90%
t
t
f
r
5 %
10%
0
5 %
10 %
Drain Current
Switching Energy
Switching Energy
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT30DF60
V
CE
I
C
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-26
4
M
AX
TM
(L2
)
P
ackag
e
O
utline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
