Microchip-Tech-APT80GA90B
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APT80GA90B
APT80GA90S
900V
High Speed PT IGBT
POWER MOS 8
®
is a high speed Punch-Through switch-mode IGB
T
.
L
ow E
off
is achieved
APT80GA90S
through leading technology silicon design and lifetime control processes.
A reduced E
off
–
D
3
PAK
V
CE(ON)
tradeoff results in superior ef
fi
ciency compared to other IGBT technologies.
Low
gate charge and a greatly reduced ratio of C
res
/C
ies
provide excellent noise immunity, short
delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
APT80GA90B
Single die IGBT
FEATURES
TYPICAL APPLICATIONS
• Fast
switching with low EMI
• Very
Low E
off
for maximum ef
fi
ciency
• Ultra
low C
res
for improved noise immunity
• Low
conduction loss
• ZVS
phase shifted and other full bridge
• Half
bridge
• High
power PFC boost
• Welding
• Low
gate charge
• UPS,
solar, and other inverters
• High
frequency, high ef
fi
ciency industrial
• Increased
intrinsic gate resistance for low EMI
• RoHS
compliant
Absolute Maximum Ratings
Symbol Parameter
Ratings
Unit
Collector Emitter Voltage
900
V
V
ces
I
C1
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
145
80
A
I
C2
I
CM
239
V
GE
Gate-Emitter Voltage
2
±30
V
P
D
T
o
tal Power Dissipation @ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Operating and Storage Junction
T
e
mperature Range
625
W
SSOA
T
J
, T
STG
T
L
239A @ 900V
-55 to 150
°C
Lead
T
e
mperature for Soldering: 0.063″ from Case for 10 Seconds
300
Static Characteristics
Symbol Parameter
T =
25°C unless otherwise speci
fi
ed
J
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1.0mA
900
T
J
= 25°C
T
J
= 125°C
2.5
2.2
4.5
3.1
V
GE
= 15
V
,
I
C
= 47A
V
V
CE(on)
V
GE(th)
I
CES
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
V
GE
=V
CE
, I
C
= 1mA
3
6
T
J
= 25°C
250
V
CE
= 900V,
μ
A
V
GE
= 0V
T
J
= 125°C
1000
±100
I
GES
V
GS
= ±30V
nA
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
–
Max
0.2
–
Unit
°C/W
g
R
θ
JC
W
T
Junction to Case Thermal Resistance
Package Weight
–
–
5.9
T
o
rque
Mounting
T
o
rque (TO-247 Package), 4-40 or M3 screw
in·lbf
10
APT80GA90B_S
Dynamic Characteristics
T =
25°C unless otherwise speci
fi
ed
J
Symbol
C
ies
Parameter
Test Conditions
Capacitance
Min
Typ
4560
411
62
Max
Unit
Input Capacitance
C
oes
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
Gate-Emitter Charge
V
GE
= 0V, V
CE
= 25V
f = 1MHz
pF
C
res
Q
g
3
Gate Charge
200
30
Q
ge
V
GE
= 15V
nC
A
72
V
CE
= 450V
Q
gc
Gate- Collector Charge
I
C
= 47A
T
J
= 150°C, R
G
= 4.7
Ω
4
, V
GE
= 15V,
L= 100uH, V
CE
= 900V
Inductive Switching (25°C)
V
CC
= 600V
239
SSOA
Switching Safe Operating Area
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Current Rise Time
18
29
ns
μ
J
ns
μ
J
Turn-Off Delay Time
Current Fall Time
149
85
V
GE
= 15V
I
C
= 47A
R
G
= 4.7
Ω
4
E
on2
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
1652
1389
18
6
E
off
T
J
= +25°C
t
d(on
t
r
t
d(off)
t
f
Inductive Switching (125°C)
31
V
CC
= 600V
Turn-Off Delay Time
Current Fall Time
192
128
2813
2082
V
GE
= 15V
I
C
= 47A
R
G
= 4.7
Ω
4
E
on2
Turn-On Switching Energy
Turn-Off Switching Energy
6
E
off
T
J
= +125°C
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380
μ
s
, duty cycle
< 2%.
See Mil-Std-750 Method 3471.
R
G
is external gate resistance, not including internal gate resistance or gate driver impedance.
(MIC4452)
E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the speci
fi
cations and information contained herein.
6
Typical Performance Curves
APT80GA90B_S
100
350
300
250
200
150
100
50
V
= 15V
GE
T
J
= 125°C
T
J
= 150°C
13V
15V
T
J
= 55°C
10V
80
60
40
20
T
J
= 25°C
9V
8V
7V
6V
5V
0
0
0
V
1
2
3
4
5
6
0
V
4
8
12 16 20 24
28
32
, COLLECTOR-TO-EMITTER VOLTAGE (V)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1,
Output Characteristics
(T =
25°C)
FIGURE 2,
Output Characteristics
(T =
25°C)
J
J
16
14
12
10
250
200
150
100
50
250
μ
s PULSE
TEST<0.5 % DUTY
CYCLE
I
= 47A
C
T
= 25°C
J
V
= 180V
CE
V
= 450V
CE
8
V
= 720V
CE
6
4
2
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
0
0
20 40 60
80 100 120
140 160 180
200
GATE CHARGE (nC)
0
2
4
6
8
10
12 14
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 4,
Gate charge
FIGURE 3,
Transfer Characteristics
6
5
4
3
2
6
5
4
3
2
1
0
T
J
= 25°C.
250
μ
s PULSE TEST
<0.5 % DUTY CYCLE
I
= 94A
C
I
= 94A
C
I
= 47A
I
= 47A
C
C
I
= 23.5A
C
I
= 23.5A
C
1
0
V
GE
= 15V.
250
μ
s PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
0
25
50
75
100
125
150
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction
T
e
mperature (°C)
GE
J
FIGURE 5,
On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6,
On State Voltage vs Junction Temperature
1.15
150
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
125
100
75
50
25
0
-50 -25
0
25 50
75 100
125 150
25
50
75
100
125
150
T , JUNCTION TEMPERATURE
T ,
Case
T
e
mperature (°C)
J
C
FIGURE 7,
Threshold Voltage vs Junction Temperature
FIGURE 8,
DC Collector Current vs Case Temperature
Typical Performance Curves
APT80GA90B_S
24
300
250
200
150
100
50
V
CE
= 600V
T
J
= 25°C
,
or 125°C
22
R
G
= 4.7
ꢀ
L = 100
μ
H
20
18
16
14
12
10
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
600V
R
G
=
4.7
ꢀ
L = 100
μ
H
0
0
20
40
60
80
100
0
20
40
60
80
100
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
80
60
40
20
0
200
R
G
=
4.7
ꢀ
, L
=
100
μ
H, V
CE
=
600V
175
T
J
=
125°C, V
GE
=
15V
150
125
100
75
T
J
=
25°C, V
GE
=
15V
50
T
J
=
25 or 125°C,V
GE
=
15V
25
R
G
=
4.7
ꢀ
, L
=
100
μ
H, V
CE
=
600V
0
0
20
40
60
80
100
0
20
40
60
80
100
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
7000
6000
5000
4000
3000
2000
1000
6000
5000
4000
3000
2000
1000
V
V
=
=
600V
+15V
V
V
=
=
600V
+15V
CE
GE
CE
GE
R
=4.7
ꢀ
R
= 4.7
ꢀ
G
G
T
J
=
125°C
T
J
=
125°C
T
J
=
25°C
T
J
=
25°C
0
0
0
20
40
60
80
100
0
20
40
60
80
100
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn-Off Energy Loss vs Collector Current
12000
10000
8000
6000
4000
2000
7000
E
on2
94A
V
V
T
=
=
600V
+15V
V
V
=
=
600V
+15V
CE
GE
CE
GE
E
on2,
94A
= 125°C
R
= 4.7
ꢀ
6000
5000
4000
3000
2000
1000
J
G
E
off,
94A
E
off,
94A
E
on2,
47A
E
on2,
47A
E
off,
47A
E
off,
47A
E
on2,
23.5A
E
on2,
23.5A
E
off,
23.5A
E
off,
23.5A
0
0
0
10
G
20
30
40
50
0
25
50
75
100
125
R ,
GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 15, Switching Energy Losses vs Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT80GA90B_S
1000
100
10
10000
C
ies
1000
100
10
C
oes
1
C
res
0.1
0
200
400
600
800
1
CE
10
100
1000
V
, COLLECTOR-TO-EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
FIGURE 18,
Minimum Switching Safe Operating Area
FIGURE 17,
Capacitance vs Collector-To-Emitter Voltage
0.25
0.20
D = 0.9
0.15
0.10
0.05
0
0.7
0.5
Note:
t
1
0.3
t
2
t
1
t
/
2
Duty Factor D =
0.1
Peak T
= P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
0.05
10
-4
10
-2
10
-5
10
-3
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT80GA90B_S
10%
Gate Voltage
T
= 125°C
J
t
d(on)
APT30DQ100
90%
Collector Current
Collector Voltage
t
r
V
CE
V
CC
I
C
10%
5%
5%
Switching Energy
A
D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and De
fi
nitions
T
= 125°C
J
90%
t
d(off)
Gate Voltage
Collector Voltage
t
f
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and De
fi
nitions
D
3
PAK Package Outline
TO-247 (B) Package Outline
e1 SAC:
Tin, Silver, Copper
e3 100%
Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
1.016 (.040)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.
1.01 (.040)
1.40 (.055)
Gate
Collector
}
Emitter
Emitter
Collector
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Dimensions in Millimeters (Inches)
