Microchip-Tech-APTGLQ300A120G
| Part # | Microchip-Tech-APTGLQ300A120G |
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APTGLQ300A120G
Phase leg
High speed Trench + Field Stop
IGBT4 Power module
V
CES
= 1200V
I
C
= 300A @ Tc = 80°C
Application
•
•
•
•
Welding converters
VBUS
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
OUT
•
High speed Trench + Field Stop IGBT 4
–
–
–
Low voltage drop
Low leakage current
Low switching losses
Q2
G2
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
M5 power connectors
E2
0/VBUS
Benefits
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS compliant
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
(Per IGBT)
Symbol
Parameter
Collector – Emitter Voltage
Max ratings
1200
500
Unit
V
V
CES
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
Continuous Collector Current
A
300
960
±20
1500
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 6
APTGLQ300A120G
Electrical Characteristics
(Per IGBT)
Symbol Characteristic
Test Conditions
V
GE
= 0V, V
CE
= 1200V
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
200
1.78 2.05 2.42
2.6
µA
T
j
= 25°C
T
j
= 150°C
V
GE
=15V
I
C
= 300A
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
V
GE
= V
CE
, I
C
= 10.4 mA
V
GE
= 20V, V
CE
= 0V
5.3
5.8
6.3
V
I
GES
Gate – Emitter Leakage Current
480
nA
Dynamic Characteristics
(Per IGBT)
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min Typ Max Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
17.6
1
0.9
nF
nC
V
GE
= 15V, I
C
= 300A
Q
G
Gate charge
1290
V
CE
= 960V
Inductive Switching (25°C)
V
GE
= ±15V
T
d(on)
T
r
Turn-on Delay Time
Rise Time
30
57
V
Bus
= 600V
ns
T
d(off)
Turn-off Delay Time
290
I
C
= 300A
R
G
= 1.6
Ω
Inductive Switching (150°C)
V
GE
= ±15V
T
f
T
d(on)
T
r
Fall Time
16
30
Turn-on Delay Time
Rise Time
49
V
Bus
= 600V
ns
T
d(off)
Turn-off Delay Time
366
48
I
C
= 300A
R
G
= 1.6
Ω
T
f
Fall Time
V
GE
= ±15V
E
on
Turn on Energy
T
j
= 150°C
T
j
= 150°C
26
V
Bus
= 600V
I
C
= 300A
R
G
= 1.6
Ω
mJ
E
off
R
G
Turn off Energy
16
2.5
Integrated gate resistor
Short Circuit data
Ω
A
V
GE
≤
15V ; V
Bus
= 600V
t
p
≤
10µs ; T
j
= 150°C
I
sc
1000
R
thJC
Junction to Case Thermal Resistance
0.1 °C/W
Diode ratings and characteristics
(per diode)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
RRM
Peak Repetitive Reverse Voltage
1200
400
V
µA
A
I
RM
I
F
Reverse Leakage Current
DC Forward Current
V
R
=1200V
Tc =60°C
240
2.5
3
I
F
= 240A
I
F
= 480A
3.5
V
F
t
rr
Diode Forward Voltage
Reverse Recovery Time
V
T
j
= 125°C
T
j
= 25°C
I
F
= 240A
1.8
265
ns
I
F
= 240A
V
R
= 800V
di/dt = 800A/µs
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
350
2.24
11.6
Q
rr
Reverse Recovery Charge
µC
R
thJC
Junction to Case Thermal Resistance
0.17 °C/W
2 – 6
APTGLQ300A120G
Thermal and package characteristics
Symbol Characteristic
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
-40
3
Max
Unit
V
T
J
T
JOP
T
STG
T
C
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
175
T
J
max -25
125
°C
Operating Case Temperature
125
5
3.5
To heatsink
For terminals
M6
M5
N.m
g
Torque Mounting
torque
2
Wt
Package Weight
300
Package outline
(dimensions in mm)
3 – 6
APTGLQ300A120G
Typical Performance Curve
Output Characteristics (V
G
E
=15V)
Output Characteristics
600
600
500
400
300
200
100
0
T
J
= 150°C
500
V
GE
=20V
T
J
=25°C
V
GE
=13V
V
GE
=15V
400
300
200
T
J
=150°C
V
GE
=9V
100
0
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
V
CE
(V)
V
CE
(V)
E
n
ergy losses vs Collecto
r
C
urrent
Transfer
t
C
har
a
cteristics
600
500
400
300
200
100
0
84
72
60
48
36
24
12
0
V
CE
= 600V
V
GE
= 15V
G
= 1.6
Ω
T
J
= 150°C
Eon
R
T
J
=150°C
Eof f
T
J
=25°C
0
100 200 300 400 500 600
5
6
7
8
9
10 11 12
I
C
(A)
V
GE
(V)
S
w
i
tchin
g
E
n
ergyLosses vs Gate
R
e
sistance
40
V
CE
= 600V
V
GE
=15V
I
C
= 300A
32
24
16
8
Eon
T
J
= 150°C
Eof f
1.5
2.5
3.5
4.5
Gate R
e
sista
n
ce (ohms)
m
a
xi
m
u
m E
f
fective Transien
t
T
hermal Impedan
c
e, Junction to Case vs Pulse Duration
0.12
0.1
IGBT
D = 0.9
0.08
0.06
0.04
0.02
0
0.7
0.5
0.3
0.1
Single
P
u
lse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectang
u
la
r
P
ulse
D
u
ratio
n
(
S
e
c
o
n
d
s)
4 – 6
APTGLQ300A120G
Diode For
w
a
rd Characteristic
Operatin
g
F
r
e
q
u
ency vs Collector Current
210
480
V
CE
=600V
D=50%
R
G
=1.6
Ω
T
J
=150°C
T
C
=75°C
180
150
120
90
400
ZVS
320
T
J
=125°C
ZCS
240
160
60
T
J
=25°C
80
30
ha
r
d
s
w
i
tching
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
80
160
240
I
C
(A)
320
400
V
F
(V)
m
a
xi
m
u
m E
f
fective Transien
t
T
hermal Impedan
c
e, Junction to Case vs Pulse Duration
0.2
0.16
0.12
0.08
0.04
0
D = 0.9
Diode
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
R
e
c
tangular Pulse Duration
(Seconds)
5 – 6
APTGLQ300A120G
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
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will also apply.
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authorized personnel of Microsemi.
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property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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new proposed specific part.
6 – 6
