Microchip-Tech-APTGT150H60TG
| Part # | Microchip-Tech-APTGT150H60TG |
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APTGT150H60TG
Full – Bridge
Trench + Field Stop IGBT3
Power Module
V
CES
= 600V
I
C
= 150A @ Tc = 80°C
Application
VBUS
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q3
Q1
G3
E3
G1
E1
Features
OUT1
Trench + Field Stop IGBT3 Technology
OUT2
–
–
–
–
–
–
–
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery
parallel diodes
Low diode VF
Q2
Q4
G4
E4
G2
E2
Low leakage current
RBSOA and SCSOA rated
N
T
C
1
N
T
C
2
0/V
B
U
S
Kelvin emitter for easy drive
Very low stray inductance
–
–
Symmetrical design
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector – Emitter Breakdown Voltage
600
225
150
350
±20
480
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
Continuous Collector Current
A
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
T
C
= 25°C
T
j
= 150°C
RBSOA Reverse
Bias Safe Operating Area
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 6
APTGT150H60TG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
250
1.9
µA
T
j
= 25°C
T
j
= 150°C
1.5
1.7
5.8
V
GE
=15V
I
C
= 150A
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20V, V
CE
= 0V
5.0
6.5
400
V
nA
I
GES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
ies
C
oes
C
res
T
d(on)
T
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
GE
= 0V
9200
V
CE
= 25V
f = 1MHz
pF
580
270
115
45
Inductive Switching (25°C)
V
V
GE
= ±15V
Bus
= 300V
ns
T
d(off)
Turn-off Delay Time
225
55
I
C
= 150A
R
G
= 3.3
Inductive Switching (150°C)
V
GE
= ±15V
T
f
T
d(on)
T
r
Fall Time
Turn-on Delay Time
Rise Time
130
50
V
Bus
= 300V
ns
I
C
= 150A
R
G
= 3.3
T
d(off)
Turn-off Delay Time
300
T
f
Fall Time
70
0.85
1.5
4.1
5.3
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
E
on
Turn on Energy
mJ
mJ
E
off
Turn off Energy
R
G
= 3.3
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
V
R
=600V
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
600
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
250
500
I
RM
µA
I
F
150
1.6
1.5
A
V
I
F
= 150A
2
V
F
Diode Forward Voltage
V
GE
= 0V
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
130
t
rr
Q
rr
E
r
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
225
6.9
I
F
= 150A
V
R
= 300V
di/dt =3000A/µs
14.5
1.6
3.5
2 – 6
APTGT150H60TG
Symbol Characteristic
Min Typ Max
Unit
R
25
Resistance @ 25°C
50
k
K
B
25/85
T
25
= 298.15 K
3952
R
25
T: Thermistor temperature
R
T
: Thermistor value at T
R
T
1
1
25
/
8
5
exp
B
T
25
T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.31
0.52
R
thJC
Junction to Case Thermal Resistance
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
2.5
V
175
125
100
4.7
°C
Operating Case Temperature
Torque Mounting
torque
To Heatsink
M5
N.m
g
Wt Package
Weight
160
SP4 Package outline
(dimensions in mm)
3 – 6
APTGT150H60TG
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
Output Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
V
GE
=19V
T
J
= 150°C
V
GE
=13V
V
GE
=15V
T
J
=150°C
V
GE
=9V
T
J
=25°C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
V
CE
(V)
V
CE
(V)
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
10
8
V
CE
= 300V
Eoff
T
J
=25°C
V
GE
= 15V
R
G
= 3.3
Ω
T
J
= 150°C
6
Er
4
T
J
=125°C
Eon
T
J
=150°C
2
T
J
=25°C
10
0
0
0
50
100
150
200
250
300
5
6
7
8
9
11
12
I
C
(A)
V
GE
(V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
350
300
250
200
150
100
50
V
CE
= 300V
Eon
V
GE
=15V
10
I
C
= 150A
Eoff
Eoff
T
J
= 150°C
8
6
4
2
0
V
GE
=15V
T
J
=150°C
R
G
=3.3
Ω
Er
Eon
0
0
5
10
15
20
25
0
100 200 300 400 500 600 700
V
CE
(V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
IGBT
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
0
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 6
APTGT150H60TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
250
200
150
100
50
120
100
80
60
40
20
0
V
CE
=300V
D=50%
R
G
=3.3
Ω
ZVS
ZCS
T
J
=150°C
T
c
=85°C
T
J
=125°C
T
J
=150°C
Hard
switching
T
J
=25°C
0
0
0.4
0.8
1.2
1.6
2
2.4
0
50
100
150
200
V
F
(V)
I
C
(A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.001
0.05
0.00001
0.0001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
5 – 6
APTGT150H60TG
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
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authorized personnel of Microsemi.
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property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
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new proposed specific part.
6 – 6
