Microchip-Tech-APTGT300A120D3G
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APTGT300A120D3G
Phase leg
Trench + Field Stop IGBT3
Power Module
V
CES
= 1200V
I
C
= 300A @ Tc = 80°C
Application
Welding converters
3
Q1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
5
Features
1
Q2
Trench + Field Stop IGBT
3
T
echnology
6
–
–
–
–
–
–
–
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery
parallel diodes
Low diode VF
7
2
Low leakage current
RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector – Emitter Breakdown Voltage
1200
440
300
600
±20
1450
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
Continuous Collector Current
A
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
T
C
= 25°C
RBSOA Reverse
Bias Safe Operating Area
T
j
= 125°C
600A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 6
APTGT300A120D3G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
500
2.1
µA
T
j
= 25°C
1.7
2.0
5.8
V
GE
= 15V
V
CE(sat)
Collector Emitter saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
I
C
= 300A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 12mA
V
GE
= 20V, V
CE
= 0V
5.0
6.5
400
V
nA
I
GES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
ies
C
res
Input Capacitance
Reverse Transfer Capacitance
V
GE
= 0V ; V
CE
= 25V
f = 1MHz
GE
=±15V, I
C
=300A
21
1
nF
V
Q
G
Gate charge
2.8
µC
V
CE
=600V
Inductive Switching (25°C)
V
GE
= ±15V
T
d(on)
T
r
Turn-on Delay Time
Rise Time
250
90
ns
V
Bus
= 600V
T
d(off)
Turn-off Delay Time
550
I
C
= 300A
R
G
= 2.2
Inductive Switching (125°C)
T
f
T
d(on)
T
r
Fall Time
130
300
100
650
180
Turn-on Delay Time
Rise Time
V
GE
= ±15V
ns
V
Bus
= 600V
I
C
= 300A
R
G
= 2.2
T
d(off)
Turn-off Delay Time
T
f
Fall Time
V
GE
= ±15V
V
Bus
= 600V
I
C
= 300A
E
on
Turn on Energy
T
j
= 125°C
T
j
= 125°C
25
44
mJ
A
E
off
I
sc
Turn off Energy
Short Circuit data
R
G
= 2.2
V
GE
≤
15V ; V
Bus
= 900V
1200
t
p
≤
10µs ; T
j
= 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
I
RRM
I
F
1200
V
µA
A
T
j
= 25°C
750
1000
V
R
=1200V
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
300
1.6
1.6
I
F
= 300A
V
GE
= 0V
2.1
V
F
Diode Forward Voltage
V
170
t
rr
Reverse Recovery Time
ns
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
280
28
56
12
22
I
F
= 300A
V
R
= 600V
di/dt =3500A/µs
Q
rr
E
rr
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
2 – 6
APTGT300A120D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.085
0.16
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
3
150
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting
torque
Wt Package
Weight
N.m
g
3
D3 Package outline
(dimensions in mm)
3 – 6
APTGT300A120D3G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
600
600
500
400
300
200
100
0
T
J
= 125°C
500
400
300
200
100
0
V
GE
=17V
V
GE
=13V
V
GE
=15V
V
GE
=9V
T
J
=25°C
T
J
=125°C
0
1
2
3
4
0
1
2
CE
(V)
3
4
V
CE
(V)
V
Energy losses vs Collector Current
Transfert Characteristics
600
500
400
300
200
100
0
100
V
CE
= 600V
GE
= 15V
G
= 2.2
Ω
T
J
= 125°C
Eoff
V
80
60
40
20
0
T
J
=25°C
R
Eon
Err
T
J
=125°C
Eon
0
100 200 300 400 500 600
5
6
7
8
9
10
11
12
I
C
(A)
V
GE
(V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
150
700
V
CE
= 600V
GE
=15V
C
= 300A
Eon
600
500
400
300
200
100
0
125
100
75
50
25
0
V
I
T
J
= 125°C
Eoff
V
GE
=15V
T
J
=125°C
R
G
=2.2
Ω
Err
0
300
600
900
CE
(V)
1200
1500
0
4
8
12
16
20
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
IGBT
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 6
APTGT300A120D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
50
40
30
20
10
0
600
V
CE
=600V
D=50%
R
G
=2.2
Ω
T
J
=25°C
500
400
300
200
100
0
T
J
=125°C
T
C
=75°C
ZVS
ZCS
Hard
switching
T
J
=125°C
0
100
200
I
C
(A)
300
400
500
0
0.4
0.8
1.2
F
(V)
1.6
2
2.4
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.9
0.7
Diode
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
5 – 6
APTGT300A120D3G
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inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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application. User or customer shall not rely on any data and performance specifications or parameters provided by
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new proposed specific part.
6 – 6
