Microchip-Tech-APTGT300DU60G
| Part # | Microchip-Tech-APTGT300DU60G |
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APTGT300DU60G
V
CES
= 600V
I
C
= 300A @ Tc = 80°C
Dual common source
Trench + Field Stop IGBT3
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
C1
C2
Q1
Q2
G1
E1
G2
E2
Features
Trench + Field Stop IGBT3 Technology
–
–
–
–
–
–
–
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery
parallel diodes
Low diode VF
E
Low leakage current
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
–
–
Symmetrical design
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector – Emitter Breakdown Voltage
600
430
300
500
±20
1150
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
Continuous Collector Current
A
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
T
C
= 25°C
T
j
= 150°C
RBSOA Reverse
Bias Safe Operating Area
600A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 6
APTGT300DU60G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
350
1.8
µA
T
j
= 25°C
T
j
= 150°C
1.4
1.5
5.8
V
GE
=15V
I
C
= 300A
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20V, V
CE
= 0V
5.0
6.5
500
V
nA
I
GES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
ies
C
oes
C
res
T
d(on)
T
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
GE
= 0V
24
V
CE
= 25V
f = 1MHz
nF
1.5
0.75
115
45
Inductive Switching (25°C)
V
V
GE
= ±15V
Bus
= 300V
ns
T
d(off)
Turn-off Delay Time
200
55
I
C
= 300A
R
G
= 1.8
Inductive Switching (150°C)
V
GE
= ±15V
T
f
T
d(on)
T
r
Fall Time
Turn-on Delay Time
Rise Time
120
50
V
Bus
= 300V
ns
I
C
= 300A
T
d(off)
Turn-off Delay Time
250
R
G
= 1.8
T
f
Fall Time
70
1.5
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
GE
= ±15V
E
on
Turn on Energy
mJ
mJ
2.7
V
Bus
= 300V
I
C
= 300A
R
G
= 1.8
8.55
10.5
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
600
V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
150
400
I
RM
V
R
=600V
µA
I
F
300
1.5
1.4
A
V
I
F
= 300A
V
GE
= 0V
1.9
V
F
Diode Forward Voltage
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
130
t
rr
Q
rr
E
r
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
225
13.5
28.5
3.5
I
F
= 300A
V
R
= 300V
di/dt =3100A/µs
7.1
2 – 6
APTGT300DU60G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.13
0.21
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
3
175
125
100
5
3.5
300
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
SP6 Package outline
(dimensions in mm)
3 – 6
APTGT300DU60G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
Output Characteristics
600
500
400
300
200
100
0
600
500
400
300
200
100
0
T
J
= 150°C
V
GE
=13V
V
GE
=19V
V
GE
=15V
T
J
=150°C
V
GE
=9V
T
J
=25°C
1.5
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
2
2.5
V
CE
(V)
V
CE
(V)
Energy losses vs Collector Current
Transfert Characteristics
600
500
400
300
200
100
0
20
V
CE
= 300V
Eoff
T
J
=25°C
17.5
15
V
GE
= 15V
R
G
= 1.8
Ω
T
J
= 150°C
Er
12.5
10
T
J
=125°C
7.5
5
T
J
=150°C
T
J
=25°C
2.5
0
Eon
0
100 200 300 400 500 600
C
(A)
5
6
7
8
9
10
11
I
V
GE
(V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
20
700
600
500
400
300
200
100
0
V
CE
= 300V
Eoff
V
GE
=15V
I
C
= 300A
J
= 150°C
15
10
5
Eon
T
V
GE
=15V
T
J
=150°C
R
G
=1.8
Ω
Er
Eon
4
0
0
2
6
8
10
12
0
100 200 300 400 500 600 700
V
CE
(V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.14
0.12
0.1
IGBT
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 6
APTGT300DU60G
Operating Frequency vs Collector Current
Forward Characteristic of diode
600
500
400
300
200
100
0
120
100
80
60
40
20
0
V
CE
=300V
D=50%
R
G
=1.8
Ω
T
J
=150°C
T
c
=85°C
ZVS
ZCS
T
J
=125°C
T
J
=150°C
Hard
switching
T
J
=25°C
0
0.4
0.8
1.2
F
(V)
1.6
2
0
100
200
300
C
(A)
400
500
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
0.15
0.1
0.05
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
5 – 6
APTGT300DU60G
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transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
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authorized personnel of Microsemi.
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property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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new proposed specific part.
6 – 6
