Microchip-Tech-APTLGT400A608G
| Part # | Microchip-Tech-APTLGT400A608G |
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APTLGT400A608G
V
CES
= 600V
I
C
= 400A @ Tc = 80°C
Phase leg
Intelligent Power Module
Application
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
Non Punch Through (NPT) FAST IGBT
–
–
–
–
–
–
Low voltage drop
Low tail current
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA & SCSOA rated
Integrated Fail Safe IGBT Protection (Driver
)
–
–
Top Bottom input signals Interlock
Isolated DC/DC Converter
Low stray inductance
M5 power connectors
High level of integration
Benefits
VBUS
0/VBUS
OUT
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very high noise immunity
(common mode rejection > 25kV/µs)
Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
5V logic level with Schmitt-trigger Input
Single V
DD
=5V supply required
Secondary auxiliary power supplies internally generated
(15V, -6V)
Optocoupler qualified to AEC-Q100 test guidelines
RoHS compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 7
APTLGT400A608G
All ratings @ T
j
= 25°C unless otherwise specified
1. Inverter
Power Module
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
V
V
CES
Collector – Emitter Breakdown Voltage
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
600
400
800
1250
I
C
Continuous Collector Current
A
I
CM
P
D
Pulsed Collector Current
Maximum Power Dissipation
W
RBSOA Reverse
Bias Safe Operating Area
T
j
= 150°C
800A@550V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
0.3
V
GE
= 0V
I
CES
Zero Gate Voltage Collector Current
mA
V
CE
= 600V
1
1.5
1.7
1.9
V
DD
= V
IN
= 5V
I
C
= 400A
V
CE(sat)
Collector Emitter Saturation Voltage
V
T
j
= 150°C
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
24
1.6
0.8
V
GE
= 0V
V
CE
= 25V
nF
ns
f = 1MHz
Inductive Switching (25°C)
T
r
T
f
Rise Time
Fall Time
45
55
V
DD
= V
IN
= 5V
V
Bus
= 300V ; I
C
= 400A
Inductive Switching (125°C)
T
r
T
f
Rise Time
25
70
ns
V
V
DD
= V
IN
= 5V
Bus
= 300V
Fall Time
E
on
Turn-on Switching Energy
3.5
I
C
= 400A
mJ
E
off
Turn-off Switching Energy
14
V
DD
= V
IN
= 5V; V
Bus
=360V
I
sc
Short Circuit data
2000
A
t
p
≤
6µs ; T
j
= 150°C
R
thJC
Junction to Case thermal resistance
0.12 °C/W
2 – 7
APTLGT400A608G
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
I
RM
I
F
600
V
µA
A
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
350
500
V
R
=600V
400
1.6
1.5
2
V
F
Diode Forward Voltage
I
F
= 400A
V
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
125
220
19
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 400A
V
R
= 300V
di/dt =4800A/µs
Q
rr
µC
mJ
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
40
4.4
9.6
E
rr
Reverse Recovery Energy
R
thJC
Junction to Case thermal resistance
0.20 °C/W
2. Driver
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
DD
V
INi
Supply Voltage
Input signal voltage i=L, H
5.5
5.5
0.35
2
V
V
INi
= 0V, i =L & H
V
DD
=5V, V
INH
= /V
INL
;
F
out
= 45kHz
I
VDDmax
f
max
Maximum Supply current
A
kHz
Maximum Switching Frequency
45
Driver Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
4.5
Typ
5
Max
5.5
5.5
Unit
V
V
DD
Operating Supply Voltage
Maximum Input Voltage
Positive Going Threshold Voltage
V
INi(max)
V
INi (th+)
-0.5
5
V
3.2
i = L, H
V
INi(th-)
Negative Going Threshold Voltage
1
1
R
INi
T
d(on)
D
T
Input Resistance *
Turn On delay time
Built in dead time
k
Ω
Driver + IGBT
Driver + IGBT
1100
600
750
ns
T
d(off)
PWD
Turn Off delay time
Pulse Width Distortion
Propagation Delay Difference
between any two driver
Primary to Secondary Isolation
300
350
ns
PDD
V
ISOL
T
d(on)
– T
d(off)
-350
2500
V
RMS
* Low impedance guarantees good noise immunity.
3 – 7
APTLGT400A608G
3. Package
characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
V
ISOL
T
J
T
OP
T
STG
T
C
4000
-40
-40
-40
-40
2
V
Operating junction temperature range
Operating Ambient Temperature
Storage Temperature Range
150
85
100
100
4.7
4
°C
Operating Case Temperature
To heatsink
For terminals
M5
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
550
4. LP8
Package outline
(dimensions in mm)
4 – 7
APTLGT400A608G
Typical IGBT Performance Curve
Output Characteristics (V
GE
=15V)
Reverse Bias Safe Operating Area
800
1000
T
J
=25°C
700
800
600
400
200
0
600
T
J
=150°C
500
400
300
V
DD
= 5V
IN
= 5V
200
V
T
J
=150°C
100
0
T
J
=25°C
0
0.5
1
1.5
2
2.5
3
0
100 200 300 400 500 600 700
V
CE
(V)
V
CE
(V)
Operating Frequency vs Collector Current
Energy losses vs Collector Current
50
40
30
20
10
0
24
18
12
6
V
CE
= 300V
Eoff
V
CE
= 300V
D = 50%
V
V
DD
= 5V
IN
= 5V
V
V
DD
= 5V
IN
= 5V
T
J
= 150°C
T
J
= 150°C
Limited by
internal gate
drive power
dissipation
T
C
=85°C
Eon
Hard
switching
0
0
100 200 300 400 500 600 700 800
0
100
200
300
I
C
(A)
400
500
I
C
(A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.08
0.04
0
D = 0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
5 – 7
APTLGT400A608G
Typical diode Performance Curve
Forward Characteristic of diode
Energy losses vs Collector Current
800
16
V
R
= 300V
T
J
= 150°C
700
600
500
400
12
8
300
T
J
=150°C
200
4
100
T
J
=25°C
0
0
0
200
400
600
800
0
0.4
0.8
1.2
1.6
2
2.4
I
F
(A)
V
F
(V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.24
0.2
D = 0.9
0.7
0.16
0.12
0.08
0.04
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
6 – 7
APTLGT400A608G
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otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
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without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
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