Microchip-Tech-APTM100DAM90G
| Part # | Microchip-Tech-APTM100DAM90G |
Download  | Microchip-Tech-APTM100DAM90G |
APTM100DAM90G
V
DSS
= 1000V
Boost chopper
MOSFET Power Module
R
DSon
= 90m
typ @ Tj = 25°C
I
D
= 78A @ Tc = 25°C
VBUS
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
OUT
Features
Power MOS 7
®
MOSFETs
Q2
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
G2
S2
Kelvin source for easy drive
Very low stray inductance
0/VBUS
–
–
Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
DSS
Drain – Source Breakdown Voltage
1000
78
59
V
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
Maximum Power Dissipation
312
±30
105
1250
25
V
m
W
P
D
I
AR
E
AR
E
AS
T
c
= 25°C
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
50
3000
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 7
APTM100DAM90G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
GS
= 0V,V
DS
= 1000V
T
j
= 25°C
400
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V,V
DS
= 800V
V
GS
= 10V, I
D
= 39A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
T
j
= 125°C
2000
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
GSS
90
105
5
±250 nA
m
V
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
20.7
3.5
0.64
V
GS
= 0V
V
DS
= 25V
nF
f = 1MHz
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
744
96
V
GS
= 10V
V
Bus
= 500V
nC
I
D
= 78A
488
18
Inductive switching @ 125°C
V
GS
= 15V
12
V
Bus
= 670V
ns
T
d(off)
Turn-off Delay Time
155
40
I
D
= 78A
R
G
=1.2
T
f
Fall Time
Inductive switching @ 25°C
E
on
Turn-on Switching Energy
3.6
2.5
5.7
3.1
V
GS
= 15V, V
Bus
= 670V
mJ
mJ
E
off
E
on
E
off
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
I
D
= 78A, R
G
= 1.2
Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 78A, R
G
= 1.2
Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
V
RRM
I
RM
1000
V
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
250
500
Maximum Reverse Leakage Current
DC Forward Current
V
R
=1000V
µA
I
F
100
1.9
2.2
1.7
A
V
I
F
= 100A
I
F
= 200A
I
F
= 100A
2.5
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
300
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 100A
V
R
= 670V
di/dt = 200A/µs
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
360
800
Q
rr
nC
4050
2 – 7
APTM100DAM90G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.1
0.55
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
3
150
125
100
5
3.5
300
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
SP6 Package outline
(dimensions in mm)
v
3 – 7
APTM100DAM90G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
240
200
160
120
80
320
280
240
200
160
120
80
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=15, 10&8V
7V
250µs pulse test @ < 0.5 duty cycle
6.5V
6V
T
J
=25°C
5.5V
5V
40
40
T
J
=125°C
T
J
=-55°C
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
R
DS(on)
vs Drain Current
1.4
1.3
1.2
1.1
1
80
70
60
50
40
30
20
10
0
Normalized to
V
GS
=10V @ 39A
V
GS
=10V
V
GS
=20V
0.9
0.8
0
40
80
120 160 200 240
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 7
APTM100DAM90G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
V
GS
=10V
I
D
=39A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by R
DS
on
1ms
Single pulse
T
J
=150°C
T
C
=25°C
10ms
1
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
V
DS
=200V
V
DS
=500V
I
D
=78A
Ciss
T
J
=25°C
10000
1000
100
Coss
V
DS
=800V
6
Crss
4
2
0
0
200
400
600
800
1000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APTM100DAM90G
Delay Times vs Current
Rise and Fall times vs Current
80
60
40
20
0
200
160
120
80
V
DS
=670V
t
f
R
G
=1.2
Ω
T
J
=125°C
L=100µH
t
d(off)
V
DS
=670V
R
G
=1.2
Ω
T
J
=125°C
L=100µH
t
r
t
d(on)
40
0
20 40 60 80
100 120 140 160
20
40
60
80 100
120 140 160
I
D
, Drain Current (A)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
14
12
10
8
10
8
V
DS
=670V
I
D
=78A
E
off
V
DS
=670V
E
on
R
G
=1.2
Ω
T
J
=125°C
L=100µH
T
J
=125°C
L=100µH
E
off
6
E
on
6
4
4
E
off
2
2
0
0
20 40 60 80
100 120 140 160
0
2
4
6
8
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
200
150
100
50
ZVS
T
J
=150°C
T
J
=25°C
ZCS
V
DS
=670V
D=50%
R
G
=1.2
Ω
T
J
=125°C
Hard
T
C
=75°C
switching
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
0
10 20 30 40 50 60 70
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
6 – 7
APTM100DAM90G
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
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Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
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Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
7 – 7
