Microchip-Tech-APTM100UM45FAG

APTM100UM45FAG  

V

DSS

= 1000V  

R

DSon

= 45m

Ω

typ @ Tj = 25°C  

I

D

= 215A @ Tc = 25°C  

Single Switch  

MOSFET Power Module  

Application  

Welding converters  

SK  









Switched Mode Power Supplies  

Uninterruptible Power Supplies  

Motor control  

S

D

Features  



Power MOS 7

®

FREDFETs  

–

–

–

–

–

–

Low R

DSon  

Low input and Miller capacitance  

Low gate charge  

Fast intrinsic reverse diode  

Avalanche energy rated  

Very rugged  

DK  

G





Kelvin source for easy drive  

Very low stray inductance  

–

–

Symmetrical design  

M5 power connectors  





High level of integration  

AlN substrate for improved thermal performance  

Benefits  



Outstanding performance at high frequency  

operation  









Direct mounting to heatsink (isolated package)  

Low junction to case thermal resistance  

Low profile  

RoHS Compliant  

Absolute maximum ratings  

Symbol  

Parameter  

Max ratings  

1000  

215  

Unit  

V

V

DSS  

Drain – Source Breakdown Voltage  

T

c

= 25°C  

T

c

= 80°C  

I

D  

Continuous Drain Current  

A

160  

I

DM  

V

GS  

R

DSon  

Pulsed Drain current  

Gate – Source Voltage  

Drain – Source ON Resistance  

860  

±30  

52  

V

m



 

W

P

D  

I

AR  

E

AR  

E

AS  

Maximum Power Dissipation  

T

c

= 25°C  

5000  

30  

50  

Avalanche current (repetitive and non repetitive)  

Repetitive Avalanche Energy  

Single Pulse Avalanche Energy  

A

mJ  

3200  

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  

1 – 7  

APTM100UM45FAG  

All ratings @ T

j

= 25°C unless otherwise specified  

Electrical Characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max

 

Unit  

T

j

= 25°C  

V

GS

= 0V,V

DS

= 1000V  

600  

3

µA  

mA  

I

DSS  

Zero Gate Voltage Drain Current  

T

j

= 125°C  

V

GS

= 0V,V

DS

= 800V  

R

DS(on)

Drain – Source on Resistance  

V

GS(th)

Gate Threshold Voltage  

V

GS

= 10V, I

D

= 107.5A  

V

GS

= V

DS

, I

D

= 30mA  

V

GS

= ±30 V, V

DS

= 0V  

45  

52  

5

m

  

V

3

I

GSS  

Gate – Source Leakage Current  

±600 nA  

Dynamic Characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max

 

Unit  

C

iss  

C

oss  

C

rss  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

42.7  

7.6  

1.3  

V

V

DS

= 25V  

f = 1MHz  

nF  

Q

g  

Q

gs  

Q

gd  

Total gate Charge  

1602  

204  

V

GS

= 10V  

Gate – Source Charge  

Gate – Drain Charge  

V

Bus

= 500V  

nC  

I

D

= 215A  

1038  

Inductive switching @ 125°C  

T

d(on)  

T

r  

Turn-on Delay Time  

Rise Time  

18  

14  

V

GS

= 15V  

V

Bus

= 670V  

I

D

= 215A  

R

G

= 0.5

  

ns  

T

d(off)

Turn-off Delay Time  

140  

55  

T

f  

Fall Time  

Inductive switching @ 25°C  

E

on  

E

off  

E

on  

E

off  

Turn-on Switching Energy  

Turn-off Switching Energy  

Turn-on Switching Energy  

Turn-off Switching Energy  

7.2  

4.3  

12  

mJ  

mJ  

V

GS

= 15V, V

Bus

= 670V  

I

D

= 215A, R

G

= 0.5

Ω

 

Inductive switching @ 125°C  

V

GS

= 15V, V

Bus

= 670V  

5.8  

I

D

= 215A, R

G

= 0.5

Ω  

Source – Drain diode ratings and characteristics  

Symbol Characteristic  

Test Conditions  

Min Typ Max

 

Unit  

I

S  

Continuous Source current  

(Body diode)  

Tc = 25°C  

Tc = 80°C  

215  

160  

A

V

SD  

Diode Forward Voltage  

V

GS

= 0V, I

S

= – 215A  

1.3  

18  

V

V/ns  

dv/dt Peak

 

Diode Recovery



 

T

j

= 25°C  

T

j

= 125°C  

T

j

= 25°C  

T

j

= 125°C  

310  

625  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

ns  

I

S

= – 215A  

V

R

= 670V  

di

S

/dt = 600A/µs  

12  

36  

Q

rr  

µC  



dv/dt numbers reflect the limitations of the circuit rather than the device itself.  

I

S



– 215A

 

di/dt



700A/µs  

V

R



V

DSS  

T

j



150°C  

2 – 7  

APTM100UM45FAG  

Thermal and package characteristics  

Symbol Characteristic  

Min Typ Max Unit  

R

thJC  

V

ISOL  

T

J  

T

STG  

T

C  

Junction to Case Thermal Resistance  

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz  

Operating junction temperature range  

Storage Temperature Range  

0.025 °C/W  

4000  

-40  

-40  

-40  

3

V

150  

125  

100  

5

3.5  

300  

°C  

Operating Case Temperature  

To Heatsink  

For teminals  

M6  

M5  

Torque Mounting

 

torque  

Wt Package

 

Weight  

N.m  

g

2

SP6 Package outline

(dimensions in mm)  

3 – 7  

APTM100UM45FAG  

Typical Performance Curve  

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  

0.03  

0.025  

0.02  

0.015  

0.01  

0.005  

0

0.9  

0.7  

0.5  

0.3  

Single Pulse  

0.1  

0.05  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

rectangular Pulse Duration (Seconds)  

Low Voltage Output Characteristics  

Transfert Characteristics  

540  

480  

420  

360  

300  

240  

180  

120  

60  

720  

600  

480  

360  

240  

120  

0

V

DS

> I

D

(on)xR

DS

(on)MAX  

V

GS

=15, 10V  

250µs pulse test @ < 0.5 duty cycle  

7V  

6.5V  

6V  

T

J

=25°C  

5.5V  

5V  

T

J

=125°C  

T

J

=-55°C  

0

0

5

10  

15  

20  

25  

30  

0

1

2

3

4

5

6

7

8

V

V

DC Drain Current vs Case Temperature  

R

DS(on)

vs Drain Current  

1.4  

1.3  

1.2  

1.1  

1

240  

210  

180  

150  

120  

90  

Normalized to  

V

V

GS

=10V  

V

GS

=20V  

60  

0.9  

0.8  

30  

0

0

120  

240  

360  

480  

25  

50  

75  

100  

125  

150  

I

D

, Drain Current (A)  

T

C

, Case Temperature (°C)  

4 – 7  

APTM100UM45FAG  

Breakdown Voltage vs Temperature  

ON resistance vs Temperature  

2.5  

1.15  

1.10  

1.05  

1.00  

0.95  

0.90  

0.85  

V

GS

=10V  

I

D

=107.5A  

2.0  

1.5  

1.0  

0.5  

0.0  

-50 -25  

0

25 50 75

 

100 125 150  

-50 -25  

0

25 50 75

 

100 125 150  

T

J

, Junction Temperature (°C)  

T

J

, Junction Temperature (°C)  

Threshold Voltage vs Temperature  

Maximum Safe Operating Area  

1000  

100  

10  

1.2  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

100µs  

limited by R

DS

on  

1ms  

10ms  

Single pulse  

T

J

=150°C  

T

C

=25°C  

1

-50 -25  

0

25 50 75

 

100 125 150  

1

10  

100  

1000  

V

DS

, Drain to Source Voltage (V)  

T

C

, Case Temperature (°C)  

Capacitance vs Drain to Source Voltage  

Gate Charge vs Gate to Source Voltage  

14  

12  

10  

8

100000  

Ciss  

V

DS

=200V  

V

DS

=500V  

I

D

=215A  

T

J

=25°C  

Coss  

10000  

1000  

100  

V

DS

=800V  

6

Crss  

4

2

0

0

350 700

 

1050 1400 1750 2100  

0

10  

20  

30  

40  

50  

V

Gate Charge (nC)  

5 – 7  

APTM100UM45FAG  

Delay Times vs Current  

Rise and Fall times vs Current  

100  

150  

120  

90  

60  

30  

0

V

DS

=670V  

t

f  

R

G

=0.5

Ω

 

80  

t

d(off)  

T

J

=125°C  

L=100µH  

60  

V

DS

=670V  

R

G

=0.5

Ω  

T

J

=125°C  

L=100µH  

40  

t

r  

t

d(on)  

20  

0

80 120

 

160 200 240 280 320 360 400  

80 120

 

160 200 240 280 320 360 400  

I

D

, Drain Current (A)  

I

D

, Drain Current (A)  

Switching Energy vs Gate Resistance  

Switching Energy vs Current  

24  

20  

16  

12  

8

V

DS

=670V  

36  

V

DS

=670V  

E

on  

E

off  

I

D

=215A  

R

G

=0.5

Ω  

T

J

=125°C  

L=100µH  

30  

24  

18  

12  

6

T

J

=125°C  

L=100µH  

E

off  

E

on  

E

off  

4

0

0

80 120

 

160 200 240 280 320 360 400  

0

1

2

3

4

5

6

I

D

, Drain Current (A)  

Gate Resistance (Ohms)  

Operating Frequency vs Drain Current  

Source to Drain Diode Forward Voltage  

300  

250  

200  

150  

100  

50  

1000  

100  

10  

T

J

=150°C  

ZVS  

ZCS  

T

J

=25°C  

V

DS

=670V  

D=50%  

R

G

=0.5

Ω  

T

J

=125°C  

Hard  

switching  

T

C

=75°C  

1

0

0.2 0.4 0.6 0.8  

1

1.2 1.4 1.6 1.8  

20  

50  

80  

110 140 170 200  

I

D

, Drain Current (A)  

V

6 – 7  

APTM100UM45FAG  

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The information contained in the document (unless it is publicly available on the Web without access restrictions) is  

PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,  

transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the  

recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement  

will also apply.

 

This document and the information contained herein may not be modified, by any person other than  

authorized personnel of Microsemi.

 

No license under any patent, copyright, trade secret or other intellectual

 

property  

right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,  

inducement, estoppels or

 

otherwise. Any

 

license under such intellectual property rights must be approved by  

Microsemi in writing signed by an officer of Microsemi.  

Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime  

without any notice.

 

This product has been subject to limited testing and should not be used in conjunction with life-  

support or other mission-critical equipment or applications.

 

Microsemi assumes no liability whatsoever, and Microsemi  

disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or  

warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other  

intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or  

user must conduct and complete all performance and other testing of this product as well as any user or customers final  

application. User or customer shall not rely on any data and performance specifications or parameters provided by  

Microsemi. It

 

is the customer’s and user’s responsibility to independently determine suitability of any Microsemi  

product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all  

faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims  

any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product  

Life Support Application  

Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,  

aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other  

application in which the failure of the Seller’s Product could create a situation where personal injury, death or property  

damage or loss may occur (collectively “Life Support Applications”).  

Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive  

testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,  

subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and  

expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage  

or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations  

that Seller was negligent regarding the design or manufacture of the goods.  

Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with  

Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the  

new proposed specific part.  

7 – 7