Microchip-Tech-APTM100UM65DAG
| Part # | Microchip-Tech-APTM100UM65DAG |
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APTM100UM65DAG
V
DSS
= 1000V
R
DSon
= 65m
Ω
typ @ Tj = 25°C
I
D
= 145A @ Tc = 25°C
Single switch
with Series diode
MOSFET Power Module
Application
Zero Current Switching resonant mode
Features
Power MOS 7
®
MOSFETs
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Very low stray inductance
–
–
Symmetrical design
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
1000
145
Unit
V
V
DSS
Drain – Source Breakdown Voltage
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
110
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
580
±30
78
V
m
W
P
D
I
AR
E
AR
E
AS
Maximum Power Dissipation
T
c
= 25°C
3250
30
50
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 7
APTM100UM65DAG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
T
j
= 25°C
V
GS
= 0V,V
DS
= 1000V
V
GS
= 0V,V
DS
= 800V
400
µA
mA
I
DSS
Zero Gate Voltage Drain Current
T
j
= 125°C
2
78
5
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
GSS
V
GS
= 10V, I
D
= 72.5A
V
GS
= V
DS
, I
D
= 20mA
V
GS
= ±30 V, V
DS
= 0V
65
m
V
3
Gate – Source Leakage Current
±400 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
28.5
5.08
0.9
V
GS
= 0V
V
DS
= 25V
nF
f = 1MHz
Q
g
Q
gs
Q
gd
Total gate Charge
1068
136
V
GS
= 10V
Gate – Source Charge
Gate – Drain Charge
V
Bus
= 500V
nC
I
D
= 145A
692
T
d(on)
T
r
Turn-on Delay Time
Rise Time
18
14
V
GS
= 15V
V
Bus
= 500V
ns
I
D
= 145A
R
G
= 0.75
T
d(off)
Turn-off Delay Time
140
55
T
f
Fall Time
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 145A, R
G
= 0.75
Ω
E
on
E
off
E
on
E
off
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
4.8
2.9
8
mJ
mJ
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 670V
3.9
I
D
= 145A, R
G
= 0.75
Ω
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
V
RRM
1000
V
T
j
= 25°C
750
I
RM
V
R
=1000V
µA
T
j
= 125°C
Tc = 80°C
1000
I
F
240
A
V
I
F
= 240A
I
F
= 480A
I
F
= 240A
2
2.2
1.7
2.5
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
280
350
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 240A
V
R
= 667V
di/dt = 800A/µs
3.04
14.4
Q
rr
µC
2 – 7
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Series diode
0.038
0.23
R
thJC
Junction to Case Thermal Resistance
°C/W
V
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
3
T
J
T
STG
T
C
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
150
125
100
5
3.5
300
°C
To Heatsink
For teminals
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
SP6 Package outline
(dimensions in mm)
3 – 7
APTM100UM65DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
360
320
280
240
200
160
120
80
480
400
320
240
160
80
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=15, 10V
250µs pulse test @ < 0.5 duty cycle
7V
6.5V
6V
T
J
=25°C
5.5V
5V
T
J
=125°C
40
T
J
=-55°C
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
R
DS(on)
vs Drain Current
1.4
1.3
1.2
1.1
1
160
120
80
40
0
Normalized to
GS
=10V @ 72.5A
V
V
GS
=10V
V
GS
=20V
0.9
0.8
0
80
160
240
320
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 7
APTM100UM65DAG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
V
GS
=10V
I
D
=72.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by R
DS
on
1ms
10ms
Single pulse
T
J
=150°C
T
C
=25°C
1
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
V
DS
=200V
V
DS
=500V
I
D
=145A
T
J
=25°C
Ciss
10000
1000
100
Coss
V
DS
=800V
6
Crss
4
2
0
0
300
600
900
1200 1500
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APTM100UM65DAG
Delay Times vs Current
Rise and Fall times vs Current
100
160
120
80
40
0
V
DS
=670V
t
d(off)
t
f
R
G
=0.75
Ω
80
T
J
=125°C
L=100µH
60
V
DS
=670V
R
G
=0.75
Ω
T
J
=125°C
L=100µH
40
t
r
t
d(on)
20
0
50
94
138
182
226
270
50
94
138
182
226
270
I
D
, Drain Current (A)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
26
22
18
14
10
6
16
14
12
10
8
V
DS
=670V
V
DS
=670V
I
D
=145A
E
off
T
J
=125°C
E
on
R
G
=0.75
Ω
T
J
=125°C
L=100µH
L=100µH
E
off
E
on
6
4
2
E
off
0
2
50
94
138
182
226
270
0
1
2
3
4
5
6
7
8
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
300
1000
250
200
150
100
50
ZCS
T
J
=150°C
100
10
1
T
J
=25°C
V
DS
=670V
D=50%
R
G
=0.75
Ω
T
J
=125°C
Hard
T
C
=75°C
switching
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
15
35
55
75
95
115 135
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
6 – 7
APTM100UM65DAG
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property
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inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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new proposed specific part.
7 – 7
