Microchip-Tech-APTM10UM02FAG
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APTM10UM02FAG
V
DSS
= 100V
Single Switch
MOSFET Power Module
R
DSon
= 2.25m
typ @ Tj = 25°C
I
D
= 570A* @ Tc = 25°C
Application
SK
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
S
D
Features
Power MOS V
®
FREDFETs
–
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Fast intrinsic diode
Very rugged
DK
G
Kelvin source for easy drive
Very low stray inductance
–
–
Symmetrical design
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
100
Unit
V
V
DSS
Drain – Source Breakdown Voltage
T
c
= 25°C
T
c
= 80°C
570 *
429
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
1900
±30
2.5
V
m
W
P
D
I
AR
E
AR
E
AS
Maximum Power Dissipation
T
c
= 25°C
1660
100
50
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
3000
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 7
APTM10UM02FAG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25°C
T
j
= 125°C
400
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V,V
DS
= 80V
2000
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
V
GS
= 10V, I
D
= 200A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
2.25
2.5
4
±400 nA
m
V
2
I
GSS
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
40
15.7
5.9
V
GS
= 0V
V
DS
= 25V
f = 1MHz
nF
Q
g
Q
gs
Q
gd
Total gate Charge
1360
240
V
GS
= 10V
Gate – Source Charge
Gate – Drain Charge
V
Bus
= 50V
nC
I
D
= 400A
720
Inductive switching
T
d(on)
T
r
Turn-on Delay Time
Rise Time
160
240
500
160
V
GS
= 15V
V
Bus
= 66V
I
D
= 400A
R
G
= 1.25
ns
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Inductive switching @ 25°C
GS
= 15V, V
Bus
= 66V
I
D
= 400A, R
G
=1.25
Ω
E
on
E
off
E
on
E
off
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
2.2
mJ
mJ
V
2.41
2.43
2.56
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 400A, R
G
= 1.25
Ω
Source – Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
I
S
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
570*
429
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= – 400A
1.3
5
V
V/ns
dv/dt Peak
Diode Recovery
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
190
370
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
S
= – 400A
V
R
= 66V
di
S
/dt = 400A/µs
1.6
6.8
Q
rr
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
– 570A
di/dt
400A/µs V
R
V
DSS
T
j
150°C
2 – 7
APTM10UM02FAG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
V
ISOL
T
J
T
STG
T
C
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
0.075 °C/W
4000
-40
-40
-40
3
V
150
125
100
5
3.5
300
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
SP6 Package outline
(dimensions in mm)
3 – 7
APTM10UM02FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
2500
2000
1500
1000
500
480
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=15V, 10V & 9V
400
250µs pulse test @ < 0.5 duty cycle
320
240
8V
7V
160
T
J
=25°C
6V
80
T
J
=125°C
T
J
=-55°C
0
0
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
600
R
DS(on)
vs Drain Current
1.2
1.1
1
Normalized to
GS
=10V @ 200A
V
500
400
300
200
100
0
V
GS
=10V
V
GS
=20V
0.9
0.8
0
100
200
300
400
500
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 7
APTM10UM02FAG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
V
GS
=10V
I
D
= 200A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000
1000
100
10
limited by
R
DSon
100µs
1ms
10ms
Single pulse
T
J
=150°C
T
C
=25°C
1
-50 -25
0
25 50 75
100 125 150
1
10
DS
, Drain to Source Voltage (V)
100
V
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
16
I
D
=400A
V
DS
=20V
14
Ciss
T
J
=25°C
12
V
DS
=50V
10
Coss
Crss
V
DS
=80V
10000
1000
8
6
4
2
0
0
400
800
1200 1600 2000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APTM10UM02FAG
Delay Times vs Current
Rise and Fall times vs Current
300
600
500
400
300
200
100
0
250
t
r
t
d(off)
200
V
DS
=66V
R
G
=1.25
Ω
T
J
=125°C
L=100µH
t
f
150
V
DS
=66V
t
d(on)
100
50
0
R
G
=1.25
Ω
T
J
=125°C
L=100µH
50
150 250 350 450 550 650
50
150 250 350 450 550 650
I
D
, Drain Current (A)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
9
8
7
6
5
4
3
2
1
5
4
3
2
1
0
V
DS
=66V
I
D
=400A
V
DS
=66V
E
off
R
G
=1.25
Ω
T
J
=125°C
L=100µH
E
off
T
J
=125°C
L=100µH
E
on
E
on
E
off
50
150 250 350 450 550 650
0
2.5
5
7.5
10
12.5
15
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
60
50
40
30
20
10
0
1000
100
10
T
J
=150°C
ZVS
T
J
=25°C
V
DS
=66V
ZCS
D=50%
R
G
=1.25
Ω
Hard
T
J
=125°C
switching
T
C
=75°C
1
150
250
350
450
550
0.3
0.5
0.7
0.9
1.1
1.3
1.5
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
6 – 7
APTM10UM02FAG
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
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Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
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Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
7 – 7
