Microchip-Tech-APTM20DAM04G
| Part # | Microchip-Tech-APTM20DAM04G |
Download  | Microchip-Tech-APTM20DAM04G |
APTM20DAM04G
V
DSS
= 200V
DSon
= 4m
typ @ Tj = 25°C
I
D
= 372A @ Tc = 25°C
Boost chopper
MOSFET Power Module
R
Application
AC and DC motor control
VBUS
CR1
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
Power MOS 7
®
MOSFETs
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
G2
S2
0/VBUS
Kelvin source for easy drive
Very low stray inductance
–
–
Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
DSS
Drain – Source Breakdown Voltage
200
372
278
1488
±30
5
V
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
V
m
W
P
D
I
AR
E
AR
E
AS
Maximum Power Dissipation
T
c
= 25°C
1250
100
50
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
1 – 7
APTM20DAM04G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
GS
= 0V,V
DS
= 200V
T
j
= 25°C
500
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V,V
DS
= 160V
T
j
= 125°C
V
GS
= 10V, I
D
= 186A
V
GS
= V
DS
, I
D
= 10mA
2000
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
4
5
5
m
V
3
I
GSS
Gate – Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
±200 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
28.9
9.32
0.58
V
GS
= 0V
V
DS
= 25V
nF
f = 1MHz
Q
g
Total gate Charge
560
212
V
GS
= 10V
V
Bus
= 100V
nC
Q
gs
Gate – Source Charge
I
D
= 372A
Q
gd
T
d(on)
T
r
Gate – Drain Charge
Turn-on Delay Time
Rise Time
268
32
Inductive switching @ 125°C
V
GS
= 15V
64
V
Bus
= 133V
I
D
= 372A
ns
T
d(off)
Turn-off Delay Time
88
R
G
= 1.2
T
f
Fall Time
116
Inductive switching @ 25°C
E
on
Turn-on Switching Energy
3396
3716
3744
3944
V
GS
= 15V, V
Bus
= 133V
µJ
µJ
E
off
E
on
E
off
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
I
D
= 372A, R
G
= 1.2
Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 372A, R
G
= 1.2
Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
Maximum Peak Repetitive Reverse Voltage
V
RRM
I
RM
200
V
T
j
= 25°C
T
j
= 125°C
T
c
= 80°C
250
750
Maximum Reverse Leakage Current
DC Forward Current
V
R
=200V
µA
I
F
300
1
1.4
0.9
A
V
I
F
= 300A
I
F
= 600A
I
F
= 300A
1.1
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
60
110
600
2520
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 300A
V
R
= 133V
di/dt = 600A/µs
Q
rr
nC
2 – 7
APTM20DAM04G
Thermal and package characteristics
Symbol Characteristic
Min Typ
Max Unit
Transistor
Diode
0.1
0.2
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
STG
T
C
4000
-40
-40
-40
3
150
125
100
5
3.5
300
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
Wt Package
Weight
N.m
g
2
SP6 Package outline
(dimensions in mm)
3 – 7
APTM20DAM04G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.08
0.06
0.04
0.02
0
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
3000
2500
2000
1500
1000
500
1200
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=15V
10V
1000
250µs pulse test @ < 0.5 duty cycle
800
600
9V
8.5V
8V
400
7.5V
T
J
=25°C
7V
200
T
J
=125°C
6.5V
T
J
=-55°C
0
0
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
400
R
DS(on)
vs Drain Current
1.2
1.1
1
Normalized to
GS
=10V @ 186A
350
300
250
200
150
100
50
V
V
GS
=10V
V
GS
=20V
0.9
0.8
0
0
100 200 300 400 500 600
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 7
APTM20DAM04G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
V
GS
=10V
I
D
= 186A
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000
1000
100
10
limited by
R
DSon
100µs
1ms
Single pulse
T
J
=150°C
T
C
=25°C
10ms
100ms
1
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
I
D
=372A
T
J
=25°C
V
DS
=40V
V
DS
=100V
Ciss
12
10
8
Coss
10000
1000
100
V
DS
=160V
6
Crss
4
2
0
0
80 160
240 320 400 480 560 640
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APTM20DAM04G
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
120
100
80
60
40
20
0
V
DS
=133V
R
G
=1.2
Ω
T
J
=125°C
L=100µH
t
d(off)
t
f
V
DS
=133V
R
G
=1.2
Ω
T
J
=125°C
L=100µH
t
r
60
t
d(on)
40
20
0
0
100 200 300 400 500 600
0
100 200 300 400 500 600
I
D
, Drain Current (A)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
10
8
8
6
4
2
0
V
DS
=133V
I
D
=372A
V
DS
=133V
E
off
R
G
=1.2
Ω
T
J
=125°C
L=100µH
E
off
T
J
=125°C
L=100µH
E
on
6
E
on
4
E
off
2
0
100 200 300 400 500 600
0
2.5
5
7.5
10
12.5
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
T
J
=150°C
V
DS
=133V
D=50%
R
G
=1.2
Ω
T
J
=125°C
T
C
=75°C
T
J
=25°C
ZVS
ZCS
Hard
switching
0
1
50
100 150 200 250 300 350
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
6 – 7
APTM20DAM04G
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
Life Support Application
Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
7 – 7
