Microchip-Tech-APTM20DAM05G
| Part # | Microchip-Tech-APTM20DAM05G |
Download  | Microchip-Tech-APTM20DAM05G |
APTM20DAM05G
V
DSS
= 200V
R
DSon
= 5m
Ω
typ @ Tj = 25°C
MOSFET Power Module
I
D
= 317A @ Tc = 25°C
Application
V
B
US
CR1
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
OUT
F
e
atures
Q2
•
Power MOS 7
®
MOSFETs
–
–
–
–
–
Low R
DSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Ve
r
y rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Ve
r
y low stray inductance
–
–
Symmetrical design
M5 power connectors
•
High level of integration
VB
U
S
0/VBUS
OUT
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
200
Unit
V
DSS
Drain – Source Breakdown Voltage
V
T
c
= 25°C
317
I
D
Continuous Drain Current
A
T
c
= 80°C
237
I
DM
V
GS
R
DSon
P
D
Pulsed Drain current
1268
±30
Gate – Source Voltage
V
m
Ω
W
Drain – Source ON Resistance
M
a
x
i
m
um Power Dissipation
6
T
c
= 25°C
1136
I
AR
E
AR
E
AS
Avalanche current (repetitive and non repetitive)
89
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
1 – 6
APTM20DAM05G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
GS
= 0V
,
V
DS
= 200V
T
j
= 25°C
400
2000
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V
,
V
DS
= 160V
T
j
=
125°C
V
GS
= 10V, I
D
= 158.5A
V
GS
= V
DS
, I
D
= 10mA
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
G
S S
5
6
5
m
Ω
V
nA
3
Gate – Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
±200
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
i
s
s
C
oss
C
r
s
s
Input Capacitance
27.4
V
GS
= 0V
V
DS
= 25V
f = 1MHz
nF
Output Capacitance
8.72
0.38
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Total gate Charge
448
172
188
28
56
81
V
GS
= 10V
V
Bus
= 100V
I
D
= 300A
nC
Gate – Source Charge
Gate – Drain Charge
T
d(on)
Tu
r
n
-on Delay Time
T
r
Rise Time
T
d(off)
Tu
r
n
-off Delay Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
ns
I
D
= 300A
R
G
= 1.2
Ω
T
f
Fall Time
99
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 300A, R
G
= 1.2
Ω
E
on
Tu
r
n
-on Switching Energy
1852
1820
2432
2124
µJ
µJ
E
off
E
on
E
off
Tu
r
n
-off Switching Energy
Tu
r
n
-on Switching Energy
Tu
r
n
-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 300A, R
G
= 1.2
Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
RRM
I
RM
I
F
Maximum Peak Repetitive Reverse Voltage
200
V
µA
A
T
j
= 25°C
T
j
= 125°C
T
c
= 85°C
350
M
a
x
i
m
um Reverse Leakage Current
V
R
=200V
1000
DCForward Current
240
1.1
1.4
0.9
31
60
I
F
= 240A
I
F
= 480A
I
F
= 240A
1.15
V
F
Diode Forward Voltage
V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 240A
V
R
= 133V
di/dt = 800A/µs
240
1000
Q
rr
nC
2 – 6
APTM20DAM05G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.11
0.23
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
S
T
G
T
C
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
N.m
g
2
Wt
Package Weight
SP6 Package outline
(dimensions in mm)
3 – 6
APTM20DAM05G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0
.
5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0
.
0001
0
.
001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
800
600
400
200
0
1000
800
600
400
200
0
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
V
G
S
=15&10V
9V
7.5V
7V
6.5V
6V
T
J
=25°C
T
J
=
1
25°C
T
J
=-55°C
5.5V
0
5
10
15
20
25
2
3
V
4
5
6
7
8
9
GS
, Gate to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
R
D
S
(on) vs Drain Current
1.2
1.15
1.1
320
280
240
200
160
120
80
Normalized to
V
GS
=10V @ 158.5A
V
G
S
=10V
1.05
1
V
G
S
=
2
0V
0.95
0.9
40
0
0
100
200
300
400
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 6
APTM20DAM05G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
V
G
S
=10V
I
D
= 158.5A
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
10000
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited
by R
DSon
100µs
1ms
10ms
Single pulse
T
J
=150°C
T
C
=25°C
DC line
1
–
5
0 -25
0
25 50 75
100 125 150
1
10
100
1000
T
C
, Case Temperature (°C)
V
DS
, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
V
DS
=40V
V
DS
=100V
I
D
=300A
T
J
=25°C
Ciss
10
8
Coss
10000
1000
100
V
D
S
=160V
6
4
Crss
2
0
0
100
200
300
400
500
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APTM20DAM05G
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
90
80
70
60
50
40
30
20
10
V
DS
=
1
33V
R
G
=
1
.2
Ω
T
J
=125°C
L=100µH
t
f
td
(o
f
f
)
V
DS
=133V
R
G
=1.2
Ω
T
J
=125°C
L
=
1
00µH
t
r
60
40
td
(on)
450
20
0
50
150
250
350
550
50
150
250
350
450
550
I
D
, Drain Current (A)
I
D
, Drain Current (
A
)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5
.
5
5
5
4
3
2
1
0
V
DS
=133V
I
D
=300A
T
J
=125°C
L=100µH
V
DS
=133V
R
G
=1.2
Ω
T
J
=
1
25°C
E
on
E
off
L=100µH
E
off
4
.
5
4
E
on
3
.
5
3
2
.
5
2
E
off
50
150
250
350
450
550
0
2.5
5
7.5
10 12.5 15
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
T
J
=150°C
ZVS
V
DS
=133V
Z
C
S
T
J
=25°C
D=50%
R
G
=1.2
Ω
T
J
=125°C
T
C
=75°C
Hard
Switching
1
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
30 70
110 150 190 230 270
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
Microsemi reserves the right to change,
w
i
thout notice, the specifications and information contained herein
Mi
c
rosemi’s products are covered by one or more of U.S patents 4,895,810
5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
and foreign patents.
U.S and Foreign patents pending.
All Rights Reserved.
6 – 6
