Microchip-Tech-APTM20SKM08TG
| Part # | Microchip-Tech-APTM20SKM08TG |
Download  | Microchip-Tech-APTM20SKM08TG |
APTM20SKM08TG
V
DSS
= 200V
R
DSon
= 8m
Ω
typ @ Tj = 25°C
MOSFET Power Module
I
D
= 208A @ Tc = 25°C
Application
VBUS
N
T
C
2
•
AC and DC motor control
Q1
•
F
e
atures
•
Switched Mode Power Supplies
G1
S1
Power MOS 7
®
MOSFETs
–
–
–
–
–
Low R
DSon
O
U
T
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Ve
r
y rugged
0/V
B
U
S SENSE
•
•
Kelvin source for easy drive
Ve
r
y low stray inductance
–
–
Symmetrical design
0/V
B
U
S
N
T
C
1
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
0/ VB US
OUT
OUT
SENSE
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/ VB US
S1
NTC2
NTC1
0/ VB US
SENSE
G1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
200
Unit
V
DSS
Drain – Source Breakdown Voltage
V
T
c
= 25°C
208
I
D
Continuous Drain Current
A
T
c
= 80°C
155
I
DM
V
GS
R
DSon
P
D
Pulsed Drain current
832
Gate – Source Voltage
±30
V
m
Ω
W
Drain – Source ON Resistance
M
a
x
i
m
um Power Dissipation
10
T
c
= 25°C
781
I
AR
E
AR
E
AS
Avalanche current (repetitive and non repetitive)
100
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
1 – 6
APTM20SKM08TG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
GS
= 0V
,
V
DS
= 200V
T
j
= 25°C
375
1500
10
5
±150
I
DSS
Zero Gate Voltage Drain Current
µA
V
GS
= 0V
,
V
DS
= 160V
T
j
= 125°C
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
G
S S
V
GS
= 10V, I
D
= 104A
8
m
Ω
V
nA
V
GS
= V
DS
, I
D
= 5mA
3
Gate – Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
i
s
s
C
oss
C
r
s
s
Input Capacitance
14.4
V
GS
= 0V
V
DS
= 25V
f = 1MHz
nF
Output Capacitance
4.66
0.29
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Total gate Charge
280
106
134
32
64
88
V
GS
= 10V
V
Bus
= 100V
I
D
= 208A
nC
Gate – Source Charge
Gate – Drain Charge
T
d(on)
Tu
r
n
-on Delay Time
T
r
Rise Time
T
d(off)
Tu
r
n
-off Delay Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
ns
I
D
= 208A
R
G
= 2.5
Ω
T
f
Fall Time
116
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A, R
G
= 2.5
Ω
E
on
Tu
r
n
-on Switching Energy
1698
1858
1872
1972
µJ
µJ
E
off
E
on
E
off
Tu
r
n
-off Switching Energy
Tu
r
n
-on Switching Energy
Tu
r
n
-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A, R
G
= 2.5
Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
RRM
I
RM
I
F
Maximum Peak Repetitive Reverse Voltage
200
V
µA
A
T
j
= 25°C
T
j
= 125°C
T
c
= 80°C
500
750
M
a
x
i
m
um Reverse Leakage Current
DC Forward Current
V
R
=200V
180
1.1
1.4
I
F
= 180A
I
F
= 360A
1.15
V
F
Diode Forward Voltage
V
I
F
= 180A
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
0.9
31
60
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 180A
V
R
= 133V
di/dt = 600A/µs
T
j
= 25°C
180
750
Q
rr
nC
T
j
= 125°C
2 – 6
APTM20SKM08TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
0.32
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
S
T
G
T
C
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting
torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
Min Typ Max Unit
50
k
Ω
K
3952
R
25
T: Thermistor temperature
R
T
: Thermistor value at T
R
T
=
1
1
T
2
5
/
8
5
exp
B
−
T
25
SP4 Package outline
(dimensions in mm)
A
L
L D
I
MENSI
O
N
S
MARKED ” * ” ARE T
O
L
E
RENCED AS :
3 – 6
APTM20SKM08TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
.
9
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0
.
0001
0.001
0
.
1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
1400
1200
1000
800
600
400
200
0
600
500
400
300
200
100
0
V
GS
=15V
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
T
J
=25°C
7V
T
J
=
1
25°C
6.5V
T
J
=-55°C
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
V
D
S
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
R
D
S
(
o
n
)
vs Drain Current
1.2
1.1
1
Normalized to
GS
=10V @ 104A
V
200
150
100
50
V
GS
=1
0
V
V
G
S
=20V
0.9
0.8
0
0
50
100 150 200 250 300
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 6
APTM20SKM08TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
V
GS
=
1
0V
I
D
= 104A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1000
100
10
li
m
i
t
e
d by
R
DS on
100µs
1ms
10ms
Single pulse
T
J
=150°C
T
C
=25°C
100ms
1
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
I
D
=208A
T
J
=25°C
V
DS
=
4
0V
V
DS
=100V
12
10
8
Ciss
10000
1000
100
Coss
V
DS
=160V
6
4
Crss
2
0
0
40 80
120 160 200 240 280 320
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APTM20SKM08TG
Delay Times vs Current
Rise and Fall times vs Current
160
120
100
80
60
40
20
0
V
DS
=133V
R
G
=2.5
Ω
T
J
=125°C
L=100µH
140
120
100
80
t
d(o
f
f
)
t
f
V
DS
=133V
R
G
=2.5
Ω
T
J
=
1
25°C
L=100µH
t
r
60
t
d(on)
40
20
0
0
50 100
150 200 250 300 350
0
50 100
150 200 250 300 350
I
D
, Drain Current (A)
I
D
, Drain Current (
A
)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5
4
3
2
1
4
3
2
1
0
V
DS
=133V
I
D
=208A
T
J
=125°C
V
DS
=133V
E
off
R
G
=2.5
Ω
T
J
=125°C
L
=
1
00µH
E
off
L
=
1
00µH
E
on
E
on
E
off
0
50 100
150 200 250 300 350
0
5
10
15
20
25
I
D
, Drain Current (
A
)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
T
J
=150°C
ZVS
T
J
=25°C
V
DS
=133V
ZCS
D=50%
R
G
=2.5
Ω
T
J
=125°C
T
C
=75°C
Hard
switching
0
1
25 50 75
100 125 150 175 200
0.2 0.4 0.6 0.8
1
1
.
2
1
.
4 1.6 1.8
I
D
, Drain Current (A)
V
SD
, Source to Drain Voltage (V)
Microsemi reserves the right to change,
w
i
thout notice, the specifications and information contained herein
Mi
c
rosemi’s products are covered by one or more of U.S patents 4,895,810
5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
and foreign patents.
U.S and Foreign patents pending.
All Rights Reserved.
6 – 6
