Microchip-Tech-APTM50DAM19G
| Part # | Microchip-Tech-APTM50DAM19G |
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APTM50DAM19G
V
DSS
= 500V
R
DSon
= 19m
Ω
typ @ Tj = 25°C
MOSFET Power Module
I
D
= 163A @ Tc = 25°C
Application
V
B
US
CR1
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
OUT
F
e
atures
Q2
•
Power MOS 7
®
MOSFETs
–
–
–
–
–
Low R
DSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Ve
r
y rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Ve
r
y low stray inductance
–
–
Symmetrical design
M5 power connectors
•
High level of integration
VB
U
S
0
/
VBUS
O
U
T
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
500
Unit
V
DSS
Drain – Source Breakdown Voltage
V
T
c
= 25°C
163
I
D
Continuous Drain Current
A
T
c
= 80°C
122
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
652
±30
V
m
Ω
W
22.5
P
D
I
AR
E
AR
E
AS
M
a
x
i
m
um Power Dissipation
T
c
= 25°C
1136
46
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
1 – 6
APTM50DAM19G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
GS
= 0V
,
V
DS
= 500V
T
j
= 25°C
V
GS
= 0V
,
V
DS
= 400V
T
j
= 125°C
V
GS
= 10V, I
D
= 81.5A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
200
1000
22.5
5
±200
I
DSS
Zero Gate Voltage Drain Current
µA
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
G
S S
19
m
Ω
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
i
s
s
C
oss
C
r
s
s
Input Capacitance
22.4
V
GS
= 0V
V
DS
= 25V
f = 1MHz
nF
Output Capacitance
4.8
0.36
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Total gate Charge
492
132
260
18
35
87
V
GS
= 10V
V
Bus
= 250V
I
D
= 163A
nC
Gate – Source Charge
Gate – Drain Charge
T
d(on)
Tu
r
n
-on Delay Time
T
r
Rise Time
T
d(off)
Tu
r
n
-off Delay Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
ns
I
D
= 163A
T
f
Fall Time
R
G
= 1
Ω
77
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 163A, R
G
= 1
Ω
E
on
E
off
E
on
E
off
Tu
r
n
-on Switching Energy
Tu
r
n
-off Switching Energy
Tu
r
n
-on Switching Energy
Tu
r
n
-off Switching Energy
3020
2904
4964
3384
µJ
µJ
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 163A, R
G
= 1
Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max
Unit
V
RRM
I
RM
I
F
Maximum Peak Repetitive Reverse Voltage
M
a
x
i
m
um Reverse Leakage Current
DC Forward Current
600
V
µA
A
T
j
= 25°C
T
j
= 125°C
T
c
= 70°C
350
600
V
R
=600V
120
1.6
1.9
1.4
I
F
= 120A
I
F
= 240A
I
F
= 120A
1.8
V
F
Diode Forward Voltage
V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
130
170
440
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
F
= 120A
V
R
= 400V
di/dt = 400A/µs
Q
rr
nC
1840
2 – 6
APTM50DAM19G
Thermal and package characteristics
Symbol Characteristic
Min Typ
Max Unit
Transistor
Diode
0.11
0.46
R
thJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
V
ISOL
T
J
T
S
T
G
T
C
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting
torque
N.m
g
2
Wt
Package Weight
SP6 Package outline
(dimensions in mm)
3 – 6
APTM50DAM19G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0
.
001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
500
400
300
200
100
0
700
600
500
400
300
200
100
0
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
V
GS
=10&15V
7.5V
7V
6.5V
6V
T
J
=25°C
T
J
=125°C
5.5V
T
J
=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS
, Drain to Source Voltage (V)
V
G
S
, Gate to Source Voltage (V)
R
DS
(on) vs Drain Current
DC Drain Current vs Case Temperature
180
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
G
S
=10V @ 81.5A
V
GS
=
1
0V
160
140
120
100
80
60
40
20
V
V
GS
=20V
0
0
100
200
300
400
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 6
APTM50DAM19G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2
.
5
1.2
1.1
1.0
0.9
0.8
0.7
V
G
S
=10V
I
D
=81.5A
2
.
0
1
.
5
1
.
0
0
.
5
0
.
0
-50 -25
0
25 50 75
100 125 150
–
5
0 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by R
DSon
100µs
100
10
1
1ms
10ms
Single pulse
T
J
=150°C
T
C
=25°C
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
T
C
, Case Temperature (°C)
V
DS
, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
V
D
S
=100V
V
D
S
=250V
I
D
=163A
T
J
=25°C
Ciss
12
10
8
Coss
Crss
V
DS
=
4
00V
6
4
2
10
0
0
10
20
30
40
50
0
80 160
240 320 400 480 560 640
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APTM50DAM19G
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
V
DS
=333V
R
G
=1
Ω
T
J
=125°C
L=100µH
t
f
V
D
S
=333V
R
G
=1
Ω
T
J
=125°C
L=100µH
td(on)
t
r
20
60
100 140 180 220 260
20
60
100 140 180 220 260
I
D
, Drain Current (
A
)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
10
8
V
DS
=333V
I
D
=163A
T
J
=125°C
V
DS
=333V
R
G
=1
Ω
14
12
10
8
E
on
E
off
T
J
=
1
25°C
L=100µH
L=100µH
6
E
off
E
on
4
6
4
E
o
f
f
2
2
0
0
0
2.5
5
7.5
10
12.5
20
60 100
140 180 220 260
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
T
J
=150°C
ZVS
Z
C
S
V
DS
=333V
D=50%
T
J
=25°C
R
G
=1
Ω
T
J
=125°C
T
C
=75°C
Hard
switching
0
1
0
20 40 60 80
100 120 140
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
D
, Drain Current (
A
)
Microsemi reserves the right to change,
w
i
thout notice, the specifications and information contained herein
Mi
c
rosemi’s products are covered by one or more of U.S patents 4,895,810
5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
and foreign patents.
U.S and Foreign patents pending.
All Rights Reserved.
6 – 6
