Microchip-Tech-APTM50H14FT3G
| Part # | Microchip-Tech-APTM50H14FT3G |
Download  | Microchip-Tech-APTM50H14FT3G |
APTM50H14FT3G
V
DSS
= 500V
R
DSon
= 140m
typ @ Tj = 25°C
I
D
= 26A @ Tc = 25°C
Full – Bridge
MOSFET Power Module
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7
®
FREDFETs
–
–
–
–
–
–
Low R
DSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
(Per MOSFET)
Symbol
Parameter
Drain – Source Voltage
Max ratings
Unit
V
V
DSS
500
26
18
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
A
I
DM
V
GS
R
DSon
Pulsed Drain current
Gate – Source Voltage
Drain – Source ON Resistance
105
±30
168
V
m
W
P
D
I
AR
E
AR
E
AS
Power Dissipation
T
c
= 25°C
208
35
30
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 7
APTM50H14FT3G
Electrical Characteristics
(Per MOSFET)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 500V
V
GS
= 10V, I
D
= 13A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= ±30 V, V
DS
= 0V
100
168
5
µA
m
V
R
DS(on)
Drain – Source on Resistance
V
GS(th)
Gate Threshold Voltage
I
GSS
140
3
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
(Per MOSFET)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3259
709
51
V
GS
= 0V
V
DS
= 25V
f = 1MHz
pF
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
72
20
36
10
17
50
41
326
V
GS
= 10V
V
Bus
= 250V
nC
I
D
= 26A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
ns
µJ
T
d(off)
Turn-off Delay Time
I
D
= 26A
R
G
= 5
T
f
E
on
Fall Time
Inductive switching @ 25°C
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Junction to Case Thermal Resistance
V
GS
= 15V, V
Bus
= 333V
E
off
E
on
250
548
288
I
D
= 26A, R
G
= 5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
µJ
E
off
R
thJC
I
D
= 26A, R
G
= 5Ω
0.6 °C/W
Source – Drain diode ratings and characteristics
(Per MOSFET)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
26
18
I
S
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= – 26A
1.3
15
V
V/ns
dv/dt Peak
Diode Recovery
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
250
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
I
S
= – 26A
V
R
= 333V
di
S
/dt = 100A/µs
525
1.6
6
Q
rr
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
– 26A
di/dt
700A/µs
V
R
V
DSS
T
j
150°C
2 – 7
APTM50H14FT3G
Thermal and package characteristics
Symbol Characteristic
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
4000
-40
-40
-40
-40
2
Max
Unit
V
T
J
T
JOP
T
STG
T
C
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
150
T
J
max – 25
125
°C
Operating Case Temperature
125
3
110
Torque Mounting
torque
Wt Package
Weight
To heatsink
M4
N.m
g
Symbol
R
25
∆R
25
/R
25
B
25/85
Characteristic
Resistance @ 25°C
Min Typ Max
Unit
50
5
3952
4
k
%
K
T
25
= 298.15 K
%
∆B/B
T
C
=100°C
R
25
T: Thermistor temperature
R
T
: Thermistor value at T
R
T
1
1
2
5
/
8
5
exp
B
T
25
T
Package outline
(dimensions in mm)
3 – 7
APTM50H14FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
8V
V
DS
> I
D
(on)xR
DS
(on)MAX
V
GS
=10&15V
7.5V
250µs pulse test @ < 0.5 duty cycle
7V
6.5V
T
J
=25°C
6V
5.5V
T
J
=125°C
T
J
=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
R
DS
(on) vs Drain Current
DC Drain Current vs Case Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
30
Normalized to
V
GS
=10V
V
GS
=10V @ 13A
25
20
15
10
5
V
GS
=20V
0
0
10
20
30
40
50
60
25
50
75
100
125
150
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
4 – 7
APTM50H14FT3G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
V
GS
=10V
I
D
=13A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125 150
-50 -25
0
25 50 75
100 125 150
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by R
DSon
Single pulse
T
J
=150°C
T
C
=25°C
1ms
10ms
1
-50 -25
0
25 50 75
100 125 150
1
10
100
1000
T
C
, Case Temperature (°C)
V
DS
, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
V
DS
=100V
I
D
=26A
12
10
8
T
J
=25°C
V
DS
=250V
Ciss
V
DS
=400V
Coss
6
4
Crss
2
10
0
0
10
20
30
40
50
0
20
40
60
80
100
V
DS
, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
APTM50H14FT3G
Delay Times vs Current
Rise and Fall times vs Current
60
50
40
30
20
10
0
80
V
DS
=333V
R
G
=5Ω
60
40
20
0
T
J
=125°C
L=100µH
td(off)
t
f
V
DS
=333V
R
G
=5Ω
T
J
=125°C
L=100µH
td(on)
40
t
r
0
10
20
30
50
60
0
10
20
30
40
50
60
I
D
, Drain Current (A)
I
D
, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
1.5
1
1.2
1
V
DS
=333V
V
DS
=333V
E
off
E
on
R
G
=5Ω
I
D
=26A
T
J
=125°C
L=100µH
T
J
=125°C
L=100µH
0.8
0.6
0.4
0.2
0
E
on
E
off
0.5
0
E
off
0
10
20
30
40
50
0
10
20
30
40
50
60
I
D
, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
600
V
DS
=333V
D=50%
R
G
=5Ω
500
400
300
200
100
0
T
J
=125°C
T
J
=150°C
ZCS
ZVS
T
C
=75°C
Hard
switching
T
J
=25°C
1
5
10
15
20
25
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
D
, Drain Current (A)
6 – 7
APTM50H14FT3G
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at
http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
7 – 7
