Microchip-Tech-ARF1500

D

S

S

S

D

S

ARF1500  

ARF1500  

BeO  

1525-xx  

RF POWER MOSFET  

S

G

S

N-

C

HANNEL ENHANCEMENT MODE  

125V 750W  

40MHz  

S

S

G

The ARF1500 is an RF power transistor designed for very high power scienti

fi

c, commercial, medical and industrial  

RF power generator and ampli

fi

er applications up to 40 MHz.  

•

High Performance Power RF Package.  

•

Very High Breakdown for Improved Ruggedness.  

•

Low Thermal Resistance.  

•

Speci

fi

ed 125 Volt, 27.12 MHz Characteristics:  

•

•

•

Output Power = 750 Watts.  

Gain = 17dB (Class C)  

Ef

fi

ciency > 75%  

•

Nitride Passivated Die for Improved Reliability.  

• RoHS

 

Compliant  

MAXIMUM RATINGS  

Symbol Parameter  

All Ratings:

 

T =

 

25°C unless otherwise speci

fi

ed.  

C

ARF1500  

500  

UNIT  

Volts  

V

DSS  

I

D  

Drain-Source Voltage  

Continuous Drain Current @ T

C

= 25°C  

60  

Amps  

V

GS  

P

D  

Gate-Source Voltage  

±30  

Volts  

T

o

tal Device Dissipation @ T

C

= 25°C  

1500  

-55 to 175  

300  

Watts  

T

J

,T

STG  

T

L  

Operating and Storage Junction

T

e

mperature Range  

Lead

T

e

mperature: 0.063″ from Case for 10 Sec.  

°C  

STATIC ELECTRICAL CHARACTERISTICS  

Symbol Characteristic

 

/ Test Conditions  

MIN  

TYP  

MAX  

UNIT  

Drain-Source Breakdown Voltage

 

(V

GS

= 0V, I

D

= 250

μ

A)  

BV

DSS  

V

DS

(ON)  

500  

Volts  

1

On State Drain Voltage

 

(I

D

(ON)

= 30A, V

GS

= 10V)  

6

7.5  

100  

Zero Gate Voltage Drain Current

 

(V

DS

= 500V, V

GS

= 0V)  

Zero Gate Voltage Drain Current

 

(V

DS

= 400V, V

GS

= 0V, T

C

= 125°C)  

Gate-Source Leakage Current

 

(V

GS

= ±30

V

, V

DS

= 0V)  

Forward Transconductance

 

(V

DS

= 25V, I

D

= 30A)  

I

DSS  

μ

A  

1000  

±400  

nA  

I

GSS  

g

fs  

V

isolation  

V

GS

(TH)  

6

TBD  

3

7.5  

mhos  

Volts  

Volts  

RMS Voltage

(60Hz Sinewave from terminals to mounting surface for 1 minute)  

Gate Threshold Voltage

 

(V

DS

= V

GS

, I

D

= 50mA)  

5

THERMAL CHARACTERISTICS  

Symbol  

R

θ

JC  

MIN  

TYP  

MAX  

UNIT  

Characteristic (per package unless otherwise noted)  

Junction to Case  

0.10  

°C/W  

R

θ

JHS  

0.16  

Junction to Sink

(Use High Ef

fi

ciency Thermal Joint Compound and Planar Heat Sink Surface.)  

CAUTION: These

 

Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.  

DYNAMIC CHARACTERISTICS  

Symbol Characteristic  

ARF1500  

UNIT  

Test Conditions  

MIN  

TYP  

5150  

500  

215  

7.5  

MAX  

6030  

650  

C

iss  

Input Capacitance  

V

GS

= 0V  

C

oss  

pF  

Output Capacitance  

V

f = 1 MHz  

C

rss  

t

d(on)  

t

r  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Rise Time  

225  

V

GS

= 15V  

V

DD

= 250  

6.0  

ns  

I

D

= 60A @ 25°C  

R

G

= 1.6

Ω  

t

d(off)  

t

f  

Turn-off Delay Time  

Fall Time  

20  

10  

FUNCTIONAL CHARACTERISTICS  

Symbol Characteristic  

MIN  

17  

TYP  

19  

MAX  

Test Conditions  

UNIT  

dB  

G

PS  

Common Source Ampli

fi

er Power Gain  

Drain Ef

fi

ciency  

f = 27.12 MHz  

V

GS

= 0V  

V

DD

= 125V  

70  

75  

%

η

P

Ψ

Electrical Ruggedness VSWR 10:1  

No Degradation in Output Power  

1

Pulse

T

e

st: Pulse width < 380

μ

S, Duty Cycle < 2%.  

Microsemi reserves the right to change, without notice, the speci

fi

cations and information contained herein.  

Per transistor section unless otherwise speci

fi

ed.  

20,000  

10,000  

C

iss  

5000  

1000  

500  

C

oss  

C

rss  

100  

.1  

1

10  

100 200  

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

Figure 1, Typical Capacitance vs. Drain-to-Source Voltage  

240  

60  

50  

40  

30  

20  

DATA FOR BOTH SIDES  

V

DS

> I

D

(ON) x  

R

MAX.  

IN PARALLEL  

250

μ

SEC. PULSE TEST  

OPERATION HERE  

@ <0.5 % DUTY CYCLE  

100  

50  

LIMITED BY R  

(ON)  

DS  

100us  

1ms  

T

J

= -55°C  

10  

5

T

J

= +25°C  

T

J

= +125°C  

10ms  

T

C

=+25°C  

T

J

=+200°C  

SINGLE PULSE  

10  

0

100ms  

1

0

2

4

6

8

10  

Figure 2, Typical Transfer Characteristics  

12  

14  

1

5

10  

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

Figure 3, Typical

 

Maximum Safe Operating Area  

50 100  

500  

V

ARF1500  

1.15  

1.10  

1.05  

1.00  

0.95  

0.90  

0.85  

6

5

4

3

2

10.2V  

8.2V  

6.2V  

4.2V  

2.2V  

2V  

1

0

0.80  

0.75  

-50 -25  

0

25 50 75

 

100 125 150  

0

5

10  

15  

T

C

, CASE TEMPERATURE (°C)  

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

Figure 5, Typical Output Characteristics  

Figure 4, Typical Threshold Voltage vs Temperature  

0.12  

0.10  

D = 0.9  

0.08  

0.7  

0.06  

0.5  

Note:  

t

1

0.04  

0.3  

t

2

t

0.02  

0.1  

1

t

Duty Factor D =  

/

2

Peak T

 

= P  

x Z  

+ T  

C

J

DM  

θ

JC  

0.05  

SINGLE PULSE  

10

-3  

0

10

-5  

10

-4  

10

-2  

10

-1  

1.0  

RECTANGULAR PULSE DURATION (SECONDS)  

Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration  

Table 1

 

– Typical

 

Class AB Large Signal Impedance — ARF1500  

F (MHz)  

Z

(

Ω

)  

Z

OL

(

Ω

)  

in  

6.7-j 12  

Z

– Gate shunted with 25

Ω

I

DQ

= 100mA  

in  

2.0  

13.5  

27  

7.5 -j 0.8  

7.1 -j 1.7  

6.1 -j 3.0  

5.0 -j 3.6  

Z

OL

– Conjugate of optimum load for 750 Watts  

0.45 -j 2.5  

0.22 -j 0.67  

0.2 + j .19  

output at V

 

= 125V  

dd  

40  

Clamp  

1.065  

.250  

S

D

S

.500  

Thermal Considerations and Package Mounting:  

Heat Sink  

The rated 1500W power dissipation is only available  

when the package mounting surface is at 25°C and the  

junction temperature is 175°C.

 

The thermal resis-  

tance between junctions and case mounting surface  

is 0.10°C/W. When installed, an additional thermal  

impedance of 0.06°C/W between the package base and  

the mounting surface is smooth and

fl

at. Thermal

 

joint  

compound must be used to reduce the effects of small  

surface irregularities. The heatsink should incorporate a  

copper heat spreader to obtain best results.  

ARF15–  

BeO  

1525-xx  

1.065  

.045  

.005  

S

G

S

.500  

.207  

.375  

.207  

The package is designed to be clamped to a heatsink. A  

clamped joint maintains the required mounting pressure  

while allowing for thermal expansion of both the device  

and the heat sink. A simple clamp, and two 6-32 (M3.5)  

screws can provide the minimum 125 lb. required  

mounting force. T=4-6 in-lb. Please refer to App Note  

1802 “Mounting Instructions for Flangeless Packages.”  

.105 typ.  

HAZARDOUS MATERIAL WARNING  

The ceramic portion of the

 

device between  

leads and mounting surface is beryllium oxide,  

BeO. Beryllium

 

oxide dust is toxic when in-  

haled. Care

 

must be taken during handling  

and mounting to avoid damage to this area .  

These devices must never be thrown away  

with general industrial or domestic waste.  

D

G

S

C1,C11 ARCO

 

465 50-450pF mica trimmer  

C2 1500pF ATC 700B  

C3 2x

 

3300 pF ATC 700B  

C4 8200pF 500V NPO ceramic  

C5 150pF 500V NPO  

+

–

125V  

C8  

C10  

L5  

C7  

C9  

L4  

Output  

RF  

Input  

C7-C8 .1uF 250V ceramic chip  

C9- C10 1000pF Z5U 500V  

L1 120 nH 5t #20 .25″d .3″l  

L3  

L1  

C4  

L2  

TL1  

L2 20

 

nH #20 hairpin loop .3″ x .125″  

L3 175

 

nH – 4t #10

 

.625″ dia .875″ l  

L4 2uH

 

– 22t #24 enam. .312″ dia.  

L5 500nH 2t

 

on 850u .5″ bead  

R1 51

 

Ω

.5W  

C5  

C11  

R1  

C1  

C2  

C3  

ARF1500  

27.12 MHz Test Circuit  

TL1 .25″ x 1.75″ (30

Ω)

Stripline  

27 MHz Test Amp  

ARF1500  

J1  

J2  

RF 3-02  

Parts placement  

27 MHz Test Amp  

ARF1500  

RF 3-02  

1:1 pcb artwork