Microchip-Tech-ARF465BG
| Part # | Microchip-Tech-ARF465BG |
Download  | Microchip-Tech-ARF465BG |
ARF465A(G)
ARF465B(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish
TO-247
Common
Source
RF POWER MOSFETs
N-
C
HANNEL ENHANCEMENT MODE
300V 150W
60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scienti
fi
c, commercial, medical and industrial RF power ampli
fi
er applications up to 60 MHz.
•
Speci
fi
ed 300 Volt, 40.68 MHz Characteristics:
•
Low Cost Common Source RF Package.
•
•
•
Output Power = 150 Watts.
Gain = 13dB (Class C)
Ef
fi
ciency = 75%
•
Low Vth thermal coef
fi
cient.
•
Low Thermal Resistance.
•
Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise speci
fi
ed.
C
ARF465A/B(G)
UNIT
V
DSS
V
DGO
I
D
Drain-Source Voltage
Drain-Gate Voltage
1200
1200
6
Volts
Amps
Volts
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
V
GS
P
D
±30
Watts
°C/W
250
T
o
tal Power Dissipation @ T
C
= 25°C
Junction to Case
R
θ
0.50
JC
T
J
,T
STG
T
L
Operating and Storage Junction
T
e
mperature Range
-55 to 150
300
°C
Lead
T
e
mperature: 0.063″ from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
BV
DSS
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
μ
A)
1200
Volts
1
V
DS
(ON)
On State Drain Voltage
(I
D
(ON) = 3A, V
GS
= 10V)
8
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30
V
, V
DS
= 0V)
Forward Transconductance
(V
DS
= 25V, I
D
= 3A)
25
I
DSS
μ
A
250
±100
I
GSS
g
fs
nA
mhos
Volts
3
3
4
V
GS
(TH)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 50mA)
5
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
ARF465A/B(G)
Test Conditions
GS
= 0V
MIN
TYP
1200
80
30
7
MAX
1500
100
50
UNIT
C
iss
Input Capacitance
V
C
oss
pF
Output Capacitance
V
DS
= 200V
f = 1 MHz
C
rss
t
d(on)
t
r
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
15
V
GS
= 15V
V
DD
= 0.5V
5
10
ns
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6W
t
d(off)
t
f
Turn-off Delay Time
Fall Time
21
12
34
25
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
MIN
13
TYP
15
MAX
Test Conditions
UNIT
dB
G
PS
Common Source Ampli
fi
er Power Gain
Drain Ef
fi
ciency
f = 40.68 MHz
V
GS
= 0V
V
DD
= 300V
70
75
%
η
P
out
= 150W
Ψ
Electrical Ruggedness VSWR 6:1
No Degradation in Output Power
1
Pulse
T
e
st: Pulse width < 380
μ
S, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the speci
fi
cations and information contained herein.
10,000
5000
25
20
15
10
Class C
= 300V
V
P
DD
= 150W
out
C
iss
1000
500
C
oss
100
50
5
0
C
rss
10
0.1
10 20
30 40 50 60 70
80 90 100
FREQUENCY (MHz)
1
10
100 300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Gain vs Frequency
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10
8
24
OPERATION HERE
V
DS
> I
D
(ON) x
R
DS
(ON)MAX.
250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
LIMITED BY R
(ON)
DS
10
5
100uS
1mS
6
1
4
T
J
= -55°C
.5
10mS
DC
T
J
= +25°C
2
T
C
=+25°C
T
J
=+150°C
T
J
= +125°C
SINGLE PULSE
0
0
.1
1
2
3
4
5
6
7
1
10
100
1200
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
Figure 4, Typical Maximum Safe Operating Area
ARF465A/B(G)
1.2
1.1
1
10
8
V
GS
=15V, 10V, 7V
6.5V
6V
6
5.5V
0.9
0.8
4
5V
2
0.7
0.6
4.5V
0
-50 -25
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
25
50
75
100 125
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.60
0.50
0.40
0.30
0.20
0.10
0
0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
1
t
/
2
0.1
Duty Factor D =
Peak T
= P
x Z
+ T
C
0.05
J
DM
θJC
SINGLE PULSE
10
-3
10
-5
10
-4
10
-2
RECTANGULAR PULSE DURATION (SECONDS)
10
-1
1.0
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. ( ”C)
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Case temperature
Figure 9a, TRANSIENT
THERMAL IMPEDANCE MODEL
T
a
ble 1 – Typical Class AB Large Signal input – Output Impedance
Freq. (MHz)
Z
in
(
Ω
)
Z
OL
(
Ω
)
2.0
13.5
27
40
65
21.4 – j 8.7
2.6 – j 7.3
.54 – j 2.9
.22 – j .69
.31 + j 1.65
206 – j 45
68 – j 99
22 – j 64
10.5 – j 44
4.4 – j 27
Z
in
– Gate shunted with 25
Ω
I
DQ
= 100mA
Z
OL
– Conjugate of optimum load for 150 Watts output at V
dd
= 300V
ARF465A/B(G)
+
–
300V
L5
+
–
C7
C8
Bias
0 – 6V
L4
C6
R1
C9
C4
RF
Input
RF
Output
L1
L2
L3
C3
DUT
C1
R2
C2
40.68 MHz Test Circuit
C1 –
1000pF 100V chip ATC 700B
C2-C5 –
Arco 463 Mica trimmer
C6-C8 –
.01
μ
F 500V ceramic chip
C9 – 2200 pF COG 500 V chip
L1 – 4t #20 AWG
.25″ID .3″L ~110 nH
L2 – 2t #20 AWG .25″ID .3″L ~ 25 nH
L3– 4t #16 AWG .4″ ID .5″L ~290 nH
L4 —
25t #24 AWG .35″ID ~2uH
L5– VK200-4B ferrite choke 3uH
R1-R2 — 51 Ohm 0.5W Carbon
DUT = ARF465A/B
TO-247 Package Outline
4.69 .185
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
NOTE:
These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical speci
fi
cations.
The device pin-outs are the mirror image of each other to
allow ease of use as a push-pull pair.
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
Device
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
ARF- A
ARF- B
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate ——- Drain
Source —- Source
Drain ——- Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
HAZARDOUS MATERIAL WARNING:
The ceramic portion of the device between leads and mounting
fl
ange
is beryllium oxide.
Beryllium oxide dust is highly toxic when inhaled.
Care must be taken during handling and mounting to avoid damage
to this area.
These devices must never be thrown away with general
industrial or domestic waste.
ARF465A/B(G)
Disclaimer:
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms
of such Agreement will also apply .
This document and the information contained herein may not be modi
fi
ed, by
any person other than authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by Microsemi in writing signed by an of
fi
cer of Microsemi.
Microsemi reserves the right to change the con
fi
guration, functionality and performance of its products at anytime without any notice.
This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to
fi
tness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance speci
fi
cations believed to be reliable but are not veri
fi
ed and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers
fi
nal application. User or
customer shall not rely on any data and performance speci
fi
cations or parameters provided by Microsemi. It is the customer’s and user’s re-
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
speci
fi
cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro
fi
t. The product is
