Microchip-Tech-ATA5577M2330C-DBB
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Features
•
Contactless Power Supply
•
Contactless Read/Write Data Transmission
•
Radio Frequency f
RF
from 100 kHz to 150 kHz
•
Basic Mode or Extended Mode
•
Compatible with T5557,
A
T
A
5567
•
Replacement for e5551/T5551 in Most Common Operation Modes
•
Configurable for ISO/IEC 11784/785 Compatibility
•
Total 363 Bits EEPROM Memory: 11 Blocks (32 Bits + 1 Lock Bit)
•
High Q-antenna Tolerance Due to Build in Options
•
Adaptable to Different Applications: Access Control, Animal ID and Waste
Management
Read/Write LF
RFID IDIC
100 to 150 kHz
•
On-chip Trimmed Antenna Capacitor
•
Pad Options
–
A
TA5577M1
• 100
µm
×
100 µm for Wire Bonding or Flip Chip
–
A
TA5577M2
ATA5577
• 200
µm
×
400 µm for Direct Coil Bonding
1. Description
Summary
The ATA5577 is a contactless read/write
id
entification
IC
(IDIC
®
) for applications in
the 125-kHz or 134-kHz frequency band. A single coil connected to the chip serves as
the IC’s power supply and bi-directional communication interface. The antenna and
chip together form a transponder or tag.
The on-chip 363-bit EEPROM (11 blocks with 33 bits each) can be read and written
block-wise from a base station (reader).
Data is transmitted from the IDIC (uplink) using load modulation. This is achieved by
damping the RF field with a resistive load between the two terminals Coil 1 and Coil 2.
The IC receives and decodes serial base station commands (downlink), which are
encoded as 100% amplitude modulated (OOK) pulse-interval-encoded bit streams.
A complete datasheet with further technical data is available on request. Please con-
tact your local sales office.
NOTE:
This is a summary document.
The complete document is available.
For more information, please contact
your local Atmel sales office.
4967DS–RFID–10/08
2. Compatibility
The ATA5577 is designed to be compatible with the T5557/ATA5567. The structure of the con-
figuration register is identical. The two modes, Basic mode and Extended mode, are also
available. The ATA5577 is able to replace the e5551/T5551 in most common operation modes.
In all applications, the correct functionality of the replacements must be evaluated and proved.
For further details, refer to Atmel
®
’s web site for product-relevant application notes.
3. System
Block Diagram
Figure 3-1.
RFID System Using ATA5577 Tag
T
r
ansponder
Power
Data
Reader
or
Base station
Memory
1
)
AT
A
5577
1
) Mask option
4.
A
TA5577
– Functional Blocks
Figure 4-1.
Block Diagram
Option register
Modulator
POR
Coil 1
Mode register
Controller
Memory
1
)
(363-bit EEPROM)
Coil 2
Input register
HV generator
T
e
st logic
1
) Mask
option
2
ATA5577
4967DS–RFID–10/08
ATA5577
4.1
Analog Front End (AFE)
The AFE includes all circuits that are directly connected to the coil terminals. It generates the
IC’s power supply and handles the bi-directional data communication with the reader. It consists
of the following blocks:
• Rectifier to generate a DC supply voltage from the AC coil voltage
• Clock extractor
• Switchable load between Coil 1 and Coil 2 for data transmission from the tag to the reader
• Field-gap detector for data transmission from the base station to the tag
• ESD-protection circuitry
4.2
4.3
Data-rate Generator
The data rate is binary programmable to operate at any even-numbered data rate between RF/2
and RF/128 or to any of the fixed Basic mode data rates (RF/8, RF/16, RF/32, RF/40, RF/50,
RF/64, RF/100 and RF/128).
Write Decoder
The write decoder detects the write gaps and verifies the validity of the data stream according to
the Atmel e555x downlink protocol (pulse interval encoding).
4.4
4.5
HV Generator
DC Supply
This on-chip charge pump circuit generates the high voltage required to program the EEPROM.
Power is externally supplied to the IDIC via the two coil connections. The IC rectifies and regu-
lates this RF source and uses it to generate its supply voltage.
4.6
Power-On Reset (POR)
The power-on reset circuit blocks the voltage supply to the IDIC until an acceptable voltage
threshold has been reached.
4.7
4.8
Clock Extraction
The clock extraction circuit uses the external RF signal as its internal clock source.
Controller
The control logic module executes the following functions:
• Load mode register with configuration data from EEPROM block 0 after power-on and during
reading
• Load option register with the settings for the analog front end stored in EEPROM page 1
block 3 after power-on and during reading
• Control all EEPROM memory read/write access and data protection
• Handles the downlink command decoding detecting protocol violations and error conditions
3
4967DS–RFID–10/08
4.9
Mode Register
The mode register maintains a readable shadow copy of the configuration data held in block 0 of
the EEPROM. It is continually refreshed during read mode and (re-)loaded after every POR
event or reset command. On delivery, the mode register is pre-programmed with default values
(see full version of the datasheet).
4.10 Modulator
4.11 Memory
The modulator encodes the serialized EEPROM data for transmission to a tag reader or base
station. Several types of modulation are available including Manchester, bi-phase, FSK, PSK,
and NRZ.
Figure 4-2.
Memory Map
0
L
1
1
L
1……………………………………………………………………………..32
Analog front end option set-up
T
r
aceability data
Block 3
Block 2
Block 1
Block 0
T
r
aceability data
Page 0 configuration data
L
L
L
L
L
L
L
L
User data or password
User data
Block 7
Block 6
Block 5
Block 4
Block 3
Block 2
Block 1
Block 0
User data
User data
User data
User data
User data
Configuration data
32 bits
Not transmitted
The memory is a 363-bit EEPROM, which is arranged in 11 blocks of 33 bits each. Each block
includes a single
Lock
bit, which is responsible for write-protecting the associated block. Pro-
gramming takes place on a block basis, so a complete block (including lock bit) can be
programmed with a single command. The memory is subdivided into two page areas. Page 0
contains 8 blocks and page 1 contains 4 blocks. All 33 bits of a block, including the lock bit, are
programmed simultaneously.
4
ATA5577
4967DS–RFID–10/08
ATA5577
Block 0 of page 0 contains the mode/configuration data, which is not transmitted during regular
read operations. Addressing block 0 will always affect block 0 of page 0 regardless of the page
selector. Block 7 of page 0 may be used as a write-protection password.
Block 3 of page 1 contains the option register, which is not transmitted during regular-read
operation.
Bit 0 of every block is the lock bit for that block. Once locked, the block (including the lock bit
itself) is not re-programmable via the RF field.
Blocks 1 and 2 of page 1 contain traceability data and are transmitted with the modulation
parameters defined in the configuration register after the opcode “11” is issued by the reader.
The traceability data blocks are programmed and locked by Atmel.
5. Absolute
Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliabilit
y
.
Parameters
Symbol
I
coil
Value
Unit
mA
mA
Maximum DC current into Coil1/Coil2
Maximum AC current into Coil1/Coil2, f = 125 kHz
20 (TBD)
20 (TBD)
I
coil p
Power dissipation (die) (free-air condition, time of
application: 1s)
P
tot
100 (TBD)
mW
Electrostatic discharge maximum to
ANSI/ESD-STM5.1-2001 standard (HBM)
V
max
T
amb
T
stg
2000 (TBD)
–40 to +85
–40 to +150
V
Operating ambient temperature range
°C
°C
Storage temperature range (data retention
reduced)
5
4967DS–RFID–10/08
6. Electrical
Characteristics
T
amb
= +25°C; f
coil
= 125 kHz; unless otherwise specified
No.
1
Parameters
Test Conditions
Symbol
Min.
Typ.
125
1.5
Max.
150
Unit
kHz
µA
Type*
RF frequency range
f
RF
100
2.1
T
amb
= 25°C
(1)
TBD
T
Supply current (without
Read – full temperature
current consumed by the
range
2.2
2.3
3.1
3.2
2
TBD
TBD
TBD
µA
µA
V
Q
I
DD
external LC tank circuit)
Programming – full
25
3.6
Q
Q
Q
temperature range
POR threshold (50-mV
hysteresis)
TBD
Coil voltage (AC supply)
Read mode and write
command
(2)
V
coil pp
6
8
V
clamp
V
3.3
4
Program EEPROM
(2)
V
clamp
TBD
TBD
TBD
TBD
V
ms
V
Q
Q
Q
Q
T
Start-up time
V
coil pp
= 6V
t
startup
2.5
11
13
17
5.1
5.2
5.3
V
pp clamp lo
V
pp clamp med
V
pp clamp hi
TBD
TBD
TBD
3-mA current into
Coil1/Coil2
V
Clamp voltage (depends
on settings in option
register)
V
20-mA current into
Coil1/Coil2
5.4
V
pp clamp med
TBD
15
TBD
V
T
6.1
6.2
6.3
V
pp mod lo
V
pp mod med
V
pp mod hi
TBD
TBD
TBD
3
5
7
TBD
TBD
TBD
V
V
V
T
Q
Q
3-mA current into
Coil1/Coil2 and
modulation ON
Modulation parameters
(depends on settings in
option register)
20 mA current into
Coil1/Coil2 and
modulation ON
6.4
V
pp mod med
TBD
7.5
TBD
V
T
6.5
7.1
7.2
7.3
7.4
7.5
7.6
Thermal stability
V
mod lo
/T
amb
V
clkdet lo
V
clkdet med
V
clkdet hi
–1
mV/°C
mV
Q
Q
T
TBD
TBD
TBD
TBD
TBD
TBD
250
550
800
250
550
850
TBD
TBD
TBD
TBD
TBD
TBD
Clock detection level
(depends on settings in
V
coil pp
= 8V
option register)
mV
mV
Q
Q
T
V
gapdet lo
V
gapdet med
V
gapdet hi
mV
Gap detection level
(depends on settings in
V
coil pp
= 8 V
option register)
mV
mV
Q
From last command gap
to re-enter read mode
(64 + 648 internal
clocks)
Erase all/Write all
(3)
8
9
Programming time
Endurance
T
prog
5
5.7
6
ms
T
n
cycle
100000
Cycles
Q
*)
T
y
pe means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes: 1.
I
DD
measurement set-up R = 100k
Ω
; V
CLK
= V
coil
= 3V: EEPROM programmed to 00 … 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
– V
CLK
) / R
2. Current
into Coil1/Coil2 is limited to 10 mA.
3. Since
EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
uncut wafer) deliver
y
.
6
ATA5577
4967DS–RFID–10/08
ATA5577
6. Electrical
Characteristics (Continued)
T
amb
= +25°C; f
coil
= 125 kHz; unless otherwise specified
No.
Parameters
Test Conditions
T
o
p = 55°C
(3)
T
o
p = 150°C
(3)
T
o
p = 250°C
(3)
Symbol
t
retention
t
retention
t
retention
Min.
10
Typ.
Max.
Unit
Type*
10.1
20
50
Y
e
ars
hrs
Q
T
10.2 Data
retention
96
10.3
24
hrs
Q
T
11.1
320
242
TBD
TBD
TBD
330
250
130
75
340
258
11.2
Mask option
V
coil pp
= 1V
11.3 Resonance
capacitor
C
r
TBD
TBD
TBD
pF
11.4
11.5
10
Q
T
Capacitance tolerance
T
amb
12.1
C
r
320
330
340
pF
Micromodule capacitor
parameters
12.2
T
e
mperature coefficient
TBD
TBD
TBD
TBD
TBD
TBD
*)
T
y
pe means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes: 1.
I
DD
measurement set-up R = 100k
Ω
; V
CLK
= V
coil
= 3V: EEPROM programmed to 00 … 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
– V
CLK
) / R
2. Current
into Coil1/Coil2 is limited to 10 mA.
3. Since
EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
uncut wafer) deliver
y
.
7. Revision
History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
4967DS-RFID-10/08
•
Features on page 1 changed
•
Features on page 1 changed
4967CS-RFID-01/08
4967BS-RFID-09/07
•
Section 2 “Compatibility” on page 2 changed
•
Section 4.9 “Mode Register” on page 4 changed
•
Put datasheet in a new template
•
Section 4.2 “Data-rate Generator” on page 3 changed
•
Figure 4-2 “Memory Map” on page 5 changed
•
Section 6 “Electrical Characteristics” numbers 2.1, 2.2 and 2.3 on page 6
changed
7
4967DS–RFID–10/08
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4967DS–RFID–10/08
