Microchip-Tech-ATA8202C-PXQW-1
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ATA8201/ATA8202
UHF ASK/FSK Receiver
DATASHEET
Features
●
Transparent RF receiver ICs for 315MHz (Atmel
®
ATA8201) and 433.92MHz
(Atmel ATA8202) with high receiving sensitivity
●
Fully integrated PLL with low phase noise VCO, PLL, and loop filter
●
High FSK/ASK sensitivity:
●
–105dBm (Atmel ATA8201, FSK, 9.6Kbits/s, Manchester, BER 10
-3
●
–114dBm (Atmel ATA8201, ASK, 2.4Kbits/s, Manchester, BER 10
-3
)
●
–104dBm (Atmel ATA8202, FSK, 9.6Kbits/s, Manchester, BER 10
-3
)
●
–113dBm (Atmel ATA8202, ASK, 2.4Kbits/s, Manchester, BER 10
-3
)
●
Supply current: 6.5mA in Active Mode (3
V
, 25°C, ASK Mode)
●
Data rate: 1Kbit/s to 10Kbits/s Manchester ASK, 1Kbit/s to 20Kbits/s Manchester
FSK with four programmable bit rate ranges
●
Switching between modulation types ASK/FSK and different data rates possible in
≤
1ms typically, without hardware modification on board to allow different
modulation schemes
●
Low standby current: 50µA at 3V, 25°C
●
ASK/FSK receiver uses a low-IF architecture with high selectivity, blocking, and low
intermodulation (typical 3-dB blocking 68.0dBC at ±3MHz/74.0dBC at ±20.0MHz,
system I1dBCP = –31dBm/system IIP3 = –24dBm)
●
T
e
legram pause up to 52ms supported in ASK Mode
●
Wide bandwidth AGC to handle large out-of-band blockers above the system
I1dBCP
●
440-kHz IF frequency with 30-dB image rejection and 420-kHz IF bandwidth to
support PLL transmitters with standard crystals or SAW-based transmitters
●
RSSI (received signal strength indicator) with output signal dynamic range of 65dB
●
Low in-band sensitivity change of typically ±2.0dB within ±160-kHz center
frequency change in the complete temperature and supply voltage range
●
Sophisticated threshold control and quasi-peak detector circuit in the data slicer
●
Fast and stable XTO start-up circuit (> –1.4 k
Ω
worst-case start impedance)
●
Clock generation for microcontroller
●
ESD protection at all pins (±4kV HBM, ±200V MM, ±500V FCDM)
4971G-INDCO-09/14
●
Dual supply voltage range: 2.7V to 3.3V or 4.5V to 5.5V
●
T
e
mperature range: –40°C to +85°C
●
Small 5mm
×
5mm QFN24 package
Applications
●
Industrial/aftermarket keyless entry and tire pressure monitoring systems
●
Alarm, telemetering and energy metering systems
●
Remote control systems for consumer and industrial markets
●
Access control systems
●
Home automation
●
Home entertainment
●
T
o
ys
Benefits
●
Supports header and blanking periods of protocols common in RKE and TPM systems (up to 52ms in ASK Mode)
●
All RF relevant functions are integrated. The single-ended RF input is suited for easy adaptation to
λ
/ 4 or printed-loop
antennas
●
Allows a low-cost application with only 8 passive components
●
Optimal bandwidth maximizes sensitivity while maintaining SAW transmitter compatibility
●
Clock output provides an external microcontroller crystal-precision time reference
●
Well suited for use with Atmel
®
PLL transmitter ATA8401/ATA8402/ATA8403/ATA8404/ATA8405
2
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
1.
General Description
The Atmel
®
ATA8201/ATA8202 is a UHF ASK/FSK transparent receiver IC with low power consumption supplied in a small
QFN24 package (body 5mm
×
5mm, pitch 0.65mm). Atmel ATA8202 is used in the 433MHz to 435MHz band of operation,
and Atmel ATA8201 in 313MHz to 317MHz.
For improved image rejection and selectivity, the IF frequency is fixed to 440kHz. The IF block uses an 8th-order band pass
yielding a receive bandwidth of 420kHz. This enables the use of the receiver in both SAW- and PLL-based transmitter
systems utilizing various types of data-bit encoding such as pulse width modulation, Manchester modulation, variable pulse
modulation, pulse position modulation, and NRZ. Prevailing encryption protocols such as Keeloq
®
are easily supported due
to the receiver’s ability to hold the current data slicer threshold for up to 52ms when incoming RF telegrams contain a
blanking interval. This feature eliminates erroneous noise from appearing on the demodulated data output pin, and simplifies
software decoding algorithms. The decoding of the data stream must be carried out by a connected microcontroller device.
Because of the highly integrated design, the only required RF components are for the purpose of receiver antenna matching.
Atmel ATA8201 and Atmel ATA8202 support Manchester bit rates of 1Kbit/s to 10Kbits/s in ASK and 1Kbit/s to 20Kbits/s in
FSK mode. The four discrete bit rate passbands are selectable and cover 1.0Kbit/s to 2.5Kbits/s, 2.0Kbits/s to 5.0Kbits/s,
4.0Kbits/s to 10.0Kbits/s, and 8.0Kbits/s to 10.0Kbits/s or 20.0Kbits/s (for ASK or FSK, respectively). The receiver contains
an RSSI output to provide an indication of received signal strength and a SENSE input to allow the customer to select a
threshold below which the DATA signal is gated off. ASK/FSK and bit rate ranges are selected by the connected
microcontroller device via pins ASK_NFSK, BR0, and BR1.
Figure 1-1.
System Block Diagram
ATA8201/ATA8202
Digital Control
Logic
Power
Supply
Antenna
RF Receiver
Microcontroller
4 … 8
(LNA, Mixer,
VCO, PLL,
IF Filter,
Microcontroller
Interface
RSSI Amp.,
Demodulator)
XTO
ATA8201/ATA8202 [DATASHEET]
3
4971G–INDCO–09/14
Figure 1-2.
Pinning QFN24
24 23 22 21 20 19
18
TEST2
TEST1
CLK_OUT
1
2
3
4
5
6
TEST3
RSSI
SENSE_CTRL
SENSE
LNA_IN
17
16
15
14
13
CLK_OUT_CTRL1
CLK_OUT_CTRL0
ENABLE
LNA_GND
7
8
9 10
11 12
Table 1-1.
Pin Description
Pin
1
Symbol
Function
TEST2
TEST1
T
e
st pin, during operation at GND
T
e
st pin, during operation at GND
Output to clock a connected microcontroller
Input to control CLK_OUT (MSB)
Input to control CLK_OUT (LSB)
Input to enable the XTO
2
3
CLK_OUT
CLK_OUT_CTRL1
CLK_OUT_CTRL0
ENABLE
XTAL2
4
5
6
7
Reference crystal
8
XTAL1
Reference crystal
9
DVCC
Digital voltage supply blocking
Power supply input for voltage range 4.5V to 5.5V
Power supply input for voltage range 2.7V to 3.3V
Ground
10
11
12
13
14
15
VS5V
VS3V_AVCC
GND
LNA_GND
LNA_IN
RF ground
RF input
SENSE
Sensitivity control resistor
Sensitivity selection
Low: Normal sensitivity, High: Reduced sensitivity
16
SENSE_CTRL
17
18
19
20
21
RSSI
TEST3
RX
Output of the RSSI amplifier
T
e
st pin, during operation at GND
Input to activate the receiver
Bit rate selection, LSB
BR0
BR1
Bit rate selection, MSB
FSK/ASK selection
Low: FSK, High: ASK
22
ASK_NFSK
23
24
CDEM
DATA_OUT
GND
Capacitor to adjust the lower cut-off frequency data filter
Data output
Ground/backplane (exposed die pad)
4
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 1-3.
Block Diagram
ASK
FSK
ASK/FSK
Demo-
dulator
VS3V_AVCC
VS5V
Power
Supply
CDEM
ASK/FSK
Control
ASK_NFSK
IF Amp
SENSE
Data
DATA_OUT
BR0
BR1
Slicer
SENSE_CTRL
IF Filter
LPF
GND
Standby
Logic Control
RX
CLK_OUT_CTRL1
CLK_OUT_CTRL0
CLK_OUT
XTO
DVCC
Div. by 3, 6, 12
IF Amp
LPF
RSSI
PLL
XTO
ENABLE
(/24, /32)
TEST1
TEST2
TEST3
LNA_IN
LNA
VCO
LNA_GND
XTAL2
XTAL1
ATA8201/ATA8202 [DATASHEET]
5
4971G–INDCO–09/14
2.
RF Receiver
As seen in
Figure 1-3 on page 5
, the RF receiver consists of a low-noise amplifier (LNA), a local oscillator, and the signal
processing part with mixer, IF filter, IF amplifier with analog RSSI, FSK/ASK demodulator, data filter, and data slicer.
In receive mode, the LNA pre-amplifies the received signal which is converted down to a 440-kHz intermediate frequency
(IF), then filtered and amplified before it is fed into an FSK/ASK demodulator, data filter, and data slicer. The received signal
strength indicator (RSSI) signal is available at the pin RSSI.
2.1
Low-IF Receiver
The receive path consists of a fully integrated low-IF receiver. It fulfills the sensitivity, blocking, selectivity, supply voltage,
and supply current specification needed to design, e.g., an industrial/ aftermarket integrated receiver for RKE and TPM
systems. A benefit of the integrated receive filter is that no external components needed.
At 315MHz, the Atmel
®
ATA8201 receiver (433.92MHz for the Atmel ATA8202 receiver) has a typical system noise figure of
6.0dB (7.0dB), a system I1dBCP of –31dBm (–30dBm), and a system IIP3 of –24dBm (–23dBm). The signal path is linear for
out-of-band disturbers up to the I1dBCP and hence there is no AGC or switching of the LNA needed, and a better blocking
performance is achieved. This receiver uses an IF (intermediate frequency) of 440kHz, the typical image rejection is 30dB
and the typical 3-dB IF filter bandwidth is 420kHz (f
IF
= 440kHz ± 210kHz, f
lo_IF
= 230kHz and f
hi_IF
= 650kHz). The
demodulator needs a signal-to-noise ratio of 8.5dB for 10Kbits/s Manchester with ±38kHz frequency deviation in FSK mode,
thus, the resulting sensitivity at 315MHz (433.92MHz) is typically –105dBm (–104dBm).
Due to the low phase noise and spurs of the synthesizer together with the 8th-order integrated IF filter, the receiver has a
better selectivity and blocking performance than more complex double superhet receivers, without using external
components and without numerous spurious receiving frequencies.
A low-IF architecture is also less sensitive to second-order intermodulation (IIP2) than direct conversion receivers where
every pulse or amplitude modulated signal (especially the signals from TDMA systems like GSM) demodulates to the
receiving signal band at second-order non-linearities.
2.2
Input Matching at LNA_IN
The measured input impedances as well as the values of a parallel equivalent circuit of these impedances can be seen in
T
a
ble 2-1
. The highest sensitivity is achieved with power matching of these impedances to the source impedance.
Table 2-1.
Measured Input Impedances of the LNA_IN Pin
f
RF
[MHz]
315
Z
In
(RF_IN) [
Ω
]
(72.4 – j298)
(55 – j216)
Ω
R
In_p
//C
In_p
[pF]
1300
Ω
//1.60
900
Ω
//1.60
433.92
The matching of the LNA input to 50
Ω
is done using the circuit shown in
Figure 2-1
and the values of the matching elements
given in
T
a
ble 2-2
. The reflection coefficients were always
≤
–10dB. Note that value changes of C1 and L1 may be
necessary to compensate individual board layout parasitics. The measured typical FSK and ASK Manchester-code
sensitivities with a bit error rate (BER) of 10
–3
are shown in
T
a
ble 2-3
and
T
a
ble 2-4 on page 7
. These measurements were
done with wire-wound inductors having quality factors reported in
T
a
ble 2-2
, resulting in estimated matching losses of 0.8dB
at 315MHz and 433.92MHz. These losses can be estimated when calculating the parallel equivalent resistance of the
inductor with R
loss
= 2
× π ×
f
×
L
×
Q
L
and the matching loss with 10 log(1+R
In_p
/ R
loss
).
Figure 2-1.
Input Matching to 50
Ω
ATA8201/ATA8202
RF
IN
C1
14
LNA_IN
L1
6
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Table 2-2.
Input Matching to 50
Ω
f
RF
[MHz]
315
C
1
[pF]
2.2
L
1
[nH]
68
Q
L1
20
433.92
2.2
36
15
Table 2-3.
Measured Typical Sensitivity FSK,
±
38 kHz, Manchester, BER = 10
–3
BR_Range_0
1.0Kbit/s
BR_Range_0
2.5Kbits/s
BR_Range_1
5Kbits/s
BR_Range_2
10Kbits/s
BR_Range_3
10Kbits/s
BR_Range_3
RF Frequency
315MHz
20Kbits/s
–104dBm
–103dBm
–108dBm
–107dBm
–108dBm
–107dBm
–107dBm
–106dBm
–105dBm
–104dBm
–104dBm
–103dBm
433.92MHz
Table 2-4.
Measured Typical Sensitivity 100% ASK, Manchester, BER = 10
–3
BR_Range_0
1.0Kbit/s
BR_Range_0
2.5Kbits/s
BR_Range_1
5Kbits/s
BR_Range_2
10Kbits/s
BR_Range_3
10Kbits/s
RF Frequency
315MHz
–114dBm
–113dBm
–114dBm
–113dBm
–113dBm
–112dBm
–111dBm
–110dBm
–109dBm
–108dBm
433.92MHz
Conditions for the sensitivity measurement:
The given sensitivity values are valid for Manchester-modulated signals. For the sensitivity measurement the distance from
edge to edge must be evaluated. As can be seen in
Figure 6-1 on page 21
, in a Manchester-modulated data stream, the time
segments T
EE
and 2
×
T
EE
occur.
To reach the specified sensitivity for the evaluation of T
EE
and 2
×
T
EE
in the data stream, the following limits should be used
(T
EE
min, T
EE
max, 2
×
T
EE
min, 2
×
T
EE
max).
Table 2-5.
Limits for Sensitivity Measurements
Bit Rate
1.0Kbit/s
2.4Kbits/s
5.0Kbits/s
9.6Kbits/s
T
EE
Min
260µs
110µs
55µs
T
EE
Typ
500µs
208µs
100µs
52µs
T
EE
Max
790µs
310µs
155µs
78µs
2
×
T
EE
Min
800µs
2
×
T
EE
Typ
1000µs
416µs
2
×
T
EE
Max
1340µs
525µs
320µs
160µs
200µs
260µs
27µs
81µs
104µs
131µs
ATA8201/ATA8202 [DATASHEET]
7
4971G–INDCO–09/14
2.3
Sensitivity Versus Supply Voltage, Temperature and Frequency Offset
To calculate the behavior of a transmission system, it is important to know the reduction of the sensitivity due to several
influences. The most important are frequency offset due to crystal oscillator (XTO) and crystal frequency (XTAL) errors,
temperature and supply voltage dependency of the noise figure, and IF-filter bandwidth of the receiver.
Figure 2-2
and
Figure 2-3 on page 8
show the typical sensitivity at 315MHz, ASK, 2.4Kbits/s and 9.6Kbits/s, Manchester,
Figure 2-4
and
Figure 2-5 on page 9
show a typical sensitivity at 315MHz, FSK, 2.4Kbits/s and 9.6Kbits/s, ±38kHz, Manchester versus the
frequency offset between transmitter and receiver at T
amb
= +25°C and supply voltage VS = VS3V_AVCC = VS5V = 3.0V.
Figure 2-2.
Measured Sensitivity (315MHz, ASK, 2.4Kbits/s, Manchester) Versus Frequency Offset
Input Sensitivity (dBm) at BER < 1e-3, ATA8201, ASK, 2.4Kbits/s (Manchester),
BR = 0
-118
-117
-116
3.0V/25°C
-115
-114
-113
-112
-111
-110
-109
-108
-107
-106
-105
-104
-103
-300
-200
-100
0
100
200
300
delta RF (kHz) at 315MHz
Figure 2-3.
Measured Sensitivity (315MHz, ASK, 9.6Kbits/s, Manchester) Versus Frequency Offset
Input Sensitivity (dBm) at BER < 1e-3, ATA8201, ASK, 9.6Kbits/s (Manchester),
BR = 2
-115
-114
-113
-112
3.0V/25°C
-111
-110
-109
-108
-107
-106
-105
-104
-103
-102
-101
-100
-300
-200
-100
0
100
200
300
delta RF (kHz) at 315MHz
8
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 2-4.
Measured Sensitivity (315MHz, FSK, 2.4Kbits/s, ±38kHz, Manchester) Versus Frequency Offset
Input Sensitivity (dBm) at BER < 1e-3, ATA8201, FSK, 2.4Kbits/s (Manchester),
BR = 0
-112
-111
-110
3.0V/25°C
-109
-108
-107
-106
-105
-104
-103
-102
-101
-100
-99
-98
-300
-200
-100
0
100
200
300
delta RF (kHz) at 315MHz
Figure 2-5.
Measured Sensitivity (315MHz, FSK, 9.6Kbits/s, ±38kHz, Manchester) Versus Frequency Offset
Input Sensitivity (dBm) at BER < 1e-3, ATA8201, FSK, 9.64Kbits/s (Manchester),
BR = 2
-110
-109
-108
-107
-106
3.0V/25°C
-105
-104
-103
-102
-101
-100
-99
-98
-97
-96
-95
-300
-200
-100
0
100
200
300
delta RF (kHz) at 315MHz
As can be seen in
Figure 2-5 on page 9
, the supply voltage has almost no influence. The temperature has an influence of
about ±1.0dB, and a frequency offset of ±160kHz also influences by about ±1dB. All these influences, combined with the
sensitivity of a typical IC (–105dB), are then within a range of –103.0dBm and –107.0dBm over temperature, supply voltage,
and frequency offset. The integrated IF filter has an additional production tolerance of ±10kHz, hence, a frequency offset
between the receiver and the transmitter of ±160kHz can be accepted for XTAL and XTO tolerances.
Note:
For the demodulator used in the Atmel
®
ATA8201/ATA8202, the tolerable frequency offset does not change
with the data frequency. Hence, the value of ±160kHz is valid for 1Kbit/s to 10Kbits/s.
This small sensitivity change over supply voltage, frequency offset, and temperature is very unusual in such a receiver. It is
achieved by an internal, very fast, and automatic frequency correction in the FSK demodulator after the IF filter, which leads
to a higher system margin. This frequency correction tracks the input frequency very quickly. If, however, the input frequency
makes a larger step (for example, if the system changes between different communication partners), the receiver has to be
restarted. This can be done by switching back to Standby mode and then again to Active mode (pin RX 1
→
0
→
1) or by
generating a positive pulse on pin ASK_NFSK (0
→
1
→
0).
ATA8201/ATA8202 [DATASHEET]
9
4971G–INDCO–09/14
2.4
RX Supply Current Versus Temperature and Supply Voltage
T
a
ble 2-7
shows the typical supply current of the receiver in Active mode versus supply voltage and temperature with
VS = VS3V_AVCC = VS5V.
Table 2-6.
Measured Current in Active Mode ASK
VS = VS3V_AVCC = VS5V
3.0V
T
amb
=
25°C
6.5mA
Table 2-7.
Measured Current in Active Mode FSK
VS = VS3V_AVCC = VS5V
3.0V
T
amb
=
25°C
6.7mA
2.5
Blocking, Selectivity
As can be seen in
Figure 2-6 on page 10
, and
Figure 2-7
and
Figure 2-8 on page 11
, the receiver can receive signals 3dB
higher than the sensitivity level in the presence of large blockers of –34.5dBm or –28dBm with small frequency offsets of
±3MHz or ±20MHz.
Figure 2-6
, and
Figure 2-7 on page 11
show the narrow-band blocking, and
Figure 2-8 on page 11
shows the wide-band
blocking characteristic. The measurements were done with a useful signal of 315MHz, FSK, 10Kbits/s, ±38kHz, Manchester,
BR_Range2 with a level of –105dBm + 3dB = –102dBm, which is 3dB above the sensitivity level. The figures show how
much larger than –102dBm a continuous wave signal can be, until the BER is higher than 10
–3
. The measurements were
done at the 50
Ω
input shown in
Figure 2-1 on page 6
. At 3 MHz, for example, the blocker can be 67.5dBC higher than –
102dBm, or
–102dBm + 67.5dBC = –34.5dBm.
Figure 2-6.
Close-in 3-dB Blocking Characteristic and Image Response at 315MHz
70
60
50
40
30
20
10
0
-10
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
Distance from Interfering to Receiving Signal (MHz)
10
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 2-7.
Narrow-band 3-dB Blocking Characteristic at 315MHz
80
70
60
50
40
30
20
10
0
-10
-5
-4
-3
-2
-1
0
1
2
3
4
5
Distance from Interfering to Receiving Signal (MHz)
Figure 2-8.
Wide-band 3-dB Blocking Characteristic at 315MHz
80
70
60
50
40
30
20
10
0
-10
-50
-40
-30
-20
-10
0
10
20
30
40
50
Distance from Interfering to Receiving Signal (MHz)
T
a
ble 2-8
shows the blocking performance measured relative to –102dBm for some frequencies. Note that sometimes the
blocking is measured relative to the sensitivity level 104dBm (denoted dBS), instead of the carrier –102dBm (denoted dBC).
Table 2-8.
Blocking 3dB Above Sensitivity Level With BER < 10
–3
Frequency Offset
+1.5MHz
–1.5MHz
+2MHz
Blocking Level
–44.5dBm
–44.5dBm
–39.0dBm
–36.0dBm
–34.5dBm
–34.5dBm
–28.0dBm
–28.0dBm
Blocking
57.5dBC, 60.5dBS
57.5dBC, 60.5dBS
63dBC, 66dBS
–2MHz
66dBC, 69dBS
+3MHz
67.5dBC, 70.5dBS
67.5dBC, 70.5dBS
74dBC, 77dBS
–3MHz
+20MHz
–20MHz
74dBC, 77dBS
The Atmel
®
ATA8201/ATA8202 can also receive FSK and ASK modulated signals if they are much higher than the I1dBCP.
It can typically receive useful signals at –10dBm. This is often referred to as the nonlinear dynamic range (that is, the
maximum to minimum receiving signal), and is 95dB for 10Kbits/s Manchester (FSK). This value is useful if the transmitter
and receiver are very close to each other.
ATA8201/ATA8202 [DATASHEET]
11
4971G–INDCO–09/14
2.6
In-band Disturbers, Data Filter, Quasi-peak Detector, Data Slicer
If a disturbing signal falls into the received band, or if a blocker is not a continuous wave, the performance of a receiver
strongly depends on the circuits after the IF filter. Hence, the demodulator, data filter, and data slicer are important.
The data filter of the Atmel
®
ATA8201/ATA8202 functions also as a quasi-peak detector. This results in a good suppression
of above mentioned disturbers and exhibits a good carrier-to-noise performance. The required useful-signal-to-disturbing-
signal ratio, at a BER of 10
–3,
is less than 14dB in ASK mode and less than 3dB (BR_Range_0 to BR_Range_2) and 6dB
(BR_Range_3) in FSK mode. Due to the many different possible waveforms, these numbers are measured for the signal, as
well as for disturbers, with peak amplitude values. Note that these values are worst-case values and are valid for any type of
modulation and modulating frequency of the disturbing signal, as well as for the receiving signal. For many combinations,
lower carrier-to-disturbing-signal ratios are needed.
2.7
RSSI Output
The output voltage of the pin RSSI is an analog voltage, proportional to the input power level. Using the RSSI output signal,
the signal strength of different transmitters can be distinguished. The usable dynamic range of the RSSI amplifier is 65dB,
the input power range P(RF
IN
) is
–110dBm to –45dBm, and the gain is 15mV/dB.
Figure 2-9
shows the RSSI characteristic of a typical device at 315MHz with
VS3V_AVCC = VS5V = 3V and T
amb
= 25°C with a matched input as shown in
T
a
ble 2-2
and
Figure 2-1 on page 6
. At
433.92MHz, 1 dB more signal level is needed for the same RSSI results.
Figure 2-9.
Typical RSSI Characteristic at 315MHz Versus Temperature and Supply Voltage
1.7
1.6
3V, 25°C
1.5
1.4
1.3
1.2
max: +9dBm
1.1
1.0
0.9
0.8
0.7
0.6
min: -9dBm
0.5
0.4
-130 -120 -110 -100
-90 -80 -70 -60 -50 -40 -30 -20 -10
Pin (dBm)
As can be seen in
Figure 2-9 on page 12
, for single devices there is a variance over temperature and supply voltage range
of ±3dB. The total variance over production, temperature, and supply voltage range is ±9dB.
2.8
Frequency Synthesizer
The LO generates the carrier frequency for the mixer via a PLL synthesizer. The XTO (crystal oscillator) generates the
reference frequency f
XTO
. The VCO (voltage-controlled oscillator) generates the drive voltage frequency f
LO
for the mixer. f
LO
is divided by the factor 24 (Atmel ATA8201) or 32 (Atmel ATA8202). The divided frequency is compared to f
XTO
by the phase
frequency detector. The current output of the phase frequency detector is connected to the fully integrated loop filter, and
thereby generates the control voltage for the VCO. By means of that configuration, the VCO is controlled in a way, such that
f
LO
/ 24 (f
LO
/ 32) is equal to f
XTO
. If f
LO
is determined, f
XTO
can be calculated using the following formula: f
XTO
= f
LO
/ 24
(f
XTO
= f
LO
/ 32). The synthesizer has a phase noise of –130dBC/Hz at 3MHz and spurs of –75dBC.
Care must be taken with the harmonics of the CLK output signal, as well as with the harmonics produced by a
microprocessor clocked using the signal, as these harmonics can disturb the reception of signals.
12
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
3.
XTO
The XTO is an amplitude-regulated Pierce oscillator type with external load capacitances (2
×
16pF). Due to additional
internal and board parasitics (C
P
) of approximately 2pF on each side, the load capacitance amounts to 2
×
18pF (9pF total).
The XTO oscillation frequency f
XTO
is the reference frequency for the integer-N synthesizer. When designing the system in
terms of receiving and transmitting frequency offset, the accuracy of the crystal and XTO have to be considered.
The XTO’s additional pulling (including the R
M
tolerance) is only ±5ppm. The XTAL versus temperature, aging, and
tolerances is then the main source of frequency error in the local oscillator.
The XTO frequency depends on XTAL properties and the load capacitances C
L1,2
at pin XTAL1 and XTAL2. The pulling (p)
of f
XTO
from the nominal f
XTAL
is calculated using the following formula:
C
m
——- ————————————————————
×
10 ppm
C
LN
– C
L
-6
p =
×
2
(
C
O
+ C
LN
) × (
C
O
+ C
L
)
C
m
, the crystal’s motional capacitance; C
0
, the shunt capacitance; and C
LN
, the nominal load capacitance of the XTAL, are
found in the datasheet. C
L
is the total actual load capacitance of the crystal in the circuit, and consists of C
L1
and C
L2
connected in series.
Figure 3-1.
Crystal Equivalent Circuit
Crystal Equivalent Circuit
C
0
XTAL
L
m
R
m
C
m
C
L1
C
L2
C
L
= C
L1
x C
L2
/ (C
L1
+ C
L2
)
With C
m
≤
10fF, C
0
≥
1.0pF, C
LN
= 9pF and C
L1,2
= 16pF ±1%, the pulling amounts to P
≤
±1ppm.
The C
0
of the XTAL has to be lower than C
Lmin
/ 2 = 7.9pF for a Pierce oscillator type in order to not enter the steep region of
pulling versus load capacitance where there is risk of an unstable oscillation.
To ensure proper start-up behavior, the small signal gain and the negative resistance provided by this XTO at start is very
large. For example, oscillation starts up even in the worst case with a crystal series resistance of 1.5k
Ω
at C
0
≤
2.2pF with
this XTO. The negative resistance is approximately given by
Z
×
Z +
Z
×
Z +
Z
×
Z
×
gm
⎧
⎨
⎩
⎫
⎬
⎭
1
3
2
3
1
3
———————————————————————————-
Re
{
Zxtocore
}
= Re
Z
1
+ Z
2
+ Z
3
+ Z
1
×
Z
2
×
gm
with Z
1
and Z
2
as complex impedances at pins XTAL1 and XTAL2, hence
Z
1
= –j / (2
×
p
×
f
XTO
×
C
L1
) + 5
Ω
and Z
2
= –j / (2
×
p
×
f
XTO
×
C
L2
) + 5
Ω
.
Z
3
consists of crystal C
0
in parallel with an internal 110-k
Ω
resistor, hence
Z
3
= –j / (2
×
p
×
f
XTO
×
C
0
) / 110 k
Ω
, gm is the internal transconductance between XTAL1 and XTAL2, with typically 20mS at
25°C.
With f
XTO
= 13.5MHz, gm = 20mS, C
L
= 9pF, and C
0
= 2.2pF, this results in a negative resistance of about 2k
Ω
. The worst
case for technology, supply voltage, and temperature variations is then always higher than 1.4k
Ω
for C
0
≤
2.2pF.
Due to the large gain at start, the XTO is able to meet a very low start-up time. The oscillation start-up time can be estimated
with the time constant
τ
.
2
———————————————————————————————————–
τ
=
4
× π
2
×
f
XTAL
2
×
C
m
× (
Re
(
Z
xtocor
e
)
+ R
m
)
ATA8201/ATA8202 [DATASHEET]
13
4971G–INDCO–09/14
After 10
τ
to 20
τ,
an amplitude detector detects the oscillation amplitude and sets XTO_OK to High if the amplitude is large
enough; this activates the CLK_OUT output if it is enabled via the pins CLK_OUT_CTRL0 and CLK_OUT_CTRL1. Note that
the necessary conditions of the DVCC voltage also have to be fulfilled.
It is recommended to use a crystal with C
m
= 3.0fF to 10fF, C
LN
= 9pF, R
m
< 120
Ω
and C
0
= 1.0pF to 2.2pF.
Lower values of C
m
can be used, slightly increasing the start-up time. Lower values of C
0
or higher values of C
m
(up to 15fF)
can also be used, with only little influence on pulling.
Figure 3-2.
XTO Block Diagram
C
L1
C
L2
XTAL1
XTAL2
CLK_OUT_CTRL0 CLK_OUT_CTRL1
CLK_OUT
&
f
FXTO
Divider
/3, /6, /12
XTO_OK
Amplitude
Detector
Divider
/16
f
DCLK
The relationship between f
XTO
and the f
RF
is shown in
T
a
ble 3-1
.
Table 3-1.
Calculation of f
RF
Frequency [MHz]
433.92 (Atmel ATA8202)
315.0 (Atmel ATA8201)
f
XTO
[MHz]
f
RF
13.57375
13.1433
f
XTO
×
32 – 440kHz
XTO
×
24 – 440kHz
f
Attention must be paid to the harmonics of the CLK_OUT output signal f
CLK_OUT
as well as to the harmonics produced by an
microprocessor clocked with it, since these harmonics can disturb the reception of signals if they get to the RF input. If the
CLK_OUT signal is used, it must be carefully laid out on the application PCB. The supply voltage of the microcontroller must
also be carefully blocked.
14
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
3.1
Pin CLK_OUT
Pin CLK_OUT is an output to clock a connected microcontroller. The clock is available in Standby and Active modes. The
frequency f
CLK_OUT
can be adjusted via the pins CLK_OUT_CTRL0 and CLK_OUT_CTRL1, and is calculated as follows:
Table 3-2.
Setting of f
CLK_OUT
CLK_OUT_CTRL1
CLK_OUT_CTRL0
Function
Clock on pin CLK_OUT is switched off
(Low level on pin CLK_OUT)
0
0
0
1
1
1
0
1
f
CLK_OUT
= f
XTO
/ 3
f
CLK_OUT
= f
XTO
/ 6
f
CLK_OUT
= f
XTO
/ 12
The signal at CLK_OUT output has a nominal 50% duty cycle. To save current, it is recommended that CLK_OUT be
switched off during Standby mode.
3.2
Basic Clock Cycle of the Digital Circuitry
The complete timing of the digital circuitry is derived from one clock. As seen in
Figure 3-2 on page 14
, this clock cycle,
T
DCLK
, is derived from the crystal oscillator (XTO) in combination with a divider.
f
XTO
———–
=
f
DCLK
16
T
DCLK
controls the following application relevant parameters:
– Debouncing of the data signal stream
– Start-up time of the RX signal path
The start-up time and the debounce characteristic depend on the selected bit rate range (BR_Range) which is defined by
pins BR0 and BR1. The clock cycle T
XDCLK
is defined by the following formulas for further reference:
BR_Range
⇒
BR_Range 0: T
XDCLK
= 8
×
T
DCLK
BR_Range 1: T
XDCLK
= 4
×
T
DCLK
BR_Range 2: T
XDCLK
= 2
×
T
DCLK
BR_Range 3: T
XDCLK
= 1
×
T
DCLK
ATA8201/ATA8202 [DATASHEET]
15
4971G–INDCO–09/14
4.
Sensitivity Reduction
The output voltage of the RSSI amplifier is internally compared to a threshold voltage V
Th_red
. V
Th_red
is determined by the
value of the external resistor R
Sense
. R
Sense
is connected between the pins SENSE and VS3V_AVCC (see
Figure 10-1 on
page 25
). The output of the comparator is fed into the digital control logic. By this means, it is possible to operate the receiver
at a lower sensitivity.
If the level on input pin SENSE_CTRL is low, the receiver operates at full sensitivity.
If the level on input pin SENSE_CTRL is high, the receiver operates at a lower sensitivity. The reduced sensitivity is defined
by the value of R
Sense
, the maximum sensitivity by the signal-to-noise ratio of the LNA input. The reduced sensitivity depends
on the signal strength at the output of the RSSI amplifier.
Since different RF input networks may exhibit slightly different values for the LNA gain, the sensitivity values given in the
electrical characteristics refer to a specific input matching. This matching is illustrated in
Figure 2-1 on page 6
and exhibits
the best possible sensitivity.
If the sensitivity reduction feature is not used, pin SENSE can be left open, pin SENSE_CTRL must be set to GND.
To operate with reduced sensitivity, pin SENSE_CTRL must be set to high before the RX signal path will be enabled by
setting pin RX to high (see
Figure 4-1 on page 16
). As long as the RSSI level is lower than V
Th_red
(defined by the external
resistor R
Sense
) no data stream is available on pin DATA_OUT (low level on pin DATA_OUT). An internal RS flip-flop will be
set to high the first time the RSSI voltage crosses V
Th_red
, and from then on the data stream will be available on pin
DATA_OUT. From then on the receiver also works with full sensitivity. This makes sure that a telegram will not be interrupted
if the RSSI level varies during the transmission. The RS flip-flop can be set back, and thus the receiver switched back to
reduced sensitivity, by generating a positive pulse on pin ASK_NFSK (see
Figure 4-2 on page 17
). In FSK mode, operating
with reduced sensitivity follows the same way.
Figure 4-1.
Reduced Sensitivity Active
ENABLE
ASK_NFSK
SENSE_CTRL
RX
V
Th_red
RSSI
t
t
Startup_PLL Startup_Sig_Proc
DATA_OUT
16
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 4-2.
Restart Reduced Sensitivity
ENABLE
ASK_NFSK
SENSE_CTRL
RX
V
Th_red
RSSI
t
Startup_Sig_Proc
DATA_OUT
5.
Power Supply
Figure 5-1.
Power Supply
VS3V_AVCC
SW_DVCC
IN
OUT
V_REG
3.0V typ.
VS5V
DVCC
EN
RX
The supply voltage range of the Atmel
®
ATA8201/ATA8202 is 2.7V to 3.3V or 4.5V to 5.5V.
Pin VS3V_AVCC is the supply voltage input for the range 2.7V to 3.3V, and is used in battery applications using a single
lithium 3V cell. Pin VS5V is the voltage input for the range 4.5V to 5.5V (car applications) in this case the voltage regulator
V_REG regulates VS3V_AVCC to typically 3.0V. If the voltage regulator is active, a blocking capacitor of 2.2µF has to be
connected to VS3V_AVCC (see
Figure 10-1 on page 25
).
DVCC is the internal operating voltage of the digital control logic and is fed via the switch SW_DVCC by VS3V_AVCC.
DVCC must be blocked on pin DVCC with 68nF (see
Figure 9-1 on page 24
and
Figure 10-1 on page 25
).
Pin RX is the input to activate the RX signal processing and set the receiver to Active mode.
ATA8201/ATA8202 [DATASHEET]
17
4971G–INDCO–09/14
5.1
OFF Mode
A low level on pin RX and ENABLE will set the receiver to OFF mode (low power mode). In this mode, the crystal oscillator is
shut down and no clock is available on pin CLK_OUT. The receiver is not sensitive to a transmitter signal in this mode.
Table 5-1.
Standby Mode
RX
ENABLE
Function
0
0
OFF mode
5.2
Standby Mode
The receiver activates the Standby mode if pin ENABLE is set to “1”.
In Standby mode, the XTO is running and the clock on pin CLK_OUT is available after the start-up time of the XTO has
elapsed (dependent on pin CLK_OUT_CTRL0 and CLK_OUT_CTRL1). During Standby mode, the receiver is not sensitive
to a transmitter signal.
In Standby mode, the RX signal path is disabled and the power consumption I
Standby
is typically 50 µA (CLK_OUT output off,
VS3V_AVCC = VS5V = 3V). The exact value of this current is strongly dependent on the application and the exact operation
mode, therefore check the section
“Electrical Characteristics: General” on page 26
for the appropriate application case.
Table 5-2.
Standby Mode
RX
ENABLE
Function
0
1
Standby mode
Figure 5-2.
Standby Mode (CLK_OUT_CTRL0 or CLK_OUT_CTRL1 = 1)
CLK_OUT
t
XTO_Startup
ENABLE
Standby Mode
5.3
Active Mode
The Active mode is enabled by setting the level on pin RX to high. In Active mode, the RX signal path is enabled and if a
valid signal is present it will be transferred to the connected microcontroller.
Table 5-3.
Active Mode
RX
ENABLE
Function
1
1
Active mode
During T
Startup_PLL
the PLL is enabled and starts up. If the PLL is locked, the signal processing circuit starts up
(T
Startup_Sig_Proc
). After the start-up time, all circuits are in stable condition and ready to receive. The duration of the start-up
sequence depends on the selected bit rate range.
18
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 5-3.
Active Mode
CLK_OUT
ENABLE
RX
DATA_OUT
DATA_OUT valid
t
I
t
Startup_Sig_Proc
Startup_PLL
Startup_PLL
I
I
I
Active
Standby
Active
Standby Mode
Startup
Active Mode
Table 5-4.
Start-up Time
Atmel ATA8202 (433.92MHz)
T
Startup_PLL
T
Startup_Sig_Proc
Atmel ATA8201 (315MHz)
BR1
BR0
T
Startup_PLL
T
Startup_Sig_Proc
0
0
1
1
0
1
0
1
1096µs
644µs
417µs
304µs
1132µs
665µs
431µs
324µs
261µs
269µs
Table 5-5.
Modulation Scheme
ASK_NFSK
RF
IN
at Pin LNA_IN
f
FSK_H
f
FSK_L
Level at Pin DATA_OUT
1
0
1
0
0
1
f
ASK
on
f
ASK
off
ATA8201/ATA8202 [DATASHEET]
19
4971G–INDCO–09/14
6.
Bit Rate Ranges
Configuration of the bit rate ranges is carried out via the two pins BR0 and BR1. The microcontroller uses these two interface
lines to set the corner frequencies of the band-pass data filter. Switching the bit rate ranges while the RF front end is in
Active mode can be done on the fly and will not take longer than 100 µs if done while remaining in either ASK or FSK mode.
If the modulation scheme is changed at the same time, the switching time is (T
Startup_Sig_Proc
, see
Figure 7-1 on page 22
).
Each BR_Range is defined by a minimum edge-to-edge time. To maintain full sensitivity of the receiver, edge-to-edge
transition times of incoming data should not be less than the minimum for the selected BR_Range.
Table 6-1.
BR Ranges ASK
Minimum Edge-to-edge
Edge-to-edge Time Period T
EE
Recommended Bit Rate
(Manchester)
(1)
Time Period T
EE
of the
of the Data Signal During the
BR1 BR0
BR_Range
BR_Range0
BR_Range1
BR_Range2
BR_Range3
Data Signal
(2)
Start-up Period
(3)
0
0
1
1
0
1
0
1
1.0Kbit/s to 2.5Kbits/s
2.0Kbits/s to 5.0Kbits/s
4.0Kbits/s to 10.0Kbits/s
8.0Kbits/s to 10.0Kbits/s
200µs
100µs
50µs
200µs to 500µs
100µs to 250µs
50µs to 125µs
50µs to 62.5µs
50µs
Table 6-2.
BR Ranges FSK
Minimum Edge-to-edge
Edge-to-edge Time Period T
EE
Recommended Bit Rate
(Manchester)
(1)
Time Period T
EE
of the
of the Data Signal During the
BR1 BR0
BR_Range
BR_Range0
BR_Range1
BR_Range2
BR_Range3
Data Signal
(2)
Start-up Period
(3)
0
0
1
0
1
0
1
1.0Kbit/s to 2.5Kbits/s
2.0Kbits/s to 5.0Kbits/s
4.0Kbits/s to 10.0Kbits/s
8.0Kbits/s to 20.0Kbits/s
200µs
100µs
50µs
200µs to 500µs
100µs to 250µs
50µs to 125µs
25µs to 62.5µs
1
25µs
Note:
If during the start-up period (T
Startup_PLL
+ T
Startup_Sig_Proc
) there is no RF signal, the data filter settles to the
noise floor, leading to noise on pin DATA_OU
T
.
Notes: 1.
As can be seen, a bit stream of, for example, 2.5Kbits/s can be received in BR_Range0 and BR_Range1
(overlapping BR_Ranges).
T
o
g
et the full sensitivity, always use the lowest possible BR_Range (here,
BR_Range0). The advantage in the next higher BR_Range (BR_Range1) is the shorter start-up period, mean-
ing lower current consumption during Polling mode. Thus, it is a decision between sensitivity and current
consumption.
2. The
receiver is also capable of receiving non-Manchester-modulated signals, such as PWM, PPM, VPWM,
NRZ. In ASK mode, the header and blanking periods occurring in Keeloq-like protocols (up to 52ms) are
supported.
3.
T
o
e
nsure an accurate settling of the data filter during the start-up period (
T
Startup_PLL
+
T
Startup_Sig_Proc
), the
edge-to-edge time T
EE
of the data signal (preamble) must be inside the given limits during this period.
20
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
Figure 6-1.
Examples of Supported Modulation Formats
T
T
T
T
T
T
EE
EE
EE
EE
EE
EE
MAN:
PWM:
Logic 0
Logic 0
Logic 1
Logic 1
T
T
T
T
EE
EE
EE
EE
Logic 0
Logic 1
T
T
T
EE
EE
EE
VPWM:
On Transition Low to High
On Transition High to Low
Logic 0
Logic 1
T
T
T
EE
EE
EE
T
T
T
T
T
T
T
EE
EE
EE
EE
EE
EE
EE
PPM:
NRZ:
Logic 0
Logic 0
Logic 1
Logic 1
T
EE
Figure 6-2.
Supported Header and Blanking Periods
Preamble
Header
Data Burst
Guard Time
Data Burst
ATA8201/ATA8202 [DATASHEET]
21
4971G–INDCO–09/14
7.
ASK_NFSK
The ASK_NFSK pin allows the microcontroller to rapidly switch the RF front end between demodulation modes. A logic 1 on
this pin selects ASK mode, and a logic 0 FSK mode. The time to change modes (T
Startup_Sig_Proc
) depends on the bit rate
range being selected (not current bit rate range) and is given in
T
a
ble 5-4 on page 19
. This response time is specified for
applications that require an ASK preamble followed by FSK data (for typical TPM applications). During T
Startup_Sig_Proc
, the
level on pin DATA_OUT is low.
Figure 7-1.
ASK Preamble 2.4Kbits/s followed by FSK Data 9.6Kbits/s
ENABLE
RX
BR1
BR0
ASK_NFSK
DATA_OUT
Data valid BR0
Data valid BR3
T
Startup_Sig_Proc
22
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
8.
Polling Current Calculation
Figure 8-1.
Polling Cycle
ENABLE
RX
I
I
Active
Active
I
I
I
Standby
Supply
Standby
T
T
T
(= 1 / Signal_Bitrate (average)
Bitcheck
(Startup Signal Processing)
Startup_Sig_Proc
(Startup RF-PLL)
Startup_PLL
In an industrial or aftermarket RKE and TPM system, the average chip current in Polling mode, I
Polling
, is an important
parameter. The polling period must be controlled by the connected microcontroller via the pins ENABLE and RX. The polling
current can be calculated as follows:
I
Polling
= (T
Startup_PLL
/ T
Polling_Period
)
×
I
Startup_PLL
+ (T
Startup_Sig_Proc
/ T
Polling_Period
)
×
I
Active
+
(T
Bitcheck
/ T
Polling_Period
)
×
I
Active
+ (T
Polling_Period
– T
Startup_PLL
– T
Startup_Sig_Proc
– T
Bitcheck
) / T
Polling_Period
×
I
Standby
T
Startup_PLL
T
Startup_Sig_Proc
:
depends on 315MHz/433.92MHz application.
depends on 315MHz/433.92MHz application and the selected bit
rate range.
:
T
Bitcheck
T
Polling_Period
I
Startup_PLL
I
Active
:
depends on the signal bit rate (1 / Signal_Bit_Rate).
depends on the transmitter telegram (preburst).
depends on 3V or 5V application and the setting of pin CLK_OUT.
depends on 3V or 5V application, ASK or FSK mode and the setting of
pin CLK_OUT.
:
:
:
I
Standby
:
depends on 3V or 5V application and the setting of pin CLK_OUT.
Example:-
315-MHz application (ATA8201), bit rate: 9.6Kbits/s, T
Polling_Period
= 8ms
–> T
Startup_PLL
–> T
Startup_Sig_Proc
–> T
Bitcheck
=
=
=
269µs
324µs (Bit Rate Range 3)
104µs
3V application; ASK mode, CLK_OUT disabled
–> I
Startup_PLL
–> I
Active
–> I
Standby
=
=
=
4.5mA
6.5mA
0.05mA
–> I
Polling
= 0.545mA
ATA8201/ATA8202 [DATASHEET]
23
4971G–INDCO–09/14
9.
3V Application
Figure 9-1.
3V Application
15nF
output
output
output
output
input
TEST2
TEST3
RSSI
TEST1
ATA8201/
ATA8202
CLK_OUT
CLK_OUT_CTRL1
SENSE_CTRL
SENSE
RF
2.2pF
IN
CLK_OUT_CTRL0
ENABLE
LNA_IN
68nH/36nH
LNA_GND
output
315MHz/433.92MHz
VSS VCC
68nF
18pF
18pF
68nF
V
CC
= 2.7V to 3.3V
Note:
Paddle (backplane) must be connected to GND
24
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
10. 5V
Application
Figure 10-1. 5V Application with Reduced/Full Sensitivity
15nF
output
output
output
output
output
input
TEST2
TEST3
RSSI
TEST1
ATA8201/
ATA8202
CLK_OUT
CLK_OUT_CTRL1
SENSE_CTRL
SENSE
R
Sense
2.2pF
CLK_OUT_CTRL0
ENABLE
LNA_IN
RF
IN
LNA_GND
output
VSS VCC
68nH/36nH
315MHz/433.92MHz
68nF
18pF
18pF
2.2µF
68nF
V
CC
= 4.5V to 5.5V
Note:
Paddle (backplane) must be connected to GND
ATA8201/ATA8202 [DATASHEET]
25
4971G–INDCO–09/14
11. Absolute
Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
T
j
Min.
Max.
+150
+125
+85
Unit
°C
°C
°C
V
Junction temperature
Storage temperature
Ambient temperature
Supply voltage VS5V
T
stg
–55
–40
T
amb
V
S
+6
ESD (Human Body Model ESD S 5.1)
every pin
HBM
MM
–4
+4
kV
V
ESD (Machine Model JEDEC A115A)
every pin
–200
–500
+200
ESD (Field Induced Charge Device Model ESD
STM 5.3.1-1999) every pin
FCDM
P
in_max
+500
0
V
Maximum input level, input matched to 50
Ω
dBm
12. Thermal
Resistance
Parameters
Symbol
Value
Unit
K/W
Junction ambient
R
thJA
35
13. Electrical
Characteristics: General
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
1
1.1
2
OFF Mode
V
VS3V_AVCC
= V
VS5V
≤
3V
V
VS5V
= 5V
CLK_OUT disabled
10, 11
10
4
4
µA
µA
A
A
Supply current in OFF
mode
I
SOFF
Standby Mode
XTO running
V
VS3V_AVCC
= V
VS5V
≤
3V
CLK_OUT disabled
10,11
10,11
I
Standby
50
50
100
100
µA
µA
ms
A
A
A
Supply current
Standby mode
2.1
XTO running
V
VS5V
= 5V
CLK_OUT disabled
I
Standby
XTO startup
XTAL: C
m
= 5f
F
,
C
0
= 1.8p
F
,
R
m
= 15
Ω
2.2 System
start-up time
T
XTO_Startup
0.3
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
26
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
From Standby mode to
Active mode
BR_Range_3
Atmel ATA5745
Atmel ATA5746
T
Startup_PLL
T
Startup_Sig_Pro
+
Active mode start-up
time
2.3
A
565
593
µs
µs
c
3
Active Mode
Atmel ATA8201
Atmel ATA8202
14
14
f
RF
f
RF
313
433
317
435
MHz
MHz
A
A
RF operating frequency
range
3.1
V
VS3V_AVCC
= V
VS5V
= 3V
ASK mode
CLK_OUT disabled
SENSE_CTRL = 0
10,11
10,11
10
I
Active
I
Active
I
Active
I
Active
6.5
6.7
6.7
6.9
mA
mA
mA
mA
A
A
A
A
V
VS3V_AVCC
= V
VS5V
= 3V
FSK mode
CLK_OUT disabled
SENSE_CTRL = 0
Supply current Active
mode
3.2
V
VS5V
= 5V
ASK mode
CLK_OUT disabled
SENSE_CTRL = 0
V
VS5V
= 5V
FSK mode
CLK_OUT disabled
SENSE_CTRL = 0
10
V
VS3V_AVCC
= V
VS5V
= 3V
T
Polling_Period
= 8ms
BR_Range_3, ASK
mode, CLK_OUT
disabled
Supply current Polling
mode
3.3
10,11
I
Polling
545
µA
C
Data rate = 9.6Kbits/s
FSK deviation
f
DEV
= ±38kHz
BER = 10
–
3
T
amb
= 25°C
Bit rate 9.6Kbits/s BR2
Bit rate 2.4Kbits/s BR0
(14)
(14)
P
REF_FSK
P
REF_FSK
–103
–106
–105
–108
–106.5 dBm
–109.5 dBm
B
B
Input sensitivity FSK
3.4
f
RF
= 315MHz
FSK deviation ±18kHz to
±50kHz
Bit rate 9.6Kbits/s BR2
Bit rate 2.4Kbits/s BR0
(14)
(14)
P
REF_FSK
P
REF_FSK
–101
–104
dBm
dBm
B
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
ATA8201/ATA8202 [DATASHEET]
27
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
ASK 100% level of
carrier, BER = 10
–
T
amb
= 25°C
3
Input sensitivity ASK
f
RF
= 315MHz
3.5
3.6
Bit rate 9.6Kbits/s BR2
Bit rate 2.4Kbits/s BR0
(14)
(14)
P
REF_ASK
P
REF_ASK
–109
–112
–111
–114
–112.5 dBm
–115.5 dBm
B
B
Sensitivity change at
f
RF
= 433.92MHz
compared to
f
RF
= 315MHz to
f
RF
= 433.92MHz
P = P
REF_ASK
+
Δ
P
REF1
P = P
REF_FSK
+
Δ
P
REF1
(14)
Δ
P
REF1
+1
dB
B
f
RF
= 315MHz
FSK f
DEV
= ±38kHz
Δ
f
OFFSET
≤
±160kHz
Sensitivity change
versus temperature,
supply voltage and
frequency offset
ASK 100%
Δ
f
OFFSET
≤
±160kHz
P = P
REF_ASK
+
Δ
P
REF1
Δ
P
REF2
3.7
(14)
Δ
P
REF2
+4.5
–1.5
B
+
P = P
REF_FSK
+
Δ
P
REF1
Δ
P
REF2
+
R
Sense
connected from
pin SENSE to
pin VS3V_AVCC
dBm
(peak
level)
P
Ref_Red
R
Sense
= 62k
Ω
f
in
= 433.92MHz
–76
–88
–76
–88
dBm
dBm
dBm
dBm
C
C
C
C
Reduced sensitivity
R
Sense
= 82k
Ω
f
in
= 433.92MHz
3.8
R
Sense
= 62k
Ω
f
in
= 315MHz
R
Sense
= 82k
Ω
f
in
= 315MHz
Reduced sensitivity
variation over full
operating range
R
Sense
= 62k
Ω
R
Sense
= 82k
Ω
P
Red
= P
Ref_Red
+ P
Δ
Red
Δ
P
Red
–10
+10
dB
Maximum frequency
difference of f
RF
between
receiver and transmitter
in FSK mode (f
RF
is the
center frequency of the
FSK signal with
Maximum frequency
offset in FSK mode
3.9
(14)
Δ
f
OFFSET
–160
+160
kHz
B
f
BIT
= 10Kbits/s
f
DEV
= ±38kHz
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
28
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
With up to 2dB
loss of sensitivity.
Note that the tolerable
frequency offset is 12kHz
lower for f
DEV
= ±50kHz
than for f
DEV
= ±38kHz,
hence,
Supported FSK
3.10
(14)
f
DEV
±18
±38
±50
kHz
B
frequency deviation
Δ
f
OFFSET
≤
±148kHz
f
RF
= 315MHz
(14)
(14)
NF
NF
f
IF
6.0
7.0
9
dB
dB
B
B
A
A
3.11 System
noise figure
f
RF
= 433.92MHz
f
RF
= 433.92MHz
f
RF
= 315MHz
10
440
440
kHz
kHz
3.12 Intermediate
frequency
f
IF
3dB bandwidth
This value is for
information only!
Note that for crystal and
system frequency offset
calculations,
Δ
f
OFFSET
must be used.
3.13 System
bandwidth
(14)
(14)
SBW
IIP3
435
kHz
A
Δ
f
meas1
= 1.8MHz
Δ
f
meas2
= 3.6MHz
f
RF
= 315MHz
System out-band
3.14 3rd-order
input intercept
point
–24
dBm
C
f
RF
= 433.92MHz
(14)
(14)
IIP3
–23
–31
dBm
dBm
C
C
Δ
f
meas1
= 1MHz
f
RF
= 315MHz
I1dBCP
–36
–35
System outband input 1-
3.15
dB compression point
f
RF
= 433.92MHz
f
RF
= 315MHz
(14)
14
I1dBCP
Z
in_LNA
Z
in_LNA
P
IN_max
P
IN_max
–30
(72.4 – j298)
(55 – j216)
+5
dBm
Ω
C
C
C
C
C
C
C
3.16 LNA
input impedance
f
RF
= 433.92MHz
14
Ω
–
3
BER < 10
, ASK: 100%
FSK: f
DEV
= ±38kHz
f < 1GHz
(14)
(14)
(14)
(14)
–10
–10
–57
–47
dBm
dBm
dBm
dBm
Maximum peak RF input
3.17
level, ASK and FSK
+5
f >1GHz
f
LO
= 315.44MHz
2
×
f
LO
4
×
f
LO
–90
–94
–68
(14)
(14)
dBm
dBm
C
C
3.18 LO
spurs at LNA_IN
f
LO
= 434.36MHz
2
×
f
LO
4
×
f
LO
–92
–88
–58
With the complete image
band
f
RF
= 315MHz
A
A
3.19 Image
rejection
(14)
(14)
24
24
30
30
dB
dB
f
RF
= 433.92MHz
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
ATA8201/ATA8202 [DATASHEET]
29
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
Peak level of useful
signal to peak level of
interferer for BER < 10
–
with any modulation
scheme of interferer
3
Useful signal to interferer
ratio
3.20
FSK BR_Ranges 0, 1, 2
FSK BR_Range_3
(14)
(14)
SNR
FSK0-2
SNR
FSK3
SNR
ASK
D
RSSI
2
4
3
6
dB
dB
dB
dB
B
B
B
A
ASK (P
RF
< P
RFIN_High
Dynamic range
)
(14)
10
65
14
(14),17
Lower level of range
f
RF
= 315MHz
f
RF
= 433.92MHz
(14),17
(14),17
P
RFIN_Low
–110
dBm
dBm
A
A
3.21 RSSI
output
Upper level of range
f
RF
= 315MHz
f
RF
= 433.92MHz
P
RFIN_High
–45
15
Gain
(14),17
(14),17
mV/dB
mV
A
A
Output voltage range
V
RSSI
R
RSSI
350
8
1675
12.5
Output resistance
RSSI pin
3.22
17
10
k
Ω
C
–
3
Sensitivity (BER = 10
)
is reduced by 3dB if a
continuous wave blocking
signal at ±
Δ
f is
Δ
P
Block
higher than the useful
signal level
(Bit rate = 10Kbits/s,
FSK, f
DEV
± 38kHz,
Manchester code,
BR_Range2)
f
RF
= 315MHz
Δ
f ±1.5MHz
Δ
f ±2MHz
Δ
f ±3MHz
Δ
f ±10MHz
Δ
f ±20MHz
3.23 Blocking
57.5
63.0
67.5
72.0
74.0
(14)
Δ
P
Block
dBC
C
f
RF
= 433.92MHz
Δ
f ±1.5MHz
Δ
f ±2MHz
Δ
f ±3MHz
Δ
f ±10MHz
Δ
f ±20MHz
56.5
62.0
66.5
71.0
73.0
(14)
23
Δ
P
Block
dBC
nF
C
D
Capacitor connected to
pin 23 (CDEM)
3.24 CDEM
–5%
15
+5%
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
30
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
4
XTO
At startup; after startup
the amplitude is regulated
to V
PPXTAL
Transconductance XTO
at start
4.1
7,8
g
m, XTO
20
mS
B
C
0
≤
2.2pF
C
m
< 14fF
R
m
≤
120
Ω
4.2 XTO
start-up time
7,8
7,8
T
XTO_Startup
C
0max
300
µs
pF
A
D
4.3 Maximum
C
0
of XTAL
Pulling of LO frequency
3.8
+5
1.0pF
≤
C
0
≤
2.2pF
C
m
= 4.0fF to 7.0fF
f
LO
due to XTO, C
L1
and
C
L2
versus temperature
4.4
3
Δ
f
XTO
–5
ppm
C
R
m
≤
120
Ω
and supply changes
C
m
= 5f
F
,
C
0
= 1.8pF
m
=
15
Ω
R
Amplitude XTAL after
startup
V(XTAL1, XTAL2)
peak-to-peak value
4.5
7,8
7,8
V
PPXTAL
V
PPXTAL
700
350
mVpp
mVpp
C
C
V(XTAL1)
peak-to-peak value
C
0
≤
2.2p
F
,
s
mall signal
start impedance, this
value is important for
crystal oscillator startup
Maximum series
4.6 resistance
R
m
of XTAL at
startup
7,8
Z
XTAL12_START
–1400
–2000
Ω
B
Maximum series
4.7 resistance
R
m
of XTAL
after startup
C
0
≤
2.2pF
C
m
< 14fF
7,8
7,8
R
m_max
15
120
Ω
B
D
Nominal XTAL load
4.8
f
RF
= 433.92MHz
f
RF
= 315MHz
13.57375
13.1433
f
XTAL
MHz
resonant frequency
CLK_OUT_CRTL1 = 0
CLK_OUT_CTRL0 = 0
–> CLK_OUT disabled
f
CLK
disabled (low level on pin
CLK_OUT)
CLK_OUT_CRTL1 = 0
CLK_OUT_CTRL0 = 1
–> division ratio = 3
f
XTO
———–
3
f
CLK
f
CLK
f
CLK
=
=
=
External CLK_OUT
frequency
4.9
3
f
CLK_OUT
MHz
A
CLK_OUT_CRTL1 = 1
CLK_OUT_CTRL0 = 0
–> division ratio = 6
f
XTO
———–
6
CLK_OUT_CRTL1 = 1
CLK_OUT_CTRL0 = 1
–> division ratio = 12
f
XTO
———–
12
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
ATA8201/ATA8202 [DATASHEET]
31
4971G–INDCO–09/14
13. Electrical
Characteristics: General (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 315MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
(1)
Symbol
Min.
Typ.
Max.
Unit Type*
f
RF
= 433.92MHz
CLK_OUT division ratio
= 3
= 6
= 12
4.52458
2.26229
1.13114
3
f
CLK_OUT
MHz
D
CLK_OUT has nominal
50% duty cycle
f
RF
= 315MHz
CLK_OUT division ratio
= 3
= 6
4.3811
2.190
3
f
CLK_OUT
MHz
mV
D
C
= 12
1.0952
CLK_OUT has nominal
50% duty cycle
V
DC
(XTAL1, XTAL2)
4.10 DC
voltage after startup
XTO running (Standby
mode, Active mode)
7,8
V
DCXTO
–250
–45
5
Synthesizer
At ±f
CLK_OUT
,
CLK_OUT enabled
(division ratio = 3)
f
RF
= 315MHz
SP
RX
SP
RX
–75
–75
–70
–70
dBC
dBC
C
A
5.1 Spurs
in Active mode
f
RF
= 433.92MHz
at ±f
XTO
f
RF
= 315MHz
f
RF
= 433.92MHz
Phase noise at 3 MHz
Active mode
f
RF
= 315MHz
f
RF
= 433.92MHz
5.2
L
RX3M
–130
–135
–127 dBC/Hz
–132 dBC/Hz
A
B
Phase noise at 20 MHz
Active mode
5.3
Noise floor
L
RX20M
6
Microcontroller Interface
f
CLK_OUT
< 4.5MHz
C
L
= 10pF
C
L
= Load capacitance on
pin CLK_OUT
2.7V
≤
V
VS5V
≤
3.3V or
4.5V
≤
V
VS5V
≤
5.5V
20% to 80% V
VS5V
t
rise
t
fall
20
20
30
30
ns
ns
CLK_OUT output rise
and fall time
6.1
3
3
C
C
Internal equivalent
capacitance
Used for current
calculation
6.2
C
CLK_OUT
8
pF
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Pin
numbers in parenthesis were measured with RF_IN matched to 50
Ω
according to
Figure 2-1 on page 6
with compo-
nent values as in
T
a
ble 2-2 on page 7
(RF
IN
).
32
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
14. Electrical
Characteristic: 3V Application
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3V and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
7
3V Application
Supply current in OFF
V
VS3V_AVCC
= V
VS5V
≤
3V
7.1
10, 11
I
SOFF
2
µA
A
mode
CLK_OUT disabled
V
VS3V_AVCC
= V
VS5V
≤
3V
external load C on pin
CLK_OUT = 12pF
CLK enabled
420
290
220
C
C
C
Current in Standby
(division ratio 3)
7.2
10, 11
I
Standby
µA
mode (XTO is running)
CLK enabled
(division ratio 6)
CLK enabled
(division ratio 12)
CLK disabled
50
A
C
Current during
T
Startup_PLL
V
VS3V_AVCC
= V
VS5V
≤
3V
CLK disabled
7.3
7.4
10, 11
10, 11
I
Startup_PLL
4.5
mA
mA
V
VS3V_AVCC
= V
VS5V
≤
3V
CLK disabled
SENSE_CTRL = 0
Current in Active mode
ASK
I
Active
6.5
6.7
A
A
V
VS3V_AVCC
= V
VS5V
≤
3V
CLK disabled
Current in Active mode
FSK
7.5
10, 11
I
Active
mA
SENSE_CTRL = 0
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA8201/ATA8202 [DATASHEET]
33
4971G–INDCO–09/14
15. Electrical
Characteristics: 5V Application
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3V and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
8
5V Application
Supply current in OFF
V
VS5V
= 5V
8.1
10
I
SOFF
2
µA
A
mode
CLK_OUT disabled
V
VS5V
≤
5V
external load C on pin
CLK_OUT = 12pF
CLK enabled
700
490
370
C
C
C
Current in Standby
(division ratio 3)
8.2
10
I
Standby
µA
mode (XTO is running)
CLK enabled
(division ratio 6)
CLK enabled
(division ratio 12)
CLK disabled
50
A
C
Current during
T
Startup_PLL
V
VS5V
= 5V
CLK disabled
8.3
8.4
10
10
I
Startup_PLL
4.7
mA
mA
V
VS5V
= 5V
CLK disabled
SENSE_CTRL = 0
Current in Active mode
ASK
I
Active
6.7
6.9
A
A
V
VS5V
= 5V
CLK disabled
SENSE_CTRL = 0
Current in Active mode
FSK
8.5
10
I
Active
mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
34
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
16. Digital
Timing Characteristics
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
9
Basic Clock Cycle of the Digital Circuitry
Basic clock cycle
9.1
T
DCLK
16 / f
XTO
16 / f
XTO
µs
A
BR_Range_0
8
8
BR_Range_1
Extended basic clock
BR_Range_2
4
2
1
4
2
1
9.2
10
T
XDCLK
µs
µs
A
cycle
BR_Range_3
×
T
DCLK
×
T
DCLK
Active Mode
15 µs +
208
×
T
DCLK
10.1 Startup
PLL
T
Startup_PLL
A
A
BR_Range_0
BR_Range_1
BR_Range_2
BR_Range_3
929.5
545.5
T
Startup_Sig_Proc
353.5
257.5
929.5
545.5
353.5
257.5
×
T
DCLK
Startup signal
10.2
processing
×
T
DCLK
ASK
BR_Range =
BR_Range0
BR_Range1
BR_Range2
BR_Range3
FSK
1.0
2.0
4.0
2.5
5.0
10.0
10.0
8.0
10.3 Bit
rate range
BR_Range
Kbits/s
A
BR_Range =
BR_Range0
BR_Range1
BR_Range2
BR_Range3
1.0
2.0
4.0
8.0
2.5
5.0
10.0
20.0
BR_Range_0
BR_Range_1
BR_Range_2
BR_Range_3
Minimum time period
10.4 between
edges at pin
DATA_OUT
10
×
T
DATA_OUT_min
T
XDCLK
24
µs
µs
A
B
Edge-to-edge time
period of the data
BR_Range_0
BR_Range_1
signal for full sensitivity
BR_Range_2
200
500
250
125
62.5
100
50
10.5
T
DATA_OUT
in Active mode
BR_Range_3
25
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA8201/ATA8202 [DATASHEET]
35
4971G–INDCO–09/14
17. Digital
Port Characteristics
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
11
Digital Ports
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
0.2
×
V
S
ENABLE input
– Low level input
voltage
6
V
Il
V
A
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
11.1
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– High level input
voltage
6
V
Ih
0.8
×
V
S
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
A
A
A
V
S
= V
VS5V
= 4.5V to
5.5V
V
S
= V
VS3V_AVCC
=
0.2
×
V
S
V
VS5V
= 2.7V to 3.3V
RX input
– Low level input voltage
19
19
20
20
21
21
22
22
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
11.2
11.3
11.4
11.5
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– High level input
voltage
V
Ih
0.8
×
V
S
0.8
×
V
S
0.8
×
V
S
0.8
×
V
S
V
S
= V
VS5V
=
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
0.2
×
V
S
BR0 input
– Low level input
voltage
V
VS5V
= 2.7V to 3.3V
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– High level input
voltage
V
Ih
V
S
= V
VS5V
=
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
BR1 input
– Low level input
voltage
V
VS5V
= 2.7V to 3.3V
0.2
×
V
S
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– High level input
voltage
V
Ih
V
S
= V
VS5V
=
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
ASK_NFSK input
– Low level input
voltage
V
VS5V
= 2.7V to 3.3V
0.2
×
V
S
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
V
S
= V
VS5V
4.5V to 5.5V
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
– High level input
voltage
V
Ih
=
36
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
17. Digital
Port Characteristics (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
0.2
×
V
S
SENSE_CTRL input
– Low level input
voltage
16
V
Il
V
A
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
11.6
11.7
11.8
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
– High level input
voltage
16
5
V
Ih
0.8
×
V
S
V
V
V
V
V
A
A
A
A
A
V
S
= V
VS5V
=
4.5V to 5.5V
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
CLK_OUT_CTRL0
input
– Low level input
voltage
0.2
×
V
S
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
– High level input
voltage
5
V
Ih
0.8
×
V
S
V
S
= V
VS5V
=
4.5V to 5.5V
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
CLK_OUT_CTRL1
input
– Low level input
voltage
0.2
×
V
S
4
V
Il
V
S
= V
VS5V
=
0.12
×
V
S
4.5V to 5.5V
V
S
= V
VS3V_AVCC
V
VS5V
= 2.7V to 3.3V
=
– High level input
voltage
4
V
Ih
0.8
×
V
S
V
S
= V
VS5V
=
4.5V to 5.5V
TEST1 input must
always be connected
directly to GND
11.9 TEST1
input
11.10 TEST2
output
11.11 TEST3
input
2
1
0
0
0
0
0
0
V
V
V
D
D
D
TEST2 output must
always be connected
directly to GND
TEST3 input must
always be connected
directly to GND
18
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA8201/ATA8202 [DATASHEET]
37
4971G–INDCO–09/14
17. Digital
Port Characteristics (Continued)
All parameters refer to GND and are valid for T
amb
= 25°C, V
VS3V_AVCC
= V
VS5V
= 3
V
, and V
VS5V
= 5V. Typical values are given at
f
RF
= 433.92MHz unless otherwise specified. Details about current consumption, timing, and digital pin properties can be found in the
specific sections of the “Electrical Characteristics”
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
DATA_OUT output
– Saturation voltage low
V
S
= V
VS5V
=
24
V
ol
0.15
0.4
V
B
4.5V to 5.5V
I
DATA_OUT
= 250µA
11.12
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– Saturation voltage
high
V
VS
–
0.15
V
S
= V
VS5V
=
24
V
oh
V
VS
– 0.4
V
V
V
B
B
B
4.5V to 5.5V
I
DATA_OUT
= –250µA
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
CLK_OUT output
– Saturation voltage low
V
S
= V
VS5V
=
3
V
ol
0.15
0.4
4.5V to 5.5V
I
DATA_OUT
= 100µA
11.13
V
S
= V
VS3V_AVCC
=
V
VS5V
= 2.7V to 3.3V
– Saturation voltage
high
V
VS
–
0.15
V
S
= V
VS5V
=
3
V
oh
V
VS
– 0.4
4.5V to 5.5V
I
DATA_OUT
= –100µA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
38
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
18. Ordering
Information
Extended Type Number
ATA8202C-PXQW-1
ATA8201C-PXQW-1
Package
QFN24
QFN24
MOQ
Remarks
6000pcs
6000pcs
5mm
×
5mm, Pb-free, 433.92MHz
5mm
×
5mm, Pb-free, 315MHz
19. Package
Information
Top View
D
24
1
6
PIN 1 ID
technical drawings
according to DIN
specifications
Dimensions in mm
Side View
Bottom View
D2
7
12
13
18
6
1
COMMON DIMENSIONS
(Unit of Measure = mm)
Symbol MIN
NOM
0.85
0.035
0.21
5
MAX NOTE
A
A1
A3
D
0.8
0.9
0.05
0.26
5.1
24
19
Z
0.0
0.16
4.9
e
D2
E
3.5
3.6
3.7
4.9
5
5.1
Z 10:1
E2
L
3.5
3.6
3.7
0.35
0.2
0.4
0.45
0.3
b
e
0.25
0.65
b
10/18/13
TITLE
DRAWING NO.
RE
V
.
GPC
Package Drawing Contact:
Package: VQFN_5x5_24L
Exposed pad 3.6×3.6
6.543-5132.02-4
1
ATA8201/ATA8202 [DATASHEET]
39
4971G–INDCO–09/14
20. Revision
History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
•
Section 18 “Ordering Information” on page 39 updated
•
Section 19 “Package Information” on page 39 updated
•
Put datasheet in the latest template
4971G-INDCO-09/14
4971F-INDCO-07/14
4971E-INDCO-12/12
•
Section 18 “Ordering Information” on page 39 changed
•
Section 13 “Electrical Characteristics: General” on pages 26 to 32 changed
•
Section 14 “Electrical Characteristic: 3V Application” on page 33 changed
•
Section 15 “Electrical Characteristic: 5V Application” on page 34 changed
•
Section 18 “Ordering Information” on page 39 changed
•
Put datasheet in the newest template
4971D-INDCO-07/12
4971C-INDCO-04/09
4971B-INDCO-10/07
•
Benefits on page 2 updated
•
Put datasheet in the newest template
40
ATA8201/ATA8202 [DATASHEET]
4971G–INDCO–09/14
X
Atmel Corporation
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