Microchip-Tech-ATSAMR34J18B-I-7JX

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SAM R34/R35  
®
SAM R34/R35 Low Power LoRa
 
Sub-GHz SiP Datasheet  
Introduction  
The SAM R34/R35 is a family of ultra-low power microcontrollers combined with a UHF transceiver  
®
®
communication interface. It uses a 32-bit ARM
 
Cortex -M0+
 
processor and offers up to 256 KB of  
Flash and 40 KB of SRAM, including an area of battery backed-up SRAM. The UHF transceiver supports  
®
LoRa and
 
FSK modulation. LoRa technology is a spread spectrum protocol optimized for low data-rate,  
ultra-long range signaling. It is ideal for battery-powered remote sensors and controls.  
The SAM R34 includes an integrated microcontroller with USB and the UHF transceiver, making it  
suitable for USB dongle applications or for software updates via USB. The SAM R35 offers the same  
microcontroller functions along with the UHF transceiver without the USB interface.  
Features  
Operational Features  
• Processor:  
®
– ARM
 
Cortex -M0+ CPU running at up to 48 MHz (2.46CoreMark
 
/MHz)  
– Single-Cycle
 
Hardware Multiplier  
– Micro
 
Trace Buffer (MTB)  
• Memory:  
– In-System
 
Self-Programmable Flash Memory, with options for sizes – 256 KB, 128 KB or 64 KB  
– Static
 
Random Access Memory (SRAM) with options for sizes – 32 KB, 16 KB or 8 KB  
– Low
 
power SRAM Memory with option for sizes – 4 KB or 8 KB  
• System:  
– Power-on
 
Reset (POR) and Brown-out Reset  
– Internal
 
and External Clock Options with 48 MHz Digital Frequency Locked Loop (DFLL48M)  
and 48 MHz to 96 MHz Fractional Digital Phase Locked Loop (FDPLL96M)  
– External
 
Interrupt Controller (EIC)  
– Up
 
to 16 External Interrupts  
– One
 
Non-Maskable Interrupt  
– Two
 
Pin Serial Wire Debug (SWD) Programming,
T
e
st and Debugging Interfaces  
• Operating
 
Voltage: 1.8V- 3.6V  
• Low
 
Power Consumption  
– Transceiver:  
• RX
 
= 16 mA (typical)  
• RFO_HF
 
= 33 mA (typical)  
• PA_BOOST
 
= 95 mA (typical)  
DS70005356C-page 1  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
– MCU:  
• Idle,
 
Standby, and Backup Sleep Modes  
• SleepWalking
 
peripherals  
•
T
e
mperature
 
Range: -40°C to +85°C (Industrial)  
RF/Analog Features  
• Integrated
 
LoRa
T
e
chnology Transceiver:  
– Tri-band
 
Coverage  
• 137
 
MHz to 175 MHz  
• 410
 
MHz to 525 MHz  
• 862
 
MHz to 1020 MHz  
– +20
 
dBm (100 mW) Max Power (VDDANA > 2.4 VDC)  
– +17
 
dBm (50 mW) Max Power (Regulated PA)  
– +13
 
dBm (20 mW) High-efficency PA  
• High
 
Sensitivity:  
™
– Down
 
to -136 dBm (LoRaWAN
 
protocol compliant modes)  
– Down
 
to -148 dBm (proprietary narrowband modes)  
• Up
 
to 168 dB Maximum Link Budget  
• Robust
 
Front-End: IIp3 = -11 dBm  
• Excellent
 
Blocking Immunity  
• Low
 
RX Current of 17 mA (typical)  
• Fully
 
Integrated Synthesizer with a Resolution of 61 Hz  
• LoRa
 
T
e
chnology, (G)FSK, (G)MSK and OOK Modulation  
• Preamble
 
Detection  
• 127
 
dB Dynamic Range RSSI  
• Automatic
 
RF Sense and CAD with Ultra-Fast Automatic Frequency Control (AFC) Packet Engine up  
to 256 bytes with Cyclic Redundancy Check (CRC)  
Peripheral Information  
• 16-Channel
 
Direct Memory Access Controller (DMAC)  
• 12-Channel
 
Event System  
• Three
 
16-bit Timer/Counters (TC), configurable as either of the following:  
– One
 
8-bit TC with compare/capture channels  
– One
 
16-bit TC with compare/capture channels  
– One
 
32-bit TC with compare/capture channels, by using two TCs  
• Two
 
24-bit and one 16-bit Timer/Counters for Control (TCC), with Extended Functions:  
– Up
 
to four compare channels with optional complementary output  
– Generation
 
of synchronized Pulse Width Modulation (PWM) pattern across port pins  
– Deterministic
 
fault protection, fast decay and configurable dead-time between complementary  
output  
– Dithering
 
that increases resolution with up to five bit and reduces quantization error  
• 32-bit
 
Real Time Counter (RTC) with Clock/Calendar Function  
• Watchdog
 
Timer (WDT)  
DS70005356C-page 2  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
• CRC-32
 
Generator  
• One
 
Full-Speed (12 Mbps) Universal Serial Bus (USB) 2.0 Interface:  
– Embedded
 
host and device function  
– Eight
 
endpoints  
• Up
 
to Five Serial Communication Interfaces (SERCOM), each configurable to operate as either of the  
following:  
– USART
 
with full-duplex and single-wire half-duplex configuration  
– I2C
 
up to 3.4 MHz  
– Serial
 
Peripheral Interface (SPI)  
– Local
 
Interconnect Network (LIN) Slave  
• One
 
12-bit, 1 Msps Analog-to-Digital Converter (ADC) with up to Eight External Channels:  
– Differential
 
and single-ended input  
– Automatic
 
offset and gain error compensation  
– Oversampling
 
and decimation in hardware to support 13-, 14-, 15-, or 16-bit resolution  
• Two
 
Analog Comparators (AC) with Window Compare Function  
• Peripheral
 
T
o
uch Controller (PTC):  
– 18-channel
 
capacitive touch and proximity sensing  
Package Information  
• 27
 
Programmable I/O Pins  
• 64
 
Lead Ball Grid Array (BGA)  
DS70005356C-page 3  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Table of Contents  
Introduction……………………………………………………………………………………………………….1  
Features………………………………………………………………………………………………………….. 1  
1. Description…………………………………………………………………………………………………..6  
2. Configuration
 
Summary………………………………………………………………………………..
.
7  
3. Ordering
 
Information for SAM R34/R35………………………………………………………….. 9  
3.1. SAM
 
R34/R35 Ordering Codes………………………………………………………………………………………
.
9  
4. System
 
Introduction…………………………………………………………………………………….10  
4.1. SAM
 
R34/R35 Pinout Details……………………………………………………………………………………….. 10  
4.2. SiP
 
Block Diagram……………………………………………………………………………………………………… 10  
4.3. Peripheral
 
Key
T
a
ble…………………………………………………………………………………………………… 11  
5. I/O
 
Multiplexing and Considerations………………………………………………………………14  
5.1. Multiplexed
 
Signals…………………………………………………………………………………………………….. 14  
5.2. Internal
 
Multiplexed Signals…………………………………………………………………………………………. 15  
5.3. Other
 
Functions…………………………………………………………………………………………………………..16  
6. Signal
 
Description……………………………………………………………………………………….18  
6.1. Signal
 
Details…………………………………………………………………………………………………………….. 18  
7. Processor
 
and Architecture…………………………………………………………………………. 21  
7.1. Cortex
 
M0+ Processor………………………………………………………………………………………………… 21  
7.2. Nested
 
Vector Interrupt Controller………………………………………………………………………………….22  
7.3. Micro
 
Trace Buffer………………………………………………………………………………………………………
.
2
4  
7.4. High-Speed
 
Bus System……………………………………………………………………………………………… 25  
8. Application
 
Schematic Introduction………………………………………………………………. 30  
8.1. SAM
 
R34/R35 Basic Application Schematic…………………………………………………………………… 30  
8.2. SAM
 
R34/R35 Bill of Materials……………………………………………………………………………………..
.
3
2  
9. Transceiver
 
Circuit Description……………………………………………………………………..34  
9.1. Transceiver
 
Pin Description…………………………………………………………………………………………..34  
9.2. Transceiver
 
Validation…………………………………………………………………………………………………. 35  
10. Microcontroller Interface……………………………………………………………………………..
.
3
6  
11. Electrical Characteristics…………………………………………………………………………….. 38  
11.1. Absolute
 
Maximum Ratings…………………………………………………………………………………………..38  
11.2. General
 
Operating Conditions……………………………………………………………………………………….38  
11.3. Performance
 
Characteristics………………………………………………………………………………………..
.
3
9  
12. SAM R34/R35 Package Information………………………………………………………………44  
DS70005356C-page 4  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
12.1. Package
 
Drawings……………………………………………………………………………………………………… 44  
12.2. SAM
 
R34/R35 Land Pattern………………………………………………………………………………………….45  
13. Best Practices for Designers……………………………………………………………………….. 46  
13.1. Introduction…………………………………………………………………………………………………………………46  
13.2. Power
 
Supply…………………………………………………………………………………………………………….. 46  
13.3. External
 
Reset Circuit…………………………………………………………………………………………………..49  
13.4. Unused
 
or Unconnected Pins………………………………………………………………………………………..50  
13.5. Clocks
 
and Crystal Oscillators……………………………………………………………………………………….50  
13.6. Programming
 
and Debug Ports……………………………………………………………………………………..52  
14. Reference Documentation……………………………………………………………………………57  
15. Document Revision History…………………………………………………………………………. 58  
The Microchip Web Site…………………………………………………………………………………… 59  
Customer Change Notification Service………………………………………………………………..59  
Customer Support…………………………………………………………………………………………… 59  
Microchip Devices Code Protection Feature……………………………………………………….. 59  
Legal Notice…………………………………………………………………………………………………….60  
Trademarks……………………………………………………………………………………………………. 60  
Quality Management System Certified by DNV…………………………………………………….61  
Worldwide Sales and Service…………………………………………………………………………….62  
DS70005356C-page 5  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Description  
1.  
Description  
The SAM R34/R35 devices are a series of ultra-low power microcontrollers equipped with a UHF  
transceiver. It uses the 32-bit ARM Cortex-M0+ processor at max. 48 MHz (2.46 CoreMark/MHz) and  
offers 256 KB of Flash and 40 KB of SRAM. Sophisticated power management technologies, such as  
power domain gating, SleepWalking, ultra-low power peripherals and more, allow for very low line-power  
consumptions.  
The UHF transceiver supports LoRa and FSK modulation schemes. The LoRa technology is optimized for  
long-range communication with minimal line-power demand. The transceiver can work from frequencies  
of 137 MHz to 1020 MHz. Maximum transmit power is +20 dBm without an external amplification.  
Operational frequency bands and power limits are defined by local regulations and the LoRa Alliance.  
LoRa network stack regional options insure compliance. FSK modulation is also supported for  
applications including IEEE 802.15.4g, WiSUN, and legacy proprietary networks.  
All devices have accurate low power external and internal oscillators. Different clock domains can be  
independently configured to run at different frequencies, enabling power-saving by running each  
peripheral at its optimal clock frequency, thus maintaining a high CPU frequency while reducing power  
consumption.  
The SAM R34/R35 devices have four software-selectable sleep modes: Idle, Standby, Backup and Off. In  
Idle mode, the CPU is stopped while all other functions may be kept running. In Standby mode, all clocks  
and functions are stopped except those selected to continue running. In this mode all RAMs and logic  
contents are retained. The device supports SleepWalking, which allows some peripherals to wake-up  
from sleep based on predefined conditions, thus allowing some internal operations like DMA transfer  
and/or the CPU to wake-up only when needed; for example, when a threshold is crossed or a result is  
ready. The event system supports synchronous and asynchronous events, allowing peripherals to  
receive, react to and send events even in Standby mode. Off mode is not advised, as high impedance on  
the internal SPI bus results in metastability.  
The SAM R34/R35 devices have two software-selectable performance levels (PL0 and PL2) allowing the  
user to scale the lowest core voltage level that supports the operating frequency.
T
o
f
urther minimize  
current consumption, specifically leakage dissipation, the devices utilize a power domain gating technique  
with retention to turn off some logic areas while keeping their logic state. This technique is fully handled in  
hardware.  
The Flash program memory can be reprogrammed in-system through the Serial Wire Debug (SWD)  
interface. The same interface can also be used for non-intrusive on-chip debugging of application code. A  
boot loader running in the device can use any communication interface to download and upgrade the  
application program in the Flash memory.  
The SAM R34/R35 devices are supported with a full suite of programs and system development tools,  
including C compilers, macro assemblers, program debugger/simulators, programmers, and evaluation  
kits.  
DS70005356C-page 6  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Configuration Summary  
2.  
Configuration Summary  
Table 2-1.ꢀConfiguration Summary  
Parameter  
SAM R34  
SAM R35  
T
o
tal Pins  
64  
64  
27  
General Purpose I/O pins
 
27  
(GPIOs)  
Flash  
256 KB  
256 KB  
8 KB  
32 KB  
8 KB  
3
Flash RWW Section  
System SRAM  
Low Power SRAM  
8 KB  
32 KB  
8 KB  
3
Timer Counter (TC)  
Instances  
Waveform Output  
Channels per TC  
Instance  
2
2
Timer Counter for Control
 
3  
(TCC) Instances  
3
Waveform Output  
Channels per TCC  
4/2/2  
4/2/2  
USB Interface  
1
0
Serial Communication  
Interface (SERCOM)  
Instances  
5+1

(1)  

5+1

(1)  

Analog-to-Digital  
Converter (ADC)  
Channels  
8
2
8
2
Analog Comparators  
(AC)  
Real-Time Counter (RTC)
 
Yes  
Y
e
s  
RTC Alarms  
1
1
RTC Compare Values  
1 for 32-bit value or  
2 for 16-bit values  
1 for 32-bit value or  
2 for 16-bit values  
External Interrupt Lines  
15  
15  
Maximum CPU  
Frequency  
48 MHz  
48 MHz  
Package  
BGA  
BGA  
DS70005356C-page 7  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Configuration Summary  
………..continued  
Parameter  
SAM R34  
SAM R35  
External  
32.768 kHz Crystal  
External  
Oscillator (XOSC32K)  
Oscillators  
• 16
 
MHz crystal oscillator for TRX
 
• 16
 
MHz crystal oscillator for TRX  
(XOSCRF)  
(XOSCRF)  
• 0.4-32
 
MHz crystal oscillator  
(XOSC)  
• 0.4-32
 
MHz crystal oscillator  
(XOSC)  
• 32.768
 
kHz external oscillator  
(OSC32K)  
• 32.768
 
kHz external oscillator  
(OSC32K)  
• 32
 
kHz ultra-low power internal  
oscillator (OSCULP32K)  
• 32
 
kHz ultra-low power internal  
oscillator (OSCULP32K)  
• 8
 
MHz high-accuracy internal  
oscillator (OSC8M)  
• 8
 
MHz high-accuracy internal  
oscillator (OSC8M)  
• 48
 
MHz Digital Frequency  
Locked Loop (DFLL48M)  
• 48
 
MHz Digital Frequency  
Locked Loop (DFLL48M)  
• 96
 
MHz Fractional Digital  
• 96
 
MHz Fractional Digital  
Phased Locked Loop (FDPLL96)  
Phased Locked Loop (FDPLL96)  
Event System Channels
 
12  
12  
SW Debug Interface  
Y
e
s  
Y
e
s  
Y
e
s  
Y
e
s  
Watchdog Timer (WDT)  
1. SERCOM4
 
is internally connected to the Transceiver (TRX).  
DS70005356C-page 8  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Ordering Information for SAM R34/R35  
3.  
Ordering Information for SAM R34/R35  
Figure 3-1.ꢀSAM R34/R35 Ordering Information  
34  
J
18  
B
T-  
I /  
xxx  
ATSAMR  
Product Family  
SAMR = SoC Microcontroller with RF  
Product Series  
34 = Cortex M0+ CPU + DMA + USB + LoRa Transeiver  
35 = Cortex M0+ CPU + DMA + LoRa Transeiver  
Pin Count  
J = 64 Pins  
Flash Memory Density  
16 = 64 KB  
17 = 128 KB  
18 = 256 KB  
Device Variant  
B = Release to Production  
Package Carrier  
T =
T
a
pe and Reel  
T
e
mperature Rating  
I = – 40 to + 85

o

C  
Package Type  
7JX = 64 Ball 6×6 mm TFBGA  
3.1  
SAM R34/R35 Ordering Codes  
Table 3-1.ꢀSAM R34/R35 Ordering Codes  
Ordering Code  
Description  
ATSAMR34J16BT-I/7JX  
ATSAMR34J17BT-I/7JX  
LoRa SiP Transceiver USB 64K Flash 8K SRAM, 4KB LP SRAM, T&R  
LoRa SiP Transceiver USB 128K Flash 16K SRAM, 8KB LP SRAM,  
T&R  
ATSAMR34J18BT-I/7JX  
LoRa SiP Transceiver USB 256K Flash 32K SRAM, 8KB LP SRAM,  
T&R  
ATSAMR35J16BT-I/7JX  
ATSAMR35J17BT-I/7JX  
ATSAMR35J18BT-I/7JX  
LoRa SiP Transceiver 64K Flash 8K SRAM, 4KB LP SRAM, T&R  
LoRa SiP Transceiver 128K Flash 16K SRAM, 8KB LP SRAM, T&R  
LoRa SiP Transceiver 256K Flash 32K SRAM, 8KB LP SRAM, T&R  
Note:ꢀ
The device variant (last letter of the ordering number) is independent of the die revision.  
DS70005356C-page 9  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
System Introduction  
4.  
System Introduction  
4.1  
SAM R34/R35 Pinout Details  
Figure 4-1.ꢀSAM R34/R35 Pin Placement  
1
2
3
4
5
6
7
8
A
B
C
D
E
RFI_HF  
RFO_HF  
VBAT_RF  
VR_PA  
GND_RF  
GND_RF  
VDDANA  
RXTX  
PA00  
GNDANA  
PB03  
PA01  
PB02  
VDDCORE  
GND  
VSW  
RESET*  
PA28  
VDDIN  
GND  
VDDIO2  
PA24  
PA05  
PA30  
PB23  
PA25  
PA04  
GND  
PA31  
GND  
PA23  
PA22  
GND_RF  
PA_BOOST  
RFO_LF  
RFI_LF  
GNDANA  
GND_RF  
GND_RF  
VR_ANA  
PA06  
PA27  
PB22  
PA17  
PA18  
PA19  
F
PA07  
PA08  
PA09  
PA13  
PA16  
PA14  
G
H
GND_RF  
VBAT_ANA  
VDDI01  
VR_DIG  
GND_RF  
GND_RF  
GND_RF  
XTA  
GND_RF  
XTB  
PA15  
VBAT_DIG  
4.2  
SiP Block Diagram  
The following figure illustrates the SAM R34/R35 System-in-Package (SiP) block diagram.  
DS70005356C-page 10  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
System Introduction  
Figure 4-2.ꢀSystem Block Diagram with MCU and Transceiver  
IOBUS  
256/128/64KB  
NVM  
32/16/8KB  
RAM  
CORTEX-M0+  
PROCESSOR  
Fmax 48 MHz  
SWCLK  
SWDIO  
SERIAL  
WIRE  
NVM Controller  
Cache  
SRAM  
CONTROLLER  
DEVICE  
SERVICE  
UNIT  
M
S
S
S
M
DP  
HIGH SPEED  
BUS MATRIX  
USB FS  
DEVICE  
MINI-HOST  
DM  
SOF 1KHZ  
S
(SAMR34 ONLY)  
M
S
8/8/4KB  
RAM  
AHB-APB  
BRIDGE B  
S
S
M
LP SRAM  
CONTROLLER  
S
LOW POWER  
BUS MATRIX  
PERIPHERAL  
ACCESS  
M
DMA  
CONTROLLER  
S
S
S
EVENT  
AHB-APB  
BRIDGE E  
AHB-APB  
BRIDGE A  
AHB-APB  
BRIDGE D  
AHB-APB  
BRIDGE C  
PAD0  
PAD1  
DMA  
DMA  
PAD2  
PAD3  
5 x SERCOM  
MAIN CLOCKS  
CONTROLLER  
WO0  
WO1  
4 x TIMER / COUNTER  
EVENT  
OSCILLATORS CONTROLLER  
OSC16M  
WO0  
WO1  
(2)  
WOn  
DMA  
3x TIMER / COUNTER  
FOR CONTROL  
DFLL48M  
EVENT  
XIN  
XOSC  
XOUT  
FDPLL96M  
DMA  
AES  
DMA  
GENERIC CLOCK  
GCLK_IO[7..0]  
TRNG  
CONTROLLER  
WATCHDOG  
TIMER  
POWER  
MANAGER  
OSC32K CONTROLLER  
XIN32  
XOUT32  
WO0  
WO1  
DMA  
XOSC32K  
OSCULP32K  
OSC32K  
TIMER / COUNTER  
AIN[19..0]  
DMA  
8-CHANNEL  
12-bit ADC 1MSPS  
VREFA  
VREFB  
SUPPLY CONTROLLER  
EVENT  
BOD33  
VREF  
VREG  
AIN[3..0]  
2 ANALOG  

EVENT

COMPARATORS  
X[15..0]  
Y[15..0]  
PERIPHERAL  
TOUCH  
CONTROLLER  
RESET  
EXTWAKEx  
RESET  
CONTROLLER  
EVENT  
IN[2..0]  
OUT  
REAL TIME  
COUNTER  
3 x CCL  
EVENT  
EVENT  
PAD0  
PAD1  
EXTINT[15..0]  
NMI  
EXTERNAL INTERRUPT  
CONTROLLER  
SERCOM  
PAD2  
PAD3  
DIO(0…5)  
SERCOM4  
CONFIGURATION REGISTERS AND FIFO  
DEMOD  
MODULATOR  
LoRa/FSK/OOK  
LoRa/FSK/OOK  
ADC  
MUX  
i
Q
HIGH BAND  
FRAC-N PLL  
OSC  
RF  
LOW BAND  
FRAC-N PLL  
PA  
HF  
PA  
HP  
PA  
HF  
4.3  
Peripheral Key Table  
The following table lists all the peripherals supported in SAM R34 and SAM R35. Also, provides the  
references to relevant sections for detailed information.  
DS70005356C-page 11  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
System Introduction  
Note:ꢀ
The peripherals that are not listed in the following table must not be used.  
Table 4-1.ꢀPeripheral Key Table  
Peripheral  
Description  
Reference  
Document  
Topic # and Keyword  
Notes  
AC  
Analog Comparator  
1
1
43. AC – Analog Comparators  
ADC  
Analog-to-Digital  
Converter  
42. ADC – Analog-to-Digital  
Converter  
AES  
Advanced Encryption  
Engine  
1
38. AES – Advanced Encryption  
Standard  
BOD33  
CCL  
Brown-out Detector  
1
1
23. SUPC – Supply Controller  
Configurable Custom  
Logic  
40. CCL – Configurable Custom  
Logic  
CRC  
DMA  
EIC  
Cyclic Redundancy  
Check-sum  
1
1
1
15.11.3 32-bit Cyclic  
Redundancy Check CRC32  
Direct Memory Access  
Controller  
26. DMAC – Direct Memory  
Access Controller  
External Interrupt  
27. EIC – External Interrupt  
Controller  
EVSYS  
GCLK  
Event System  
1
1
30. EVSYS – Event System  
Generic Clock Control  
17. GCLK – Generic Clock  
Controller  
I2C  
Inter-integrated Circuit  
Interface  
1
34. SERCOM I2C – SERCOM  
Inter-integrated Circuit  
Peripheral function F-  
SERCOM4 pins  
(PB30, PB31, PC18,  
PC19) are internally  
connected to  
Transceiver. For  
details, refer to
10.  
Microcontroller  
Interface
.  
MCLK  
Main Clock Control  
1
1
18. MCLK – Main Clock  
NVMCTRL  
Nonvolatile Memory  
Controller  
28. NVMCTRL – Nonvolatile  
Memory Controller  
OSC32KCTRL 32
 
kHz Clock  
1
1
22. OSC32KCTRL – 32KHz  
Oscillators Controller  
OSCCTRL  
Clock Control  
21. OSCCTRL – Oscillators  
Controller  
PA_BOOST  
PM  
RF Output High-power  
Power Management  
GPIO Port Controller  
Power-On Reset  
5
1
1
1
5.4.2. RF Power Amplifiers  
20. PM – Power Manager  
29. PORT – I/O Pin Controller  
23. SUPC – Supply Controller  
PORT  
Limited to 27 ports  
PORT  
DS70005356C-page 12  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
System Introduction  
………..continued  
Peripheral  
Description  
Reference  
Document  
Topic # and Keyword  
Notes  
PTC  
Peripheral
T
o
uch  
Controller (RC)  
1
45. PTC – Peripheral
T
o
uch  
Controller  
RFI_HF  
RF Input High  
Frequency  
5
5.5. Receiver Description  
RFI_LF  
RF Input Low Frequency
 
5  
5.5. Receiver Description  
5.4.2. RF Power Amplifiers  
RFO_HF  
RF Output High  
Frequency  
5
RFO_LF  
RF Output Low  
Frequency  
5
5.4.2. RF Power Amplifiers  
RSTC  
RTC  
SPI  
Reset Control  
1
1
1
19. RSTC – Reset Controller  
Real-Time Counter  
25. RTC – Real-Time Counter  
Serial Peripheral  
Interface  
33. SERCOM SPI – SERCOM  
Serial Peripheral Interface  
Peripheral function F-  
SERCOM4 pins  
(PB30, PB31, PC18,  
PC19) are internally  
connected to  
Transceiver. For  
details, refer to
10.  
Microcontroller  
Interface
.  
TC  
Timer Counter  
1
1
35. TC – Timer/Counter  
TCC  
Timer Counter for  
Control  
36. TCC – Timer/Counter for  
Control Applications  
TRNG  
Random Number  
Generator  
1
1
37. TRNG – True Random  
Number Generator  
USART  
Universal Synchronous  
and Asynchronous  
Receiver/Transmitter  
32. SERCOM USART –  
SERCOM Universal  
Synchronous and  
Peripheral function F-  
SERCOM4 pins  
(PB30, PB31, PC18,  
PC19) are internally  
connected to  
Asynchronous Receiver and  
Transmitter  
Transceiver.  
USB  
Full-speed Universal  
1
39. USB – Universal Serial Bus
 
SAMR34 Only. For  
Serial Bus 2.0 interface  
details, refer to
10.  
Microcontroller  
Interface
.  
VBAT  
WDT  
External Battery Input  
Watchdog Timer  
RF Oscillator  
1
1
5
23. SUPC – Supply Controller  
24. WDT – Watchdog Timer  
5.3. Frequency Synthesis  
XTA/B  
Note:ꢀ
For more details on the peripherals supported by the SAM R34, refer to
T
a
ble 5-1
.  
DS70005356C-page 13  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
I/O Multiplexing and Considerations  
5.  
I/O Multiplexing and Considerations  
5.1  
Multiplexed Signals  
By default, each pin is controlled by the PORT as a general purpose I/O and alternatively may be  
assigned to one of the peripheral functions A, B, C, D, E,
F
,
G
, H or I.
T
o
e
nable a peripheral function on a  
pin, the Peripheral Multiplexer Enable bit in the Pin Configuration register corresponding to that pin  
(PINCFGn.PMUXEN, n = 0..31) in the PORT must be written to ‘1’. The selection of peripheral functions  
A to H are done by writing to the Peripheral Multiplexing Odd and Even bits in the Peripheral Multiplexing  
register (PMUXn.PMUXE/O) in the POR
T
.  
Table 5-1.ꢀPort Function Multiplexing  
(1)(2)  
SAM  
I/O Pin
 
Supply  
A
B
C
D
E
F
G
H
I
R34/R35  
Pin  
(1)(2)  
EIC  
RSTC  
REF  
ADC  
AC  
PTC X-
 
PTC Y-
 
SERCOM  
SERCOM- ALT  
TC/TCC  
TCC  
COM  
AC/GCLK/  
SUPC  
CCL  
lines  
lines  
A3  
A4  
D3  
C4  
E3  
F3  
F4  
F5  
F6  
F8  
G8  
F7  
E6  
E7  
E8  
D8  
D7  
B8  
C8  
E5  
C7  
PA00  
PA01  
PA04  
PA05  
PA06  
PA07  
PA08  
PA09  
PA13  
PA14  
PA15  
PA16  
PA17  
PA18  
PA19  
PA22  
PA23  
PA24  
PA25  
PB22  
PB23  
VSWOUT EXTINT[0]  
VSWOUT EXTINT[1]  
EXTWAKE[0]  
EXTWAKE[1]  
–
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM1/  
PAD[0]  
TCC2/WO[0]  
TCC2/WO[1]  
TCC0/WO[0]  
TCC0/WO[1]  
TCC1/WO[0]  
TCC1/WO[1]  
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM1/  
PAD[1]  
–
–
–
VDDANA  
VDDANA  
VDDANA  
VDDANA  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIN  
VDDIN  
EXTINT[4]  
EXTINT[5]  
EXTINT[6]  
EXTINT[7]  
NMI  
EXTWAKE[4] VREFB AIN[4]  
AIN[0]  
AIN[1]  
AIN[2]  
AIN[3]  
–
–
–
SERCOM0/  
PAD[0]  
–
–
CCL0/ IN[0]  
CCL0/ IN[1]  
CCL0/ IN[2]  
EXTWAKE[5]  
–
AIN[5]  
AIN[6]  
AIN[7]  
AIN[16]  
AIN[17]  
—
–
–
SERCOM0/  
PAD[1]  
–
–
EXTWAKE[6]  
–
–
Y[4]  
–
SERCOM0/  
PAD[2]  
–
–
EXTWAKE[7]  
–
–
SERCOM0/  
PAD[3]  
–
–
CCL0/  
OUT[0]  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–
X[0]  
X[1]  
—
Y[6]  
Y[7]  
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM0/  
PAD[0]  
SERCOM2/  
PAD[0]  
TCC0/WO[0] TCC1/  
WO[2]  
–
–
CCL1/ IN[3]  
CCL1/ IN[1]  
—
EXTINT[9]  
EXTINT[13]  
EXTINT[14]  
EXTINT[15]  
EXTINT[0]  
EXTINT[1]  
EXTINT[2]  
EXTINT[3]  
EXTINT[6]  
EXTINT[7]  
EXTINT[12]  
EXTINT[13]  
EXTINT[6]  
EXTINT[7]  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM0/  
PAD[1]  
SERCOM2/  
PAD[1]  
TCC0/WO[1] TCC1/  
WO[3]  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM2/  
PAD[1]  
SERCOM4/  
PAD[1]  
TCC2/WO[1] TCC0/  
WO[7]  
AC/CMP[1]  
GCLK_IO[0]  
GCLK_IO[1]  
GCLK_IO[2]  
GCLK_IO[3]  
AC/CMP[0]  
AC/CMP[1]  
GCLK_IO[6]  
GCLK_IO[7]  
—
—
—
SERCOM2/  
PAD[2]  
SERCOM4/  
PAD[2]  
TC4/ WO[0]  
TC4/ WO[1]  
TCC0/  
WO[4]  
—
—
—
SERCOM2/  
PAD[3]  
SERCOM4/  
PAD[3]  
TCC0/  
WO[5]  
—
—
X[4]  
X[5]  
X[6]  
X[7]  
X[10]  
X[11]  
—
SERCOM1/  
PAD[0]  
SERCOM3/  
PAD[0]  
TCC2/WO[0] TCC0/  
WO[6]  
CCL0/ IN[0]  
CCL0/ IN[1]  
CCL0/ IN[2]  
—
SERCOM1/  
PAD[1]  
SERCOM3/  
PAD[1]  
TCC2/WO[1] TCC0/  
WO[1]  
—
SERCOM1/  
PAD[2]  
SERCOM3/  
PAD[2]  
TC4/ WO[0]  
TC4/ WO[1]  
TC0/ WO[0]  
TC0/ WO[1]  
TC1/ WO[0]  
TC1/ WO[1]  
TC3/ WO[0]  
TC3/ WO[1]  
TCC0/  
WO[2]  
—
SERCOM1/  
PAD[3]  
SERCOM3/  
PAD[3]  
TCC0/  
WO[3]  
CCL0/  
OUT[0]  
—
SERCOM3/  
PAD[0]  
SERCOM5/  
PAD[0]  
TCC0/  
WO[4]  
CCL2/ IN[0]  
CCL2/ IN[1]  
CCL2/ IN[2]  
—
SERCOM3/  
PAD[1]  
SERCOM5/  
PAD[1]  
TCC0/  
WO[5]  
USB/SOF 1  
kHz[6]  
—
SERCOM3/  
PAD[2]  
SERCOM5/  
PAD[2]  
TCC1/  
WO[2]  
USB/ DM[6]  
—
—
SERCOM3/  
PAD[3]  
SERCOM5/  
PAD[3]  
TCC1/  
WO[3]  
USB/ DP[6]  
—
CCL2/  
OUT[2]  
—
—
—
—
SERCOM5/  
PAD[2]  
—
—
—
—
GCLK_IO[0]  
GCLK_IO[1]  
CCL0/ IN[0]  
—
—
SERCOM5/  
PAD[3]  
CCL0/  
OUT[0]  
E4  
C6  
PA27  
PA28  
VDDIN  
VDDIN  
EXTINT[15]  
EXTINT[8]  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
GCLK_IO[0]  
GCLK_IO[0]  
—
—
DS70005356C-page 14  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
I/O Multiplexing and Considerations  
………..continued  
(1)(2)  
SAM  
I/O Pin
 
Supply  
A
B
C
D
E
F
G
H
I
R34/R35  
Pin  
(1)(2)  
EIC  
RSTC  
REF  
ADC  
AC  
PTC X-
 
PTC Y-
 
SERCOM  
SERCOM- ALT  
TC/TCC  
TCC  
COM  
AC/GCLK/  
SUPC  
CCL  
lines  
lines  
C5  
D5  
B4  
C3  
PA30  
PA31  
PB02  
PB03  
VDDIN  
VDDIN  
EXTINT[10]  
EXTINT[11]  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM1/  
PAD[2]  
TCC1/WO[0]  
TCC1/WO[1]  
TC2/ WO[0]  
TC2/ WO[1]  
—
—
—
—
SWCLK  
GCLK_IO[0]  
—
CCL1/ IN[0]  
(3)  
—
—
—
—
—
—
—
SERCOM1/  
PAD[3]  
SWDIO  
—
CCL1/  
OUT[1]  
VSWOUT EXTINT[2]  
VSWOUT EXTINT[3]  
AIN[10]  
AIN[11]  
SERCOM5/  
PAD[0]  
SUPC/ OUT[1]  
SUPC/VBAT  
CCL0/  
OUT[0]  
SERCOM5/  
PAD[1]  
—
1. All
 
analog pin functions are on peripheral function B. Peripheral function B must be selected to  
disable the digital control of the pin.  
2. Only
 
some pins can be used in SERCOM I2C mode. See
5.3.3 SERCOM
 
I2C Pins
.  
3. This
 
function is only activated in the presence of a debugger.  
4. When
 
an analog peripheral is enabled, the analog output of the peripheral interferes with the  
alternative functions of this pin. This is also true even when the peripheral is used for internal  
purposes.  
5. Clusters
 
of multiple GPIO pins are sharing the same supply pin. See
5.3.4 GPIO
 
Cluster
.  
6. USB
 
is not available on the SAM R35 devices.  
5.2  
Internal Multiplexed Signals  
By default, each pin is controlled by the PORT as a general purpose I/O and alternatively may be  
assigned to one of the peripheral functions A, B, C, D, E,
F
,
G
, H or I.
T
o
e
nable a peripheral function on a  
pin, the Peripheral Multiplexer Enable bit in the Pin Configuration register corresponding to that pin  
(PINCFGn.PMUXEN, n = 0-31) in the PORT must be written to ‘1’. The selection of peripheral functions A  
to H are done by writing to the Peripheral Multiplexing Odd and Even bits in the Peripheral Multiplexing  
register (PMUXn.PMUXE/O) in the POR
T
.  
Table 5-2.ꢀInternal Multiplexed Signals  
Internal  
Signal  
I/O Pin
 
Supply  
Type  
A
B
C
D
E
F
G
H
I
EIC  
RSTC REF ADC  
AC PTC  
X-  
PTC  
SERCOM  
SERCOM-  
ALT  
TC/TCC TCC/  
SERCOM  
COM AC/GCLK/  
SUPC  
CCL  
Y-  
lines  
lines  
DIO0  
PB16  
PA11  
PA12  
PB17  
PA10  
PB00  
PB15  
PB30  
PB31  
PC18  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
I/O  
I/O  
I/O  
I/O  
I/O  
EXTINT[0]  
EXTINT[11]  
EXTINT[12]  
EXTINT[1]  
EXTINT[10]  
EXTINT[0]  
EXTINT[15]  
EXTINT[14]  
EXTINT[15]  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM5/  
PAD[0]  
–
TCC2/  
WO[0]  
TCC0/ WO[4]  
TCC0/ WO[3]  
TCC0/ WO[6]  
TCC0/ WO[5]  
TCC0/ WO[2]  
–
–
–
–
–
–
–
–
–
–
–
GCLK_IO[2]  
GCLK_IO[5]  
AC/CMP[0]  
GCLK_IO[3]  
GCLK_IO[4]  
SUPC_PSOK  
GCLK_IO[1]  
–
CCL3/  
IN[11]  
DIO1/  
DCLK  
AIN[19]  
X[3]  
Y[9]  
SERCOM0/  
PAD[3]  
SERCOM2/  
PAD[3]  
TCC1/  
WO[1]  
CCL1/  
OUT[1]  
DIO2/  
DATA  
–
–
–
SERCOM2/  
PAD[0]  
SERCOM4/  
PAD[0]  
TCC2/  
WO[0]  
–
DIO3  
DIO4  
DIO5  
RF_RST  
MOSI  
SEL  
–
–
–
SERCOM5/  
PAD[1]  
–
TCC2/  
WO[1]  
CCL3/  
OUT[3]  
AIN[18]  
X[2]  
Y[8]  
SERCOM0/  
PAD[2]  
SERCOM2/  
PAD[2]  
TCC1/  
WO[0]  
CCL1/  
IN[5]  
VDDANA I/O  
AIN[8]  
–
–
–
–
–
–
–
SERCOM5/  
PAD[2]  
TCC3/  
WO[0]  
CCL0/  
IN[1]  
VDDIO  
VDDIO  
VDDIO  
VDDIO  
I/O  
I/O  
I/O  
I/O  
–
–
–
–
X[15]  
SERCOM4/  
PAD[3]  
–
TCC0/  
WO[1]  
–
CCL3/  
IN[10]  
–
–
–
–
–
–
SERCOM5/  
PAD[0]  
TCC0/  
WO[0]  
SERCOM4/  
PAD[2]  
–
–
–
SERCOM5/  
PAD[1]  
TCC0/  
WO[1]  
SERCOM4/  
PAD[1]  
–
SCLK  
–
–
SERCOM4/  
PAD[3]  
–
DS70005356C-page 15  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
I/O Multiplexing and Considerations  
………..continued  
Internal  
Signal  
I/O Pin
 
Supply  
Type  
A
B
C
D
E
F
G
H
I
EIC  
RSTC REF ADC  
AC PTC  
X-  
PTC  
SERCOM  
SERCOM-  
ALT  
TC/TCC TCC/  
SERCOM  
COM AC/GCLK/  
SUPC  
CCL  
Y-  
lines  
lines  
MISO  
PC19  
VDDIO  
I/O  
–
–
–
–
–
–
–
–
–
–
SERCOM4/  
PAD[0]  
–
–
–
5.3  
Other Functions  
5.3.1  
Oscillator Pinout  
The oscillators are not mapped to the normal PORT functions, and their multiplexing is controlled by  
registers in the Oscillator Controller (OSCCTROL) and in the 32kHz Oscillators Controller  
(OSC32KCTRL).  
Table 5-3.ꢀOscillator Pinout  
Oscillator  
Supply  
Signal  
XIN  
I/O Port  
PA14  
XOSC  
VDDIO  
XOUT  
XIN32  
XOUT32  
PA15  
XOSC32K  
VSWOUT  
PA00  
PA01  
5.3.2  
Serial Wire Debug Interface Pins  
Only the SWCLK pin is mapped to the normal PORT functions. A debugger cold-plugging or hot-plugging  
detection will automatically switch the SWDIO port to the SWDIO function.  
Table 5-4.ꢀSerial Wire Debug Interface Pinout  
Signal  
Supply  
VDDIN  
VDDIN  
I/O Pin  
PA30  
SWCLK  
SWDIO  
PA31  
5.3.3  
SERCOM I

2

C Pins  
Table 5-5.ꢀSERCOM Pins Supporting I

2

C  
Device  
Pins Supporting I

2

C HS Mode  
SAM R34/R35  
PA08, PA09, PA13, PA16, PA17, PA22, PA23  
DS70005356C-page 16  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
I/O Multiplexing and Considerations  
5.3.4  
GPIO Cluster  
Table 5-6.ꢀGPIO Clusters  
Package Cluster GPIO  
Supply Pins Connected to  
the Cluster  
64 Pins  
1
2
PA31 PA30  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VDDIN C4/GND D4  
PA28 PA27 PB23 PB22  
VDDIN C4/GND D4 and  
VDDIO C6/GND C5  
3
PA25 PA24 PA23 PA22  
–
–
PA19 PA18 PA17 PA16 PA15 PA14 PA13 VDDIO
 
C6/GND C5 and  
VDDIO F3/GND F4  
4
5
6
–
–
PA09 PA08  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VDDIO F3/GND F4  
PA07 PA06 PA05 PA04  
VDDANA C1/GNDANA C3  
VDDANA C1/GNDANA C3  
–
–
PA01 PA00 PB03 PB02  
5.3.5  
TCC Configurations  
The SAML21 has three instances of the Timer/Counter for Control applications (TCC) peripheral,  
TCC<2:0>.  
Table 5-7.ꢀTCC Configuration Summary  
TCC Channels
 
Waveform Counter
 
Fault Dithering Output
 
Dead  
SWAP Pattern  
Generation  
No. (CC_NUM)
 
Output  
(WO_NUM)  
Size  
Matrix Time  
Insertion  
(DTI)  
Y
e
s  
—
0
1
2
4
2
2
8
24-bit  
24-bit  
16-bit  
Y
e
s
Y
e
s  
Y
e
s
Y
e
s  
Y
e
s  
Y
e
s  
—
Y
e
s  
—
Y
e
s  
4
2
Y
e
s  
—
—
—
—
Note:ꢀ
The number of CC register (CC_NUM)_ for each TCC corresponds to the number of compare/  
capture channels to ensure that a TCC can have more Waveform Outputs (WO_NUM) than CC registers.  
DS70005356C-page 17  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Signal Description  
6.  
Signal Description  
This section provides the required information to understand the origin and the function of each such  
signal. The nature of a SIP results in the situation where the package pins may be bonded to the  
microcontroller die or the transceiver die. There are also signals bonded in-between the two dies.  
6.1  
Signal Details  
This section provides the naming and functional description of the internal and external signals.
5. I/O  
Multiplexing and Considerations
describes the routing of these signals between the MCU core and  
transceiver subsystem and to the external package pins.  
Table 6-1.ꢀSignal Descriptions List  
Signal Name  
Function  
Type  
Analog Comparators (AC)  
AIN<3:0>  
AC analog inputs  
AC comparator outputs  
Analog  
Digital  
CMP<1:0>  
Analog Digital Converter (ADC)  
AIN<19:0>  
VREFB  
ADC analog inputs  
Analog  
Analog  
ADC voltage external reference B  
External Interrupt Controller (EIC)  
EXTINT<15:0>  
NMI  
External interrupts inputs  
External non-maskable interrupt input  
Digital  
Digital  
Reset Controller (RSTC)  
EXTWAKE<7:0> External
 
wake-up inputs  
Generic Clock Generator (GCLK)  
Digital  
GCLK_IO<7:0> Generic
 
clock (source clock inputs or generic clock generator output)
 
Digital  
Custom Control Logic (CCL)  
IN<8:0>  
Logic inputs  
Digital  
Digital  
OUT<2:0>  
Logic outputs  
Supply Controller (SUPC)  
VBAT  
External battery supply inputs  
Analog  
Digital  
Digital  
PSOK  
Main power supply OK input  
Logic outputs  
OUT<1:0>  
Power Manager (PM)  
RESETN  
Active low Reset input  
Digital  
Serial Communication Interface (SERCOMx)  
DS70005356C-page 18  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Signal Description  
………..continued  
Signal Name  
Function  
Type  
PAD<3:0>  
SERCOM Input/Output pads  
Digital  
Oscillators Control (OSCCTRL)  
XIN  
Crystal or external clock input  
Crystal output  
Analog/Digital  
Analog  
XOUT  
32KHz Oscillators Control (OSC32KCTRL)  
XIN32  
32KHz crystal or external clock input  
32KHz crystal output  
Analog/Digital  
Analog  
XOUT32  
Timer Counter (TCx)  
WO<1:0>  
Waveform outputs  
Digital  
Digital  
Timer Counter (TCCx)  
WO<7:0>  
Waveform outputs  
General Purpose I/O (PORT)  
PA01-PA00  
PA09-PA04  
PA25-PA22  
PA28-PA27  
PA03-PB02  
PA23-PB22  
Parallel I/O controller I/O Port A  
Digital  
Digital  
Digital  
Digital  
Digital  
Digital  
Parallel I/O controller I/O Port A  
Parallel I/O controller I/O Port A  
Parallel I/O controller I/O Port A  
Parallel I/O controller I/O Port B  
Parallel I/O controller I/O Port B  
Universal Serial Bus (USB)  
DP  
DP for USB (SAM R34 only)  
DM for USB (SAM R34 only)  
Digital  
Digital  
DM  
External RF Signals  
RF_XTB  
RF_XTA  
VR_DIG  
VBAT_ANA  
VR_ANA  
RFI_LF  
XTAL connection  
OSC  
XTAL connection or TCXO input  
OSC  
Regulated supply voltage for digital blocks  
Supply voltage for analog circuitry  
Regulated supply voltage for analog circuitry  
RF input for bands 2 and 3  
Reg Output  
Analog Power  
Reg Output  
RF Input  
RFO_LF  
PA_BOOST  
VR_PA  
RF output for bands 2 and 3  
RF Output  
RF Output  
Reg Output  
Optional high-power PA output, all frequency bands  
Regulated supply voltage for the PA  
DS70005356C-page 19  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Signal Description  
………..continued  
Signal Name  
Function  
Type  
VBAT_RF  
RFO_HF  
VBAT_DIG  
RXTX  
Supply voltage for RF blocks  
RF output for band 1  
RF Power  
RF Output  
Digital Power  
Digital I/O  
RF Input  
Supply voltage for digital blocks  
RX/TX switch control: High in TX  
RF input for band 1  
RFI_HF  
Internal Interconnect Signals  
DIO0  
Digital I/O, software configured  
I/O  
DIO1/DCLK  
DIO2/DATA  
DIO3  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
SPI clock input  
I/O  
I/O  
I/O  
DIO4  
I/O  
DIO5  
I/O  
SCLK  
Input  
Output  
Input  
Input  
I/O  
MISO  
SPI data output  
MOSI  
SPI data input  
SEL  
SPI chip select input  
RF_RST  
Reset trigger input  
DS70005356C-page 20  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
7.  
Processor and Architecture  
7.1  
Cortex M0+ Processor  
The SAM R34/R35 contains an ATSAML21 Die Revision C ARM Cortex-M0+ processor. The processor is  
®
based on the ARMv6 Architecture and Thumb
 
-2 ISA. The Cortex-M0+ is 100% instruction set  
compatible with its predecessor, the Cortex-M0 core, and upward compatible to Cortex-M3 and M4 cores.  
The implemented ARM Cortex-M0+ is revision r0p1. For more information, refer to

.  
7.1.1  
Cortex M0+ Configuration  
Table 7-1.ꢀCortex M0+ Configuration in SAM R34/R35  
Features  
Cortex M0+ options  
External interrupts 0-32  
Little-endian or big-endian  
Present or absent  
0, 1, 2  
SAM R34/R35 configuration  
Interrupts  
29  
Data endianness  
SysTick timer  
Little-endian  
Present  
2
Number of watchpoint  
comparators  
Number of breakpoint  
comparators  
0, 1, 2, 3, 4  
4
Halting debug support  
Multiplier  
Present or absent  
Fast or small  
Present  
Fast (single cycle)  
Present  
Single-cycle I/O port  
Present or absent  
Supported or not supported  
Present or absent  
Present or absent  
Wake-up interrupt controller  
Vector
T
a
ble Offset Register  
Unprivileged/Privileged support  
Not supported  
Present  
Absent – All software run in  
privileged mode only  
Memory Protection Unit  
Reset all registers  
Not present or 8-region  
Present or absent  
Not present  
Absent  
Instruction fetch width  
16-bit only or mostly 32-bit  
32-bit  
The ARM Cortex-M0+ core has two bus interfaces:  
• Single
 
32-bit AMBA-3 AHB-Lite system interface that provides connections to peripherals and all  
system memory including Flash memory and RAM  
• Single
 
32-bit I/O port bus interfacing to the PORT with 1-cycle loads and stores  
7.1.1.1 Cortex
 
M0+ Peripherals  
• System
 
Control Space (SCS)  
– The
 
processor provides debug through registers in the SCS. Refer to the Cortex-M0+
T
e
chnical  
Reference Manual for details (

)  
• Nested
 
Vectored Interrupt Controller (NVIC)  
DS70005356C-page 21  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
– External
 
interrupt signals connect to the NVIC, and the NVIC prioritizes the interrupts. Software  
can set the priority of each interrupt. The NVIC and the Cortex-M0+ processor core are closely  
coupled, providing low latency interrupt processing and efficient processing of late arriving  
interrupts. Refer to the Cortex-M0+
T
e
chnical Reference Manual for details (

Note:ꢀ
When the CPU frequency is much higher than the APB frequency it is recommended to  
insert a memory read barrier after each CPU write to registers mapped on the APB. Failing to do  
so in such conditions may lead to unexpected behavior such as re-entering a peripheral interrupt  
handler just after leaving it.  
• System
 
Timer (SysTick)  
– The
 
System Timer is a 24-bit timer clocked by CLK_CPU that extends the functionality of both  
the processor and the NVIC. Refer to the Cortex-M0+
T
e
chnical Reference Manual for details  
• System
 
Control Block (SCB)  
– The
 
System Control Block provides system implementation information, and system control. This  
includes configuration, control, and reporting of the system exceptions. Refer to the Cortex-M0+  
Devices Generic User Guide for details (

)  
• Micro
 
Trace Buffer (MTB)  
– The
 
CoreSight MTB-M0+ (MTB) provides a simple execution trace capability to the Cortex-M0+  
processor. Refer to section
MTB-Micro Trace Buffer
and the CoreSight MTB-M0+
T
e
chnical  
Reference Manual for details (

).  
Related Links  
7.2 Nested
 
Vector Interrupt Controller  
7.1.1.2 Cortex
 
M0+ Address Map  
Table 7-2.ꢀCortex-M0+ Address Map  
Address  
Peripheral  
0xE000E000  
System Control Space (SCS)  
System Timer (SysTick)  
0xE000E010  
0xE000E100  
Nested Vectored Interrupt Controller (NVIC)  
System Control Block (SCB)  
Micro Trace Buffer (MTB)  
0xE000ED00  
0x41006000  
7.1.1.3 I/O
 
Interface  
™
®
The device allows direct access to PORT registers. Accesses to the AMBA
 
AHB-Lite and
 
the single  
cycle I/O interface can be made concurrently, so the Cortex M0+ processor can fetch the next instructions  
while accessing the I/Os. This enables single cycle I/O access to be sustained for as long as necessary.  
7.2  
Nested Vector Interrupt Controller  
7.2.1  
Overview  
The Nested Vectored Interrupt Controller (NVIC) in the SAM R34/R35 supports 32 interrupt lines with four  
different priority levels. For more details, refer to the Cortex-M0+
T
e
chnical Reference Manual (

DS70005356C-page 22  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
7.2.2  
Interrupt Line Mapping  
Each of the 23 interrupt lines is connected to one peripheral instance, as shown in the table below. Each  
peripheral can have one or more interrupt flags, located in the peripheral’s Interrupt Flag Status and Clear  
(INTFLAG) register.  
An interrupt flag is set when the interrupt condition occurs. Each interrupt in the peripheral can be  
individually enabled by writing a 1 to the corresponding bit in the peripheral’s Interrupt Enable Set  
(INTENSET) register, and disabled by writing 1 to the corresponding bit in the peripheral’s Interrupt  
Enable Clear (INTENCLR) register.  
An interrupt request is generated from the peripheral when the interrupt flag is set and the corresponding  
interrupt is enabled.  
The interrupt requests for one peripheral are ORed together on system level, generating one interrupt  
request for each peripheral. An interrupt request will set the corresponding interrupt pending bit in the  
NVIC interrupt pending registers (SETPEND/CLRPEND bits in ISPR/ICPR).  
For the NVIC to activate the interrupt, it must be enabled in the NVIC interrupt enable register (SETENA/  
CLRENA bits in ISER/ICER). The NVIC interrupt priority registers IPR0-IPR7 provide a priority field for  
each interrupt.  
Table 7-3.ꢀInterrupt Line Mapping  
Peripheral Source  
NVIC Line  
EIC NMI – External Interrupt Controller  
PM – Power Manager  
NMI  
0
MCLK – Main Clock  
OSCCTRL – Oscillators Controller  
OSC32KCTRL – 32KHz Oscillators Controller  
SUPC – Supply Controller  
PAC – Protecion Access Controller  
WDT – Watchdog Timer  
1
RTC – Real Time Counter  
2
EIC – External Interrupt Controller  
3
NVMCTRL – Non-Volatile Memory Controller  
DMAC – Direct Memory Access Controller  
USB – Universal Serial Bus  
4
5
6
EVSYS – Event System  
7
SERCOM0 – Serial Communication Interface 0  
SERCOM1 – Serial Communication Interface 1  
SERCOM2 – Serial Communication Interface 2  
SERCOM3 – Serial Communication Interface 3  
SERCOM4 – Serial Communication Interface 4  
8
9
10  
11  
12  
DS70005356C-page 23  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
………..continued  
Peripheral Source  
NVIC Line  
SERCOM5 – Serial Communication Interface 5  
TCC0 – Timer Counter for Control 0  
TCC1 – Timer Counter for Control 1  
TCC2 – Timer Counter for Control 2  
TC0 – Timer Counter 0  
13  
14  
15  
16  
17  
18  
19  
20  
21  
TC1 – Timer Counter 1  
TC4 – Timer Counter 4  
ADC – Analog-to-Digital Converter  
AC – Analog Comparator  
7.3  
Micro Trace Buffer  
7.3.1  
Features  
• Program
 
flow tracing for the Cortex-M0+ processor  
• MTB
 
SRAM can be used for both trace and general purpose storage by the processor  
• The
 
position and size of the trace buffer in SRAM is configurable by software  
• CoreSight
 
compliant  
7.3.2  
Overview  
When enabled, the MTB records the changes in program flow that are reported by the Cortex-M0+  
processor over the execution trace interface. This interface is shared between the Cortex-M0+ processor  
and the CoreSight MTB-M0+. The information is stored by the MTB in the SRAM as trace packets. An off-  
chip debugger can extract the trace information using the Debug Access Port to read the trace  
information from the SRAM. The debugger can then reconstruct the program flow from this information.  
The MTB stores trace information into the SRAM and gives the processor access to the SRAM  
simultaneously. The MTB ensures that trace write accesses have priority over processor accesses.  
An execution trace packet consists of a pair of 32-bit words that the MTB generates when it detects a  
non-sequential change of the program pounter (PC) value. A non-sequential PC change can occur during  
branch instructions or during exception entry. See the CoreSight MTB-M0+
T
e
chnical Reference Manual  
for more details on the MTB execution trace packet format.  
Tracing is enabled when the MASTER.EN bit in the Master Trace Control Register is 1. There are various  
ways to set the bit to 1 to start tracing, or to 0 to stop tracing. See the CoreSight Cortex-M0+
T
e
chnical  
Reference Manual for more details on the Trace start and stop and for a detailed description of the MTB’s  
MASTER register. The MTB can be programmed to stop tracing automatically when the memory fills to a  
specified watermark level or to start or stop tracing by writing directly to the MASTER.EN bit. If the  
watermark mechanism is not being used and the trace buffer overflows, then the buffer wraps around  
overwriting previous trace packets.  
The base address of the MTB registers is 0x41006000; this address is also written in the CoreSight ROM  
T
a
ble. The offset of each register from the base address is fixed and as defined by the CoreSight MTB-  
DS70005356C-page 24  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
M0+
T
e
chnical Reference Manual. The MTB has four programmable registers to control the behavior of  
the trace features:  
• POSITION:
 
Contains the trace write pointer and the wrap bit  
• MASTER:
 
Contains the main trace enable bit and other trace control fields  
• FLOW:
 
Contains the WATERMARK address and the AUTOSTOP and AUTOHALT control bits  
• BASE:
 
Indicates where the SRAM is located in the processor memory map. This register is provided  
to enable auto discovery of the MTB SRAM location by a debug agent  
See the CoreSight MTB-M0+
T
e
chnical Reference Manual for a detailed description of these registers.  
7.4  
High-Speed Bus System  
7.4.1  
Features  
High-Speed Bus Matrix has the following features:  
• Symmetric
 
crossbar bus switch implementation  
• Allows
 
concurrent accesses from different masters to different slaves  
• 32-bit
 
data bus  
• Operation
 
at a one-to-one clock frequency with the bus masters  
H2LBRIDGE has the following features:  
• LP
 
clock division support  
• Write:
 
Posted-write FIFO of 3 words, no bus stall until it is full  
• Write:
 
1 cycle bus stall when full when LP clock is not divided  
• 2
 
stall cycles on read when LP clock is not divided  
• Ultra-Low
 
Latency mode:  
– Suitable
 
when the HS clock frequency is not above half the maximum device clock frequency  
– Removes
 
all intrinsic bridge stall cycles (except those needed for LP clock ratio adaptation)  
– Enabled
 
by writing a ‘1’ in 0x41008120 using a 32-bit write access  
L2HBRIDGE has the following features:  
• LP
 
clock division support  
• Write:
 
Posted-write FIFO of 1 word, no bus stall until it is full  
• Write:
 
1 cycle bus stall when full when LP clock is not divided  
• 2
 
stall cycles on read when LP clock is not divided  
• Ultra-Low
 
Latency mode:  
– Suitable
 
when the HS clock frequency is not above half the maximum device clock frequency  
– Removes
 
all intrinsic bridge stall cycles (except those needed for LP clock ratio adaptation)  
– Enabled
 
by writing a ‘1’ in 0x41008120 using a 32-bit write access  
Figure 7-1.ꢀHigh-Speed Bus System Components  
M
M
S
M
M
M
S
H2LBRIDGEM  
L2HBRIDGES  
H2LBRIDGES  
L2HBRIDGES  
S
H2LBRIDGE  
L2HBRIDGE  
HMATRIXLP  
HMATRIXHS  
M
S
S
S
S S  
S
S S S S S S  
DS70005356C-page 25  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
7.4.2  
Configuration  
Figure 7-2.ꢀMaster-Slave Relations High-Speed Bus Matrix  
High-Speed Bus SLAVES  
0
1
2
3
4
CM0+  
DSU  
0
1
2
L2HBRIDGEM  
Figure 7-3.ꢀMaster-Slave Relations Low-Power Bus Matrix  
Low-Power Bus SLAVES  
0
1
2
3
5
7
8
9
H2LBRIDGEM 0  
DMAC  
2
Table 7-4.ꢀHigh-Speed Bus Matrix Masters  
High-Speed Bus Matrix Masters  
CM0+ – Cortex M0+ Processor  
Master ID  
0
1
DSU – Device Service Unit  
DS70005356C-page 26  
Datasheet  
©
2019 Microchip
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e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
………..continued  
High-Speed Bus Matrix Masters  
Master ID  
L2HBRIDGEM – Low-Power to High-Speed bus  
matrix AHB to AHB bridge  
2
Table 7-5.ꢀHigh-Speed Bus Matrix Slaves  
High-Speed Bus Matrix Slaves  
Internal Flash Memory  
Slave ID  
0
1
2
3
4
HS SRAM Port 0 – CM0+ Access  
HS SRAM Port 1 – DSU Access  
AHB-APB Bridge B  
H2LBRIDGES – High-Speed to Low-Power bus  
matrix AHB to AHB bridge  
Table 7-6.ꢀLow-Power Bus Matrix Masters  
Low-Power Bus Matrix Masters  
Master ID  
H2LBRIDGEM – High-Speed to Low-Power bus  
matrix AHB to AHB bridge  
0
DMAC – Direct Memory Access Controller – Data  
Access  
2
Table 7-7.ꢀLow-Power Bus Matrix Slaves  
Low-Power Bus Matrix Slaves  
AHB-APB Bridge A  
Slave ID  
0
1
2
3
5
7
8
AHB-APB Bridge C  
AHB-APB Bridge D  
AHB-APB Bridge E  
LP SRAM Port 2- H2LBRIDGEM access  
LP SRAM Port 1- DMAC access  
L2HBRIDGES – Low-Power to High-Speed bus  
matrix AHB to AHB bridge  
HS SRAM Port 2- HMATRIXLP access  
9
7.4.3  
SRAM Quality of Service  
To
e
nsure that masters with latency requirements get sufficient priority when accessing RAM, priority  
levels can be assigned to the masters for different types of access.  
The Quality of Service (QoS) level is independently selected for each master accessing the RAM. For any  
access to the RAM, the RAM also receives the QoS level. The QoS levels and their corresponding bit  
values for the QoS level configuration are shown in the following table.  
DS70005356C-page 27  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
Table 7-8.ꢀQuality of Service  
Value  
Name  
Description  
0x0  
DISABLE  
Background (no sensitive  
operation)  
0x1  
0x2  
0x3  
LOW  
Sensitive Bandwidth  
Sensitive Latency  
Critical Latency  
MEDIUM  
HIGH  
If a master is configured with QoS level DISABLE (0x0) or LOW (0x1) there will be a minimum latency of  
one cycle for the RAM access.  
The priority order for concurrent accesses are decided by two factors. First, the QoS level for the master  
and second, a static priority given by the port ID. The lowest port ID has the highest static priority. See the  
tables below for details.  
The MTB has a fixed QoS level HIGH (0x3).  
The CPU QoS level can be written/read, using 32-bit access only, at address 0x41008114 bits [1:0]. Its  
reset value is 0x3.  
Refer to different master QOSCTRL registers for configuring QoS for the other masters (USB, DMAC).  
Table 7-9.ꢀHS SRAM Port Connections QoS  
HS SRAM Port Connection
 
Port ID
 
Connection Type
 
QoS  
default QoS  
MTB – Micro Trace Buffer  
USB – Universal Serial Bus  
4
3
2
Direct  
STATIC-3  
0x3  
0x3  
0x2  
Direct  
IP-QOSCTRL  
HMATRIXLP – Low-Power  
Bus Matrix  
Bus Matrix  
0x44000934

(1)

, bits[1:0]  
DSU – Device Service Unit  
1
0
Bus Matrix  
Bus Matrix  
0x4100201C

(1)  

0x2  
0x3  
CM0+ – Cortex M0+  
Processor  
0x41008114

(1)

, bits[1:0]  
Note:ꢀ  
1. Using
 
32-bit access only.  
Table 7-10.ꢀLP SRAM Port Connections QoS  
LP SRAM Port Connection
 
Port ID
 
Connection Type
 
QoS  
default QoS  
DMAC – Direct Memory  
Access Controller – Write-  
Back Access  
5, 6  
Direct  
IP-QOSCTRL.WRBQOS  
0x2  
DMAC – Direct Memory  
Access Controller – Fetch  
Access  
3, 4  
Direct  
IP-QOSCTRL.FQOS  
0x2  
DS70005356C-page 28  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Processor and Architecture  
………..continued  
LP SRAM Port Connection
 
Port ID
 
Connection Type
 
QoS  
default QoS  
H2LBRIDGEM – HS to LP  
bus matrix AHB to AHB  
bridge  
2
Bus Matrix  
0x44000924

(1)

, bits[1:0]  
0x2  
DMAC – Direct Memory  
Access Controller – Data  
Access  
1
Bus Matrix  
IP-QOSCTRL.DQOS  
0x2  
Note:ꢀ  
1. Using
 
32-bit access only.  
DS70005356C-page 29  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Application Schematic Introduction  
8.  
Application Schematic Introduction  
The SAM R34/R35 application schematic has to provide the environment for both integrated circuits  
inside the package. The microcontroller as well as the radio have integrated LDOs to provide the required  
core voltages.
T
o
a
chieve the full radio performance, the application layout has to take the noise  
decoupling in-between the analog radio part and the digital processor and signal processing power  
domains into account.  
8.1  
SAM R34/R35 Basic Application Schematic  
The following application schematic shows the minimum circuit elements required for the SAM R34/R35  
system. In this schematic, both the high-power PA_BOOST and high-efficiency RFO_HF transmitter  
configurations are populated. Some applications may require only one transmitter configuration.  
For unused pins, the default state of the pins will give the lowest current leakage. Thus, there is no need  
to perform any configuration of the unused pins in order to lower the power consumption.  
DS70005356C-page 30  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

Figure 8-1.ꢀSAM R34/R35 Basic Application Schematic
rotatethispage90  
VDD  
U300  
VDD  
G4  
A8  
A7  
C2  
H8  
H3  
C1  
VDDIO1  
VDDIO2  
VDDIN  
VBAT_DIG  
VBAT_ANA  
VBAT_RF  
VDDANA  
32 MHz TCXO  
VDDANA  
DNP  
VDDANA  
A6  
A5  
H4  
H2  
D1  
L301  
LQH3NPN100MJ0  
C303  
100nF  
C304  
100nF  
C307  
100nF  
C308  
100nF  
VSW  
VR_DIG  
VR_ANA  
VR_PA  
XTA  
VDDCORE  
C330  
33pF  
C311  
100nF  
C312  
100nF  
C313  
100nF  
C314  
100nF  
C340  
4.7pF  
C315  
100nF  
GND  
GND  
GND  
GND  
C316  
100nF  
B3  
E2  
B5  
B7  
D4  
D6  
A2  
B2  
E1  
F2  
G2  
G3  
G5  
G6  
G7  
H5  
C321  
DNF  
C300  
DNF  
GNDANA  
GNDANA  
GND  
GND  
GND  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
GND_RF  
VDD  
DNP  
GND  
DNP  
GND  
XC1  
TYETBCSANF-32.000000  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
VR_PA  
B6  
RESET  
RESET  
GND  
A3  
A4  
D3  
C4  
E3  
F3  
F4  
F5  
F6  
F8  
G8  
F7  
E6  
E7  
E8  
D8  
D7  
B8  
C8  
E4  
C6  
C5  
D5  
B4  
C3  
E5  
C7  
PA00_XIN32  
PA01_XOUT32  
PA00  
PA01  
PA04  
PA05  
PA06  
PA07  
PA08  
PA09  
PA13  
PA14  
PA15  
PA16  
PA17  
PA18  
PA19  
PA22  
PA23  
PA24  
PA25  
PA27  
PA28  
PA30  
PA31  
PB02  
PB03  
PB22  
PB23  
PA04_S0_UART_TX  
PA05_S0_UART_RX  
50Ohm  
i
VDD  
L300  
BLM15AG121SN1D  
B1  
A1  
F1  
G1  
H1  
D2  
RFO_HF  
RFI_HF  
VDDANA  
RFSW_PWR  
RFO_HF  
RFI_HF  
PA_BOOST  
RFO_LF  
RFI_LF  
RXTX  
GND  
50Ohm  
i
C306  
10uF  
RFSW_PWR  
BAND_SEL  
C320  
100nF  
50Ohm  
i
PA_BOOST  
GND  
GND  
TXRX  
XTA  
32 kHz Crystal  
PA30_SWDCLK  
PA31_SWDIO  
Y301  
H6  
H7  
PA01_XOUT32  
PA00_XIN32  
XTA  
XTB  
ABS05-32.768KHZ-9-T  
C309  
C310  
10pF  
10pF  
SAMR34J18B  
ANTENNA  
SMA Antenna connector  
GND  
GND  
GND  
C904  
50Ohm  
DNP  
i
1
J901  
DNF  
50Ohm  
i
50Ohm  
i
50Ohm  
50Ohm  
i
50Ohm  
i
SM
A
E
dg
e
M
ount  
C900  
i
L900  
2.2nH  
L902  
L901  
10nH  
PA_BOOST  
Cortex Debug Connector  
10nH  
GND  
1
8
p
F  
C901  
3.9pF  
C917  
3.3pF  
C902  
5.6pF  
C903  
3.3pF  
L903  
33nH  
GND  
GND  
VDD  
J303  
1
3
5
7
9
2
4
6
8
GND  
VREF  
PA31_SWDIO  
PA30_SWDCLK  
GND  
GND  
GND  
U900  
SKY13373-460LF  
VR_PA  
50Ohm  
i
50Ohm  
i
50Ohm  
i
10  
C905  
RESET  
L904  
1
9
RFI_HF  
J1  
J2  
C906  
DNF  
C907  
4.7nF  
DNP  
HEADER 2×5  
1310-1205SNS073R1  
10nH  
GND  
2
8
L905  
33nH  
47pF  
GND  
GND  
GND  
C908  
2.7pF  
3
7
C909  
DNP  
DNF  
C915  
DNP  
DNF  
J3  
GND  
GND  
GND  
GND  
50Ohm  
i
50Ohm  
i
50Ohm  
C910  
50Ohm  
50Ohm  
50Ohm  
i
GND  
i
i
i
L906  
L907  
L909  
10nH  
RFO_HF  
V1 V2  
RF Switch State  
11nH  
10nH  
RFSW_PWR  
22pF  
0
1
0
1
0
0
1
1
Shutdown  
C911  
3.9pF  
C912  
8.2pF  
C913  
5.6pF  
C916  
3.3pF  
RFC to J2 (RFI_HF)  
RFC to J1 (PA_BOOST)  
RFC to J3 (RFO_HF)  
C914  
1 nF  
GND  
GND  
GND  
GND  
GND  
BAND_SEL  
TXRX  

SAM R34/R35  
Application Schematic Introduction  
8.2  
SAM R34/R35 Bill of Materials  
Table 8-1.ꢀBill of Materials for SAM R34/R35  
Sl. No.
 
Designator  
Quantity Value  
Manufacturer  
MPN  
C0201C104K9PACTU  
Description  
1
C303, C304, C307,
 
11  
100nF  
KEMET  
CAP CER 0.1UF 6.3V 10% X5R 0201  
C308, C311, C312,  
C313, C314, C315,  
C316, C320  
2
3
4
C306  
1
2
1
10uF  
10pF  
33pF  
Murata  
GRM155R60J106ME15  
C0603C0G1E100C  
250R05L330GV4T  
Ceramic capacitor, SMD 0402, X5R, 6.3V, 20%  
CAP CER 10PF 25V C0G 0201  
C309, C310  
C330  
TDK Corporation  
Johanson
T
e
chnology  
Inc.  
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,  
+/-2%  
5
C340  
1
4.7pF  
Johanson
T
e
chnology  
Inc.  
250R05L4R7BV4T  
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,  
+/-0.1pF  
6
7
8
9
C900  
1
2
2
3
18pF  
3.9pF  
5.6pF  
3.3pF  
Murata  
Murata  
Murata  
GRM0335C1H180GA01D CAP
 
CER 18PF 50V C0G/NP0 0201 +/- 2%  
GRM0335C1H3R9BA01D CAP
 
CER 3.9PF 50V C0G/NP0 0201, +/-0.1pF  
GRM0335C1E5R6BA01D CAP
 
CER 5.6PF 25V 0201  
C901, C911  
C902, C913  
C903, C916, C917  
Johanson
T
e
chnology  
Inc.  
250R05L3R3BV4T  
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,  
+/-0.1pF  
10  
11  
12  
13  
14  
C905  
C907  
C908  
C910  
C912  
1
1
1
1
1
47pF  
4.7nF  
2.7pF  
22pF  
8.2pF  
1nF  
Johanson
T
e
chnology  
Inc.  
250R05L470GV4T  
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,  
+/-2%  
Murata  
GRM033R71A472KA01D Ceramic
 
capacitor, SMD 0201, X7R, 10V,  
+/-10%  
Murata  
GJM0335C1E2R7BB01E Ceramic
 
capacitor, SMD 0201, C0G/NP0, 25V,  
+/-0.1pF  
Johanson
T
e
chnology  
Inc.  
250R05L220GV4T  
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,  
+/-2%  
Johanson
T
e
chnology  
Inc.  
250R05L8R2CV4T  
CAP CER 8.2PF 25V NP0 0201 ±0.25pF  
15  
16  
C914  
J303  
1
1
Murata  
GRM033R71C102KA01D Ceramic
 
capacitor, SMD 0201, X7R, 16V, 0.1  
1310-1205SNS073R1 WCON
 
Hardware  
Electronics Co., Ltd  
1310-1205SNS073R1  
2×5 pin header, 1.27mm pitch, THM  
17  
18  
19  
20  
21  
22  
23  
J901  
L300  
L900  
1
1
1
4
2
1
1
SMA Edge Mount  
Cinch Connectivity  
Solutions Johnson  
142-0771-831  
Cinch Connectivity Solutions Johnson 50 Ohms,  
SMA Edge Mount Jack Receptacle  
BLM15AG121SN1D  
Murata  
Murata  
Murata  
BLM15AG121SN1D  
LQW15AN2N2C10D  
LQP03TN10NH02D  
L-05B33NJV6T  
Chip Bead, 120ohm@100Mhz, 0.55A, 0402,  
Rdc 0.19ohm  
2.2nH  
10nH  
33nH  
10nH  
11nH  
FIXED IND 2.2NH 1A 27 MOHM SMD, +-0.2nH,  
0201  
L901, L902, L907,  
L909  
FIXED IND 10NH 250MA 700 MOHM, +-3%,  
0201  
L903, L905  
Johanson
T
e
chnology  
Inc.  
RF Inductor, 33nH, +/-5%, Irms=0.2A,  
Q=5@100Mhz, DCR=2.3(Max), SMD, 0201  
L904  
TDK Corporation  
MLK0603L10NJT000  
LQP03HQ11NH02  
RF Inductor, 10nH, +/-5%, Irms=0.2A,  
Q=6@300Mhz, DCR=0.8(Max), SMD, 0201  
L906  
Murata  
FIXED IND 11NH 300MA 500 MOHM 0201  
+/-3%  
24  
25  
R300  
U300  
1
1
100k  
ASJ  
CR10-1003-FK  
Thick film resistor, SMD 0402, 1/16W, 1%  
SAMR34 BGA-64  
SAMR34J18B  
Microchip
T
e
chnology  
Inc.  
ATSAMR34J18BT-I/7JX  
DS70005356C-page 32  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Application Schematic Introduction  
………..continued  
Sl. No.
 
Designator  
Quantity Value  
Manufacturer  
Skyworks Solutions  
T
a
itien  
MPN  
SKY13373-460LF  
Description  
26  
27  
U900  
XC1  
1
1
SKY13373-460LF  
0.1-6.0GHZ SPT3 SWITCH  
32MHz TCXO  
TYETBCSANF-32.000000 32MHz
 
TCXO, 2.8 ~ 3.3
V
,
C
lipped sine wave  
10kOhm/10p
F
, 2 x
1
.6 mm SMD  
28  
Y301  
1
ABS05-32.768KHZ-9-T  
—
—
CRYSTAL 32.768KHz 9pF SMD ABS05  
DS70005356C-page 33  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Transceiver Circuit Description  
9.  
Transceiver Circuit Description  
Note:ꢀ
The SAM R34/R35 incorporates a LoRa transceiver.  
The integrated Sub-GHz transceiver supports LoRa technology spread spectrum modulation, combining  
ultra-long range communications and high interference immunity with extremely low current consumption.  
Receive sensitivities of over -148 dBm can be achieved in narrowband modes, and -136 dBm in  
LoRaWAN protocol compliant modes, using a low cost crystal and bill of materials.  
The transmit section offers two integrated power amplifiers. The highly efficient RFO port delivers up to  
+13 dBm for European regions and battery conservation. The high powered PA_BOOST port delivers a  
regulated output of +17 dBm with low EMI across the entire working voltage range or, up to +20 dBm of  
raw RF power with high-voltage supplies. This combination of high power and high RX sensitivity yields  
industry leading link budget, making it ideal for any application requiring long range low-data-rate  
communications. LoRa technology also provides significant advantages in both blocking and selectivity  
over conventional modulation techniques, solving the traditional design compromise between range,  
interference robustness and energy consumption. For maximum flexibility, the user may decide on the  
spread spectrum modulation bandwidth (BW), spreading factor (SF), and forward error correction rate  
(CR). Another benefit of the spread spectrum modulation is that each spreading factor is orthogonal, thus  
multiple transmitted signals can occupy the same channel without interfering.  
The SAM R34/R35 also supports high performance (G)FSK, (G)MSK, and OOK modes for systems  
including WMBus and IEEE802.15.4g.  
This transceiver offers bandwidth options ranging from 7.8 kHz to 500 kHz with spreading factors ranging  
from 6 to 12, and covering all available frequency bands from 137 to 1020 MHz.  
9.1  
Transceiver Pin Description  
Table 9-1.ꢀDescription of Transceiver Signals Available Outside the Package  
Name  
Type  
I
Description  
RFI_LF  
RFO_LF  
VR_ANA  
VBAT_ANA  
VR_DIG  
VBAT_DIG  
XTA  
RF Input for Bands 2 and 3  
RF Output for Bands 2 and 3  
Regulated Supply Voltage for Analog Circuitry  
Supply Voltage for Analog Circuitry  
Regulated Supply Voltage for Digital Blocks  
Supply Voltage for Digital Blocks  
XTAL Connection or TCXO Input  
XTAL Connection  
O
Supply  
Supply  
Supply  
Supply  
I/O  
XTB  
I/O  
RXTX  
O
RX/TX Switch Control: High in TX  
RF Input for Band 1  
RFI_HF  
RFO_HF  
VBAT_RF  
I
O
RF Output for Band 1  
Supply  
Supply Voltage for RF Blocks  
DS70005356C-page 34  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Transceiver Circuit Description  
………..continued  
Name  
Type  
Supply  
O
Description  
VR_PA  
Restricted Supply for the PA  
PA_BOOST  
Optional High Power PA Output, All Frequency Bands  
9.2  
Transceiver Validation  
The SAM R34 transceiver has been extensively tested using LoRa modulation and FSK for European  
and North American regions.  
Validation of the SAM R34 device was performed at frequencies typically used in LoRa applications. The  
test boards exhibited regulatory compliance for European and North American regions. ETSI 868MHz  
ISM band was tested using the RFO_HF port. FCC 902-928MHz ISM band was tested using both the  
RFO_HF and PA_BOOST ports. These configurations use the transceiver’s synthesizer in band 1.  
At the time of publication of this data sheet, the RFO_LF port or SAM R34 is known to be functional but  
has not been validated. RFO_LF transmits on 137-175MHz and 410-525MHz bands (synthesizer band 2  
and band 3).  
DS70005356C-page 35  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Microcontroller Interface  
10.  
Microcontroller Interface  
This section describes the transceiver to microcontroller interface. The interface is comprised of a slave  
SPI and additional control signals. This interface is connected to a SAM L21 master interface as shown  
below. The SERCOM4 and GPIO signals dedicated to the CPU-TRX interface are not externally exposed  
and may not be used for any other purposes.  
Do not use CPU OFF mode. The internal SPI connections do not have pull-up resistors and the  
CAUTION  
CPU OFF mode puts the SPI bus in a high-impedance state. The resulting metastable signals  
may cause unpredictable transceiver behavior and increase the current consumption.  
Figure 10-1.ꢀMicrocontroller to Transceiver Interface  
Transceiver  
SPI SLAVE  
SAML21  
SERCOM4  
PB31  
PB30  
PC19  
PC18  
/SEL  
MOSI  
MISO  
SCK  
PAD2  
PAD0  
PAD3  
EXTERNAL  
INTERRUPT  
CONTROLLER  
PB17  
DIO3  
EXTINT(1)  
EXTINT (10)  
EXTINT (0)  
EXTINT (0)  
EXTINT (11)  
EXTINT (12)  
PA10  
PB00  
DIO4  
DIO5  
PB16  
PA11  
PA12  
DIO0  
CONTROL  
LOGIC  
DIO1/DCLK  
DIO2/DATA  
SERCOM2  
PAD0  
PAD3  
PB15  
nRST  
PORT  
The SPI is used for register, Frame Buffer, and SRAM access. The additional control signals are  
connected to the GPIO/IRQ interface of the microcontroller. The table below introduces the radio  
transceiver I/O signals and their functionalities.  
Table 10-1.ꢀMicrocontroller Interface Signal Description  
TRX Signal  
/SEL  
CPU Signal Name  
PB31  
Description  
SPI select signal, active-low  
SPI data (master output slave input) signal  
SPI data (master input slave output) signal  
SPI clock signal  
MOSI  
PB30  
MISO  
PC19  
SCLK  
PC18  
nRST  
PB15  
Transceiver Reset signal, Active-low  
DS70005356C-page 36  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Microcontroller Interface  
………..continued  
TRX Signal  
CPU Signal Name  
Description  
DIO0  
DIO1  
DIO2  
DIO3  
DIO4  
DIO5  
PB16  
PA11  
PA12  
PB17  
PA10  
PB00  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
Digital I/O, software configured  
DS70005356C-page 37  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
11.  
Electrical Characteristics  
Note:ꢀ
All the specifications are typical (TYP), unless otherwise stated.  
11.1  
Absolute Maximum Ratings  
Stresses beyond those listed in following table may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or other conditions beyond those  
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Table 11-1.ꢀAbsolute Maximum Ratings  
Symbol Description  
Min.  
Max.  
Units  
V

DD  

V

PIN  

Power supply voltage  
0
3.8  
V
Pin voltage with respect to GND and V

DD  

V

DD MAX

=3.6V  
GND-0.6V VDD+0.6V V  
P

RF  

Input RF level  
–
+10  
150  
260  
dBm  
°C  
T

storage

Storage temperature  
-50  
–
T

LEAD  

T=10s  
°C  
(soldering profile compliant with IPC/JEDEC J STD 020B)  
This device is sensitive to electrostatic discharges (ESD). Improper handling may lead to  
permanent performance degradation or malfunctioning. Handle the device following best  
practice ESD protection rules: Be aware that the human body can accumulate charges large  
enough to impair functionality or destroy the device.  
CAUTION  
11.2  
General Operating Conditions  
The device must operate within the ratings listed in the following table in order for all other electrical  
characteristics and typical characteristics of the device to be valid.  
For unused pins, the default state of the pins gives the lowest current leakage. Thus, specific  
configuration is not required for the unused pins in order to lower the power consumption.  
Table 11-2.ꢀGeneral Operating Conditions  
Symbol  
V

DDIN  

V

DDIO  

V

DDANA  

T

A  

Description  
Min.  
1.8  
1.8  
1.8  
-40  
Typ.  
3.3  
3.3  
3.3  
25  
Max.  
3.63  
3.63  
3.63  
85  
Units  
V
Power supply voltage  
IO Supply Voltage  
Analog supply voltage  
T
e
mperature range  
V
V
°C  
DS70005356C-page 38  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
………..continued  
Symbol  
Description  
Min.  
Typ.  
Max.  
Units  
T

J  

Junction temperature  
–
–
100  
°C  
In debugger Cold-Plugging mode, NVM erase operations are not protected by the BOD33 and  
BOD12. NVM erase operation at supply voltages below specified minimum can cause  
corruption of NVM areas that are mandatory for correct device behavior.  
CAUTION  
11.3  
Performance Characteristics  
The following data shows SAM R34/R35 performance as a combined system including both the SAML21  
and the transceiver under the following conditions:  
• Modulation
 
= LoRa  
• VCC
 
= 3.3 VDC  
•
T
e
mperature
 
= 25°C  
• F

RF_XTA

= 32.000000 MHz +/- 1 ppm (TCXO)  
• DFLL
 
= 48 MHz  
• BW
 
= 125 kHz  
• SF
 
= 12  
• EC
 
= 4/6  
• PER
 
= 1%  
• CRC
 
= ENABLED  
• Payload
 
= 64 Bytes  
• Preamble
 
= 12 symbols  
• Matched
 
Impedance  
Estimates for ACTIVE state of the SAML21 are derived using the CoreMark benchmarking algorithm, a  
48 MHz DFLL clock and 3.3 VDC supply. These are intended to show a conservative estimate of power  
consumption. Results are related to CPU activity, clock speed and temperature and may be improved  
with optimization.  
11.3.1  
Method of Derivation  
Combined specifications in this data sheet are derived from the published data sheets of the components.  
See Reference Documents [1] and [5]. For example, the
Line Current in TX Mode
entry for RFO_HF +13  
dBm is 32.5 mA. This is calculated using the IDDT_L current in
LoRa Receiver Specification
T
a
ble
10 of  
[5] and the
Active Current Consumption
T
a
ble
46-7 of [1] for the operational conditions shown below.  
Table 11-3.ꢀTRX TX Current Derivation  
Condition  
Bandwidth  
Carrier Frequency  
CRC  
Value  
125  
Unit  
kHz  
868  
MHz  
ENABLED  
DS70005356C-page 39  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
………..continued  
Condition  
Value  
Unit  
Error Correction Code  
Fxosc  
4/6  
32  
MHz  
Impedances  
MATCHED  
Packet Error rate  
Payload Length  
Preamble Length  
RF Output Power  
RF Port  
1
%
64  
Bytes  
Symbols  
dBm  
12  
+13  
RFO_HF  
12  
Spreading Factor  
Supply Voltage  
T
e
mperature  
3.3  
25  
VDC  
Celsius  
mA (TYP)  
IDDT_L  
28  
Table 11-4.ꢀTRX RX Current Derivation  
Condition  
Value  
125  
Unit  
kHz  
Bandwidth  
Carrier Frequency  
CRC  
868  
MHz  
ENABLED  
4/6  
Error Correction Code  
Fxosc  
32  
MHz  
Impedances  
MATCHED  
OFF  
1
LNA Boost  
Packet Error rate  
Payload Length  
Preamble Length  
RF Port  
%
64  
Bytes  
Symbols  
12  
RFI_HF  
12  
Spreading Factor  
Supply Voltage  
T
e
mperature  
3.3  
VDC  
25  
Celsius  
mA (TYP)  
IDDR_L  
10.3  
DS70005356C-page 40  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
Table 11-5.ꢀCPU Current Derivation  
CPU Contribution  
Conditions  
Clock  
Value  
DFLL 48  
COREMARK  
95  
Unit  
MHz  
Benchmark Algorithm  
Current/MHz  
Mode  
–
uA/MHz  
ACTIVE  
PL2  
–
PL  
–
Regulator  
LDO  
–
Supply Voltage (VDC)  
I_CPU  
3.3  
V
4.5  
mA (TYP)  
Using the contributions above the total combined current consumption is calculated as follows:  
• I_TOTAL

TX

= IDDT_L + I_CPU = 28 + 4.5 mA = 32.5 mA  
• I_TOTAL

RX

= IDDR_L + I_CPU = 10.3 + 4.5 mA = 14.8 mA  
11.3.2  
11.3.3  
Line Current in TX Mode  
Table 11-6.ꢀLine Current in Tx Mode  
Output Mode  
I_CPU  
4.5  
IDDT_L  
28  
I_TOTAL  
32.5  
Unit  
RFO_LF +13 dBm  
PA_BOOST +17 dBm  
mA (TYP)  
mA (TYP)  
4.5  
90  
94.5  
Line Current in Receive Mode  
Table 11-7.ꢀLine Current in Receive Mode  
Frequency MHz  
I_CPU  
4.5  
IDDR_L  
I_TOTAL  
Unit  
915  
868  
433  
10.3  
10.3  
11.5  
14.8  
14.8  
15.8  
mA (TYP)  
mA (TYP)  
mA (TYP)  
4.5  
4.5  
11.3.4  
Line Current in Low-Power Modes  
Table 11-8.ꢀLine Current in Low-Power Modes  
State  
CPU Mode  
ACTIVE  
I_CPU  
4.5  
TRX Mode  
SLEEP  
IDDSL  
0.0002  
0.2  
TOTAL  
4.5  
Units  
IDLE  
mA (TYP)  
STANDBY  
SLEEP  
STANDBY  
BACKUP  
1.2  
SLEEP  
1.4  
µA (TYP)  
nA (TYP)  
590  
SLEEP  
200  
790  
1. Do
 
Not Use CPU OFF mode. See
10. Microcontroller
 
Interface
for details.  
DS70005356C-page 41  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
11.3.5  
Transmitter Output Power  
Table 11-9.ꢀTransmitter Output Power in LoRa Mode  
Frequency (MHz)  
Output Port  
PA_BOOST  
RFO_HF  
Typical Output Power (dBm)  
915  
915  
868  
868  
433  
433  
17  
13  
17  
13  
17  
13  
PA_BOOST  
RFO_HF  
PA_BOOST  
RFO_LF  
11.3.6  
Transmitter Phase Noise  
Table 11-10.ꢀPhase Noise  
Offset  
10k  
Phase Noise (dBc/Hz)  
-103  
-103  
-115  
-122  
50k  
400k  
1M  
11.3.7  
Receiver Sensitivity  
Table 11-11.ꢀReceiver Sensitivity in LoRa Mode  
Frequency (MHz)  
BW (kHz)  
125  
SF  
11  
11  
12  
Sensitivity  
-133  
Unit  
dBm  
dBm  
dBm  
915  
868  
433  
125  
-133  
7.8  
-148  
Note:ꢀ
The above results are obtained with TCXO.  
11.3.8  
Blocking  
Table 11-12.ꢀBlocking  
Frequency (MHz)  
1 MHz  
71  
2 MHz  
76  
10 MHz  
84  
Unit  
915  
868  
433  
dB (TYP)  
dB (TYP)  
dB (TYP)  
71  
76  
84  
71  
72  
78  
11.3.9  
Transmitter High Power Operation  
To
o
perate in the +20 dBm High-Power mode high voltage must be supplied to VDDANA. For some  
regions, additional EMI filtering may be needed at high power.  
DS70005356C-page 42  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Electrical Characteristics  
Table 11-13.ꢀHigh-Power Operational Parameters  
Parameter  
Value  
RF Output Power  
Output Port  
+20 dBm MAX  
PA_BOOST F1  
2.4 VDC  
VDDANA (Min.)  
VDDANA (Max.)  
Typical Line Current  
Max. Duty Cycle  
VSWR  
3.6 VDC  
120 mA  
1% MAX  
3:1 MAX  
DS70005356C-page 43  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
SAM R34/R35 Package Information  
12.  
SAM R34/R35 Package Information  
12.1  
Package Drawings  
Figure 12-1.ꢀPackage Drawings of SAM R34/R35  
64-Lead Thin, Fine Pitch Ball Grid Array Package (7JX) – 6×6 mm Body [TFBGA]  
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at  
6.00  
A
NOTE 1  
B
6.00  
(DATUM B)  
(DATUM A)  
2X  
0.15 C  
2X  
TOP VIEW  
SIDE VIEW  
0.15 C  
0.20 C  
C
A2  
A
SEATING  
PLANE  
64X  
A1  
0.10 C  
(L)  
e
A1 BALL PAD CORNER  
(L)  
64X Øb  
0.15  
0.08  
C
C
A B  
e
BOTTOM VIEW  
Microchip Technology Drawing
 
C04-443A Sheet 1 of 2  
DS70005356C-page 44  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
SAM R34/R35 Package Information  
12.2  
SAM R34/R35 Land Pattern  
PCB layout pattern for SAM R34/R35 64-Pin BGA is shown below.  
Figure 12-2.ꢀSAM R34/R35 Land Pattern  
64-Lead Thin, Fine Pitch Ball Grid Array Package (7JX) – 6×6 mm Body [TFBGA]  
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at  
C1  
C2  
ØX  
E
SILK SCREEN  
G
RECOMMENDED LAND PATTERN  
Units  
MILLIMETERS  
Dimension Limits  
MIN  
NOM  
0.65 BSC  
4.55  
MAX  
0.40  
Contact Pitch  
Contact Pad Spacing  
Contact Pad Spacing  
E
C1  
C2  
4.55  
Contact Pad Diameter (X64)  
Space Between Pads  
X
G
0.20  
Notes:  
1. Dimensioning
 
and tolerancing per ASME Y14.5M  
BSC: Basic Dimension. Theoretically exact value shown without tolerances.  
Microchip Technology Drawing C04-2433A  
DS70005356C-page 45  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
13.  
Best Practices for Designers  
13.1  
Introduction  
This chapter outlines best practices for design and review of SAM R34/R35 designs. This chapter  
illustrates the recommended power supply connections, how to connect external analog references,  
programmer, debugger, oscillator, and crystal.  
13.1.1 Electromagnetic
 
Compliance  
Best practices for RF designs are beyond the scope of this document. There are several good application  
notes listed in the Reference Documentation section. Actual results may vary because of system factors  
like enclosures, PCBA design, incidental resonant structures, co-existence with other RF energy sources,  
regulatory and regional requirements. The designer must balance these factors and verify with laboratory  
measurements.
T
e
sting emissions early in the design cycle is strongly encouraged. Typical best practices  
include 4-layer PCB construction, generous ground planes and stitching vias for noise suppression and  
counterpoise, separation of RF and digital ground-domains, controlled-impedance transmission lines and  
passive components rated for radio frequency operation. Baseband techniques include placing  
decoupling capacitors very close to the power pins and an RC-filter on the RESET pin; in addition, a pull-  
up resistor on the SWCLK pin is critical for reliable operations.  
13.1.2 Operation
 
in Noisy Environment  
If the device is operating in an environment with much electromagnetic noise, it must be protected from  
the noise to ensure reliable operation. In particular, placing decoupling capacitors very close to the power  
pins, a RC-filter on the RESET pin, and a pull-up resistor on the SWCLK pin is critical for reliable  
operations. It is also relevant to eliminate or attenuate noise in order to avoid that it reaches supply pins,  
I/O pins and crystals.  
13.2  
Power Supply  
The SAM R34/R35 supports a single or dual power supply from 1.8 to 3.6 VDC. The same voltage must  
be applied to both VDDIN and VDDANA.  
The internal voltage regulator has three different modes:  
• Linear
 
mode: this mode does not require any external inductor. This is the default mode when CPU  
and peripherals are running  
• Low
 
Power (LP) mode: This is the default mode used when the chip is in Standby mode  
• Shutdown
 
mode: When the chip is in Backup mode, the internal regulator is turned off  
13.2.1 Power
 
Supply Connections  
The following figures show the recommended power supply connections for Switched/Linear mode,  
Linear mode only and with battery backup.  
DS70005356C-page 46  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
Figure 13-1.ꢀPower Supply Connection for Linear Mode Only  
Close to device  
(for every pin)  
IO Supply  
(1.62V — 3.63V)  
SAM R34  
VBAT (PB03)  
VDDIO  
VDDANA  
VDDIN  
Main Supply  
(1.8V — 3.6VDC)  
100nF  
100nF  
VSW  
100nF  
10µF  
10µF  
10µF  
VDDCORE  
1µF  
100nF  
GND  
GNDANA  
Figure 13-2.ꢀPower Supply Connection for Battery Backup  
Close to device  
(for every pin)  
IO Supply  
(1.62V — 3.63V)  
SAM R34  
VBAT (PB03)  
VDDIO  
Main Supply  
(1.62V — 3.63V)  
VDDANA  
VDDIN  
10µH  
100nF  
100nF  
100nF  
VSW  
10µF  
10µF  
10µF  
VDDCORE  
1µF  
100nF  
GND  
GNDANA  
DS70005356C-page 47  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
Table 13-1.ꢀPower Supply Connections, V

DDCORE

or V

SW

From Internal Regulator  
Signal Name
 
Recommended Pin Connection  
Description  
V

DDIO  

1.8 to 3.6 VDC  
Decoupling/filtering capacitors 100nF

(1)(2)

and 10µF

(1)  

Digital supply voltage  
Decoupling/filtering inductor 10µH

(1)(3)  

V

DDANA  

1.8 to 3.6 VDC  
Decoupling/filtering capacitors 100nF

(1)(2)

and 10µF

(1)  

Analog supply voltage  
Ferrite bead

(4)

prevents the V

DD

noise interfering with  
V

DDANA  

V

DDIN  

1.8 to 3.6 VDC  
Decoupling/filtering capacitors 100nF

(1)(2)

and 10µF

(1)  

Digital supply voltage  
Decoupling/filtering inductor 10µH

(1)(3)  

V

BAT  

1.8 to 3.5 VDC when connected  
External battery supply input  
V

DDCORE  

0.9V to 1.2V typical  
Decoupling/filtering capacitors 100nF

(1)(2)

and 1µF

(1)  

Linear Regulator mode: Core  
supply voltage output/ external  
decoupling pin  
Switched Regulator mode:  
Core supply voltage input, must  
be connected to V

SW

via  
inductor  
V

SW  

Switching Regulator mode: 10 µH inductor with  
saturation current above 150mA and DCR<1Ω  
Linear Regulator mode: Not connected  
On-Chip Switching mode  
regulator output  
GND  
Ground  
GND

ANA  

Ground for the analog power  
domain  
1. These values are only given as a typical example.  
2. Decoupling capacitors should be placed close to the device for each supply pin pair in the signal group,  
low ESR capacitors should be used for better decoupling.  
3. An inductor should be added between the external power and the V

DD

for power filtering.  
4. A ferrite bead has better filtering performance compared to standard inductor at high frequencies. A  
ferrite bead can be added between the main power supply (V

DD

) and V

DDANA

to prevent digital noise from  
entering the analog power domain. The bead should provide enough impedance (e.g. 50Ω at 20MHz and  
220Ω at 100MHz) to separate the digital and analog power domains. Make sure to select a ferrite bead  
designed for filtering applications with a low DC resistance to avoid a large voltage drop across the ferrite  
bead.  
DS70005356C-page 48  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
13.3  
External Reset Circuit  
The external Reset circuit is connected to the RESET pin when the external Reset function is used. The  
circuit is not necessary when the RESET pin is not driven LOW externally by the application circuitry.  
The reset switch can also be removed, if a manual reset is not desired. The RESET pin itself has an  
internal pull-up resistor, hence it is optional to add any external pull-up resistor.  
Figure 13-3.ꢀExternal Reset Circuit Schematic  
V

DD  

10kΩ  
RESET  
330Ω  
100nF  
GND  
A pull-up resistor makes sure that the reset does not go low and unintentionally causing a device reset.  
An additional resistor has been added in series with the switch to safely discharge the filtering capacitor,  
i.e. preventing a current surge when shorting the filtering capacitor which again can cause a noise spike  
that can have a negative effect on the system.  
Table 13-2.ꢀReset Circuit Connections  
Signal Name  
Recommended Pin Connection  
Description  
RESET  
Reset low level threshold voltage  
Reset pin  
V

DDIO

= 1.6V – 2.0V: Below 0.33 * V

DDIO  

V

DDIO

= 2.7V – 3.6V: Below 0.36 * V

DDIO  

Decoupling/filter capacitor 100nF

(1)  

Pull-up resistor 10kΩ

(1)(2)  

Resistor in series with the switch 330Ω

(1)  

1. These values are only given as a typical example.  
2. The SAM R34/R35 features an internal pull-up resistor on the RESET pin, hence an external pull up is  
optional.  
DS70005356C-page 49  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
13.4  
13.5  
Unused or Unconnected Pins  
For unused pins, the default state of the pins will give the lowest current leakage. Thus, there is no need  
to do any configuration of the unused pins in order to lower the power consumption.  
Clocks and Crystal Oscillators  
The SAM R34/R35 can be run from internal or external clock sources, or a mix of internal and external  
sources. An example of usage can be to use the internal 16MHz oscillator as source for the system clock  
and an external 32.768kHz watch crystal as clock source for the Real-Time counter (RTC).  
13.5.1 External
 
Clock Source  
Figure 13-4.ꢀExternal Clock Source Schematic  
External  
Clock  
XIN  
XOUT/GPIO  
NC/GPIO  
Table 13-3.ꢀExternal Clock Source Connections  
Signal Name
 
Recommended Pin Connection  
Description  
XIN  
XIN is used as input for an external clock signal  
Can be left unconnected or used as normal GPIO  
Input for inverting oscillator pin  
NC/GPIO  
XOUT/GPIO  
13.5.2 Crystal
 
Oscillator  
Figure 13-5.ꢀCrystal Oscillator Schematic  
XIN  
15pF  
15pF  
XOUT  
The crystal should be located as close to the device as possible. Long signal lines may cause too high of  
a load to operate the crystal, and cause crosstalk to other parts of the system.  
Table 13-4.ꢀCrystal Oscillator Checklist  
Signal Name  
XIN  
Recommended Pin Connection  
Load capacitor 15pF

(1)(2)  

Description  
External crystal between 0.4 to 32MHz  
XOUT  
Load capacitor 15pF

(1)(2)  

DS70005356C-page 50  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
1. These values are only given as a typical example.  
2. The capacitors should be placed close to the device for each supply pin pair in the signal group.  
13.5.3 External
 
Real Time Oscillator  
The low frequency crystal oscillator is optimized for use with a 32.768kHz watch crystal. When selecting  
crystals, load capacitance and the crystal’s Equivalent Series Resistance (ESR) must be taken into  
consideration. Both values are specified by the crystal vendor.  
SAM R34/R35 oscillator is optimized for very low power consumption, hence close attention should be  
made when selecting crystals.  
The typical parasitic load capacitance values are available in the Electrical Characteristics section. This  
capacitance and PCB capacitance can allow using a crystal inferior to 12.5pF load capacitance without  
external capacitors as shown in
Figure 13-6
.  
Figure 13-6.ꢀExternal Real Time Oscillator without Load Capacitor  
XIN32  
32.768kHz  
XOUT32  
To
i
mprove accuracy and Safety Factor, the crystal datasheet can recommend adding external capacitors  
as shown in
Figure 13-7
.  
To
f
ind suitable load capacitance for a 32.768kHz crystal, consult the crystal datasheet.  
Figure 13-7.ꢀExternal Real Time Oscillator with Load Capacitor  
XIN32  
12pF  
32.768kHz  
12pF  
XOUT32  
Table 13-5.ꢀExternal Real Time Oscillator Checklist  
Signal Name  
XIN32  
Recommended Pin Connection  
Load capacitor 22pF

(1)(2)  

Description  
Timer oscillator input  
Timer oscillator output  
XOUT32  
Load capacitor 22pF

(1)(2)  

1. These values are only given as typical examples.  
2. The capacitors should be placed close to the device for each supply pin pair in the signal group.  
Note:ꢀ
In order to minimize the cycle-to-cycle jitter of the external oscillator, keep the neighboring pins as  
steady as possible. For neighboring pin details, refer to the Oscillator Pinout section.  
DS70005356C-page 51  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
13.5.4 Calculating
 
the Correct Crystal Decoupling Capacitor  
The model shown in
Figure 13-8
can be used to calculate correct load capacitor for a given crystal. This  
model includes internal capacitors C

Ln

, external parasitic capacitance C

ELn

and external load capacitance  
C

Pn

.  
Figure 13-8.ꢀCrystal Circuit With Internal, External and Parasitic Capacitance  
C

L1  

C

L2  

XIN  
XOUT  
C

EL1  

C

P1  

C

P2  

C

EL2  

Using this model the total capacitive load for the crystal can be calculated as shown in the equation  
below:  
ꢀ
+
ꢀ
+
ꢀ  
ꢀ
+
ꢀ
+
ꢀ  
ꢁ
1  
ꢂ
1  
EL1  
ꢁ
2
ꢂ
2 EL2  
ꢀ
tot  
=
ꢀ
ꢁ
1  
+
ꢀ
+
ꢀ  
+
ꢀ
+
ꢀ
+
ꢀ  
ꢁ
2
ꢂ
2 EL2  
ꢂ
1  
EL1  
where C

tot

is the total load capacitance seen by the crystal. This value should be equal to the load  
capacitance value found in the crystal manufacturer datasheet.  
The parasitic capacitance C

ELn

can in most applications be disregarded as these are usually very small. If  
accounted for, these values are dependent on the PCB material and PCB layout.  
For some crystal the internal capacitive load provided by the device itself can be enough.
T
o
c
alculate the  
total load capacitance in this case. C

ELn

and C

Pn

are both zero, C

L1

= C

L2

= C

L

, and the equation reduces  
to the following:  
ꢀ
ꢁ
ꢀ
tot  
=
2
See the related links for equivalent internal pin capacitance values.  
13.6  
Programming and Debug Ports  
For programming and/or debugging the SAM R34/R35, the device should be connected using the Serial  
Wire Debug, SWD, interface. Currently the SWD interface is supported by several Microchip and third  
™
party programmers and debuggers, like the Atmel-ICE, SAM-ICE
 
or SAM R34/R35 Xplained Pro (SAM  
R34/R35 evaluation kit) Embedded Debugger.  
Refer to the Atmel-ICE, SAM-ICE or SAM R34/R35 Xplained Pro user guides for details on debugging  
and programming connections and options. For connecting to any other programming or debugging tool,  
refer to that specific programmer or debugger’s user guide.  
DS70005356C-page 52  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
The SAM R34/R35 Xplained Pro evaluation board supports programming and debugging through the  
onboard embedded debugger, so no external programmer or debugger is needed.  
Note:ꢀ
A pull-up resistor on the SWCLK pin is critical for reliable operation. Refer to related link for more  
information.  
Figure 13-9.ꢀSWCLK Circuit Connections  
V

DD  

1kΩ  
SWCLK  
Table 13-6.ꢀSWCLK Circuit Connections  
Pin Name  
Description  
Recommended Pin Connection  
SWCLK  
Serial wire clock pin  
Pull-up resistor 1kΩ  
13.6.1 Cortex
 
Debug Connector (10-pin)  
For debuggers and/or programmers that support the Cortex Debug Connector (10-pin) interface, the  
signals should be connected as shown in following figure. The signal details are described in the following  
table.  
DS70005356C-page 53  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
Figure 13-10.ꢀCortex Debug Connector (10-pin)  
V

DD  

Cortex Debug Connector  
(10-pin)  
VTref  
GND  
GND  
SWDIO  
SWCLK  
1
RESET  
SWCLK  
NC  
NC  
RESET  
NC  
NC  
SWDIO  
GND  
Table 13-7.ꢀCortex Debug Connector (10-pin)  
Header Signal Name  
SWCLK  
Description  
Serial wire clock pin  
SWDIO  
Serial wire bidirectional data pin  
T
a
rget device reset pin, active low  
RESET  
VTref  
T
a
rget voltage sense, should be connected to the device V

DD  

Ground  
GND  
13.6.2 10-pin
 
JTAGICE3 Compatible Serial Wire Debug Interface  
The JTAGICE3 debugger and programmer does not support the Cortex Debug Connector (10-pin)  
directly, hence a special pinout is needed to directly connect the SAM R34/R35 to the JTAGICE3,  
alternatively one can use the JTAGICE3 squid cable and manually match the signals between the  
JTAGICE3 and SAM R34/R35.
Figure 13-11
describes how to connect a 10-pin header that support  
connecting the JTAGICE3 directly to the SAM R34/R35 without the need for a squid cable. This can also  
be used for the Atmel-ICE AVR connector port.  
The JTAGICE3 squid cable or the JTACICE3 50mil cable can be used to connect the JTAGICE3  
programmer and debugger to the SAM R34/R35.
Figure 13-11
illustrates the correct pinout for the  
JTAGICE3 50 mil, and details are given in
T
a
ble 13-8
.  
DS70005356C-page 54  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
Figure 13-11.ꢀ10-pin JTAGICE3 Compatible Serial Wire Debug Interface  
10-pin JTAGICE3 Compatible  
Serial Wire Debug Header  
V

DD  

SWDCLK  
GND  
1
RESET  
SWCLK  
VTG  
NC  
SWDIO  
RESET  
NC  
NC  
NC  
NC  
SWDIO  
GND  
Table 13-8.ꢀ10-pin JTAGICE3 Compatible Serial Wire Debug Interface  
Header Signal Name  
SWDCLK  
SWDIO  
Description  
Serial wire clock pin  
Serial wire bidirectional data pin  
T
a
rget device reset pin, active low  
T
a
rget voltage sense, should be connected to the device V

DD  

Ground  
RESET  
VTG  
GND  
13.6.3 20-pin
 
IDC JTAG Connector  
For debuggers and/or programmers that support the 20-pin IDC JTAG Connector, e.g. the SAM-ICE, the  
signals should be connected as shown in
Figure 13-12
with details described in
T
a
ble 13-9
.  
DS70005356C-page 55  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Best Practices for Designers  
Figure 13-12.ꢀ20-pin IDC JTAG Connector  
V

DD  

20-pin IDC JTAG Connector  
VCC  
NC  
NC  
1
RESET  
GND  
GND  
GND  
GND  
GND  
GND*  
GND*  
GND*  
GND*  
NC  
SWDIO  
SWCLK  
SWDIO  
GND  
SWDCLK  
NC  
NC  
RESET  
NC  
NC  
Table 13-9.ꢀ20-pin IDC JTAG Connector  
Header Signal Name
 
Description  
SWDCLK  
SWDIO  
RESET  
VCC  
Serial wire clock pin  
Serial wire bidirectional data pin  
T
a
rget device reset pin, active low  
T
a
rget voltage sense, should be connected to the device V

DD  

Ground  
GND  
GND*  
These pins are reserved for firmware extension purposes. They can be left  
unconnected or connected to GND in normal debug environment. They are not  
essential for SWD in general.  
DS70005356C-page 56  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Reference Documentation  
14.  
Reference Documentation  
The following documents can be used for further study:  
1. SAM
 
L21 Family Data Sheet (

)  
2. Atmel
 
AVR2067: Crystal Characterization for AVR RF Application Note (

)  
3. Atmel
 
AT02865: RF Layout with Microstrip Application Note (

)  
4. Atmel
 
AT11309: Advanced RF Layout with Altium Application Note (

)  
5. Semtech
 
SX1276/77/78/79 Low Power Long Range Transceiver

6. SAM
 
R34 Chip-down Design Package (

)  
7. SAM
 
R34/R35 Errata Sheet (DS80000834)  
Note:ꢀ
This document describes synergistic features unique to the combined chip-set in LoRa  
applications. Reiteration of individual component details would be redundant and is best left to the  
primary data sheets. The reader is encouraged to review the primary documents listed above for up-to-  
date technical details and errata.  
DS70005356C-page 57  
Datasheet  
©
2019 Microchip
T
e
chnology Inc.  

SAM R34/R35  
Document Revision History  
15.  
Document Revision History  
Table 15-1.ꢀDocument Revision History  
Revision  
Date  
Section  
Description  
C
05/2019  
•
Features  
Updated  
•
Figure 4-2  
•
4.3 Peripheral
 
Key
T
a
ble  
•
T
a
ble 5-2  
•
T
a
ble 6-1  
•
7.1 Cortex
 
M0+ Processor  
•
Figure 8-1  
•
T
a
ble 8-1  
•
11.3.4 Line
 
Current in Low-Power  
Modes  
•
13.2.1 Power
 
Supply Connections  
•
14. Reference
 
Documentation  
•
9.2 Transceiver
 
Validation  
Added  
•
13.1.2 Operation
 
in Noisy  
Environment  
B
10/2018  
11.3 Performance
 
Characteristics  
Updated  
Added  
•
11.3.1 Method
 
of Derivation  
•
4.3 Peripheral
 
Key
T
a
ble  
•
T
a
ble 11-6  
•
T
a
ble 11-7  
•
T
a
ble 11-8  
•
T
a
ble 11-11  
Updated  
14. Reference
 
Documentation  
Document  
Updated  
A
04/2018  
Initial release  
DS70005356C-page 58  
Datasheet  
©
2019 Microchip
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e
chnology Inc.  

SAM R34/R35  
The Microchip Web Site  
Microchip provides online support via our web site at

. This web site is used as  
a means to make files and information easily available to customers. Accessible by using your favorite  
Internet browser, the web site contains the following information:  
•
Product Support
– Data sheets and errata, application notes and sample programs, design  
resources, user’s guides and hardware support documents, latest software releases and archived  
software  
•
General Technical Support
– Frequently Asked Questions (FAQ), technical support requests, online  
discussion groups, Microchip consultant program member listing  
•
Business of Microchip
– Product selector and ordering guides, latest Microchip press releases,  
listing of seminars and events, listings of Microchip sales offices, distributors and factory  
representatives  
Customer Change Notification Service  
Microchip’s customer notification service helps keep customers current on Microchip products.  
Subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata  
related to a specified product family or development tool of interest.  
To
r
egister, access the Microchip web site at

. Under “Support”, click on  
“Customer Change Notification” and follow the registration instructions.  
Customer Support  
Users of Microchip products can receive assistance through several channels:  
• Distributor
 
or Representative  
• Local
 
Sales Office  
• Field
 
Application Engineer (FAE)  
•
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chnical
 
Support  
Customers should contact their distributor, representative or Field Application Engineer (FAE) for support.  
Local sales offices are also available to help customers. A listing of sales offices and locations is included  
in the back of this document.  
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chnical support is available through the web site at:

Microchip Devices Code Protection Feature  
Note the following details of the code protection feature on Microchip devices:  
• Microchip
 
products meet the specification contained in their particular Microchip Data Sheet.  
• Microchip
 
believes that its family of products is one of the most secure families of its kind on the  
market today, when used in the intended manner and under normal conditions.  
• There
 
are dishonest and possibly illegal methods used to breach the code protection feature. All of  
these methods, to our knowledge, require using the Microchip products in a manner outside the  
operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is  
engaged in theft of intellectual property.  
• Microchip
 
is willing to work with the customer who is concerned about the integrity of their code.  
DS70005356C-page 59  
Datasheet  
©
2019 Microchip
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chnology Inc.  

SAM R34/R35  
• Neither
 
Microchip nor any other semiconductor manufacturer can guarantee the security of their  
code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the  
code protection features of our products. Attempts to break Microchip’s code protection feature may be a  
violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software  
or other copyrighted work, you may have a right to sue for relief under that Act.  
Legal Notice  
Information contained in this publication regarding device applications and the like is provided only for  
your convenience and may be superseded by updates. It is your responsibility to ensure that your  
application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR  
WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY  
OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS  
CONDITION, QUALIT
Y
,
P
ERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE.  
Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life  
support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend,  
indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting  
from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual  
property rights unless otherwise stated.  
Trademarks  
The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BitCloud,  
chipKI
T
,
c
hipKIT logo, CryptoMemory, CryptoR
F
,
d
sPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,  
Kleer, LANCheck, LINK MD, maXStylus, maX
T
o
uch, MediaLB, megaAVR, MOS
T
,
M
OST logo, MPLAB,  
OptoLyzer, PIC, picoPower, PICSTAR
T
,
P
IC32 logo, Prochip Designer, Q
T
o
uch, SAM-BA, SpyNIC, SS
T
,  
SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip
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e
chnology  
Incorporated in the U.S.A. and other countries.  
ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight  
Load, IntelliMOS, m
T
o
uch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip  
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e
chnology Incorporated in the U.S.A.  
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom,  
CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM,  
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming,  
ICS
P
,
I
NICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi,  
motorBench, MPASM, MP
F
,
M
PLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient  
Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE,  
Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II,
T
o
tal  
Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are  
trademarks of Microchip
T
e
chnology Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip
T
e
chnology Incorporated in the U.S.A.  
Silicon Storage
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e
chnology is a registered trademark of Microchip
T
e
chnology Inc. in other countries.  
GestIC is a registered trademark of Microchip
T
e
chnology Germany II GmbH & Co. KG, a subsidiary of  
Microchip
T
e
chnology Inc., in other countries.  
All other trademarks mentioned herein are property of their respective companies.  
DS70005356C-page 60  
Datasheet  
©
2019 Microchip
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e
chnology Inc.  

SAM R34/R35  
©
2019, Microchip
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e
chnology Incorporated, Printed in the U.S.A., All Rights Reserved.  
ISBN: 978-1-5224-4499-2  
Quality Management System Certified by DNV  
ISO/TS 16949  
Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer  
fabrication facilities in Chandler and
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e
mpe, Arizona; Gresham, Oregon and design centers in California  
®
®
and India. The Company’s quality system processes and procedures are for its PIC
 
MCUs and dsPIC  
®
DSCs, KEELOQ
 
code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design and manufacture of development  
systems is ISO 9001:2000 certified.  
DS70005356C-page 61  
Datasheet  
©
2019 Microchip
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Datasheet  
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2019 Microchip
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