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SAM R34/R35
®
SAM R34/R35 Low Power LoRa
Sub-GHz SiP Datasheet
Introduction
The SAM R34/R35 is a family of ultra-low power microcontrollers combined with a UHF transceiver
®
®
communication interface. It uses a 32-bit ARM
Cortex -M0+
processor and offers up to 256 KB of
Flash and 40 KB of SRAM, including an area of battery backed-up SRAM. The UHF transceiver supports
®
LoRa and
FSK modulation. LoRa technology is a spread spectrum protocol optimized for low data-rate,
ultra-long range signaling. It is ideal for battery-powered remote sensors and controls.
The SAM R34 includes an integrated microcontroller with USB and the UHF transceiver, making it
suitable for USB dongle applications or for software updates via USB. The SAM R35 offers the same
microcontroller functions along with the UHF transceiver without the USB interface.
Features
Operational Features
• Processor:
®
– ARM
Cortex -M0+ CPU running at up to 48 MHz (2.46CoreMark
/MHz)
– Single-Cycle
Hardware Multiplier
– Micro
Trace Buffer (MTB)
• Memory:
– In-System
Self-Programmable Flash Memory, with options for sizes – 256 KB, 128 KB or 64 KB
– Static
Random Access Memory (SRAM) with options for sizes – 32 KB, 16 KB or 8 KB
– Low
power SRAM Memory with option for sizes – 4 KB or 8 KB
• System:
– Power-on
Reset (POR) and Brown-out Reset
– Internal
and External Clock Options with 48 MHz Digital Frequency Locked Loop (DFLL48M)
and 48 MHz to 96 MHz Fractional Digital Phase Locked Loop (FDPLL96M)
– External
Interrupt Controller (EIC)
– Up
to 16 External Interrupts
– One
Non-Maskable Interrupt
– Two
Pin Serial Wire Debug (SWD) Programming,
T
e
st and Debugging Interfaces
• Operating
Voltage: 1.8V- 3.6V
• Low
Power Consumption
– Transceiver:
• RX
= 16 mA (typical)
• RFO_HF
= 33 mA (typical)
• PA_BOOST
= 95 mA (typical)
DS70005356C-page 1
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
– MCU:
• Idle,
Standby, and Backup Sleep Modes
• SleepWalking
peripherals
•
T
e
mperature
Range: -40°C to +85°C (Industrial)
RF/Analog Features
• Integrated
LoRa
T
e
chnology Transceiver:
– Tri-band
Coverage
• 137
MHz to 175 MHz
• 410
MHz to 525 MHz
• 862
MHz to 1020 MHz
– +20
dBm (100 mW) Max Power (VDDANA > 2.4 VDC)
– +17
dBm (50 mW) Max Power (Regulated PA)
– +13
dBm (20 mW) High-efficency PA
• High
Sensitivity:
™
– Down
to -136 dBm (LoRaWAN
protocol compliant modes)
– Down
to -148 dBm (proprietary narrowband modes)
• Up
to 168 dB Maximum Link Budget
• Robust
Front-End: IIp3 = -11 dBm
• Excellent
Blocking Immunity
• Low
RX Current of 17 mA (typical)
• Fully
Integrated Synthesizer with a Resolution of 61 Hz
• LoRa
T
e
chnology, (G)FSK, (G)MSK and OOK Modulation
• Preamble
Detection
• 127
dB Dynamic Range RSSI
• Automatic
RF Sense and CAD with Ultra-Fast Automatic Frequency Control (AFC) Packet Engine up
to 256 bytes with Cyclic Redundancy Check (CRC)
Peripheral Information
• 16-Channel
Direct Memory Access Controller (DMAC)
• 12-Channel
Event System
• Three
16-bit Timer/Counters (TC), configurable as either of the following:
– One
8-bit TC with compare/capture channels
– One
16-bit TC with compare/capture channels
– One
32-bit TC with compare/capture channels, by using two TCs
• Two
24-bit and one 16-bit Timer/Counters for Control (TCC), with Extended Functions:
– Up
to four compare channels with optional complementary output
– Generation
of synchronized Pulse Width Modulation (PWM) pattern across port pins
– Deterministic
fault protection, fast decay and configurable dead-time between complementary
output
– Dithering
that increases resolution with up to five bit and reduces quantization error
• 32-bit
Real Time Counter (RTC) with Clock/Calendar Function
• Watchdog
Timer (WDT)
DS70005356C-page 2
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
• CRC-32
Generator
• One
Full-Speed (12 Mbps) Universal Serial Bus (USB) 2.0 Interface:
– Embedded
host and device function
– Eight
endpoints
• Up
to Five Serial Communication Interfaces (SERCOM), each configurable to operate as either of the
following:
– USART
with full-duplex and single-wire half-duplex configuration
– I2C
up to 3.4 MHz
– Serial
Peripheral Interface (SPI)
– Local
Interconnect Network (LIN) Slave
• One
12-bit, 1 Msps Analog-to-Digital Converter (ADC) with up to Eight External Channels:
– Differential
and single-ended input
– Automatic
offset and gain error compensation
– Oversampling
and decimation in hardware to support 13-, 14-, 15-, or 16-bit resolution
• Two
Analog Comparators (AC) with Window Compare Function
• Peripheral
T
o
uch Controller (PTC):
– 18-channel
capacitive touch and proximity sensing
Package Information
• 27
Programmable I/O Pins
• 64
Lead Ball Grid Array (BGA)
DS70005356C-page 3
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Table of Contents
Introduction……………………………………………………………………………………………………….1
Features………………………………………………………………………………………………………….. 1
1. Description…………………………………………………………………………………………………..6
2. Configuration
Summary………………………………………………………………………………..
.
7
3. Ordering
Information for SAM R34/R35………………………………………………………….. 9
3.1. SAM
R34/R35 Ordering Codes………………………………………………………………………………………
.
9
4. System
Introduction…………………………………………………………………………………….10
4.1. SAM
R34/R35 Pinout Details……………………………………………………………………………………….. 10
4.2. SiP
Block Diagram……………………………………………………………………………………………………… 10
4.3. Peripheral
Key
T
a
ble…………………………………………………………………………………………………… 11
5. I/O
Multiplexing and Considerations………………………………………………………………14
5.1. Multiplexed
Signals…………………………………………………………………………………………………….. 14
5.2. Internal
Multiplexed Signals…………………………………………………………………………………………. 15
5.3. Other
Functions…………………………………………………………………………………………………………..16
6. Signal
Description……………………………………………………………………………………….18
6.1. Signal
Details…………………………………………………………………………………………………………….. 18
7. Processor
and Architecture…………………………………………………………………………. 21
7.1. Cortex
M0+ Processor………………………………………………………………………………………………… 21
7.2. Nested
Vector Interrupt Controller………………………………………………………………………………….22
7.3. Micro
Trace Buffer………………………………………………………………………………………………………
.
2
4
7.4. High-Speed
Bus System……………………………………………………………………………………………… 25
8. Application
Schematic Introduction………………………………………………………………. 30
8.1. SAM
R34/R35 Basic Application Schematic…………………………………………………………………… 30
8.2. SAM
R34/R35 Bill of Materials……………………………………………………………………………………..
.
3
2
9. Transceiver
Circuit Description……………………………………………………………………..34
9.1. Transceiver
Pin Description…………………………………………………………………………………………..34
9.2. Transceiver
Validation…………………………………………………………………………………………………. 35
10. Microcontroller Interface……………………………………………………………………………..
.
3
6
11. Electrical Characteristics…………………………………………………………………………….. 38
11.1. Absolute
Maximum Ratings…………………………………………………………………………………………..38
11.2. General
Operating Conditions……………………………………………………………………………………….38
11.3. Performance
Characteristics………………………………………………………………………………………..
.
3
9
12. SAM R34/R35 Package Information………………………………………………………………44
DS70005356C-page 4
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
12.1. Package
Drawings……………………………………………………………………………………………………… 44
12.2. SAM
R34/R35 Land Pattern………………………………………………………………………………………….45
13. Best Practices for Designers……………………………………………………………………….. 46
13.1. Introduction…………………………………………………………………………………………………………………46
13.2. Power
Supply…………………………………………………………………………………………………………….. 46
13.3. External
Reset Circuit…………………………………………………………………………………………………..49
13.4. Unused
or Unconnected Pins………………………………………………………………………………………..50
13.5. Clocks
and Crystal Oscillators……………………………………………………………………………………….50
13.6. Programming
and Debug Ports……………………………………………………………………………………..52
14. Reference Documentation……………………………………………………………………………57
15. Document Revision History…………………………………………………………………………. 58
The Microchip Web Site…………………………………………………………………………………… 59
Customer Change Notification Service………………………………………………………………..59
Customer Support…………………………………………………………………………………………… 59
Microchip Devices Code Protection Feature……………………………………………………….. 59
Legal Notice…………………………………………………………………………………………………….60
Trademarks……………………………………………………………………………………………………. 60
Quality Management System Certified by DNV…………………………………………………….61
Worldwide Sales and Service…………………………………………………………………………….62
DS70005356C-page 5
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Description
1.
Description
The SAM R34/R35 devices are a series of ultra-low power microcontrollers equipped with a UHF
transceiver. It uses the 32-bit ARM Cortex-M0+ processor at max. 48 MHz (2.46 CoreMark/MHz) and
offers 256 KB of Flash and 40 KB of SRAM. Sophisticated power management technologies, such as
power domain gating, SleepWalking, ultra-low power peripherals and more, allow for very low line-power
consumptions.
The UHF transceiver supports LoRa and FSK modulation schemes. The LoRa technology is optimized for
long-range communication with minimal line-power demand. The transceiver can work from frequencies
of 137 MHz to 1020 MHz. Maximum transmit power is +20 dBm without an external amplification.
Operational frequency bands and power limits are defined by local regulations and the LoRa Alliance.
LoRa network stack regional options insure compliance. FSK modulation is also supported for
applications including IEEE 802.15.4g, WiSUN, and legacy proprietary networks.
All devices have accurate low power external and internal oscillators. Different clock domains can be
independently configured to run at different frequencies, enabling power-saving by running each
peripheral at its optimal clock frequency, thus maintaining a high CPU frequency while reducing power
consumption.
The SAM R34/R35 devices have four software-selectable sleep modes: Idle, Standby, Backup and Off. In
Idle mode, the CPU is stopped while all other functions may be kept running. In Standby mode, all clocks
and functions are stopped except those selected to continue running. In this mode all RAMs and logic
contents are retained. The device supports SleepWalking, which allows some peripherals to wake-up
from sleep based on predefined conditions, thus allowing some internal operations like DMA transfer
and/or the CPU to wake-up only when needed; for example, when a threshold is crossed or a result is
ready. The event system supports synchronous and asynchronous events, allowing peripherals to
receive, react to and send events even in Standby mode. Off mode is not advised, as high impedance on
the internal SPI bus results in metastability.
The SAM R34/R35 devices have two software-selectable performance levels (PL0 and PL2) allowing the
user to scale the lowest core voltage level that supports the operating frequency.
T
o
f
urther minimize
current consumption, specifically leakage dissipation, the devices utilize a power domain gating technique
with retention to turn off some logic areas while keeping their logic state. This technique is fully handled in
hardware.
The Flash program memory can be reprogrammed in-system through the Serial Wire Debug (SWD)
interface. The same interface can also be used for non-intrusive on-chip debugging of application code. A
boot loader running in the device can use any communication interface to download and upgrade the
application program in the Flash memory.
The SAM R34/R35 devices are supported with a full suite of programs and system development tools,
including C compilers, macro assemblers, program debugger/simulators, programmers, and evaluation
kits.
DS70005356C-page 6
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Configuration Summary
2.
Configuration Summary
Table 2-1.ꢀConfiguration Summary
Parameter
SAM R34
SAM R35
T
o
tal Pins
64
64
27
General Purpose I/O pins
27
(GPIOs)
Flash
256 KB
256 KB
8 KB
32 KB
8 KB
3
Flash RWW Section
System SRAM
Low Power SRAM
8 KB
32 KB
8 KB
3
Timer Counter (TC)
Instances
Waveform Output
Channels per TC
Instance
2
2
Timer Counter for Control
3
(TCC) Instances
3
Waveform Output
Channels per TCC
4/2/2
4/2/2
USB Interface
1
0
Serial Communication
Interface (SERCOM)
Instances
5+1
(1)
5+1
(1)
Analog-to-Digital
Converter (ADC)
Channels
8
2
8
2
Analog Comparators
(AC)
Real-Time Counter (RTC)
Yes
Y
e
s
RTC Alarms
1
1
RTC Compare Values
1 for 32-bit value or
2 for 16-bit values
1 for 32-bit value or
2 for 16-bit values
External Interrupt Lines
15
15
Maximum CPU
Frequency
48 MHz
48 MHz
Package
BGA
BGA
DS70005356C-page 7
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Configuration Summary
………..continued
Parameter
SAM R34
SAM R35
External
32.768 kHz Crystal
External
Oscillator (XOSC32K)
Oscillators
• 16
MHz crystal oscillator for TRX
• 16
MHz crystal oscillator for TRX
(XOSCRF)
(XOSCRF)
• 0.4-32
MHz crystal oscillator
(XOSC)
• 0.4-32
MHz crystal oscillator
(XOSC)
• 32.768
kHz external oscillator
(OSC32K)
• 32.768
kHz external oscillator
(OSC32K)
• 32
kHz ultra-low power internal
oscillator (OSCULP32K)
• 32
kHz ultra-low power internal
oscillator (OSCULP32K)
• 8
MHz high-accuracy internal
oscillator (OSC8M)
• 8
MHz high-accuracy internal
oscillator (OSC8M)
• 48
MHz Digital Frequency
Locked Loop (DFLL48M)
• 48
MHz Digital Frequency
Locked Loop (DFLL48M)
• 96
MHz Fractional Digital
• 96
MHz Fractional Digital
Phased Locked Loop (FDPLL96)
Phased Locked Loop (FDPLL96)
Event System Channels
12
12
SW Debug Interface
Y
e
s
Y
e
s
Y
e
s
Y
e
s
Watchdog Timer (WDT)
1. SERCOM4
is internally connected to the Transceiver (TRX).
DS70005356C-page 8
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Ordering Information for SAM R34/R35
3.
Ordering Information for SAM R34/R35
Figure 3-1.ꢀSAM R34/R35 Ordering Information
34
J
18
B
T-
I /
xxx
ATSAMR
Product Family
SAMR = SoC Microcontroller with RF
Product Series
34 = Cortex M0+ CPU + DMA + USB + LoRa Transeiver
35 = Cortex M0+ CPU + DMA + LoRa Transeiver
Pin Count
J = 64 Pins
Flash Memory Density
16 = 64 KB
17 = 128 KB
18 = 256 KB
Device Variant
B = Release to Production
Package Carrier
T =
T
a
pe and Reel
T
e
mperature Rating
I = – 40 to + 85
o
C
Package Type
7JX = 64 Ball 6×6 mm TFBGA
3.1
SAM R34/R35 Ordering Codes
Table 3-1.ꢀSAM R34/R35 Ordering Codes
Ordering Code
Description
ATSAMR34J16BT-I/7JX
ATSAMR34J17BT-I/7JX
LoRa SiP Transceiver USB 64K Flash 8K SRAM, 4KB LP SRAM, T&R
LoRa SiP Transceiver USB 128K Flash 16K SRAM, 8KB LP SRAM,
T&R
ATSAMR34J18BT-I/7JX
LoRa SiP Transceiver USB 256K Flash 32K SRAM, 8KB LP SRAM,
T&R
ATSAMR35J16BT-I/7JX
ATSAMR35J17BT-I/7JX
ATSAMR35J18BT-I/7JX
LoRa SiP Transceiver 64K Flash 8K SRAM, 4KB LP SRAM, T&R
LoRa SiP Transceiver 128K Flash 16K SRAM, 8KB LP SRAM, T&R
LoRa SiP Transceiver 256K Flash 32K SRAM, 8KB LP SRAM, T&R
Note:ꢀ
The device variant (last letter of the ordering number) is independent of the die revision.
DS70005356C-page 9
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
System Introduction
4.
System Introduction
4.1
SAM R34/R35 Pinout Details
Figure 4-1.ꢀSAM R34/R35 Pin Placement
1
2
3
4
5
6
7
8
A
B
C
D
E
RFI_HF
RFO_HF
VBAT_RF
VR_PA
GND_RF
GND_RF
VDDANA
RXTX
PA00
GNDANA
PB03
PA01
PB02
VDDCORE
GND
VSW
RESET*
PA28
VDDIN
GND
VDDIO2
PA24
PA05
PA30
PB23
PA25
PA04
GND
PA31
GND
PA23
PA22
GND_RF
PA_BOOST
RFO_LF
RFI_LF
GNDANA
GND_RF
GND_RF
VR_ANA
PA06
PA27
PB22
PA17
PA18
PA19
F
PA07
PA08
PA09
PA13
PA16
PA14
G
H
GND_RF
VBAT_ANA
VDDI01
VR_DIG
GND_RF
GND_RF
GND_RF
XTA
GND_RF
XTB
PA15
VBAT_DIG
4.2
SiP Block Diagram
The following figure illustrates the SAM R34/R35 System-in-Package (SiP) block diagram.
DS70005356C-page 10
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
System Introduction
Figure 4-2.ꢀSystem Block Diagram with MCU and Transceiver
IOBUS
256/128/64KB
NVM
32/16/8KB
RAM
CORTEX-M0+
PROCESSOR
Fmax 48 MHz
SWCLK
SWDIO
SERIAL
WIRE
NVM Controller
Cache
SRAM
CONTROLLER
DEVICE
SERVICE
UNIT
M
S
S
S
M
DP
HIGH SPEED
BUS MATRIX
USB FS
DEVICE
MINI-HOST
DM
SOF 1KHZ
S
(SAMR34 ONLY)
M
S
8/8/4KB
RAM
AHB-APB
BRIDGE B
S
S
M
LP SRAM
CONTROLLER
S
LOW POWER
BUS MATRIX
PERIPHERAL
ACCESS
M
DMA
CONTROLLER
S
S
S
EVENT
AHB-APB
BRIDGE E
AHB-APB
BRIDGE A
AHB-APB
BRIDGE D
AHB-APB
BRIDGE C
PAD0
PAD1
DMA
DMA
PAD2
PAD3
5 x SERCOM
MAIN CLOCKS
CONTROLLER
WO0
WO1
4 x TIMER / COUNTER
EVENT
OSCILLATORS CONTROLLER
OSC16M
WO0
WO1
(2)
WOn
DMA
3x TIMER / COUNTER
FOR CONTROL
DFLL48M
EVENT
XIN
XOSC
XOUT
FDPLL96M
DMA
AES
DMA
GENERIC CLOCK
GCLK_IO[7..0]
TRNG
CONTROLLER
WATCHDOG
TIMER
POWER
MANAGER
OSC32K CONTROLLER
XIN32
XOUT32
WO0
WO1
DMA
XOSC32K
OSCULP32K
OSC32K
TIMER / COUNTER
AIN[19..0]
DMA
8-CHANNEL
12-bit ADC 1MSPS
VREFA
VREFB
SUPPLY CONTROLLER
EVENT
BOD33
VREF
VREG
AIN[3..0]
2 ANALOG
EVENT
COMPARATORS
X[15..0]
Y[15..0]
PERIPHERAL
TOUCH
CONTROLLER
RESET
EXTWAKEx
RESET
CONTROLLER
EVENT
IN[2..0]
OUT
REAL TIME
COUNTER
3 x CCL
EVENT
EVENT
PAD0
PAD1
EXTINT[15..0]
NMI
EXTERNAL INTERRUPT
CONTROLLER
SERCOM
PAD2
PAD3
DIO(0…5)
SERCOM4
CONFIGURATION REGISTERS AND FIFO
DEMOD
MODULATOR
LoRa/FSK/OOK
LoRa/FSK/OOK
ADC
MUX
i
Q
HIGH BAND
FRAC-N PLL
OSC
RF
LOW BAND
FRAC-N PLL
PA
HF
PA
HP
PA
HF
4.3
Peripheral Key Table
The following table lists all the peripherals supported in SAM R34 and SAM R35. Also, provides the
references to relevant sections for detailed information.
DS70005356C-page 11
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
System Introduction
Note:ꢀ
The peripherals that are not listed in the following table must not be used.
Table 4-1.ꢀPeripheral Key Table
Peripheral
Description
Reference
Document
Topic # and Keyword
Notes
AC
Analog Comparator
1
1
43. AC – Analog Comparators
ADC
Analog-to-Digital
Converter
42. ADC – Analog-to-Digital
Converter
AES
Advanced Encryption
Engine
1
38. AES – Advanced Encryption
Standard
BOD33
CCL
Brown-out Detector
1
1
23. SUPC – Supply Controller
Configurable Custom
Logic
40. CCL – Configurable Custom
Logic
CRC
DMA
EIC
Cyclic Redundancy
Check-sum
1
1
1
15.11.3 32-bit Cyclic
Redundancy Check CRC32
Direct Memory Access
Controller
26. DMAC – Direct Memory
Access Controller
External Interrupt
27. EIC – External Interrupt
Controller
EVSYS
GCLK
Event System
1
1
30. EVSYS – Event System
Generic Clock Control
17. GCLK – Generic Clock
Controller
I2C
Inter-integrated Circuit
Interface
1
34. SERCOM I2C – SERCOM
Inter-integrated Circuit
Peripheral function F-
SERCOM4 pins
(PB30, PB31, PC18,
PC19) are internally
connected to
Transceiver. For
details, refer to
10.
Microcontroller
Interface
.
MCLK
Main Clock Control
1
1
18. MCLK – Main Clock
NVMCTRL
Nonvolatile Memory
Controller
28. NVMCTRL – Nonvolatile
Memory Controller
OSC32KCTRL 32
kHz Clock
1
1
22. OSC32KCTRL – 32KHz
Oscillators Controller
OSCCTRL
Clock Control
21. OSCCTRL – Oscillators
Controller
PA_BOOST
PM
RF Output High-power
Power Management
GPIO Port Controller
Power-On Reset
5
1
1
1
5.4.2. RF Power Amplifiers
20. PM – Power Manager
29. PORT – I/O Pin Controller
23. SUPC – Supply Controller
PORT
Limited to 27 ports
PORT
DS70005356C-page 12
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
System Introduction
………..continued
Peripheral
Description
Reference
Document
Topic # and Keyword
Notes
PTC
Peripheral
T
o
uch
Controller (RC)
1
45. PTC – Peripheral
T
o
uch
Controller
RFI_HF
RF Input High
Frequency
5
5.5. Receiver Description
RFI_LF
RF Input Low Frequency
5
5.5. Receiver Description
5.4.2. RF Power Amplifiers
RFO_HF
RF Output High
Frequency
5
RFO_LF
RF Output Low
Frequency
5
5.4.2. RF Power Amplifiers
RSTC
RTC
SPI
Reset Control
1
1
1
19. RSTC – Reset Controller
Real-Time Counter
25. RTC – Real-Time Counter
Serial Peripheral
Interface
33. SERCOM SPI – SERCOM
Serial Peripheral Interface
Peripheral function F-
SERCOM4 pins
(PB30, PB31, PC18,
PC19) are internally
connected to
Transceiver. For
details, refer to
10.
Microcontroller
Interface
.
TC
Timer Counter
1
1
35. TC – Timer/Counter
TCC
Timer Counter for
Control
36. TCC – Timer/Counter for
Control Applications
TRNG
Random Number
Generator
1
1
37. TRNG – True Random
Number Generator
USART
Universal Synchronous
and Asynchronous
Receiver/Transmitter
32. SERCOM USART –
SERCOM Universal
Synchronous and
Peripheral function F-
SERCOM4 pins
(PB30, PB31, PC18,
PC19) are internally
connected to
Asynchronous Receiver and
Transmitter
Transceiver.
USB
Full-speed Universal
1
39. USB – Universal Serial Bus
SAMR34 Only. For
Serial Bus 2.0 interface
details, refer to
10.
Microcontroller
Interface
.
VBAT
WDT
External Battery Input
Watchdog Timer
RF Oscillator
1
1
5
23. SUPC – Supply Controller
24. WDT – Watchdog Timer
5.3. Frequency Synthesis
XTA/B
Note:ꢀ
For more details on the peripherals supported by the SAM R34, refer to
T
a
ble 5-1
.
DS70005356C-page 13
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
I/O Multiplexing and Considerations
5.
I/O Multiplexing and Considerations
5.1
Multiplexed Signals
By default, each pin is controlled by the PORT as a general purpose I/O and alternatively may be
assigned to one of the peripheral functions A, B, C, D, E,
F
,
G
, H or I.
T
o
e
nable a peripheral function on a
pin, the Peripheral Multiplexer Enable bit in the Pin Configuration register corresponding to that pin
(PINCFGn.PMUXEN, n = 0..31) in the PORT must be written to ‘1’. The selection of peripheral functions
A to H are done by writing to the Peripheral Multiplexing Odd and Even bits in the Peripheral Multiplexing
register (PMUXn.PMUXE/O) in the POR
T
.
Table 5-1.ꢀPort Function Multiplexing
(1)(2)
SAM
I/O Pin
Supply
A
B
C
D
E
F
G
H
I
R34/R35
Pin
(1)(2)
EIC
RSTC
REF
ADC
AC
PTC X-
PTC Y-
SERCOM
SERCOM- ALT
TC/TCC
TCC
COM
AC/GCLK/
SUPC
CCL
lines
lines
A3
A4
D3
C4
E3
F3
F4
F5
F6
F8
G8
F7
E6
E7
E8
D8
D7
B8
C8
E5
C7
PA00
PA01
PA04
PA05
PA06
PA07
PA08
PA09
PA13
PA14
PA15
PA16
PA17
PA18
PA19
PA22
PA23
PA24
PA25
PB22
PB23
VSWOUT EXTINT[0]
VSWOUT EXTINT[1]
EXTWAKE[0]
EXTWAKE[1]
–
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM1/
PAD[0]
TCC2/WO[0]
TCC2/WO[1]
TCC0/WO[0]
TCC0/WO[1]
TCC1/WO[0]
TCC1/WO[1]
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM1/
PAD[1]
–
–
–
VDDANA
VDDANA
VDDANA
VDDANA
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
VDDIN
VDDIN
EXTINT[4]
EXTINT[5]
EXTINT[6]
EXTINT[7]
NMI
EXTWAKE[4] VREFB AIN[4]
AIN[0]
AIN[1]
AIN[2]
AIN[3]
–
–
–
SERCOM0/
PAD[0]
–
–
CCL0/ IN[0]
CCL0/ IN[1]
CCL0/ IN[2]
EXTWAKE[5]
–
AIN[5]
AIN[6]
AIN[7]
AIN[16]
AIN[17]
—
–
–
SERCOM0/
PAD[1]
–
–
EXTWAKE[6]
–
–
Y[4]
–
SERCOM0/
PAD[2]
–
–
EXTWAKE[7]
–
–
SERCOM0/
PAD[3]
–
–
CCL0/
OUT[0]
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–
X[0]
X[1]
—
Y[6]
Y[7]
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM0/
PAD[0]
SERCOM2/
PAD[0]
TCC0/WO[0] TCC1/
WO[2]
–
–
CCL1/ IN[3]
CCL1/ IN[1]
—
EXTINT[9]
EXTINT[13]
EXTINT[14]
EXTINT[15]
EXTINT[0]
EXTINT[1]
EXTINT[2]
EXTINT[3]
EXTINT[6]
EXTINT[7]
EXTINT[12]
EXTINT[13]
EXTINT[6]
EXTINT[7]
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM0/
PAD[1]
SERCOM2/
PAD[1]
TCC0/WO[1] TCC1/
WO[3]
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM2/
PAD[1]
SERCOM4/
PAD[1]
TCC2/WO[1] TCC0/
WO[7]
AC/CMP[1]
GCLK_IO[0]
GCLK_IO[1]
GCLK_IO[2]
GCLK_IO[3]
AC/CMP[0]
AC/CMP[1]
GCLK_IO[6]
GCLK_IO[7]
—
—
—
SERCOM2/
PAD[2]
SERCOM4/
PAD[2]
TC4/ WO[0]
TC4/ WO[1]
TCC0/
WO[4]
—
—
—
SERCOM2/
PAD[3]
SERCOM4/
PAD[3]
TCC0/
WO[5]
—
—
X[4]
X[5]
X[6]
X[7]
X[10]
X[11]
—
SERCOM1/
PAD[0]
SERCOM3/
PAD[0]
TCC2/WO[0] TCC0/
WO[6]
CCL0/ IN[0]
CCL0/ IN[1]
CCL0/ IN[2]
—
SERCOM1/
PAD[1]
SERCOM3/
PAD[1]
TCC2/WO[1] TCC0/
WO[1]
—
SERCOM1/
PAD[2]
SERCOM3/
PAD[2]
TC4/ WO[0]
TC4/ WO[1]
TC0/ WO[0]
TC0/ WO[1]
TC1/ WO[0]
TC1/ WO[1]
TC3/ WO[0]
TC3/ WO[1]
TCC0/
WO[2]
—
SERCOM1/
PAD[3]
SERCOM3/
PAD[3]
TCC0/
WO[3]
CCL0/
OUT[0]
—
SERCOM3/
PAD[0]
SERCOM5/
PAD[0]
TCC0/
WO[4]
CCL2/ IN[0]
CCL2/ IN[1]
CCL2/ IN[2]
—
SERCOM3/
PAD[1]
SERCOM5/
PAD[1]
TCC0/
WO[5]
USB/SOF 1
kHz[6]
—
SERCOM3/
PAD[2]
SERCOM5/
PAD[2]
TCC1/
WO[2]
USB/ DM[6]
—
—
SERCOM3/
PAD[3]
SERCOM5/
PAD[3]
TCC1/
WO[3]
USB/ DP[6]
—
CCL2/
OUT[2]
—
—
—
—
SERCOM5/
PAD[2]
—
—
—
—
GCLK_IO[0]
GCLK_IO[1]
CCL0/ IN[0]
—
—
SERCOM5/
PAD[3]
CCL0/
OUT[0]
E4
C6
PA27
PA28
VDDIN
VDDIN
EXTINT[15]
EXTINT[8]
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
GCLK_IO[0]
GCLK_IO[0]
—
—
DS70005356C-page 14
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
I/O Multiplexing and Considerations
………..continued
(1)(2)
SAM
I/O Pin
Supply
A
B
C
D
E
F
G
H
I
R34/R35
Pin
(1)(2)
EIC
RSTC
REF
ADC
AC
PTC X-
PTC Y-
SERCOM
SERCOM- ALT
TC/TCC
TCC
COM
AC/GCLK/
SUPC
CCL
lines
lines
C5
D5
B4
C3
PA30
PA31
PB02
PB03
VDDIN
VDDIN
EXTINT[10]
EXTINT[11]
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
SERCOM1/
PAD[2]
TCC1/WO[0]
TCC1/WO[1]
TC2/ WO[0]
TC2/ WO[1]
—
—
—
—
SWCLK
GCLK_IO[0]
—
CCL1/ IN[0]
(3)
—
—
—
—
—
—
—
SERCOM1/
PAD[3]
SWDIO
—
CCL1/
OUT[1]
VSWOUT EXTINT[2]
VSWOUT EXTINT[3]
AIN[10]
AIN[11]
SERCOM5/
PAD[0]
SUPC/ OUT[1]
SUPC/VBAT
CCL0/
OUT[0]
SERCOM5/
PAD[1]
—
1. All
analog pin functions are on peripheral function B. Peripheral function B must be selected to
disable the digital control of the pin.
2. Only
some pins can be used in SERCOM I2C mode. See
5.3.3 SERCOM
I2C Pins
.
3. This
function is only activated in the presence of a debugger.
4. When
an analog peripheral is enabled, the analog output of the peripheral interferes with the
alternative functions of this pin. This is also true even when the peripheral is used for internal
purposes.
5. Clusters
of multiple GPIO pins are sharing the same supply pin. See
5.3.4 GPIO
Cluster
.
6. USB
is not available on the SAM R35 devices.
5.2
Internal Multiplexed Signals
By default, each pin is controlled by the PORT as a general purpose I/O and alternatively may be
assigned to one of the peripheral functions A, B, C, D, E,
F
,
G
, H or I.
T
o
e
nable a peripheral function on a
pin, the Peripheral Multiplexer Enable bit in the Pin Configuration register corresponding to that pin
(PINCFGn.PMUXEN, n = 0-31) in the PORT must be written to ‘1’. The selection of peripheral functions A
to H are done by writing to the Peripheral Multiplexing Odd and Even bits in the Peripheral Multiplexing
register (PMUXn.PMUXE/O) in the POR
T
.
Table 5-2.ꢀInternal Multiplexed Signals
Internal
Signal
I/O Pin
Supply
Type
A
B
C
D
E
F
G
H
I
EIC
RSTC REF ADC
AC PTC
X-
PTC
SERCOM
SERCOM-
ALT
TC/TCC TCC/
SERCOM
COM AC/GCLK/
SUPC
CCL
Y-
lines
lines
DIO0
PB16
PA11
PA12
PB17
PA10
PB00
PB15
PB30
PB31
PC18
VDDIO
VDDIO
VDDIO
VDDIO
VDDIO
I/O
I/O
I/O
I/O
I/O
EXTINT[0]
EXTINT[11]
EXTINT[12]
EXTINT[1]
EXTINT[10]
EXTINT[0]
EXTINT[15]
EXTINT[14]
EXTINT[15]
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SERCOM5/
PAD[0]
–
TCC2/
WO[0]
TCC0/ WO[4]
TCC0/ WO[3]
TCC0/ WO[6]
TCC0/ WO[5]
TCC0/ WO[2]
–
–
–
–
–
–
–
–
–
–
–
GCLK_IO[2]
GCLK_IO[5]
AC/CMP[0]
GCLK_IO[3]
GCLK_IO[4]
SUPC_PSOK
GCLK_IO[1]
–
CCL3/
IN[11]
DIO1/
DCLK
AIN[19]
X[3]
Y[9]
SERCOM0/
PAD[3]
SERCOM2/
PAD[3]
TCC1/
WO[1]
CCL1/
OUT[1]
DIO2/
DATA
–
–
–
SERCOM2/
PAD[0]
SERCOM4/
PAD[0]
TCC2/
WO[0]
–
DIO3
DIO4
DIO5
RF_RST
MOSI
SEL
–
–
–
SERCOM5/
PAD[1]
–
TCC2/
WO[1]
CCL3/
OUT[3]
AIN[18]
X[2]
Y[8]
SERCOM0/
PAD[2]
SERCOM2/
PAD[2]
TCC1/
WO[0]
CCL1/
IN[5]
VDDANA I/O
AIN[8]
–
–
–
–
–
–
–
SERCOM5/
PAD[2]
TCC3/
WO[0]
CCL0/
IN[1]
VDDIO
VDDIO
VDDIO
VDDIO
I/O
I/O
I/O
I/O
–
–
–
–
X[15]
SERCOM4/
PAD[3]
–
TCC0/
WO[1]
–
CCL3/
IN[10]
–
–
–
–
–
–
SERCOM5/
PAD[0]
TCC0/
WO[0]
SERCOM4/
PAD[2]
–
–
–
SERCOM5/
PAD[1]
TCC0/
WO[1]
SERCOM4/
PAD[1]
–
SCLK
–
–
SERCOM4/
PAD[3]
–
DS70005356C-page 15
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
I/O Multiplexing and Considerations
………..continued
Internal
Signal
I/O Pin
Supply
Type
A
B
C
D
E
F
G
H
I
EIC
RSTC REF ADC
AC PTC
X-
PTC
SERCOM
SERCOM-
ALT
TC/TCC TCC/
SERCOM
COM AC/GCLK/
SUPC
CCL
Y-
lines
lines
MISO
PC19
VDDIO
I/O
–
–
–
–
–
–
–
–
–
–
SERCOM4/
PAD[0]
–
–
–
5.3
Other Functions
5.3.1
Oscillator Pinout
The oscillators are not mapped to the normal PORT functions, and their multiplexing is controlled by
registers in the Oscillator Controller (OSCCTROL) and in the 32kHz Oscillators Controller
(OSC32KCTRL).
Table 5-3.ꢀOscillator Pinout
Oscillator
Supply
Signal
XIN
I/O Port
PA14
XOSC
VDDIO
XOUT
XIN32
XOUT32
PA15
XOSC32K
VSWOUT
PA00
PA01
5.3.2
Serial Wire Debug Interface Pins
Only the SWCLK pin is mapped to the normal PORT functions. A debugger cold-plugging or hot-plugging
detection will automatically switch the SWDIO port to the SWDIO function.
Table 5-4.ꢀSerial Wire Debug Interface Pinout
Signal
Supply
VDDIN
VDDIN
I/O Pin
PA30
SWCLK
SWDIO
PA31
5.3.3
SERCOM I
2
C Pins
Table 5-5.ꢀSERCOM Pins Supporting I
2
C
Device
Pins Supporting I
2
C HS Mode
SAM R34/R35
PA08, PA09, PA13, PA16, PA17, PA22, PA23
DS70005356C-page 16
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
I/O Multiplexing and Considerations
5.3.4
GPIO Cluster
Table 5-6.ꢀGPIO Clusters
Package Cluster GPIO
Supply Pins Connected to
the Cluster
64 Pins
1
2
PA31 PA30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VDDIN C4/GND D4
PA28 PA27 PB23 PB22
VDDIN C4/GND D4 and
VDDIO C6/GND C5
3
PA25 PA24 PA23 PA22
–
–
PA19 PA18 PA17 PA16 PA15 PA14 PA13 VDDIO
C6/GND C5 and
VDDIO F3/GND F4
4
5
6
–
–
PA09 PA08
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VDDIO F3/GND F4
PA07 PA06 PA05 PA04
VDDANA C1/GNDANA C3
VDDANA C1/GNDANA C3
–
–
PA01 PA00 PB03 PB02
5.3.5
TCC Configurations
The SAML21 has three instances of the Timer/Counter for Control applications (TCC) peripheral,
TCC<2:0>.
Table 5-7.ꢀTCC Configuration Summary
TCC Channels
Waveform Counter
Fault Dithering Output
Dead
SWAP Pattern
Generation
No. (CC_NUM)
Output
(WO_NUM)
Size
Matrix Time
Insertion
(DTI)
Y
e
s
—
0
1
2
4
2
2
8
24-bit
24-bit
16-bit
Y
e
s
Y
e
s
Y
e
s
Y
e
s
Y
e
s
Y
e
s
—
Y
e
s
—
Y
e
s
4
2
Y
e
s
—
—
—
—
Note:ꢀ
The number of CC register (CC_NUM)_ for each TCC corresponds to the number of compare/
capture channels to ensure that a TCC can have more Waveform Outputs (WO_NUM) than CC registers.
DS70005356C-page 17
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Signal Description
6.
Signal Description
This section provides the required information to understand the origin and the function of each such
signal. The nature of a SIP results in the situation where the package pins may be bonded to the
microcontroller die or the transceiver die. There are also signals bonded in-between the two dies.
6.1
Signal Details
This section provides the naming and functional description of the internal and external signals.
5. I/O
Multiplexing and Considerations
describes the routing of these signals between the MCU core and
transceiver subsystem and to the external package pins.
Table 6-1.ꢀSignal Descriptions List
Signal Name
Function
Type
Analog Comparators (AC)
AIN<3:0>
AC analog inputs
AC comparator outputs
Analog
Digital
CMP<1:0>
Analog Digital Converter (ADC)
AIN<19:0>
VREFB
ADC analog inputs
Analog
Analog
ADC voltage external reference B
External Interrupt Controller (EIC)
EXTINT<15:0>
NMI
External interrupts inputs
External non-maskable interrupt input
Digital
Digital
Reset Controller (RSTC)
EXTWAKE<7:0> External
wake-up inputs
Generic Clock Generator (GCLK)
Digital
GCLK_IO<7:0> Generic
clock (source clock inputs or generic clock generator output)
Digital
Custom Control Logic (CCL)
IN<8:0>
Logic inputs
Digital
Digital
OUT<2:0>
Logic outputs
Supply Controller (SUPC)
VBAT
External battery supply inputs
Analog
Digital
Digital
PSOK
Main power supply OK input
Logic outputs
OUT<1:0>
Power Manager (PM)
RESETN
Active low Reset input
Digital
Serial Communication Interface (SERCOMx)
DS70005356C-page 18
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Signal Description
………..continued
Signal Name
Function
Type
PAD<3:0>
SERCOM Input/Output pads
Digital
Oscillators Control (OSCCTRL)
XIN
Crystal or external clock input
Crystal output
Analog/Digital
Analog
XOUT
32KHz Oscillators Control (OSC32KCTRL)
XIN32
32KHz crystal or external clock input
32KHz crystal output
Analog/Digital
Analog
XOUT32
Timer Counter (TCx)
WO<1:0>
Waveform outputs
Digital
Digital
Timer Counter (TCCx)
WO<7:0>
Waveform outputs
General Purpose I/O (PORT)
PA01-PA00
PA09-PA04
PA25-PA22
PA28-PA27
PA03-PB02
PA23-PB22
Parallel I/O controller I/O Port A
Digital
Digital
Digital
Digital
Digital
Digital
Parallel I/O controller I/O Port A
Parallel I/O controller I/O Port A
Parallel I/O controller I/O Port A
Parallel I/O controller I/O Port B
Parallel I/O controller I/O Port B
Universal Serial Bus (USB)
DP
DP for USB (SAM R34 only)
DM for USB (SAM R34 only)
Digital
Digital
DM
External RF Signals
RF_XTB
RF_XTA
VR_DIG
VBAT_ANA
VR_ANA
RFI_LF
XTAL connection
OSC
XTAL connection or TCXO input
OSC
Regulated supply voltage for digital blocks
Supply voltage for analog circuitry
Regulated supply voltage for analog circuitry
RF input for bands 2 and 3
Reg Output
Analog Power
Reg Output
RF Input
RFO_LF
PA_BOOST
VR_PA
RF output for bands 2 and 3
RF Output
RF Output
Reg Output
Optional high-power PA output, all frequency bands
Regulated supply voltage for the PA
DS70005356C-page 19
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Signal Description
………..continued
Signal Name
Function
Type
VBAT_RF
RFO_HF
VBAT_DIG
RXTX
Supply voltage for RF blocks
RF output for band 1
RF Power
RF Output
Digital Power
Digital I/O
RF Input
Supply voltage for digital blocks
RX/TX switch control: High in TX
RF input for band 1
RFI_HF
Internal Interconnect Signals
DIO0
Digital I/O, software configured
I/O
DIO1/DCLK
DIO2/DATA
DIO3
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
SPI clock input
I/O
I/O
I/O
DIO4
I/O
DIO5
I/O
SCLK
Input
Output
Input
Input
I/O
MISO
SPI data output
MOSI
SPI data input
SEL
SPI chip select input
RF_RST
Reset trigger input
DS70005356C-page 20
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
7.
Processor and Architecture
7.1
Cortex M0+ Processor
The SAM R34/R35 contains an ATSAML21 Die Revision C ARM Cortex-M0+ processor. The processor is
®
based on the ARMv6 Architecture and Thumb
-2 ISA. The Cortex-M0+ is 100% instruction set
compatible with its predecessor, the Cortex-M0 core, and upward compatible to Cortex-M3 and M4 cores.
7.1.1
Cortex M0+ Configuration
Table 7-1.ꢀCortex M0+ Configuration in SAM R34/R35
Features
Cortex M0+ options
External interrupts 0-32
Little-endian or big-endian
Present or absent
0, 1, 2
SAM R34/R35 configuration
Interrupts
29
Data endianness
SysTick timer
Little-endian
Present
2
Number of watchpoint
comparators
Number of breakpoint
comparators
0, 1, 2, 3, 4
4
Halting debug support
Multiplier
Present or absent
Fast or small
Present
Fast (single cycle)
Present
Single-cycle I/O port
Present or absent
Supported or not supported
Present or absent
Present or absent
Wake-up interrupt controller
Vector
T
a
ble Offset Register
Unprivileged/Privileged support
Not supported
Present
Absent – All software run in
privileged mode only
Memory Protection Unit
Reset all registers
Not present or 8-region
Present or absent
Not present
Absent
Instruction fetch width
16-bit only or mostly 32-bit
32-bit
The ARM Cortex-M0+ core has two bus interfaces:
• Single
32-bit AMBA-3 AHB-Lite system interface that provides connections to peripherals and all
system memory including Flash memory and RAM
• Single
32-bit I/O port bus interfacing to the PORT with 1-cycle loads and stores
7.1.1.1 Cortex
M0+ Peripherals
• System
Control Space (SCS)
– The
processor provides debug through registers in the SCS. Refer to the Cortex-M0+
T
e
chnical
• Nested
Vectored Interrupt Controller (NVIC)
DS70005356C-page 21
Datasheet
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2019 Microchip
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e
chnology Inc.
SAM R34/R35
Processor and Architecture
– External
interrupt signals connect to the NVIC, and the NVIC prioritizes the interrupts. Software
can set the priority of each interrupt. The NVIC and the Cortex-M0+ processor core are closely
coupled, providing low latency interrupt processing and efficient processing of late arriving
Note:ꢀ
When the CPU frequency is much higher than the APB frequency it is recommended to
insert a memory read barrier after each CPU write to registers mapped on the APB. Failing to do
so in such conditions may lead to unexpected behavior such as re-entering a peripheral interrupt
handler just after leaving it.
• System
Timer (SysTick)
– The
System Timer is a 24-bit timer clocked by CLK_CPU that extends the functionality of both
the processor and the NVIC. Refer to the Cortex-M0+
T
e
chnical Reference Manual for details
• System
Control Block (SCB)
– The
System Control Block provides system implementation information, and system control. This
includes configuration, control, and reporting of the system exceptions. Refer to the Cortex-M0+
• Micro
Trace Buffer (MTB)
– The
CoreSight MTB-M0+ (MTB) provides a simple execution trace capability to the Cortex-M0+
processor. Refer to section
MTB-Micro Trace Buffer
and the CoreSight MTB-M0+
T
e
chnical
Related Links
7.2 Nested
Vector Interrupt Controller
7.1.1.2 Cortex
M0+ Address Map
Table 7-2.ꢀCortex-M0+ Address Map
Address
Peripheral
0xE000E000
System Control Space (SCS)
System Timer (SysTick)
0xE000E010
0xE000E100
Nested Vectored Interrupt Controller (NVIC)
System Control Block (SCB)
Micro Trace Buffer (MTB)
0xE000ED00
0x41006000
7.1.1.3 I/O
Interface
™
®
The device allows direct access to PORT registers. Accesses to the AMBA
AHB-Lite and
the single
cycle I/O interface can be made concurrently, so the Cortex M0+ processor can fetch the next instructions
while accessing the I/Os. This enables single cycle I/O access to be sustained for as long as necessary.
7.2
Nested Vector Interrupt Controller
7.2.1
Overview
The Nested Vectored Interrupt Controller (NVIC) in the SAM R34/R35 supports 32 interrupt lines with four
different priority levels. For more details, refer to the Cortex-M0+
T
e
chnical Reference Manual (
http://
DS70005356C-page 22
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
7.2.2
Interrupt Line Mapping
Each of the 23 interrupt lines is connected to one peripheral instance, as shown in the table below. Each
peripheral can have one or more interrupt flags, located in the peripheral’s Interrupt Flag Status and Clear
(INTFLAG) register.
An interrupt flag is set when the interrupt condition occurs. Each interrupt in the peripheral can be
individually enabled by writing a 1 to the corresponding bit in the peripheral’s Interrupt Enable Set
(INTENSET) register, and disabled by writing 1 to the corresponding bit in the peripheral’s Interrupt
Enable Clear (INTENCLR) register.
An interrupt request is generated from the peripheral when the interrupt flag is set and the corresponding
interrupt is enabled.
The interrupt requests for one peripheral are ORed together on system level, generating one interrupt
request for each peripheral. An interrupt request will set the corresponding interrupt pending bit in the
NVIC interrupt pending registers (SETPEND/CLRPEND bits in ISPR/ICPR).
For the NVIC to activate the interrupt, it must be enabled in the NVIC interrupt enable register (SETENA/
CLRENA bits in ISER/ICER). The NVIC interrupt priority registers IPR0-IPR7 provide a priority field for
each interrupt.
Table 7-3.ꢀInterrupt Line Mapping
Peripheral Source
NVIC Line
EIC NMI – External Interrupt Controller
PM – Power Manager
NMI
0
MCLK – Main Clock
OSCCTRL – Oscillators Controller
OSC32KCTRL – 32KHz Oscillators Controller
SUPC – Supply Controller
PAC – Protecion Access Controller
WDT – Watchdog Timer
1
RTC – Real Time Counter
2
EIC – External Interrupt Controller
3
NVMCTRL – Non-Volatile Memory Controller
DMAC – Direct Memory Access Controller
USB – Universal Serial Bus
4
5
6
EVSYS – Event System
7
SERCOM0 – Serial Communication Interface 0
SERCOM1 – Serial Communication Interface 1
SERCOM2 – Serial Communication Interface 2
SERCOM3 – Serial Communication Interface 3
SERCOM4 – Serial Communication Interface 4
8
9
10
11
12
DS70005356C-page 23
Datasheet
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chnology Inc.
SAM R34/R35
Processor and Architecture
………..continued
Peripheral Source
NVIC Line
SERCOM5 – Serial Communication Interface 5
TCC0 – Timer Counter for Control 0
TCC1 – Timer Counter for Control 1
TCC2 – Timer Counter for Control 2
TC0 – Timer Counter 0
13
14
15
16
17
18
19
20
21
TC1 – Timer Counter 1
TC4 – Timer Counter 4
ADC – Analog-to-Digital Converter
AC – Analog Comparator
7.3
Micro Trace Buffer
7.3.1
Features
• Program
flow tracing for the Cortex-M0+ processor
• MTB
SRAM can be used for both trace and general purpose storage by the processor
• The
position and size of the trace buffer in SRAM is configurable by software
• CoreSight
compliant
7.3.2
Overview
When enabled, the MTB records the changes in program flow that are reported by the Cortex-M0+
processor over the execution trace interface. This interface is shared between the Cortex-M0+ processor
and the CoreSight MTB-M0+. The information is stored by the MTB in the SRAM as trace packets. An off-
chip debugger can extract the trace information using the Debug Access Port to read the trace
information from the SRAM. The debugger can then reconstruct the program flow from this information.
The MTB stores trace information into the SRAM and gives the processor access to the SRAM
simultaneously. The MTB ensures that trace write accesses have priority over processor accesses.
An execution trace packet consists of a pair of 32-bit words that the MTB generates when it detects a
non-sequential change of the program pounter (PC) value. A non-sequential PC change can occur during
branch instructions or during exception entry. See the CoreSight MTB-M0+
T
e
chnical Reference Manual
for more details on the MTB execution trace packet format.
Tracing is enabled when the MASTER.EN bit in the Master Trace Control Register is 1. There are various
ways to set the bit to 1 to start tracing, or to 0 to stop tracing. See the CoreSight Cortex-M0+
T
e
chnical
Reference Manual for more details on the Trace start and stop and for a detailed description of the MTB’s
MASTER register. The MTB can be programmed to stop tracing automatically when the memory fills to a
specified watermark level or to start or stop tracing by writing directly to the MASTER.EN bit. If the
watermark mechanism is not being used and the trace buffer overflows, then the buffer wraps around
overwriting previous trace packets.
The base address of the MTB registers is 0x41006000; this address is also written in the CoreSight ROM
T
a
ble. The offset of each register from the base address is fixed and as defined by the CoreSight MTB-
DS70005356C-page 24
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
M0+
T
e
chnical Reference Manual. The MTB has four programmable registers to control the behavior of
the trace features:
• POSITION:
Contains the trace write pointer and the wrap bit
• MASTER:
Contains the main trace enable bit and other trace control fields
• FLOW:
Contains the WATERMARK address and the AUTOSTOP and AUTOHALT control bits
• BASE:
Indicates where the SRAM is located in the processor memory map. This register is provided
to enable auto discovery of the MTB SRAM location by a debug agent
See the CoreSight MTB-M0+
T
e
chnical Reference Manual for a detailed description of these registers.
7.4
High-Speed Bus System
7.4.1
Features
High-Speed Bus Matrix has the following features:
• Symmetric
crossbar bus switch implementation
• Allows
concurrent accesses from different masters to different slaves
• 32-bit
data bus
• Operation
at a one-to-one clock frequency with the bus masters
H2LBRIDGE has the following features:
• LP
clock division support
• Write:
Posted-write FIFO of 3 words, no bus stall until it is full
• Write:
1 cycle bus stall when full when LP clock is not divided
• 2
stall cycles on read when LP clock is not divided
• Ultra-Low
Latency mode:
– Suitable
when the HS clock frequency is not above half the maximum device clock frequency
– Removes
all intrinsic bridge stall cycles (except those needed for LP clock ratio adaptation)
– Enabled
by writing a ‘1’ in 0x41008120 using a 32-bit write access
L2HBRIDGE has the following features:
• LP
clock division support
• Write:
Posted-write FIFO of 1 word, no bus stall until it is full
• Write:
1 cycle bus stall when full when LP clock is not divided
• 2
stall cycles on read when LP clock is not divided
• Ultra-Low
Latency mode:
– Suitable
when the HS clock frequency is not above half the maximum device clock frequency
– Removes
all intrinsic bridge stall cycles (except those needed for LP clock ratio adaptation)
– Enabled
by writing a ‘1’ in 0x41008120 using a 32-bit write access
Figure 7-1.ꢀHigh-Speed Bus System Components
M
M
S
M
M
M
S
H2LBRIDGEM
L2HBRIDGES
H2LBRIDGES
L2HBRIDGES
S
H2LBRIDGE
L2HBRIDGE
HMATRIXLP
HMATRIXHS
M
S
S
S
S S
S
S S S S S S
DS70005356C-page 25
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
7.4.2
Configuration
Figure 7-2.ꢀMaster-Slave Relations High-Speed Bus Matrix
High-Speed Bus SLAVES
0
1
2
3
4
CM0+
DSU
0
1
2
L2HBRIDGEM
Figure 7-3.ꢀMaster-Slave Relations Low-Power Bus Matrix
Low-Power Bus SLAVES
0
1
2
3
5
7
8
9
H2LBRIDGEM 0
DMAC
2
Table 7-4.ꢀHigh-Speed Bus Matrix Masters
High-Speed Bus Matrix Masters
CM0+ – Cortex M0+ Processor
Master ID
0
1
DSU – Device Service Unit
DS70005356C-page 26
Datasheet
©
2019 Microchip
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e
chnology Inc.
SAM R34/R35
Processor and Architecture
………..continued
High-Speed Bus Matrix Masters
Master ID
L2HBRIDGEM – Low-Power to High-Speed bus
matrix AHB to AHB bridge
2
Table 7-5.ꢀHigh-Speed Bus Matrix Slaves
High-Speed Bus Matrix Slaves
Internal Flash Memory
Slave ID
0
1
2
3
4
HS SRAM Port 0 – CM0+ Access
HS SRAM Port 1 – DSU Access
AHB-APB Bridge B
H2LBRIDGES – High-Speed to Low-Power bus
matrix AHB to AHB bridge
Table 7-6.ꢀLow-Power Bus Matrix Masters
Low-Power Bus Matrix Masters
Master ID
H2LBRIDGEM – High-Speed to Low-Power bus
matrix AHB to AHB bridge
0
DMAC – Direct Memory Access Controller – Data
Access
2
Table 7-7.ꢀLow-Power Bus Matrix Slaves
Low-Power Bus Matrix Slaves
AHB-APB Bridge A
Slave ID
0
1
2
3
5
7
8
AHB-APB Bridge C
AHB-APB Bridge D
AHB-APB Bridge E
LP SRAM Port 2- H2LBRIDGEM access
LP SRAM Port 1- DMAC access
L2HBRIDGES – Low-Power to High-Speed bus
matrix AHB to AHB bridge
HS SRAM Port 2- HMATRIXLP access
9
7.4.3
SRAM Quality of Service
To
e
nsure that masters with latency requirements get sufficient priority when accessing RAM, priority
levels can be assigned to the masters for different types of access.
The Quality of Service (QoS) level is independently selected for each master accessing the RAM. For any
access to the RAM, the RAM also receives the QoS level. The QoS levels and their corresponding bit
values for the QoS level configuration are shown in the following table.
DS70005356C-page 27
Datasheet
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2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
Table 7-8.ꢀQuality of Service
Value
Name
Description
0x0
DISABLE
Background (no sensitive
operation)
0x1
0x2
0x3
LOW
Sensitive Bandwidth
Sensitive Latency
Critical Latency
MEDIUM
HIGH
If a master is configured with QoS level DISABLE (0x0) or LOW (0x1) there will be a minimum latency of
one cycle for the RAM access.
The priority order for concurrent accesses are decided by two factors. First, the QoS level for the master
and second, a static priority given by the port ID. The lowest port ID has the highest static priority. See the
tables below for details.
The MTB has a fixed QoS level HIGH (0x3).
The CPU QoS level can be written/read, using 32-bit access only, at address 0x41008114 bits [1:0]. Its
reset value is 0x3.
Refer to different master QOSCTRL registers for configuring QoS for the other masters (USB, DMAC).
Table 7-9.ꢀHS SRAM Port Connections QoS
HS SRAM Port Connection
Port ID
Connection Type
QoS
default QoS
MTB – Micro Trace Buffer
USB – Universal Serial Bus
4
3
2
Direct
STATIC-3
0x3
0x3
0x2
Direct
IP-QOSCTRL
HMATRIXLP – Low-Power
Bus Matrix
Bus Matrix
0x44000934
(1)
, bits[1:0]
DSU – Device Service Unit
1
0
Bus Matrix
Bus Matrix
0x4100201C
(1)
0x2
0x3
CM0+ – Cortex M0+
Processor
0x41008114
(1)
, bits[1:0]
Note:ꢀ
1. Using
32-bit access only.
Table 7-10.ꢀLP SRAM Port Connections QoS
LP SRAM Port Connection
Port ID
Connection Type
QoS
default QoS
DMAC – Direct Memory
Access Controller – Write-
Back Access
5, 6
Direct
IP-QOSCTRL.WRBQOS
0x2
DMAC – Direct Memory
Access Controller – Fetch
Access
3, 4
Direct
IP-QOSCTRL.FQOS
0x2
DS70005356C-page 28
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Processor and Architecture
………..continued
LP SRAM Port Connection
Port ID
Connection Type
QoS
default QoS
H2LBRIDGEM – HS to LP
bus matrix AHB to AHB
bridge
2
Bus Matrix
0x44000924
(1)
, bits[1:0]
0x2
DMAC – Direct Memory
Access Controller – Data
Access
1
Bus Matrix
IP-QOSCTRL.DQOS
0x2
Note:ꢀ
1. Using
32-bit access only.
DS70005356C-page 29
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Application Schematic Introduction
8.
Application Schematic Introduction
The SAM R34/R35 application schematic has to provide the environment for both integrated circuits
inside the package. The microcontroller as well as the radio have integrated LDOs to provide the required
core voltages.
T
o
a
chieve the full radio performance, the application layout has to take the noise
decoupling in-between the analog radio part and the digital processor and signal processing power
domains into account.
8.1
SAM R34/R35 Basic Application Schematic
The following application schematic shows the minimum circuit elements required for the SAM R34/R35
system. In this schematic, both the high-power PA_BOOST and high-efficiency RFO_HF transmitter
configurations are populated. Some applications may require only one transmitter configuration.
For unused pins, the default state of the pins will give the lowest current leakage. Thus, there is no need
to perform any configuration of the unused pins in order to lower the power consumption.
DS70005356C-page 30
Datasheet
©
2019 Microchip
T
e
chnology Inc.
Figure 8-1.ꢀSAM R34/R35 Basic Application Schematic
rotatethispage90
VDD
U300
VDD
G4
A8
A7
C2
H8
H3
C1
VDDIO1
VDDIO2
VDDIN
VBAT_DIG
VBAT_ANA
VBAT_RF
VDDANA
32 MHz TCXO
VDDANA
DNP
VDDANA
A6
A5
H4
H2
D1
L301
LQH3NPN100MJ0
C303
100nF
C304
100nF
C307
100nF
C308
100nF
VSW
VR_DIG
VR_ANA
VR_PA
XTA
VDDCORE
C330
33pF
C311
100nF
C312
100nF
C313
100nF
C314
100nF
C340
4.7pF
C315
100nF
GND
GND
GND
GND
C316
100nF
B3
E2
B5
B7
D4
D6
A2
B2
E1
F2
G2
G3
G5
G6
G7
H5
C321
DNF
C300
DNF
GNDANA
GNDANA
GND
GND
GND
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
GND_RF
VDD
DNP
GND
DNP
GND
XC1
TYETBCSANF-32.000000
GND
GND
GND
GND
GND
GND
GND
GND
GND
VR_PA
B6
RESET
RESET
GND
A3
A4
D3
C4
E3
F3
F4
F5
F6
F8
G8
F7
E6
E7
E8
D8
D7
B8
C8
E4
C6
C5
D5
B4
C3
E5
C7
PA00_XIN32
PA01_XOUT32
PA00
PA01
PA04
PA05
PA06
PA07
PA08
PA09
PA13
PA14
PA15
PA16
PA17
PA18
PA19
PA22
PA23
PA24
PA25
PA27
PA28
PA30
PA31
PB02
PB03
PB22
PB23
PA04_S0_UART_TX
PA05_S0_UART_RX
50Ohm
i
VDD
L300
BLM15AG121SN1D
B1
A1
F1
G1
H1
D2
RFO_HF
RFI_HF
VDDANA
RFSW_PWR
RFO_HF
RFI_HF
PA_BOOST
RFO_LF
RFI_LF
RXTX
GND
50Ohm
i
C306
10uF
RFSW_PWR
BAND_SEL
C320
100nF
50Ohm
i
PA_BOOST
GND
GND
TXRX
XTA
32 kHz Crystal
PA30_SWDCLK
PA31_SWDIO
Y301
H6
H7
PA01_XOUT32
PA00_XIN32
XTA
XTB
ABS05-32.768KHZ-9-T
C309
C310
10pF
10pF
SAMR34J18B
ANTENNA
SMA Antenna connector
GND
GND
GND
C904
50Ohm
DNP
i
1
J901
DNF
50Ohm
i
50Ohm
i
50Ohm
50Ohm
i
50Ohm
i
SM
A
E
dg
e
M
ount
C900
i
L900
2.2nH
L902
L901
10nH
PA_BOOST
Cortex Debug Connector
10nH
GND
1
8
p
F
C901
3.9pF
C917
3.3pF
C902
5.6pF
C903
3.3pF
L903
33nH
GND
GND
VDD
J303
1
3
5
7
9
2
4
6
8
GND
VREF
PA31_SWDIO
PA30_SWDCLK
GND
GND
GND
U900
SKY13373-460LF
VR_PA
50Ohm
i
50Ohm
i
50Ohm
i
10
C905
RESET
L904
1
9
RFI_HF
J1
J2
C906
DNF
C907
4.7nF
DNP
HEADER 2×5
1310-1205SNS073R1
10nH
GND
2
8
L905
33nH
47pF
GND
GND
GND
C908
2.7pF
3
7
C909
DNP
DNF
C915
DNP
DNF
J3
GND
GND
GND
GND
50Ohm
i
50Ohm
i
50Ohm
C910
50Ohm
50Ohm
50Ohm
i
GND
i
i
i
L906
L907
L909
10nH
RFO_HF
V1 V2
RF Switch State
11nH
10nH
RFSW_PWR
22pF
0
1
0
1
0
0
1
1
Shutdown
C911
3.9pF
C912
8.2pF
C913
5.6pF
C916
3.3pF
RFC to J2 (RFI_HF)
RFC to J1 (PA_BOOST)
RFC to J3 (RFO_HF)
C914
1 nF
GND
GND
GND
GND
GND
BAND_SEL
TXRX
SAM R34/R35
Application Schematic Introduction
8.2
SAM R34/R35 Bill of Materials
Table 8-1.ꢀBill of Materials for SAM R34/R35
Sl. No.
Designator
Quantity Value
Manufacturer
MPN
C0201C104K9PACTU
Description
1
C303, C304, C307,
11
100nF
KEMET
CAP CER 0.1UF 6.3V 10% X5R 0201
C308, C311, C312,
C313, C314, C315,
C316, C320
2
3
4
C306
1
2
1
10uF
10pF
33pF
Murata
GRM155R60J106ME15
C0603C0G1E100C
250R05L330GV4T
Ceramic capacitor, SMD 0402, X5R, 6.3V, 20%
CAP CER 10PF 25V C0G 0201
C309, C310
C330
TDK Corporation
Johanson
T
e
chnology
Inc.
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,
+/-2%
5
C340
1
4.7pF
Johanson
T
e
chnology
Inc.
250R05L4R7BV4T
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,
+/-0.1pF
6
7
8
9
C900
1
2
2
3
18pF
3.9pF
5.6pF
3.3pF
Murata
Murata
Murata
GRM0335C1H180GA01D CAP
CER 18PF 50V C0G/NP0 0201 +/- 2%
GRM0335C1H3R9BA01D CAP
CER 3.9PF 50V C0G/NP0 0201, +/-0.1pF
GRM0335C1E5R6BA01D CAP
CER 5.6PF 25V 0201
C901, C911
C902, C913
C903, C916, C917
Johanson
T
e
chnology
Inc.
250R05L3R3BV4T
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,
+/-0.1pF
10
11
12
13
14
C905
C907
C908
C910
C912
1
1
1
1
1
47pF
4.7nF
2.7pF
22pF
8.2pF
1nF
Johanson
T
e
chnology
Inc.
250R05L470GV4T
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,
+/-2%
Murata
GRM033R71A472KA01D Ceramic
capacitor, SMD 0201, X7R, 10V,
+/-10%
Murata
GJM0335C1E2R7BB01E Ceramic
capacitor, SMD 0201, C0G/NP0, 25V,
+/-0.1pF
Johanson
T
e
chnology
Inc.
250R05L220GV4T
Ceramic capacitor, SMD 0201, C0G/NP0, 25V,
+/-2%
Johanson
T
e
chnology
Inc.
250R05L8R2CV4T
CAP CER 8.2PF 25V NP0 0201 ±0.25pF
15
16
C914
J303
1
1
Murata
GRM033R71C102KA01D Ceramic
capacitor, SMD 0201, X7R, 16V, 0.1
1310-1205SNS073R1 WCON
Hardware
Electronics Co., Ltd
1310-1205SNS073R1
2×5 pin header, 1.27mm pitch, THM
17
18
19
20
21
22
23
J901
L300
L900
1
1
1
4
2
1
1
SMA Edge Mount
Cinch Connectivity
Solutions Johnson
142-0771-831
Cinch Connectivity Solutions Johnson 50 Ohms,
SMA Edge Mount Jack Receptacle
BLM15AG121SN1D
Murata
Murata
Murata
BLM15AG121SN1D
LQW15AN2N2C10D
LQP03TN10NH02D
L-05B33NJV6T
Chip Bead, 120ohm@100Mhz, 0.55A, 0402,
Rdc 0.19ohm
2.2nH
10nH
33nH
10nH
11nH
FIXED IND 2.2NH 1A 27 MOHM SMD, +-0.2nH,
0201
L901, L902, L907,
L909
FIXED IND 10NH 250MA 700 MOHM, +-3%,
0201
L903, L905
Johanson
T
e
chnology
Inc.
RF Inductor, 33nH, +/-5%, Irms=0.2A,
Q=5@100Mhz, DCR=2.3(Max), SMD, 0201
L904
TDK Corporation
MLK0603L10NJT000
LQP03HQ11NH02
RF Inductor, 10nH, +/-5%, Irms=0.2A,
Q=6@300Mhz, DCR=0.8(Max), SMD, 0201
L906
Murata
FIXED IND 11NH 300MA 500 MOHM 0201
+/-3%
24
25
R300
U300
1
1
100k
ASJ
CR10-1003-FK
Thick film resistor, SMD 0402, 1/16W, 1%
SAMR34 BGA-64
SAMR34J18B
Microchip
T
e
chnology
Inc.
ATSAMR34J18BT-I/7JX
DS70005356C-page 32
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Application Schematic Introduction
………..continued
Sl. No.
Designator
Quantity Value
Manufacturer
Skyworks Solutions
T
a
itien
MPN
SKY13373-460LF
Description
26
27
U900
XC1
1
1
SKY13373-460LF
0.1-6.0GHZ SPT3 SWITCH
32MHz TCXO
TYETBCSANF-32.000000 32MHz
TCXO, 2.8 ~ 3.3
V
,
C
lipped sine wave
10kOhm/10p
F
, 2 x
1
.6 mm SMD
28
Y301
1
ABS05-32.768KHZ-9-T
—
—
CRYSTAL 32.768KHz 9pF SMD ABS05
DS70005356C-page 33
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Transceiver Circuit Description
9.
Transceiver Circuit Description
Note:ꢀ
The SAM R34/R35 incorporates a LoRa transceiver.
The integrated Sub-GHz transceiver supports LoRa technology spread spectrum modulation, combining
ultra-long range communications and high interference immunity with extremely low current consumption.
Receive sensitivities of over -148 dBm can be achieved in narrowband modes, and -136 dBm in
LoRaWAN protocol compliant modes, using a low cost crystal and bill of materials.
The transmit section offers two integrated power amplifiers. The highly efficient RFO port delivers up to
+13 dBm for European regions and battery conservation. The high powered PA_BOOST port delivers a
regulated output of +17 dBm with low EMI across the entire working voltage range or, up to +20 dBm of
raw RF power with high-voltage supplies. This combination of high power and high RX sensitivity yields
industry leading link budget, making it ideal for any application requiring long range low-data-rate
communications. LoRa technology also provides significant advantages in both blocking and selectivity
over conventional modulation techniques, solving the traditional design compromise between range,
interference robustness and energy consumption. For maximum flexibility, the user may decide on the
spread spectrum modulation bandwidth (BW), spreading factor (SF), and forward error correction rate
(CR). Another benefit of the spread spectrum modulation is that each spreading factor is orthogonal, thus
multiple transmitted signals can occupy the same channel without interfering.
The SAM R34/R35 also supports high performance (G)FSK, (G)MSK, and OOK modes for systems
including WMBus and IEEE802.15.4g.
This transceiver offers bandwidth options ranging from 7.8 kHz to 500 kHz with spreading factors ranging
from 6 to 12, and covering all available frequency bands from 137 to 1020 MHz.
9.1
Transceiver Pin Description
Table 9-1.ꢀDescription of Transceiver Signals Available Outside the Package
Name
Type
I
Description
RFI_LF
RFO_LF
VR_ANA
VBAT_ANA
VR_DIG
VBAT_DIG
XTA
RF Input for Bands 2 and 3
RF Output for Bands 2 and 3
Regulated Supply Voltage for Analog Circuitry
Supply Voltage for Analog Circuitry
Regulated Supply Voltage for Digital Blocks
Supply Voltage for Digital Blocks
XTAL Connection or TCXO Input
XTAL Connection
O
Supply
Supply
Supply
Supply
I/O
XTB
I/O
RXTX
O
RX/TX Switch Control: High in TX
RF Input for Band 1
RFI_HF
RFO_HF
VBAT_RF
I
O
RF Output for Band 1
Supply
Supply Voltage for RF Blocks
DS70005356C-page 34
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Transceiver Circuit Description
………..continued
Name
Type
Supply
O
Description
VR_PA
Restricted Supply for the PA
PA_BOOST
Optional High Power PA Output, All Frequency Bands
9.2
Transceiver Validation
The SAM R34 transceiver has been extensively tested using LoRa modulation and FSK for European
and North American regions.
Validation of the SAM R34 device was performed at frequencies typically used in LoRa applications. The
test boards exhibited regulatory compliance for European and North American regions. ETSI 868MHz
ISM band was tested using the RFO_HF port. FCC 902-928MHz ISM band was tested using both the
RFO_HF and PA_BOOST ports. These configurations use the transceiver’s synthesizer in band 1.
At the time of publication of this data sheet, the RFO_LF port or SAM R34 is known to be functional but
has not been validated. RFO_LF transmits on 137-175MHz and 410-525MHz bands (synthesizer band 2
and band 3).
DS70005356C-page 35
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Microcontroller Interface
10.
Microcontroller Interface
This section describes the transceiver to microcontroller interface. The interface is comprised of a slave
SPI and additional control signals. This interface is connected to a SAM L21 master interface as shown
below. The SERCOM4 and GPIO signals dedicated to the CPU-TRX interface are not externally exposed
and may not be used for any other purposes.
Do not use CPU OFF mode. The internal SPI connections do not have pull-up resistors and the
CAUTION
CPU OFF mode puts the SPI bus in a high-impedance state. The resulting metastable signals
may cause unpredictable transceiver behavior and increase the current consumption.
Figure 10-1.ꢀMicrocontroller to Transceiver Interface
Transceiver
SPI SLAVE
SAML21
SERCOM4
PB31
PB30
PC19
PC18
/SEL
MOSI
MISO
SCK
PAD2
PAD0
PAD3
EXTERNAL
INTERRUPT
CONTROLLER
PB17
DIO3
EXTINT(1)
EXTINT (10)
EXTINT (0)
EXTINT (0)
EXTINT (11)
EXTINT (12)
PA10
PB00
DIO4
DIO5
PB16
PA11
PA12
DIO0
CONTROL
LOGIC
DIO1/DCLK
DIO2/DATA
SERCOM2
PAD0
PAD3
PB15
nRST
PORT
The SPI is used for register, Frame Buffer, and SRAM access. The additional control signals are
connected to the GPIO/IRQ interface of the microcontroller. The table below introduces the radio
transceiver I/O signals and their functionalities.
Table 10-1.ꢀMicrocontroller Interface Signal Description
TRX Signal
/SEL
CPU Signal Name
PB31
Description
SPI select signal, active-low
SPI data (master output slave input) signal
SPI data (master input slave output) signal
SPI clock signal
MOSI
PB30
MISO
PC19
SCLK
PC18
nRST
PB15
Transceiver Reset signal, Active-low
DS70005356C-page 36
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Microcontroller Interface
………..continued
TRX Signal
CPU Signal Name
Description
DIO0
DIO1
DIO2
DIO3
DIO4
DIO5
PB16
PA11
PA12
PB17
PA10
PB00
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
Digital I/O, software configured
DS70005356C-page 37
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
11.
Electrical Characteristics
Note:ꢀ
All the specifications are typical (TYP), unless otherwise stated.
11.1
Absolute Maximum Ratings
Stresses beyond those listed in following table may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or other conditions beyond those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Table 11-1.ꢀAbsolute Maximum Ratings
Symbol Description
Min.
Max.
Units
V
DD
V
PIN
Power supply voltage
0
3.8
V
Pin voltage with respect to GND and V
DD
V
DD MAX
=3.6V
GND-0.6V VDD+0.6V V
P
RF
Input RF level
–
+10
150
260
dBm
°C
T
storage
Storage temperature
-50
–
T
LEAD
T=10s
°C
(soldering profile compliant with IPC/JEDEC J STD 020B)
This device is sensitive to electrostatic discharges (ESD). Improper handling may lead to
permanent performance degradation or malfunctioning. Handle the device following best
practice ESD protection rules: Be aware that the human body can accumulate charges large
enough to impair functionality or destroy the device.
CAUTION
11.2
General Operating Conditions
The device must operate within the ratings listed in the following table in order for all other electrical
characteristics and typical characteristics of the device to be valid.
For unused pins, the default state of the pins gives the lowest current leakage. Thus, specific
configuration is not required for the unused pins in order to lower the power consumption.
Table 11-2.ꢀGeneral Operating Conditions
Symbol
V
DDIN
V
DDIO
V
DDANA
T
A
Description
Min.
1.8
1.8
1.8
-40
Typ.
3.3
3.3
3.3
25
Max.
3.63
3.63
3.63
85
Units
V
Power supply voltage
IO Supply Voltage
Analog supply voltage
T
e
mperature range
V
V
°C
DS70005356C-page 38
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
………..continued
Symbol
Description
Min.
Typ.
Max.
Units
T
J
Junction temperature
–
–
100
°C
In debugger Cold-Plugging mode, NVM erase operations are not protected by the BOD33 and
BOD12. NVM erase operation at supply voltages below specified minimum can cause
corruption of NVM areas that are mandatory for correct device behavior.
CAUTION
11.3
Performance Characteristics
The following data shows SAM R34/R35 performance as a combined system including both the SAML21
and the transceiver under the following conditions:
• Modulation
= LoRa
• VCC
= 3.3 VDC
•
T
e
mperature
= 25°C
• F
RF_XTA
= 32.000000 MHz +/- 1 ppm (TCXO)
• DFLL
= 48 MHz
• BW
= 125 kHz
• SF
= 12
• EC
= 4/6
• PER
= 1%
• CRC
= ENABLED
• Payload
= 64 Bytes
• Preamble
= 12 symbols
• Matched
Impedance
Estimates for ACTIVE state of the SAML21 are derived using the CoreMark benchmarking algorithm, a
48 MHz DFLL clock and 3.3 VDC supply. These are intended to show a conservative estimate of power
consumption. Results are related to CPU activity, clock speed and temperature and may be improved
with optimization.
11.3.1
Method of Derivation
Combined specifications in this data sheet are derived from the published data sheets of the components.
See Reference Documents [1] and [5]. For example, the
Line Current in TX Mode
entry for RFO_HF +13
dBm is 32.5 mA. This is calculated using the IDDT_L current in
LoRa Receiver Specification
T
a
ble
10 of
[5] and the
Active Current Consumption
T
a
ble
46-7 of [1] for the operational conditions shown below.
Table 11-3.ꢀTRX TX Current Derivation
Condition
Bandwidth
Carrier Frequency
CRC
Value
125
Unit
kHz
868
MHz
ENABLED
DS70005356C-page 39
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
………..continued
Condition
Value
Unit
Error Correction Code
Fxosc
4/6
32
MHz
Impedances
MATCHED
Packet Error rate
Payload Length
Preamble Length
RF Output Power
RF Port
1
%
64
Bytes
Symbols
dBm
12
+13
RFO_HF
12
Spreading Factor
Supply Voltage
T
e
mperature
3.3
25
VDC
Celsius
mA (TYP)
IDDT_L
28
Table 11-4.ꢀTRX RX Current Derivation
Condition
Value
125
Unit
kHz
Bandwidth
Carrier Frequency
CRC
868
MHz
ENABLED
4/6
Error Correction Code
Fxosc
32
MHz
Impedances
MATCHED
OFF
1
LNA Boost
Packet Error rate
Payload Length
Preamble Length
RF Port
%
64
Bytes
Symbols
12
RFI_HF
12
Spreading Factor
Supply Voltage
T
e
mperature
3.3
VDC
25
Celsius
mA (TYP)
IDDR_L
10.3
DS70005356C-page 40
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
Table 11-5.ꢀCPU Current Derivation
CPU Contribution
Conditions
Clock
Value
DFLL 48
COREMARK
95
Unit
MHz
Benchmark Algorithm
Current/MHz
Mode
–
uA/MHz
ACTIVE
PL2
–
PL
–
Regulator
LDO
–
Supply Voltage (VDC)
I_CPU
3.3
V
4.5
mA (TYP)
Using the contributions above the total combined current consumption is calculated as follows:
• I_TOTAL
TX
= IDDT_L + I_CPU = 28 + 4.5 mA = 32.5 mA
• I_TOTAL
RX
= IDDR_L + I_CPU = 10.3 + 4.5 mA = 14.8 mA
11.3.2
11.3.3
Line Current in TX Mode
Table 11-6.ꢀLine Current in Tx Mode
Output Mode
I_CPU
4.5
IDDT_L
28
I_TOTAL
32.5
Unit
RFO_LF +13 dBm
PA_BOOST +17 dBm
mA (TYP)
mA (TYP)
4.5
90
94.5
Line Current in Receive Mode
Table 11-7.ꢀLine Current in Receive Mode
Frequency MHz
I_CPU
4.5
IDDR_L
I_TOTAL
Unit
915
868
433
10.3
10.3
11.5
14.8
14.8
15.8
mA (TYP)
mA (TYP)
mA (TYP)
4.5
4.5
11.3.4
Line Current in Low-Power Modes
Table 11-8.ꢀLine Current in Low-Power Modes
State
CPU Mode
ACTIVE
I_CPU
4.5
TRX Mode
SLEEP
IDDSL
0.0002
0.2
TOTAL
4.5
Units
IDLE
mA (TYP)
STANDBY
SLEEP
STANDBY
BACKUP
1.2
SLEEP
1.4
µA (TYP)
nA (TYP)
590
SLEEP
200
790
1. Do
Not Use CPU OFF mode. See
10. Microcontroller
Interface
for details.
DS70005356C-page 41
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
11.3.5
Transmitter Output Power
Table 11-9.ꢀTransmitter Output Power in LoRa Mode
Frequency (MHz)
Output Port
PA_BOOST
RFO_HF
Typical Output Power (dBm)
915
915
868
868
433
433
17
13
17
13
17
13
PA_BOOST
RFO_HF
PA_BOOST
RFO_LF
11.3.6
Transmitter Phase Noise
Table 11-10.ꢀPhase Noise
Offset
10k
Phase Noise (dBc/Hz)
-103
-103
-115
-122
50k
400k
1M
11.3.7
Receiver Sensitivity
Table 11-11.ꢀReceiver Sensitivity in LoRa Mode
Frequency (MHz)
BW (kHz)
125
SF
11
11
12
Sensitivity
-133
Unit
dBm
dBm
dBm
915
868
433
125
-133
7.8
-148
Note:ꢀ
The above results are obtained with TCXO.
11.3.8
Blocking
Table 11-12.ꢀBlocking
Frequency (MHz)
1 MHz
71
2 MHz
76
10 MHz
84
Unit
915
868
433
dB (TYP)
dB (TYP)
dB (TYP)
71
76
84
71
72
78
11.3.9
Transmitter High Power Operation
To
o
perate in the +20 dBm High-Power mode high voltage must be supplied to VDDANA. For some
regions, additional EMI filtering may be needed at high power.
DS70005356C-page 42
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Electrical Characteristics
Table 11-13.ꢀHigh-Power Operational Parameters
Parameter
Value
RF Output Power
Output Port
+20 dBm MAX
PA_BOOST F1
2.4 VDC
VDDANA (Min.)
VDDANA (Max.)
Typical Line Current
Max. Duty Cycle
VSWR
3.6 VDC
120 mA
1% MAX
3:1 MAX
DS70005356C-page 43
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
SAM R34/R35 Package Information
12.
SAM R34/R35 Package Information
12.1
Package Drawings
Figure 12-1.ꢀPackage Drawings of SAM R34/R35
64-Lead Thin, Fine Pitch Ball Grid Array Package (7JX) – 6×6 mm Body [TFBGA]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
6.00
A
NOTE 1
B
6.00
(DATUM B)
(DATUM A)
2X
0.15 C
2X
TOP VIEW
SIDE VIEW
0.15 C
0.20 C
C
A2
A
SEATING
PLANE
64X
A1
0.10 C
(L)
e
A1 BALL PAD CORNER
(L)
64X Øb
0.15
0.08
C
C
A B
e
BOTTOM VIEW
Microchip Technology Drawing
C04-443A Sheet 1 of 2
DS70005356C-page 44
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
SAM R34/R35 Package Information
12.2
SAM R34/R35 Land Pattern
PCB layout pattern for SAM R34/R35 64-Pin BGA is shown below.
Figure 12-2.ꢀSAM R34/R35 Land Pattern
64-Lead Thin, Fine Pitch Ball Grid Array Package (7JX) – 6×6 mm Body [TFBGA]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
C1
C2
ØX
E
SILK SCREEN
G
RECOMMENDED LAND PATTERN
Units
MILLIMETERS
Dimension Limits
MIN
NOM
0.65 BSC
4.55
MAX
0.40
Contact Pitch
Contact Pad Spacing
Contact Pad Spacing
E
C1
C2
4.55
Contact Pad Diameter (X64)
Space Between Pads
X
G
0.20
Notes:
1. Dimensioning
and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-2433A
DS70005356C-page 45
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
13.
Best Practices for Designers
13.1
Introduction
This chapter outlines best practices for design and review of SAM R34/R35 designs. This chapter
illustrates the recommended power supply connections, how to connect external analog references,
programmer, debugger, oscillator, and crystal.
13.1.1 Electromagnetic
Compliance
Best practices for RF designs are beyond the scope of this document. There are several good application
notes listed in the Reference Documentation section. Actual results may vary because of system factors
like enclosures, PCBA design, incidental resonant structures, co-existence with other RF energy sources,
regulatory and regional requirements. The designer must balance these factors and verify with laboratory
measurements.
T
e
sting emissions early in the design cycle is strongly encouraged. Typical best practices
include 4-layer PCB construction, generous ground planes and stitching vias for noise suppression and
counterpoise, separation of RF and digital ground-domains, controlled-impedance transmission lines and
passive components rated for radio frequency operation. Baseband techniques include placing
decoupling capacitors very close to the power pins and an RC-filter on the RESET pin; in addition, a pull-
up resistor on the SWCLK pin is critical for reliable operations.
13.1.2 Operation
in Noisy Environment
If the device is operating in an environment with much electromagnetic noise, it must be protected from
the noise to ensure reliable operation. In particular, placing decoupling capacitors very close to the power
pins, a RC-filter on the RESET pin, and a pull-up resistor on the SWCLK pin is critical for reliable
operations. It is also relevant to eliminate or attenuate noise in order to avoid that it reaches supply pins,
I/O pins and crystals.
13.2
Power Supply
The SAM R34/R35 supports a single or dual power supply from 1.8 to 3.6 VDC. The same voltage must
be applied to both VDDIN and VDDANA.
The internal voltage regulator has three different modes:
• Linear
mode: this mode does not require any external inductor. This is the default mode when CPU
and peripherals are running
• Low
Power (LP) mode: This is the default mode used when the chip is in Standby mode
• Shutdown
mode: When the chip is in Backup mode, the internal regulator is turned off
13.2.1 Power
Supply Connections
The following figures show the recommended power supply connections for Switched/Linear mode,
Linear mode only and with battery backup.
DS70005356C-page 46
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
Figure 13-1.ꢀPower Supply Connection for Linear Mode Only
Close to device
(for every pin)
IO Supply
(1.62V — 3.63V)
SAM R34
VBAT (PB03)
VDDIO
VDDANA
VDDIN
Main Supply
(1.8V — 3.6VDC)
100nF
100nF
VSW
100nF
10µF
10µF
10µF
VDDCORE
1µF
100nF
GND
GNDANA
Figure 13-2.ꢀPower Supply Connection for Battery Backup
Close to device
(for every pin)
IO Supply
(1.62V — 3.63V)
SAM R34
VBAT (PB03)
VDDIO
Main Supply
(1.62V — 3.63V)
VDDANA
VDDIN
10µH
100nF
100nF
100nF
VSW
10µF
10µF
10µF
VDDCORE
1µF
100nF
GND
GNDANA
DS70005356C-page 47
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
Table 13-1.ꢀPower Supply Connections, V
DDCORE
or V
SW
From Internal Regulator
Signal Name
Recommended Pin Connection
Description
V
DDIO
1.8 to 3.6 VDC
Decoupling/filtering capacitors 100nF
(1)(2)
and 10µF
(1)
Digital supply voltage
Decoupling/filtering inductor 10µH
(1)(3)
V
DDANA
1.8 to 3.6 VDC
Decoupling/filtering capacitors 100nF
(1)(2)
and 10µF
(1)
Analog supply voltage
Ferrite bead
(4)
prevents the V
DD
noise interfering with
V
DDANA
V
DDIN
1.8 to 3.6 VDC
Decoupling/filtering capacitors 100nF
(1)(2)
and 10µF
(1)
Digital supply voltage
Decoupling/filtering inductor 10µH
(1)(3)
V
BAT
1.8 to 3.5 VDC when connected
External battery supply input
V
DDCORE
0.9V to 1.2V typical
Decoupling/filtering capacitors 100nF
(1)(2)
and 1µF
(1)
Linear Regulator mode: Core
supply voltage output/ external
decoupling pin
Switched Regulator mode:
Core supply voltage input, must
be connected to V
SW
via
inductor
V
SW
Switching Regulator mode: 10 µH inductor with
saturation current above 150mA and DCR<1Ω
Linear Regulator mode: Not connected
On-Chip Switching mode
regulator output
GND
Ground
GND
ANA
Ground for the analog power
domain
1. These values are only given as a typical example.
2. Decoupling capacitors should be placed close to the device for each supply pin pair in the signal group,
low ESR capacitors should be used for better decoupling.
3. An inductor should be added between the external power and the V
DD
for power filtering.
4. A ferrite bead has better filtering performance compared to standard inductor at high frequencies. A
ferrite bead can be added between the main power supply (V
DD
) and V
DDANA
to prevent digital noise from
entering the analog power domain. The bead should provide enough impedance (e.g. 50Ω at 20MHz and
220Ω at 100MHz) to separate the digital and analog power domains. Make sure to select a ferrite bead
designed for filtering applications with a low DC resistance to avoid a large voltage drop across the ferrite
bead.
DS70005356C-page 48
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
13.3
External Reset Circuit
The external Reset circuit is connected to the RESET pin when the external Reset function is used. The
circuit is not necessary when the RESET pin is not driven LOW externally by the application circuitry.
The reset switch can also be removed, if a manual reset is not desired. The RESET pin itself has an
internal pull-up resistor, hence it is optional to add any external pull-up resistor.
Figure 13-3.ꢀExternal Reset Circuit Schematic
V
DD
10kΩ
RESET
330Ω
100nF
GND
A pull-up resistor makes sure that the reset does not go low and unintentionally causing a device reset.
An additional resistor has been added in series with the switch to safely discharge the filtering capacitor,
i.e. preventing a current surge when shorting the filtering capacitor which again can cause a noise spike
that can have a negative effect on the system.
Table 13-2.ꢀReset Circuit Connections
Signal Name
Recommended Pin Connection
Description
RESET
Reset low level threshold voltage
Reset pin
V
DDIO
= 1.6V – 2.0V: Below 0.33 * V
DDIO
V
DDIO
= 2.7V – 3.6V: Below 0.36 * V
DDIO
Decoupling/filter capacitor 100nF
(1)
Pull-up resistor 10kΩ
(1)(2)
Resistor in series with the switch 330Ω
(1)
1. These values are only given as a typical example.
2. The SAM R34/R35 features an internal pull-up resistor on the RESET pin, hence an external pull up is
optional.
DS70005356C-page 49
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
13.4
13.5
Unused or Unconnected Pins
For unused pins, the default state of the pins will give the lowest current leakage. Thus, there is no need
to do any configuration of the unused pins in order to lower the power consumption.
Clocks and Crystal Oscillators
The SAM R34/R35 can be run from internal or external clock sources, or a mix of internal and external
sources. An example of usage can be to use the internal 16MHz oscillator as source for the system clock
and an external 32.768kHz watch crystal as clock source for the Real-Time counter (RTC).
13.5.1 External
Clock Source
Figure 13-4.ꢀExternal Clock Source Schematic
External
Clock
XIN
XOUT/GPIO
NC/GPIO
Table 13-3.ꢀExternal Clock Source Connections
Signal Name
Recommended Pin Connection
Description
XIN
XIN is used as input for an external clock signal
Can be left unconnected or used as normal GPIO
Input for inverting oscillator pin
NC/GPIO
XOUT/GPIO
13.5.2 Crystal
Oscillator
Figure 13-5.ꢀCrystal Oscillator Schematic
XIN
15pF
15pF
XOUT
The crystal should be located as close to the device as possible. Long signal lines may cause too high of
a load to operate the crystal, and cause crosstalk to other parts of the system.
Table 13-4.ꢀCrystal Oscillator Checklist
Signal Name
XIN
Recommended Pin Connection
Load capacitor 15pF
(1)(2)
Description
External crystal between 0.4 to 32MHz
XOUT
Load capacitor 15pF
(1)(2)
DS70005356C-page 50
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
1. These values are only given as a typical example.
2. The capacitors should be placed close to the device for each supply pin pair in the signal group.
13.5.3 External
Real Time Oscillator
The low frequency crystal oscillator is optimized for use with a 32.768kHz watch crystal. When selecting
crystals, load capacitance and the crystal’s Equivalent Series Resistance (ESR) must be taken into
consideration. Both values are specified by the crystal vendor.
SAM R34/R35 oscillator is optimized for very low power consumption, hence close attention should be
made when selecting crystals.
The typical parasitic load capacitance values are available in the Electrical Characteristics section. This
capacitance and PCB capacitance can allow using a crystal inferior to 12.5pF load capacitance without
external capacitors as shown in
Figure 13-6
.
Figure 13-6.ꢀExternal Real Time Oscillator without Load Capacitor
XIN32
32.768kHz
XOUT32
To
i
mprove accuracy and Safety Factor, the crystal datasheet can recommend adding external capacitors
as shown in
Figure 13-7
.
To
f
ind suitable load capacitance for a 32.768kHz crystal, consult the crystal datasheet.
Figure 13-7.ꢀExternal Real Time Oscillator with Load Capacitor
XIN32
12pF
32.768kHz
12pF
XOUT32
Table 13-5.ꢀExternal Real Time Oscillator Checklist
Signal Name
XIN32
Recommended Pin Connection
Load capacitor 22pF
(1)(2)
Description
Timer oscillator input
Timer oscillator output
XOUT32
Load capacitor 22pF
(1)(2)
1. These values are only given as typical examples.
2. The capacitors should be placed close to the device for each supply pin pair in the signal group.
Note:ꢀ
In order to minimize the cycle-to-cycle jitter of the external oscillator, keep the neighboring pins as
steady as possible. For neighboring pin details, refer to the Oscillator Pinout section.
DS70005356C-page 51
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
13.5.4 Calculating
the Correct Crystal Decoupling Capacitor
The model shown in
Figure 13-8
can be used to calculate correct load capacitor for a given crystal. This
model includes internal capacitors C
Ln
, external parasitic capacitance C
ELn
and external load capacitance
C
Pn
.
Figure 13-8.ꢀCrystal Circuit With Internal, External and Parasitic Capacitance
C
L1
C
L2
XIN
XOUT
C
EL1
C
P1
C
P2
C
EL2
Using this model the total capacitive load for the crystal can be calculated as shown in the equation
below:
ꢀ
+
ꢀ
+
ꢀ
ꢀ
+
ꢀ
+
ꢀ
ꢁ
1
ꢂ
1
EL1
ꢁ
2
ꢂ
2 EL2
ꢀ
tot
=
ꢀ
ꢁ
1
+
ꢀ
+
ꢀ
+
ꢀ
+
ꢀ
+
ꢀ
ꢁ
2
ꢂ
2 EL2
ꢂ
1
EL1
where C
tot
is the total load capacitance seen by the crystal. This value should be equal to the load
capacitance value found in the crystal manufacturer datasheet.
The parasitic capacitance C
ELn
can in most applications be disregarded as these are usually very small. If
accounted for, these values are dependent on the PCB material and PCB layout.
For some crystal the internal capacitive load provided by the device itself can be enough.
T
o
c
alculate the
total load capacitance in this case. C
ELn
and C
Pn
are both zero, C
L1
= C
L2
= C
L
, and the equation reduces
to the following:
ꢀ
ꢁ
ꢀ
tot
=
2
See the related links for equivalent internal pin capacitance values.
13.6
Programming and Debug Ports
For programming and/or debugging the SAM R34/R35, the device should be connected using the Serial
Wire Debug, SWD, interface. Currently the SWD interface is supported by several Microchip and third
™
party programmers and debuggers, like the Atmel-ICE, SAM-ICE
or SAM R34/R35 Xplained Pro (SAM
R34/R35 evaluation kit) Embedded Debugger.
Refer to the Atmel-ICE, SAM-ICE or SAM R34/R35 Xplained Pro user guides for details on debugging
and programming connections and options. For connecting to any other programming or debugging tool,
refer to that specific programmer or debugger’s user guide.
DS70005356C-page 52
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
The SAM R34/R35 Xplained Pro evaluation board supports programming and debugging through the
onboard embedded debugger, so no external programmer or debugger is needed.
Note:ꢀ
A pull-up resistor on the SWCLK pin is critical for reliable operation. Refer to related link for more
information.
Figure 13-9.ꢀSWCLK Circuit Connections
V
DD
1kΩ
SWCLK
Table 13-6.ꢀSWCLK Circuit Connections
Pin Name
Description
Recommended Pin Connection
SWCLK
Serial wire clock pin
Pull-up resistor 1kΩ
13.6.1 Cortex
Debug Connector (10-pin)
For debuggers and/or programmers that support the Cortex Debug Connector (10-pin) interface, the
signals should be connected as shown in following figure. The signal details are described in the following
table.
DS70005356C-page 53
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
Figure 13-10.ꢀCortex Debug Connector (10-pin)
V
DD
Cortex Debug Connector
(10-pin)
VTref
GND
GND
SWDIO
SWCLK
1
RESET
SWCLK
NC
NC
RESET
NC
NC
SWDIO
GND
Table 13-7.ꢀCortex Debug Connector (10-pin)
Header Signal Name
SWCLK
Description
Serial wire clock pin
SWDIO
Serial wire bidirectional data pin
T
a
rget device reset pin, active low
RESET
VTref
T
a
rget voltage sense, should be connected to the device V
DD
Ground
GND
13.6.2 10-pin
JTAGICE3 Compatible Serial Wire Debug Interface
The JTAGICE3 debugger and programmer does not support the Cortex Debug Connector (10-pin)
directly, hence a special pinout is needed to directly connect the SAM R34/R35 to the JTAGICE3,
alternatively one can use the JTAGICE3 squid cable and manually match the signals between the
JTAGICE3 and SAM R34/R35.
Figure 13-11
describes how to connect a 10-pin header that support
connecting the JTAGICE3 directly to the SAM R34/R35 without the need for a squid cable. This can also
be used for the Atmel-ICE AVR connector port.
The JTAGICE3 squid cable or the JTACICE3 50mil cable can be used to connect the JTAGICE3
programmer and debugger to the SAM R34/R35.
Figure 13-11
illustrates the correct pinout for the
JTAGICE3 50 mil, and details are given in
T
a
ble 13-8
.
DS70005356C-page 54
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
Figure 13-11.ꢀ10-pin JTAGICE3 Compatible Serial Wire Debug Interface
10-pin JTAGICE3 Compatible
Serial Wire Debug Header
V
DD
SWDCLK
GND
1
RESET
SWCLK
VTG
NC
SWDIO
RESET
NC
NC
NC
NC
SWDIO
GND
Table 13-8.ꢀ10-pin JTAGICE3 Compatible Serial Wire Debug Interface
Header Signal Name
SWDCLK
SWDIO
Description
Serial wire clock pin
Serial wire bidirectional data pin
T
a
rget device reset pin, active low
T
a
rget voltage sense, should be connected to the device V
DD
Ground
RESET
VTG
GND
13.6.3 20-pin
IDC JTAG Connector
For debuggers and/or programmers that support the 20-pin IDC JTAG Connector, e.g. the SAM-ICE, the
signals should be connected as shown in
Figure 13-12
with details described in
T
a
ble 13-9
.
DS70005356C-page 55
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Best Practices for Designers
Figure 13-12.ꢀ20-pin IDC JTAG Connector
V
DD
20-pin IDC JTAG Connector
VCC
NC
NC
1
RESET
GND
GND
GND
GND
GND
GND*
GND*
GND*
GND*
NC
SWDIO
SWCLK
SWDIO
GND
SWDCLK
NC
NC
RESET
NC
NC
Table 13-9.ꢀ20-pin IDC JTAG Connector
Header Signal Name
Description
SWDCLK
SWDIO
RESET
VCC
Serial wire clock pin
Serial wire bidirectional data pin
T
a
rget device reset pin, active low
T
a
rget voltage sense, should be connected to the device V
DD
Ground
GND
GND*
These pins are reserved for firmware extension purposes. They can be left
unconnected or connected to GND in normal debug environment. They are not
essential for SWD in general.
DS70005356C-page 56
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Reference Documentation
14.
Reference Documentation
The following documents can be used for further study:
7. SAM
R34/R35 Errata Sheet (DS80000834)
Note:ꢀ
This document describes synergistic features unique to the combined chip-set in LoRa
applications. Reiteration of individual component details would be redundant and is best left to the
primary data sheets. The reader is encouraged to review the primary documents listed above for up-to-
date technical details and errata.
DS70005356C-page 57
Datasheet
©
2019 Microchip
T
e
chnology Inc.
SAM R34/R35
Document Revision History
15.
Document Revision History
Table 15-1.ꢀDocument Revision History
Revision
Date
Section
Description
C
05/2019
•
Features
Updated
•
Figure 4-2
•
4.3 Peripheral
Key
T
a
ble
•
T
a
ble 5-2
•
T
a
ble 6-1
•
7.1 Cortex
M0+ Processor
•
Figure 8-1
•
T
a
ble 8-1
•
11.3.4 Line
Current in Low-Power
Modes
•
13.2.1 Power
Supply Connections
•
14. Reference
Documentation
•
9.2 Transceiver
Validation
Added
•
13.1.2 Operation
in Noisy
Environment
B
10/2018
11.3 Performance
Characteristics
Updated
Added
•
11.3.1 Method
of Derivation
•
4.3 Peripheral
Key
T
a
ble
•
T
a
ble 11-6
•
T
a
ble 11-7
•
T
a
ble 11-8
•
T
a
ble 11-11
Updated
14. Reference
Documentation
Document
Updated
A
04/2018
Initial release
DS70005356C-page 58
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Note the following details of the code protection feature on Microchip devices:
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Microchip nor any other semiconductor manufacturer can guarantee the security of their
code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the
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Fax: 34-91-708-08-91
Sweden – Gothenberg
T
e
l: 46-31-704-60-40
Sweden – Stockholm
T
e
l: 46-8-5090-4654
UK – Wokingham
T
e
l: 919-844-7510
New York, NY
T
e
l: 631-435-6000
San Jose, CA
T
e
l: 408-735-9110
T
e
l: 408-436-4270
Canada – Toronto
T
e
l: 905-695-1980
Fax: 905-695-2078
T
e
l: 44-118-921-5800
Fax: 44-118-921-5820
DS70005356C-page 62
Datasheet
©
2019 Microchip
T
e
chnology Inc.
