Microchip-Tech-DN2535N3-G-P013
| Part # | Microchip-Tech-DN2535N3-G-P013 |
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Supertex inc.
DN2535
N-Channel Depletion-Mode
Vertical DMOS FETs
General Description
Features
►
High input impedance
►
Low input capacitance
►
Fast switching speeds
►
Low on-resistance
The Supertex
DN2535 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
►
Free from secondary breakdown
►
Low input and output leakage
Applications
►
Normally-on switches
►
Solid state relays
►
Converters
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
►
Linear amplifiers
►
Constant current sources
►
Power supply circuits
►
T
e
lecom
Ordering Information
Product Summary
R
DS(ON)
(max)
25
Ω
I
DSS
(min)
Part Number
Package Option
Packing
BV
DSX
/BV
DGX
DN2535N3-G
TO-92
1000/Bag
350V
150mA
DN2535N3-G P002
DN2535N3-G P003
DN2535N3-G P005
DN2535N3-G P013
DN2535N3-G P014
DN2535N5-G
Pin Configuration
TO-92
2000/Reel
50/Tube
DRAIN
TO-220
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
SOURCE
DRAIN
SOURCE
GATE
Absolute Maximum Ratings
Parameter
GATE
3-Lead TO-92
3-Lead TO-220
Value
BV
DSX
BV
DGX
±20V
Drain-to-source voltage
Drain-to-gate voltage
Product Marking
Si
D
N
2 5 3 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Gate-to-source voltage
Operating and storage
temperature
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
-55
O
C to +150
O
C
Package may or may not include the following marks: Si or
3-Lead TO-92
L = Lot Number
YY = Year Sealed
DN2535N5
WW = Week Sealed
LLLLLLLLL
YYWW
= “Green” Packaging
Typical Thermal Resistance
Package
Package may or may not include the following marks: Si or
θ
ja
132
O
C/W
29
O
C/W
3-Lead TO-220
TO-92
TO-220
Doc.# DSFP-DN2535
B062813
Supertex inc.
DN2535
Thermal Characteristics
I
D
I
D
Power Dissipation
†
Package
I
DR
I
DRM
(continuous)
†
(pulsed)
@T
C
= 25
O
C
TO-92
120mA
500mA
500mA
500mA
1.0W
15W
120mA
500mA
500mA
500mA
TO-220
Notes:
I
D
(continuous) is limited by max rated T
j
.
†
Electrical Characteristic
s
(T
A
= 25
O
C unless otherwise specified)
Sym
BV
DSX
V
GS(OFF)
Parameter
Min Typ Max
Units Conditions
Drain-to-source breakdown voltage
Gate-to-source off voltage
350
–
–
–
–
–
–
V
V
V
GS
= -5.0
V
,
I
D
= 100µA
V
DS
= 25
V
,
I
D
= 10µA
-1.5
-3.5
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature
–
–
–
-4.5 mV/
O
C V
DS
= 25
V
,
I
D
= 10µA
I
GSS
Gate body leakage current
100
10
nA
µA
V
GS
= ±20
V
,
V
DS
= 0V
V
DS
= Max rating, V
GS
= -10V
I
D(OFF)
Drain-to-source leakage current
V
DS
= 0.8 Max Rating,
V
GS
= -10
V
, T
A
= 125
O
C
–
–
1.0
mA
I
DSS
Saturated drain-to-source current
150
–
17
–
–
25
1.1
–
mA
V
GS
= 0
V
,
V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state resistance
–
–
–
–
–
–
–
–
–
–
–
–
Ω
V
GS
= 0
V
,
I
D
= 120mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature
%/
O
C V
GS
= 0
V
,
I
D
= 120mA
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
Forward transconductance
Input capacitance
325
mmho V
DS
= 10
V
,
I
D
= 100mA
200 300
V
GS
= -10
V
,
V
DS
= 25
V
,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
12
30
5.0
10
15
15
20
1.8
–
pF
ns
1.0
–
V
DD
= 25
V
,
I
D
= 150mA,
R
GEN
= 25Ω,
Rise time
–
t
d(OFF)
t
f
Turn-off delay time
–
Fall time
–
–
V
SD
t
rr
Diode forward voltage drop
Reverse recovery time
V
V
GS
= -10
V
,
I
SD
= 120mA
V
GS
= -10
V
,
I
SD
= 1.0A
800
ns
Notes:
1.
2.
All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
VDD
90%
INPUT
Pulse
R
L
10%
Generator
-10V
OUTPUT
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
f
t
r
VDD
OUTPUT
INPUT
D.U.
T
.
10%
10%
90%
90%
0V
Doc.# DSFP-DN2535
B062813
Supertex inc.
2
DN2535
Typical Performance Curves
Output Characteristics
Saturation Characteristics
0.5
250
200
150
100
50
V
GS
= 1.0V
0.5V
V
GS
= 1.0V
0.4
0.3
0.2
0.1
0
0.5V
0V
0V
-0.5V
-0.5V
-1.0V
-1.0V
5
0
0
1
2
3
4
0
80
160
240
320
400
V
DS
(volts)
V
DS
(volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
20
10
0
0.5
0.4
0.3
0.2
0.1
0
T
A
= 25
O
C
V
DS
= 10V
T
A
= -55
O
C
TO-220
25
O
C
125
O
C
TO-92
0
25
50
75
100
125
150
0
50
100
150
200
250
T
C
(
O
C)
I
D
(amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
0
1.0
0.1
TO-92/TO-220 (pulsed)
T
A
= 25
O
C
TO-220 (DC)
TO-92 (DC)
TO-220
T
C
= 25
O
C
P
D
= 15W
0.01
0.001
TO-92
T =
25
O
C
P
C
D
= 1.0W
T
C
= 25
O
C
1.0
0.001
0.01
0.1
1.0
10
10
100
1000
V
DS
(volts)
t
p
(seconds)
Doc.# DSFP-DN2535
B062813
Supertex inc.
3
DN2535
Typical Performance Curves
(cont.)
BV
DSS
Variation with
T
e
mperature
On-Resistance vs. Drain Current
V
GS
= 0V
100
80
60
40
20
0
1.10
V
GS
= -5.0V
1.05
1.00
0.95
0.90
0.85
-50
0
50
100
150
0
80
160
240
320
400
T
j
(
O
C)
I
D
(amperes)
V
(th)
and R
DS
Variation with
T
e
mperature
R
DS(ON)
@ I
D
= 120mA
Transfer Characteristics
V
DS
= 10V
2.5
2.0
1.5
1.0
0.5
0
0.40
T
A
= -55
O
C
0.32
0.24
0.16
0.08
0
25
O
C
125
O
C
V
GS(OFF)
@10µA
-3
-2
-1
0
1
2
-50
0
50
100
150
T
j
(
O
C)
V
GS (volts)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
GS
= -10V
C
ISS
15
10
5
V
150
100
50
V
DS
= 20V
200pF
0
V
DS
= 40V
C
OSS
-5
C
RSS
170pF
0
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-DN2535
B062813
Supertex inc.
4
DN2535
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
–
b
.014
†
–
c
D
.175
–
E
.125
–
E1
.080
–
e
e1
.045
–
L
.500
–
MIN
NOM
MAX
.014
†
–
.095
–
Dimensions
(inches)
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
Doc.# DSFP-DN2535
B062813
Supertex inc.
5
DN2535
3-Lead TO-220 Package Outline (N5)
A
Seating
Plane
E
A
E
A1
E2
ΦP
Q
H1
H1
4
D1
D
Chamfer
Optional
Thermal
Pad
D1
1
2
3
E1
L
View
B
A2
c
e
A
Side View
Front View
View A – A
1
3
2
L1
b2
b
View B
Symbol
A
A1
A2
b
b2
c
D
D1
D2
E
E1
E2
e
H1
L
L1
Q
Φ
P
MIN .140
.020 .080 .015 .045 .012
†
.560 .326
†
.474
†
.380 .270 0.20*
NOM .027
.057
MAX .190 .055 .120
†
.040 .070 .024 .650 .361
†
.507 .420 .350 .030
.230 .500 .200* .100 .139
Dimen-
sion
(inches)
.100
BSC
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
.270 .580 .250 .135 .161
JEDEC Registration TO-220, Variation AB, Issue K, April 2002.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #:
DSPD-3TO220N5, Version C041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
e
l: 408-222-8888
Doc.# DSFP-DN2535
B062813
6
