Microchip-Tech-DN2535N3-G-P013

Part #Microchip-Tech-DN2535N3-G-P013
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Microchip-Tech-DN2535N3-G-P013
Supertex inc.  
DN2535  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
General Description  
Features  
►
High input impedance  
►
Low input capacitance  
►
Fast switching speeds  
►
Low on-resistance  
The Supertex
 
DN2535 is a low threshold depletion mode  
(normally-on) transistor utilizing an advanced vertical  
DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces a device  
with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all  
MOS structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
►
Free from secondary breakdown  
►
Low input and output leakage  
Applications  
►
Normally-on switches  
►
Solid state relays  
►
Converters  
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
►
Linear amplifiers  
►
Constant current sources  
►
Power supply circuits  
►
T
e
lecom  
Ordering Information  
Product Summary  
R

DS(ON)  

(max)  
25
Ω  
I

DSS  

(min)  
Part Number  
Package Option  
Packing  
BV

DSX

/BV

DGX  

DN2535N3-G  
TO-92  
1000/Bag  
350V  
150mA  
DN2535N3-G P002  
DN2535N3-G P003  
DN2535N3-G P005  
DN2535N3-G P013  
DN2535N3-G P014  
DN2535N5-G  
Pin Configuration  
TO-92  
2000/Reel  
50/Tube  
DRAIN  
TO-220  
DRAIN  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
SOURCE  
DRAIN  
SOURCE  
GATE  
Absolute Maximum Ratings  
Parameter  
GATE  
3-Lead TO-92  
3-Lead TO-220  
Value  
BV

DSX  

BV

DGX  

±20V  
Drain-to-source voltage  
Drain-to-gate voltage  
Product Marking  
Si
D
N  
2 5 3 5  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
= “Green” Packaging  
Gate-to-source voltage  
Operating and storage  
temperature  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
-55

O

C to +150

O

C  
Package may or may not include the following marks: Si or  
3-Lead TO-92  
L = Lot Number  
YY = Year Sealed  
DN2535N5  
WW = Week Sealed  
LLLLLLLLL  
YYWW  
= “Green” Packaging  
Typical Thermal Resistance  
Package  
Package may or may not include the following marks: Si or  
θ

ja  

132

O

C/W  
29

O

C/W  
3-Lead TO-220  
TO-92  
TO-220  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  

DN2535  
Thermal Characteristics  
I

D  

I

D  

Power Dissipation  
†
Package  
I

DR  

I

DRM  

(continuous)

†  

(pulsed)  
@T

C

= 25

O

C  
TO-92  
120mA  
500mA  
500mA  
500mA  
1.0W  
15W  
120mA  
500mA  
500mA  
500mA  
TO-220  
Notes:  
I

D

(continuous) is limited by max rated T

j

.  
†
Electrical Characteristic
s
(T

A

= 25

O

C unless otherwise specified)  
Sym  
BV

DSX  

V

GS(OFF)  

Parameter  
Min Typ Max
 
Units Conditions  
Drain-to-source breakdown voltage  
Gate-to-source off voltage  
350  
–
–
–
–
–
–
V
V
V

GS

= -5.0
V
,
I

D

= 100µA  
V

DS

= 25
V
,
I

D

= 10µA  
-1.5  
-3.5  
ΔV

GS(OFF)

Change in V

GS(OFF)

with temperature  
–
–
–
-4.5 mV/

O

C V

DS

= 25
V
,
I

D

= 10µA  
I

GSS  

Gate body leakage current  
100  
10  
nA  
µA  
V

GS

= ±20
V
,
V

DS

= 0V  
V

DS

= Max rating, V

GS

= -10V  
I

D(OFF)  

Drain-to-source leakage current  
V

DS

= 0.8 Max Rating,  
V

GS

= -10
V
, T

A

= 125

O

C  
–
–
1.0  
mA  
I

DSS  

Saturated drain-to-source current  
150  
–
17  
–
–
25  
1.1  
–
mA  
V

GS

= 0
V
,
V

DS

= 25V  
R

DS(ON)  

Static drain-to-source on-state resistance  
–
–
–
–
–
–
–
–
–
–
–
–
Ω
V

GS

= 0
V
,
I

D

= 120mA  
ΔR

DS(ON)

Change in R

DS(ON)

with temperature  
%/

O

C V

GS

= 0
V
,
I

D

= 120mA  
G

FS  

C

ISS  

C

OSS  

C

RSS  

t

d(ON)  

t

r  

Forward transconductance  
Input capacitance  
325  
mmho V

DS

= 10
V
,
I

D

= 100mA  
200 300  
V

GS

= -10
V
,  
V

DS

= 25
V
,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
12  
30  
5.0  
10  
15  
15  
20  
1.8  
–
pF  
ns  
1.0  
–
V

DD

= 25
V
,  
I

D

= 150mA,  
R

GEN

= 25Ω,  
Rise time  
–
t

d(OFF)  

t

f  

Turn-off delay time  
–
Fall time  
–
–
V

SD  

t

rr  

Diode forward voltage drop  
Reverse recovery time  
V
V

GS

= -10
V
,
I

SD

= 120mA  
V

GS

= -10
V
,
I

SD

= 1.0A  
800  
ns  
Notes:  
1.  
2.  
All D.C. parameters 100% tested at 25

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
0V  
VDD  
90%  
INPUT  
Pulse  
R

L  

10%  
Generator  
-10V  
OUTPUT  
t

(ON)  

t

d(ON)  

t

(OFF)  

t

d(OFF)  

R

GEN  

t

f  

t

r  

VDD  
OUTPUT  
INPUT  
D.U.
T
.  
10%  
10%  
90%  
90%  
0V  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  
2

DN2535  
Typical Performance Curves  
Output Characteristics  
Saturation Characteristics  
0.5  
250  
200  
150  
100  
50  
V

GS

= 1.0V  
0.5V  
V

GS

= 1.0V  
0.4  
0.3  
0.2  
0.1  
0
0.5V  
0V  
0V  
-0.5V  
-0.5V  
-1.0V  
-1.0V  
5
0
0
1
2
3
4
0
80  
160  
240  
320  
400  
V

DS

(volts)  
V

DS

(volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Case Temperature  
20  
10  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
T

A

= 25

O

C  
V

DS

= 10V  
T

A

= -55

O

C  
TO-220  
25

O

C  
125

O

C  
TO-92  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
T

C

(

O

C)  
I

D

(amperes)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
0.1  
TO-92/TO-220 (pulsed)  
T

A

= 25

O

C  
TO-220 (DC)  
TO-92 (DC)  
TO-220  
T

C

= 25

O

C  
P

D

= 15W  
0.01  
0.001  
TO-92  
T =
 
25

O

C  
P

C

D

= 1.0W  
T

C

= 25

O

C  
1.0  
0.001  
0.01  
0.1  
1.0  
10  
10  
100  
1000  
V

DS

(volts)  
t

p

(seconds)  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  
3

DN2535  
Typical Performance Curves
(cont.)  
BV

DSS

Variation with
T
e
mperature  
On-Resistance vs. Drain Current  
V

GS

= 0V  
100  
80  
60  
40  
20  
0
1.10  
V

GS

= -5.0V  
1.05  
1.00  
0.95  
0.90  
0.85  
-50  
0
50  
100  
150  
0
80  
160  
240  
320  
400  
T

j

(

O

C)  
I

D

(amperes)  
V

(th)

and R

DS

Variation with
T
e
mperature  
R

DS(ON)

@ I

D

= 120mA  
Transfer Characteristics  
V

DS

= 10V  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0.40  
T

A

= -55

O

C  
0.32  
0.24  
0.16  
0.08  
0
25

O

C  
125

O

C  
V

GS(OFF)

@10µA  
-3  
-2  
-1  
0
1
2
-50  
0
50  
100  
150  
T

j

(

O

C)  
V

GS (volts)  

Gate Drive Dynamic Characteristics  
Capacitance vs. Drain-to-Source Voltage  
200  
f = 1MHz  

GS

= -10V  
C

ISS  

15  
10  
5
V
150  
100  
50  
V

DS

= 20V  
200pF  
0
V

DS

= 40V  
C

OSS  

-5  
C

RSS  

170pF  
0
0
10  
20  
30  
40  
0
0.4  
0.8  
1.2  
1.6  
2.0  
V

DS

(volts)  
Q

G

(nanocoulombs)  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  
4

DN2535  
3-Lead TO-92 Package Outline (N3)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
–
b
.014

†  

–
c
D
.175  
–
E
.125  
–
E1  
.080  
–
e
e1  
.045  
–
L
.500  
–
MIN  
NOM  
MAX  
.014

†  

–
.095  
–
Dimensions  
(inches)  
.210  
.022

†  

.022

†  

.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  
5

DN2535  
3-Lead TO-220 Package Outline (N5)  
A
Seating  
Plane  
E
A
E
A1  
E2  
ΦP  
Q
H1  
H1  
4
D1  
D
Chamfer  
Optional  
Thermal  
Pad  
D1  
1
2
3
E1  
L
View  
B
A2  
c
e
A
Side View  
Front View  
View A – A  
1
3
2
L1  
b2  
b
View B  
Symbol  
A
A1  
A2  
b
b2  
c
D
D1  
D2  
E
E1  
E2  
e
H1  
L
L1  
Q
Φ
P  
MIN .140
 
.020 .080 .015 .045 .012

†

.560 .326

†

.474

†

.380 .270 0.20*  
NOM .027
 
.057  
MAX .190 .055 .120

†

.040 .070 .024 .650 .361

†

.507 .420 .350 .030  
.230 .500 .200* .100 .139  
Dimen-  
sion  
(inches)  
.100  
BSC  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
.270 .580 .250 .135 .161  
JEDEC Registration TO-220, Variation AB, Issue K, April 2002.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc. #:
DSPD-3TO220N5, Version C041009.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)  
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
T
e
l: 408-222-8888  
Doc.# DSFP-DN2535  
B062813  
6