Microchip-Tech-DN3535N8-G
| Part # | Microchip-Tech-DN3535N8-G |
| Download | Microchip-Tech-DN3535N8-G |
Supertex inc.
DN3535
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
General Description
►
High input impedance
►
Low input capacitance
►
Fast switching speeds
►
Low on-resistance
This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
►
Free from secondary breakdown
►
Low input and output leakage
Applications
►
Normally-on switches
►
Solid state relays
►
Converters
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
►
Linear amplifiers
►
Constant current sources
►
Power supply circuits
►
T
e
lecom
Product Summary
Ordering Information
R
DS(ON)
(max)
10
Ω
I
DSS
(min)
Part Number
Package Option
Packing
BV
DSX
/BV
DGX
TO-243AA (SOT-89)
DN3535N8-G
2000/Reel
350V
200mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration
Absolute Maximum Ratings
Parameter
DRAIN
Value
BV
DSX
BV
DGX
±20V
Drain-to-source voltage
Drain-to-gate voltage
SOURCE
DRAIN
GATE
Gate-to-source voltage
Operating and storage
temperature
TO-243AA (SOT-89)
-55
O
C to +150
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Marking
W = Code for week sealed
= “Green” Packaging
DN5SW
Package may or may not include the following marks: Si or
Typical Thermal Resistance
TO-243AA (SOT-89)
Package
θ
ja
133
O
C/W
‡
TO-243AA (SOT-89)
Notes:
‡
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Doc.# DSFP-DN3535
A062713
Supertex inc.
DN3535
Thermal Characteristics
I
D
I
D
Power Dissipation
†
Package
I
DR
I
DRM
(continuous)
†
(pulsed)
@T
A
= 25
O
C
TO-243AA
230mA
500mA
1.6W
‡
230mA
500mA
Notes:
†
‡
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristic
s
(T
A
= 25
O
C unless otherwise specified)
Sym
Parameter
Min
Typ
Max
–
Units Conditions
BV
DSS
Drain-to-source breakdown voltage
350
–
–
–
–
–
V
V
V
GS
= -5.0
V
,
I
D
= 1.0µA
V
DS
= 15V, I
D
= 10µA
V
GS(OFF)
Gate-to-source off voltage
-1.5
-3.5
-4.5
100
1.0
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature
–
–
–
mV/
O
C V
DS
= 15V, I
D
= 10µA
I
GSS
Gate body leakage current
nA
µA
V
GS
= ±20
V
,
V
DS
= 0V
V
DS
= Max rating, V
GS
= -5.0V
I
D(OFF)
Drain-to-source leakage current
Saturated drain-to-source current
V
DS
= 0.8 Max Rating,
V
GS
= -5.0
V
, T
A
= 125
O
C
–
200
–
–
–
–
1.0
–
mA
mA
Ω
I
DSS
V
GS
= 0
V
,
V
DS
= 15V
Static drain-to-source on-state
resistance
R
DS(ON)
10
V
GS
= 0
V
,
I
D
= 150mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature
–
–
1.1
–
%/
O
C V
GS
= 0
V
,
I
D
= 150mA
mmho V
DS
= 10V, I
D
= 100mA
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
Forward transconductance
Input capacitance
200
–
–
–
–
–
–
–
–
–
–
–
360
40
10
15
20
20
30
1.8
–
V
GS
= -5.0
V
,
V
DS
= 25V,
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
–
pF
f = 1.0MHz
–
–
V
DD
= 25V,
Rise time
–
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
ns
t
d(OFF)
t
f
Turn-off delay time
–
Fall time
–
–
V
SD
Diode forward voltage drop
Reverse recovery time
V
V
GS
= -5.0
V
,
I
SD
= 150mA
V
GS
= -5.0
V
,
I
SD
= 150mA
t
rr
800
ns
Notes:
1. All
D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All
A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
VDD
90%
INPUT
Pulse
R
L
10%
Generator
-10V
OUTPUT
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
R
GEN
t
f
t
r
VDD
INPUT
D.U.
T
.
10%
10%
OUTPUT
90%
90%
0V
Doc.# DSFP-DN3535
A062713
Supertex inc.
2
DN3535
Typical Performance Curves
Saturation Characteristics
Output Characteristics
1.0
1.0
0.8
0.6
0.4
0.2
0
V
GS
= +2.0V
0V
V
GS
= +2V
0V
-0.5V
-0.5V
0.8
0.6
0.4
0.2
0
-0.8V
-1.0V
-0.8V
-1V
-1.5V
-2V
-1.5V
-2V
10
0
2
4
6
8
0
50
100
150
200
250
300
350
V
DS
(volts)
V
DS
(volts)
Power Dissipation vs. Ambient
T
e
mperature
T
r
ansconductance vs. Drain Current
V
DS
= 10V
2.0
1.0
0.8
0.6
0.4
0.2
0
TO-243AA
T
A
= -55
O
C
1.5
1.0
0.5
0
T
A
= 25
O
C
T
A
= 125
O
C
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
T
A
(
O
C)
I
D
(amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
0.8
0.6
0.4
0.2
0
T
A
= 25
O
C
TO-243AA (pulsed)
1.0
0.1
TO-243AA (DC)
TO-243AA
P
D
= 1.6W
T
C
= 25
O
C
0.01
0.001
1
10
100
1000
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
P
(seconds)
Doc.# DSFP-DN3535
A062713
Supertex inc.
3
DN3535
Typical Performance Curves
(cont.)
DX
FUX”
Xctkcvkqp”ykvj”Vgorgtcvwtg
Qp”Tgukuvcpeg”xu0″Ftckp”Ewttgpv
1.2
25
20
15
10
5
V
GS
= 0V
I
D
= 1mA
V
GS
= -5V
1.1
1.0
0.9
0.8
0
0.0
-50
0
50
100
150
0.2
0.4
0.6
0.8
1.0
T
j
(
O
C)
I
D
(amperes)
X
IU*QHH+”
cpf”T
FU*QP+”
y1Vgorgtcvwtg
V
t
cpuhgt”Ejctcevgtkuvkeu
V
DS
= 10V
1300
1.4
1.2
1.0
0.8
0.6
0.4
2.4
2.0
1.6
1.2
0.8
T
A
= -55
O
C
900
700
500
300
100
25
O
C
V
GS(OFF)
@ 10µA
125
O
C
R
DS(ON)
@ 0V, 150mA
0.4
150
-50
-25
0
25
50
75
100
125
-3
-2
-1
0
1
2
T
j
(
O
C)
V
GS
(volts)
Ecrcekvcpeg”xu0″Ftckp”Uqwteg”Xqnvcig
Icvg”Ftkxg”F{pcoke”Ejctcevgtkuvkeu
350
300
250
200
150
100
3
2
I
D
= 150mA
V
GS
= -5V
1
V
DS
= 40V
0
-1
-2
-3
-4
-5
C
ISS
50
0
C
OSS
C
RSS
0
10
20
30
40
0
500
1000
1500
2000
V
DS
(volts)
Q
G
(picocoulombs)
Doc.# DSFP-DN3535
A062713
Supertex inc.
4
DN3535
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Symbol
A
1.40
–
b
0.44
–
b1
0.36
–
C
0.35
–
D
D1
1.62
–
E
2.29
–
E1
2.00
†
–
e
e1
H
3.94
–
L
0.73
†
–
MIN
NOM
MAX
4.40
–
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale
.
Supertex Doc. #:
DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
e
l: 408-222-8888
Doc.# DSFP-DN3535
A062713
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