Microchip-Tech-DN3535N8-G

Part #Microchip-Tech-DN3535N8-G
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Microchip-Tech-DN3535N8-G
Supertex inc.  
DN3535  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Features  
General Description  
►
High input impedance  
►
Low input capacitance  
►
Fast switching speeds  
►
Low on-resistance  
This low threshold depletion-mode (normally-on) transistor  
utilizes an advanced vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally-induced  
secondary breakdown.  
►
Free from secondary breakdown  
►
Low input and output leakage  
Applications  
►
Normally-on switches  
►
Solid state relays  
►
Converters  
Supertex’s vertical DMOS FE
T
s
a
re ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
►
Linear amplifiers  
►
Constant current sources  
►
Power supply circuits  
►
T
e
lecom  
Product Summary  
Ordering Information  
R

DS(ON)  

(max)  
10
Ω  
I

DSS  

(min)  
Part Number  
Package Option  
Packing  
BV

DSX

/BV

DGX  

TO-243AA (SOT-89)  
DN3535N8-G  
2000/Reel  
350V  
200mA  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
DRAIN  
Value  
BV

DSX  

BV

DGX  

±20V  
Drain-to-source voltage  
Drain-to-gate voltage  
SOURCE  
DRAIN  
GATE  
Gate-to-source voltage  
Operating and storage  
temperature  
TO-243AA (SOT-89)  
-55

O

C to +150

O

C  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Product Marking  
W = Code for week sealed  
= “Green” Packaging  
DN5SW  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-243AA (SOT-89)  
Package  
θ

ja  

133

O

C/W

‡  

TO-243AA (SOT-89)  
Notes:  
‡
Mounted on FR4 board, 25mm x 25mm x 1.57mm.  
Doc.# DSFP-DN3535  
A062713  
Supertex inc.  

DN3535  
Thermal Characteristics  
I

D  

I

D  

Power Dissipation  
†
Package  
I

DR  

I

DRM  

(continuous)

†  

(pulsed)  
@T

A

= 25

O

C  
TO-243AA  
230mA  
500mA  
1.6W

‡  

230mA  
500mA  
Notes:  
†
‡
I

D

(continuous) is limited by max rated T

j

.  
Mounted on FR4 board, 25mm x 25mm x 1.57mm.  
Electrical Characteristic
s
(T

A

= 25

O

C unless otherwise specified)  
Sym  
Parameter  
Min  
Typ  
Max  
–
Units Conditions  
BV

DSS  

Drain-to-source breakdown voltage  
350  
–
–
–
–
–
V
V
V

GS

= -5.0
V
,
I

D

= 1.0µA  
V

DS

= 15V, I

D

= 10µA  
V

GS(OFF)

Gate-to-source off voltage  
-1.5  
-3.5  
-4.5  
100  
1.0  
ΔV

GS(OFF)

Change in V

GS(OFF)

with temperature  
–
–
–
mV/

O

C V

DS

= 15V, I

D

= 10µA  
I

GSS  

Gate body leakage current  
nA  
µA  
V

GS

= ±20
V
,
V

DS

= 0V  
V

DS

= Max rating, V

GS

= -5.0V  
I

D(OFF)  

Drain-to-source leakage current  
Saturated drain-to-source current  
V

DS

= 0.8 Max Rating,  
V

GS

= -5.0
V
, T

A

= 125

O

C  
–
200  
–
–
–
–
1.0  
–
mA  
mA  
Ω
I

DSS  

V

GS

= 0
V
,
V

DS

= 15V  
Static drain-to-source on-state  
resistance  
R

DS(ON)  

10  
V

GS

= 0
V
,
I

D

= 150mA  
ΔR

DS(ON)

Change in R

DS(ON)

with temperature  
–
–
1.1  
–
%/

O

C V

GS

= 0
V
,
I

D

= 150mA  
mmho V

DS

= 10V, I

D

= 100mA  
G

FS  

C

ISS  

C

OSS  

C

RSS  

t

d(ON)  

t

r  

Forward transconductance  
Input capacitance  
200  
–
–
–
–
–
–
–
–
–
–
–
360  
40  
10  
15  
20  
20  
30  
1.8  
–
V

GS

= -5.0
V
,
V

DS

= 25V,  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
–
pF  
f = 1.0MHz  
–
–
V

DD

= 25V,  
Rise time  
–
I

D

= 150mA,  
R

GEN

= 25Ω,  
V

GS

= 0V to -10V  
ns  
t

d(OFF)  

t

f  

Turn-off delay time  
–
Fall time  
–
–
V

SD  

Diode forward voltage drop  
Reverse recovery time  
V
V

GS

= -5.0
V
,
I

SD

= 150mA  
V

GS

= -5.0
V
,
I

SD

= 150mA  
t

rr  

800  
ns  
Notes:  
1. All
 
D.C. parameters 100% tested at 25

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All
 
A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
0V  
VDD  
90%  
INPUT  
Pulse  
R

L  

10%  
Generator  
-10V  
OUTPUT  
t

(ON)  

t

d(ON)  

t

(OFF)  

t

d(OFF)  

R

GEN  

t

f  

t

r  

VDD  
INPUT  
D.U.
T
.  
10%  
10%  
OUTPUT  
90%  
90%  
0V  
Doc.# DSFP-DN3535  
A062713  
Supertex inc.  
2

DN3535  
Typical Performance Curves  
Saturation Characteristics  
Output Characteristics  
1.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
V

GS

= +2.0V  
0V  
V

GS

= +2V  
0V  
-0.5V  
-0.5V  
0.8  
0.6  
0.4  
0.2  
0
-0.8V  
-1.0V  
-0.8V  
-1V  
-1.5V  
-2V  
-1.5V  
-2V  
10  
0
2
4
6
8
0
50  
100  
150  
200  
250  
300  
350  
V

DS

(volts)  
V

DS

(volts)  
Power Dissipation vs. Ambient
T
e
mperature  
T
r
ansconductance vs. Drain Current  
V

DS

= 10V  
2.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TO-243AA  
T

A

= -55

O

C  
1.5  
1.0  
0.5  
0
T

A

= 25

O

C  
T

A

= 125

O

C  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
T

A

(

O

C)  
I

D

(amperes)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
0
T

A

= 25

O

C  
TO-243AA (pulsed)  
1.0  
0.1  
TO-243AA (DC)  
TO-243AA  
P

D

= 1.6W  
T

C

= 25

O

C  
0.01  
0.001  
1
10  
100  
1000  
0.001  
0.01  
0.1  
1.0  
10  
V

DS

(volts)  
t

P

(seconds)  
Doc.# DSFP-DN3535  
A062713  
Supertex inc.  
3

DN3535  
Typical Performance Curves
(cont.)  
DX

FUX”

Xctkcvkqp”ykvj”Vgorgtcvwtg  
Qp”Tgukuvcpeg”xu0″Ftckp”Ewttgpv  
1.2  
25  
20  
15  
10  
5
V

GS

= 0V  
I

D

= 1mA  
V

GS

= -5V  
1.1  
1.0  
0.9  
0.8  
0
0.0  
-50  
0
50  
100  
150  
0.2  
0.4  
0.6  
0.8  
1.0  
T

j

(

O

C)  
I

D

(amperes)  
X

IU*QHH+”

cpf”T

FU*QP+”

y1Vgorgtcvwtg  
V
t
cpuhgt”Ejctcevgtkuvkeu  
V

DS

= 10V  
1300  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.4  
2.0  
1.6  
1.2  
0.8  
T

A

= -55

O

C  
900  
700  
500  
300  
100  
25

O

C  
V

GS(OFF)

@ 10µA  
125

O

C  
R

DS(ON)

@ 0V, 150mA  
0.4  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
-3  
-2  
-1  
0
1
2
T

j

(

O

C)  
V

GS

(volts)  
Ecrcekvcpeg”xu0″Ftckp”Uqwteg”Xqnvcig  
Icvg”Ftkxg”F{pcoke”Ejctcevgtkuvkeu  
350  
300  
250  
200  
150  
100  
3
2
I

D

= 150mA  
V

GS

= -5V  
1
V

DS

= 40V  
0
-1  
-2  
-3  
-4  
-5  
C

ISS  

50  
0
C

OSS  

C

RSS  

0
10  
20  
30  
40  
0
500  
1000  
1500  
2000  
V

DS

(volts)  
Q

G

(picocoulombs)  
Doc.# DSFP-DN3535  
A062713  
Supertex inc.  
4

DN3535  
3-Lead TO-243AA (SOT-89) Package Outline (N8)  
D
D1  
C
H
E
E1  
1
2
3
L
b
b1  
A
e
e1  
Top View  
Side View  
Symbol  
A
1.40  
–
b
0.44  
–
b1  
0.36  
–
C
0.35  
–
D
D1  
1.62  
–
E
2.29  
–
E1  
2.00

†  

–
e
e1  
H
3.94  
–
L
0.73

†  

–
MIN  
NOM  
MAX  
4.40  
–
Dimensions  
(mm)  
1.50  
BSC  
3.00  
BSC  
1.60  
0.56  
0.48  
0.44  
4.60  
1.83  
2.60  
2.29  
4.25  
1.20  
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.  
†
This dimension differs from the JEDEC drawing  
Drawings not to scale
.  
Supertex Doc. #:
DSPD-3TO243AAN8, Version F111010.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)  
©2013
Supertex inc
.
All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
T
e
l: 408-222-8888  
Doc.# DSFP-DN3535  
A062713  
5