Microchip-Tech-JAN2N3485A

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Microchip-Tech-JAN2N3485A
TECHNICAL DATA  
PNP S
I
LICON
S
M
A
LL
S
I
G
N
A
L TRAN
S
I
S
T
OR  
Qualified per MI
L
–
P
RF
–
1
9500/ 392  
D
e
v
i
c
es  
Qualified
L
e
v
e
l  
JAN  
2N3485A  
2N3486A  
JANTX  
JANTXV  
MAXIMUM RATINGS  
2N3485A  
Ratings  
Symbol  
2N3486A  
Unit  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
V

CEO  

V

CBO  

V

EBO  

I

C  

60  
Vdc  
5.0  
600  
Vdc  
Collector Current — Continuous  
Total Power Dissipation  
mAdc  
@ T

A

= +25

0

C

(1)  

@ T

C

= +25

0

C

(2)  

0.4  
2.0  
W
W

0

C  
P

T  

Operating & Storage Junction Temperature Range  
-55 to +200  
T

J

,

T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance
 
Junction-to-Ambient  
TO-46*  
(TO-206AB)  
Symbol  
Max.  
0.439  
Unit  

0

mC/W  
R
q
JA  
Junction-to-Case  
87  

0

C/W  
R
q
JC  
1) Derate linearly 2.28 mW/

0

C above T

A

= +25

0

C  
2) Derate linearly 11.43 mW/

0

C above T

C

= +25

0

C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
I

C

= 10 mAdc  
60  
Vdc  
V

(BR)  

CEO  
Collector-Base Cutoff Current  
V

CB

= 50 Vdc  
V

CB

= 60 Vdc  
10  
10  
h
Adc  
m
Adc  
I

CBO  

Emitter-Base Cutoff Current  
V

EB

= 3.5 Vdc  
V

EB

= 5.0 Vdc  
50  
10  
h
Adc  
m
Adc  
I

EBO  

6 Lake Street, Lawrence, MA
 
01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N3485A, 2N3486A JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS

(3)  

Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
40  
75  
40  
100  
40  
100  
40  
100  
40  
50  
I

C

= 0.1 mAdc, V

CE

= 10 Vdc  
2N3485A  
2N3486A  
2N3485A  
2N3486A  
2N3485A  
2N3486A  
2N3485A  
2N3486A  
2N3485A  
2N3486A  
I

C

= 1.0 mAdc, V

CE

= 10 Vdc  
I

C

= 10 mAdc, V

CE

= 10 Vdc  
I

C

= 150 mAdc, V

CE

= 10 Vdc  
I

C

= 500 mAdc, V

CE

= 10 Vdc  
h

FE  

120  
300  
Collector-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
I

C

= 500 mAdc, I

B

= 50 mAdc  
Base-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
I

C

= 500 mAdc, I

B

= 50 mAdc  
0.4  
1.6  
Vdc  
Vdc  
V

CE(sat)  

1.3  
2.6  
V

BE(sat)  

DYNAMIC CHARACTERISTICS  
Small-Signal Forward Current Transfer Ratio  
I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz  

h

fe  
40  
100  
2N3485A  
2N3486A  
Magnitude of Small-Signal Forward Current Transfer Ratio  
I

C

= 50 mAdc, V

CE

= 20 Vdc, f = 100 MHz  
Output Capacitance  
V

CB

= 10 Vdc, I

E

= 0, 100 kHz
£
f
£
1.0 MHz  
Input Capacitance  
½

h

fe
½  
C

obo  

2.0  
10  
8.0  
30  
pF  
pF  
C

ibo  

V

EB

= 2.0 Vdc, I

C

= 0, 100 kHz
£
f
£
1.0 MHz  
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.  
6 Lake Street, Lawrence, MA
 
01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2