Microchip-Tech-JAN2N930

TECHNICAL DATA  

NPN

L

OW

P

O

W

E

R

S

I

LICON TRAN

S

I

S

T

OR  

Qualified per MI

L

–

P

RF

–

1

9500/ 253  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

JAN  

2N930  

JANTX  

JANTXV  

MAXIMUM RATINGS  

Ratings  

Collector-Emitter Voltage  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Value  

45  

Units  

Vdc  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

60  

Vdc  

6.0  

Vdc  

30  

mAdc  

Total Power Dissipation  

@ T

A

= +25

0

C

(1)  

@ T

C

= +25

0

C

(2)  

300  

600  

mW  

P

T  

Operating & Storage Junction Temperature Range  

-55 to +200  

T

J

,

T  

stg  

TO- 18*  

(TO-206AA)  

THERMAL CHARACTERISTICS  

Characteristics  

Symbol  

Max.  

Unit  

Thermal Resistance, Junction-to-Case  

97  

R

q

JC  

1) Derate linearly 2.0 mW/

0

C above T

A

= +25

0

C  

2) Derate linearly 4.0 mW/

0

C above T

C

= +25

0

C  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS (T

C

= +25

0

C unless otherwise noted)  

Characteristics  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

I

C

= 10 mAdc  

Collector-Base Cutoff Current  

V

CB

= 60 Vdc  

Symbol  

V

(BR)CEO  

I

CBO  

Min.  

Max.  

Unit  

Vdc  

45  

m

Adc  

h

Adc  

10  

10  

V

CB

= 45 Vdc  

Emitter-Base Cutoff Current  

V

EB

= 6.0 Vdc  

V

EB

= 5.0 Vdc  

m

Adc  

h

Adc  

I

EBO  

10  

5.0  

Collector-Emitter Cutoff Current  

V

CE

= 45 Vdc  

Collector-Base Cutoff Current  

V

CE

= 5.0 Vdc  

I

CES  

I

CEO  

h

Adc  

h

Adc  

2.0  

2.0  

6 Lake Street, Lawrence, MA

 

01841  

120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

Page 1 of 2  

2N930, JAN SERIES  

ELECTRICAL CHARACTERISTICS (con’t)  

Characteristics  

Symbol  

Min.  

Max.  

Unit  

ON CHARACTERISTICS

(3)  

Forward-Current Transfer Ratio  

I

C

= 10

m

Adc, V

CE

= 5.0 Vdc  

100  

150  

300  

600  

h

FE  

I

C

= 500

m

Adc, V

CE

= 5.0 Vdc  

I

C

= 10 mAdc, V

CE

= 5.0 Vdc  

Collector-Emitter Saturation Voltage  

I

C

= 10 mAdc, I

B

= 0.5 mAdc  

Base-Emitter Saturation Voltage  

I

C

= 10 mAdc, I

B

= 0.5 mAdc  

Vdc  

Vdc  

V

CE(sat)  

V

BE(sat)  

1.0  

1.0  

0.6  

DYNAMIC CHARACTERISTICS  

Magnitude of Small-Signal Short-Circuit  

Forward Current Transfer Ratio  

½

h

fe

½  

I

C

= 500

m

Adc, V

CE

= 5.0 Vdc, f = 30 MHz  

1.5  

150  

25  

6.0  

600  

32  

Small-Signal Short-Circuit Forward Current Transfer Ratio  

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz  

Small-Signal Short-Circuit Input Impedance  

V

CB

= 5.0 Vdc, I

E

= 1.0 mAdc, f = 1.0 kHz  

Small-Signal Short-Circuit Output Admittance  

V

CB

= 5.0 Vdc, I

E

= 1.0 mAdc, f = 1.0 kHz  

Output Capacitance  

h

fe  

h

ib  

W

mW  

pF  

h

ob  

1.0  

8.0  

C

obo  

V

CB

= 5.0 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

Noise Figure  

V

CE

= 5 Vdc; I

C

= 10

m

Adc; R

g

=10k

W  

Test 1: f = 100 Hz  

Test 2: f = 1.0 kHz  

NF  

dB  

5

3

3

Test 3: f = 10 kHz  

(3) Pulse Test:

 

Pulse Width = 300

m

s, Duty Cycle

£

2.0%.  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

Page 2 of 2